JP2013528928A - 低誘電率絶縁体を統合するための方法 - Google Patents
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Abstract
Description
(1) 誘電体膜32又は軟硬化誘電体膜32Aのパターン化の際に使用されたフォトレジスト又はフォトレジスト残渣などの1又はそれ以上のマスク層を取り除くこと;
(2) 誘電体膜32又は軟硬化誘電体膜32Aの1つ又はそれ以上の暴露表面をクリーニングして、前記の湿気、エッチング残渣、ハロゲン含有残渣、フッ化炭素含有残渣、炭化水素含有残渣などを含む望ましくない残渣又は表面吸着物を除去すること;
(3) 誘電体膜32又は軟硬化誘電体膜32Aの1又はそれ以上の暴露表面を脱水すること;
(4) 誘電体膜32又は軟硬化誘電体膜32Aの誘電率kを、意図しないアモルファス炭素含有残渣を除去して低減させること;又は
(5) 誘電体膜32又は軟硬化誘電体膜32Aをさらに劣化及び/又は損傷することなく1又はそれ以上の取り除き及び/又はクリーニング処理を実施すること、又は(6)これらの2以上の任意の組合せ、が含まれる。
Claims (60)
- 基板上に誘電体膜を統合する方法であり、前記方法は:
基板上に誘電体膜を調製し、前記誘電体膜が約4以下の誘電率を持つlow−k誘電体膜であり;
前記誘電体膜上に予備硬化処理を実施し;
前記誘電体膜にリソグラフィー処理及びエッチング処理を用いてパターンを形成し;
前記基板から望ましくない残渣を除去し;及び
前記誘電体膜上に最終硬化処理を実施し、前記最終硬化処理が前記基板を紫外線(UV)放射で照射すること、を含む方法。 - 請求項1に記載の方法であり、前記予備硬化処理が、第1の基板温度で実施され、及び前記最終硬化処理が、前記第1の基板温度よりも高い第2の基板温度で実施される、方法。
- 請求項1に記載の方法であり、前記予備硬化処理の実施が次の、
前記基板をUV放射で照射する;
前記基板を赤外線(IR)放射で照射する;
前記基板を、前記基板に接触する基板ホルダーの温度を上げることで加熱する;及び
これらの2又はそれ以上の任意の組合せを実施する;
ことの1又はそれ以上を任意の順で実施することを含む方法。 - 請求項3に記載の方法であり、前記UV放射が、約200nmと約350nmとの間の範囲での放射を含む、方法。
- 請求項3に記載の方法であり、前記IR放射が、約8ミクロンと約12ミクロンとの間の範囲での放射を含む、方法。
- 請求項1に記載の方法であり、前記最終硬化処理の実施が次の、
前記基板をUV放射で照射すること;
前記基板をIR放射で照射すること;
前記基板を、前記基板に接触する基板ホルダーの温度を上げることで加熱する;及び
これらの2又はそれ以上の任意の組合せを実施すること;
の1又はそれ以上を任意の順で実施することを含む方法。 - 請求項6に記載の方法であり、前記UV放射が、約200nmと約350nmとの間の範囲のUV放射を含む、方法。
- 請求項6に記載の方法であり、前記IR放射が、約8ミクロンと約12ミクロンとの間の範囲のIR放射を含む、方法。
- 請求項6に記載の方法であり、さらに:
前記最終硬化処理の間に約300℃と約450℃との間の基板温度を維持する、方法。 - 請求項1に記載の方法であり、前記望ましくない残渣を除去することが、アッシング処理又は湿式クリーニング処理又はそれらの両方を実施することを含む、方法。
- 請求項1に記載の方法であり、前記望ましくない残渣を除去することが、前記誘電体膜に前記パターンを含む前記基板をIR放射及び場合によりUV放射で照射することを含む、方法。
- 請求項11に記載の方法であり、前記望ましくない残渣の除去がさらに、前記基板に向かう方向のジェット軸に沿ってノズルからガス又は蒸気ジェット放出へ前記基板を暴露することを含む、方法。
- 請求項12に記載の方法であり、前記IR放射が、前記ジェット軸と交差する前記基板上にビームスポットを生じるIR放射のビームを含む、方法。
- 請求項1に記載の方法であり、前記望ましくない残渣の除去がさらに、基板温度を、約20℃と約250℃との間の温度に維持することを含む、方法。
- 請求項1に記載の方法であり、前記望ましくない残渣が、表面吸着物、粒子状物、湿気、エッチング残渣、望ましくない炭素含有残渣、アモルファス炭素含有残渣、炭化水素含有残渣、フッ化炭素含有残渣、ハロゲン含有残渣又はポリマー含有残渣、又はこれらの2又はそれ以上の任意の組合せを含む、方法。
- 請求項1に記載の方法であり、さらに:
前記望ましくない残渣の除去に続いて、かつ前記最終硬化処理の前にシリル化処理を実施する、方法。 - 請求項16に記載の方法であり、前記シリル化処理がさらに、前記基板をUV放射で照射することを含む、方法。
- 請求項16に記載の方法であり、前記シリル化は、シラン化合物、シラザン化合物、HMDS又はTMCS、又はこれらの2又はそれ以上の任意の組合せを含む、方法。
- 請求項16に記載の方法であり、前記シリル化処理が、約200℃と約400℃との間に基板温度を維持することを含む、方法。
- 請求項1に記載の方法であり、さらに:
前記望ましくない残渣の除去に続いて、かつ前記最終硬化処理の実施の前に、前記基板を脱水することを含む、方法。 - 基板をクリーニングする方法であり、前記方法は:
1又はそれ以上の層又は構造を含む基板の領域を赤外線(IR)放射及び場合により紫外線(UV)放射で照射して、前記1又はそれ以上の層又は構造から望ましくない材料又は残渣を除去することを含む、方法。 - 請求項21に記載の方法であり、さらに:
前記領域の少なくとも1部分を、前記基板に向く方向のジェット軸に沿ってガスノズルから放出されるガス又は蒸気ジェットに暴露することを含む、方法。 - 請求項22に記載の方法であり、前記ガス又は蒸気ジェットが、前記領域の少なくとも一部と反応性であるように選択される、方法。
- 請求項22に記載の方法であり、前記ガス又は蒸気ジェットが、He、Ne、Ar、Kr、Xe、N2、H2、NH3、CO、CO2又はO2、又はこれらの2又はそれ以上の任意の組合せを含む、方法。
- 請求項22に記載の方法であり、前記IR放射が、前記基板上にビームスポットを持つIRビームを含み、前記IRビームが前記ビームスポットで前記ジェット軸と交差する、方法。
- 請求項22に記載の方法であり、前記暴露が、前記照射の後か又は同時かである、方法。
- 請求項21に記載の方法であり、前記1又はそれ以上の層又は構造が、パターン化マスク層及びエッチング処理を用いて形成されるパターン化構造を含む、方法。
- 請求項21に記載の方法であり、前記1又はそれ以上の層又は構造が、low−k層、超low−k層、フォトレジスト層、反射防止コーティング(ARC)層、有機平坦化層(OPL)、ソフトマスク層又はハードマスク層、又はこれらの2又はそれ以上の任意の組合せを含む、方法。
- 請求項21に記載の方法であり、前記照射が、前記場合によるUV放射と同時に、前記場合によるUV放射の前に又は前記場合によるUV放射の後に、又はこれらの2又はそれ以上の任意の組合せでIR照射することを含む、方法。
- 請求項21に記載の方法であり、前記IR放射が実質的に、ナローバンド波長を持つ単色電磁(EM)放射を含む、方法。
- 請求項21に記載の方法であり、前記IR放射がIRレーザーを含む、方法。
- 請求項21に記載の方法であり、さらに:
前記IR放射のためのスペクトル内容を選択することを含み、前記スペクトル内容が、
前記1又はそれ以上の層又は構造の残渣の少なくとも1部分又は前記材料又は望ましくない残渣の少なくとも1部分が吸収して除去されるように選択される、方法。 - 請求項21に記載の方法であり、前記IR放射が、約8ミクロンから約12ミクロンの間の範囲のIR放射を含む、方法。
- 請求項21に記載の方法であり、さらに:
基板を、約20℃と約250℃との間の温度に維持することを含む、方法。 - 請求項21に記載の方法であり、前記場合によるUV放射が、約200nmと約350nmとの間の範囲のUV放射を含む、方法。
- 基板を処理するための処理モジュールであり、前記処理モジュールが:
処理チャンバ;
前記処理チャンバと組み合わされ、かつ基板を支持するように構成される基板ホルダー;
前記処理チャンバと組み合わされ、かつ前記基板を電磁(EM)放射に暴露するように構成される放射源を含み、前記放射源が、前記基板上にビームスポットを持つIRビームを生成するように構成される赤外線(IR)源を含み;及び
前記処理チャンバと組み合わされるガスノズルを含み、かつ前記基板に向かう方向のジェット軸に沿って前記ガスノズルから放出されるガス又は蒸気ジェットを生成し、かつ前記ビームスポットと交差するように構成されるガス注入システムを含む、処理モジュール。 - 請求項36に記載の処理モジュールであり、前記放射源がさらに紫外線(UV)放射源を含む、処理モジュール。
- 請求項36に記載の処理モジュールであり、前記放射源がIRレーザーを含む、処理モジュール。
- 請求項26に記載の処理モジュールであり、さらに:
前記処理チャンバと組み合わされ、かつIRビームを前記基板を横切るように構成される放射スキャン装置を含む、処理モジュール。 - 請求項36に記載の処理モジュールであり、さらに:
前記基板ホルダーと組み合わされ、かつ前記基板の温度を制御するように構成される温度制御システムを含む、処理モジュール。 - 基板上の誘電体膜を処理するための処理モジュールであり、前記処理モジュールが:
処理チャンバ;
前記処理チャンバと組み合わされ、基板を支持するように構成される基板ホルダー;及び
前記処理チャンバと組み合わされ、前記誘電体膜を電磁(EM)放射に暴露するように構成される放射源を含み、
前記放射源が紫外線(UV)源を含み、前記UV源が:
UVランプ及び
前記基板へ前記ランプからの反射されたUV放射を方向付ける反射装置を含み、前記反射装置がダイクロイック反射装置及び前記UVランプと前記基板との間に設けられる非吸収反射装置を含み、かつ前記UVランプから前記ダイクロイック反射装置へUV放射を反射するように構成され、ここで前記非吸収反射装置が前記UVランプから前記基板への直接UV放射を実質的に抑制する、処理モジュール。 - 請求項41に記載の処理モジュールであり、前記基板が、約200nm(ナノメートル)から約290nmの範囲の放射波長を含む前記反射されたUV放射へ暴露される、処理モジュール。
- 請求項41に記載の処理モジュールであり、前記非吸収反射装置が前記UVランプから分離されている、処理モジュール。
- 請求項41に記載の処理モジュールであり、前記非吸収反射装置が、前記UVランプの下側に適用されるコーティングを含む、処理モジュール。
- 請求項41に記載の処理モジュールであり、前記非吸収反射装置が、前記ダイクロイック反射装置の少なくとも1つの凹形状反射表面に面するように方向付けられている凹形状反射表面を持つ、処理モジュール。
- 請求項45に記載の処理モジュールであり、前記非吸収反射装置が、前記ダイクロイック反射装置と前記基板との間に設けられる、処理モジュール。
- 請求項45に記載の処理モジュールであり、前記非吸収反射装置の前記凹形状反射表面の第1の頂点と焦点、及び前記ダイクロイック反射装置の前記凹形状反射表面の第2の頂点と焦点とが、同一直線上にある、処理モジュール。
- 請求項41に記載の処理モジュールであり、前記ダイクロイック反射装置が、円形、楕円形、放物線又は双曲線状の断面を持つ円筒又は球形の形状を含む、処理モジュール。
- 請求項41に記載の処理モジュールであり、前記非吸収反射装置が、円形、楕円形、放物線又は双曲線状の断面を持つ円筒又は球形の形状を含む、処理モジュール。
- 請求項41に記載の処理モジュールであり、前記ダイクロイック反射装置が複数のダイクロイック反射要素を含み、これらが前記基板と並行でかつ前記基板の上の第1の平面内に設けられ、及び前記非吸収反射装置が複数の非吸収反射要素を含み、これらが前記基板と並行でかつ前記基板の上及び前記第1の平面の下に設けられる、処理モジュール。
- 請求項50に記載の処理モジュールであり、前記複数の非吸収反射要素及び前記複数のダイクロイック反射要素が対で設けられ、前記非吸収反射要素のそれぞれと、前記ダイクロイック反射要素のそれぞれとの間に1対1の関係がある、処理モジュール。
- 請求項41に記載の処理モジュールであり、前記放射源がさらに、前記反射装置と前記基板との間に設けられるUV窓を含む、処理モジュール。
- 前記41に記載の処理モジュールであり、前記放射源はさらに、前記反射装置と前記基板との間に設けられるUV窓を含む、処理モジュール。
- 請求項41に記載の処理モジュールであり、前記放射源がさらに、赤外線(IR)源を含む、処理モジュール。
- 請求項54に記載の処理モジュールであり、前記IR源が、実質的にナローバンド波長を持つ単色電磁(EM)放射を与える、処理モジュール。
- 請求項54に記載の処理モジュールであり、前記IR源がIRレーザーを含む、処理モジュール。
- 請求項41に記載の処理モジュールであり、さらに:
前記基板ホルダーと組み合わされ、かつ前記基板の温度を制御するように構成される温度制御システムを含む、処理モジュール。 - 請求項41に記載の処理モジュールであり、さらに:
前記基板ホルダーに組み合わされ、かつ前記基板ホルダーを直線移動又は回転、又は直線移動及び回転させるように構成される駆動システムを含む、処理モジュール。 - 請求項41に記載の処理モジュールであり、さらに:
前記処理チャンバと組み合わされ、かつ前記処理チャンバへ処理ガスを導入するように構成されるガス供給システムを含む、処理モジュール。 - 請求項59に記載の処理モジュールであり、前記供給システムがノズルを含み、前記ノズルが、前記基板に向かう方向のジェット軸に沿って前記ノズルから放出されるガス又は蒸気ジェットを生成するように構成される、処理モジュール。
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US20110232677A1 (en) | 2011-09-29 |
US20110233430A1 (en) | 2011-09-29 |
US9017933B2 (en) | 2015-04-28 |
KR20130014554A (ko) | 2013-02-07 |
TW201203362A (en) | 2012-01-16 |
JP2016167633A (ja) | 2016-09-15 |
TWI464805B (zh) | 2014-12-11 |
WO2011123373A1 (en) | 2011-10-06 |
US8242460B2 (en) | 2012-08-14 |
US20110237080A1 (en) | 2011-09-29 |
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