JP2014216646A - 抵抗変化型メモリ装置の製造方法 - Google Patents
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- 238000000151 deposition Methods 0.000 claims abstract description 55
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- 150000004767 nitrides Chemical class 0.000 claims description 12
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- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
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- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
- H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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Abstract
【解決手段】本方法は、第1の電極を形成するステップと、熱原子層堆積(ALD)による金属酸化物を含む抵抗切り替え酸化物層を形成するステップと、熱原子層堆積(ALD)により第2の電極を形成するステップと、を備え、抵抗切り替え酸化物層は、第1の電極と第2の電極との間に挿入される。抵抗切り替え酸化物層を形成するステップは、金属酸化物を堆積した後に抵抗切り替え酸化物層の表面を表面改質プラズマ処理に露出せずに行われる。
【選択図】図1
Description
Claims (23)
- 抵抗変化型メモリ(RRAM(登録商標))装置を形成する方法であって、
第1の電極を形成するステップと、
約325℃以下で熱原子層堆積(ALD)により金属酸化物を含む抵抗切り替え酸化物層を形成するステップと、
熱原子層堆積(ALD)により第2の電極を形成するステップと、を備え、
前記抵抗切り替え酸化物層は、前記第1の電極と前記第2の電極との間に挿入される、方法。 - 前記抵抗切り替え酸化物層を形成するステップは、前記金属酸化物を堆積した後に前記抵抗切り替え酸化物層の表面を表面改質プラズマ処理に露出せずに行われる請求項1に記載の方法。
- 前記抵抗切り替え酸化物層を形成するステップは、ハフニウム酸化物を堆積するステップを備える請求項2に記載の方法。
- 前記ハフニウム酸化物は、化学式HfOxを有し、ここでxは、約1.5から2の間である請求項3に記載の方法。
- 前記抵抗切り替え酸化物層を形成するステップ及び前記第2の電極を形成するステップは、約200℃から約300℃の間の範囲にある温度で行われる請求項4に記載の方法。
- 前記抵抗切り替え酸化物層を形成するステップは、約200℃から約250℃の間の範囲にある温度でHfOxを堆積するステップを備える請求項4に記載の方法。
- 前記抵抗切り替え酸化物層を形成するステップは、HfCl4及びH2Oを含む前駆体を用いてHfOxを堆積するステップを備える請求項4に記載の方法。
- 前記第1の電極を形成するステップ及び前記第2の電極を形成するステップは、金属窒化物を堆積するステップを含む請求項6に記載の方法。
- 前記第1の電極及び前記第2の電極は、前記抵抗切り替え酸化物層に接触する請求項8に記載の方法。
- 前記金属窒化物を堆積するステップは、TiN層を堆積するステップを備える請求項8に記載の方法。
- 前記第2の電極を形成するステップは、TiCl4及びNH3を含む前駆体を用いてTiNを堆積するステップを備える請求項10に記載の方法。
- 前記第2の電極を形成するステップは、約400℃以下の温度でTiN層を堆積するステップを備える請求項11に記載の方法。
- 前記第2の電極を形成するステップは、約300℃から約350℃の間の温度でTiN層を堆積するステップを備える請求項12に記載の方法。
- 前記第1の電極を形成するステップは、TiCl4及びNH3を含む前駆体を用いてTiN層を堆積するステップを備える請求項12に記載の方法。
- 前記RRAM(登録商標)装置は、異なる垂直レベルで形成される複数の第1の電極を備える三次元RRAM(登録商標)装置であり、前記第2の電極は、垂直に延びる導電性ロッドを備える請求項1に記載の方法。
- 前記第1の電極を形成するステップは、基板表面に亘って第1の電極層を堆積するステップを含み、前記第1の電極層は、前記基板表面と略平行な主表面を有し、
前記抵抗切り替え酸化物層を形成するステップは、前記第1の電極層を通じて形成される穴の側壁面にライニングされ、前記穴は、垂直方向に延びており、
前記第2の電極を形成するステップは、前記抵抗切り替え酸化物層に第2の電極層を堆積するステップを含む請求項15に記載の方法。 - 前記第1の電極層を堆積するステップは、導電性金属窒化物を堆積するステップを備える請求項16に記載の方法。
- 前記第1の電極層を堆積するステップは、犠牲層を堆積するステップを備え、前記第1の電極を形成するステップは、前記犠牲層を導電性金属窒化物と置換するステップをさらに含む請求項16に記載の方法。
- 前記第1の電極を形成するステップは、基板表面に亘って犠牲層を堆積するステップを含み、前記犠牲層は、前記基板表面と略平行な主表面を有し、
前記第2の電極を形成するステップは、前記犠牲層を通じて形成される穴の側壁面に第2の電極層を堆積するステップを含み、
前記抵抗切り替え酸化物層を形成するステップは、前記犠牲層を除去することにより形成されるキャビティをライニングするステップを備え、
前記第1の電極を形成するステップは、前記抵抗切り替え酸化物層に第1の電極層を堆積するステップをさらに備える請求項15に記載の方法。 - 前記RRAM(登録商標)装置を形成する前にトランジスタを形成するステップをさらに備え、前記RRAM(登録商標)装置は、前記トランジスタに亘って形成される請求項15に記載の方法。
- 前記穴は、約20nmから約100nmの範囲の直径及び約0.5μmから約5μmの範囲の深さを有する請求項16に記載の方法。
- 抵抗変化型メモリ(RRAM(登録商標))装置を形成する方法であって、
金属窒化物を含む第1の電極を形成するステップと、
325℃以下で熱原子層堆積(ALD)により金属酸化物を含む抵抗切り替え酸化物層を形成するステップと、
原子層堆積(ALD)により金属窒化物を含む第2の電極を形成するステップと、を備え、
前記抵抗切り替え酸化物層は、前記第1の電極と接触する第1の表面及び前記第2の電極と接触する第2の表面を有し、前記第1の表面と前記第2の表面とは、互いに対向している、方法。 - 前記抵抗切り替え酸化物層を形成するステップは、前記金属酸化物を堆積した後に前記抵抗切り替え酸化物層の表面を表面改質プラズマ処理に露出せずに行われる請求項22に記載の方法。
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KR20140128876A (ko) | 2014-11-06 |
US8956939B2 (en) | 2015-02-17 |
TWI628818B (zh) | 2018-07-01 |
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