TWI238026B - Structure and fabricating method of a high-dielectric film formed on an organic substrate - Google Patents

Abstract

A method utilizes core-shell powders of metal-ceramic or ceramic-ceramic structure to fabricate a high-dielectric film on an organic substrate. The powders first mix with a solvent to deposit on the substrate and form a dielectric film. Furthermore, densification process such as laser annealing enables a compact structure of the dielectric film. The obtained dielectric film achieves excellent performances, including a wider control range of solid content, high dielectric constant, low TCC (temperature coefficient of capacitance), and low loss tangent.

Description

1238026 V. Description of the invention (!) [Technical field to which the invention belongs] In particular, "Ming is about a method for manufacturing a dielectric film layer on a substrate, rice grain $ θ: seeded under relatively low temperature conditions Dielectric properties: Substrate Πίίίΐ Genus: Pottery 'or Pottery-Taobian core-shell structure particles' method. / 成 /, the structure and manufacturing method of the dielectric film layer with a dielectric constant of the past [previous technology] It is necessary to make high-density integration, small size & of the system, occupying 80% of the development Circuit work / density is increased, and independent passive electronic components are necessary. The miniaturization and multi-functionality of the building blocks have been advancing in the advancement of manufacturing technology.

Degree, has been so small that it is not easy to fall and the mini-electronic electronic components have achieved the miniaturization (Xie) of the components ^ person to \ inch; and /, use the pass W and also the majority of components "and wear $ 胄 之 之result. In the prior art, Array products; ,,, and two operations: The density of array elements that have widely formed different element functions has continued to produce the same manufacturing and advancement, taking into account the shortcomings of reliability and area. The gate sample produces a parasitic effect. In order to reduce the element, the pieces are integrated or integrated on the outer surface of the substrate. It is a general electronic structure commonly connected to the substrate, which can increase the electrical work, and has no need for independent connection points. Kong Gong, reducing costs and easy process

f 6 pages 1238026 V. Description of the invention (2) At present, there are two methods for manufacturing a high-dielectric hybrid film layer, one is a conductor-insulating substrate composite film layer based on the principle of percolation; the other is based on random The theory of dielectric material mixing, mixing insulating substrates (polymers) and inorganic materials with high dielectric constants (Tao Ying). Conductor-insulating substrate composite film is also called conductor-inorganic composite material, according to the research of C.P. Wong (γ · Roa, c.p · Wong, " A Novel

Ultra High Dielectric Constant Epoxy Silver

Composite for Embedded Capacitor Application11, IEEE 8th International Symposium on Advanced Packaging Materials, p. 2 48 (2 0 0 2)), flake silver mixed with epoxy resin, flakes at 11 · 23 vo 1% (volume percentage) With a mixed silver content, a dielectric constant as high as K = 1 0 0 0 and a dielectric loss as low as tan 5 = 1. 9% can be obtained; but when its flake silver content is 丨 丨 28v〇1%, Although the dielectric constant bl 50 0 is further increased, the dielectric loss is as high as tan δ = 15%. Therefore, for the conductor-inorganic composite material produced by the principle of permeation, the range of the conductor content for the stable control of the process is very narrow. The schematic diagram of the relationship between the dielectric constant and the particle composition content is shown in the curve of Figure 1 -Insulator "; it has a high dielectric constant in the part of the conductor with critical penetration; but within a narrow range of conductor content, it will increase the leakage situation due to the electron jumping behavior, resulting in high Dielectric loss and greatly reduced dielectric constant. As for the polymer-ceramic hybrid composite, also known as organic-inorganic composite, the schematic diagram of the relationship between its "electric constant and particle composition content" is shown in Figure 1

Page 7 1238026 V. Description of the invention (3) As shown in line "2 · Polymer-Ceramic"; previous studies include TR · Jow. Human (High Dielectric Constant Material Development 11, IEEE, 1 992) mixed epoxy Resin and lead zirconate titanate (PZT) ceramic particles obtain a high dielectric constant film layer, while C.P.Wong et al. (US patent US 6 5446 5 1) use barium titanate (BaTi03) and #titanium Lead-acid (PZT) ceramic particles mixed with high-dielectric chelating polymer 'However, a high dielectric constant of 15.0 is obtained only when the content of ceramic particles is greater than 85 ν0%' To obtain a higher dielectric constant, it is usually necessary to increase the ceramic Particle content. However, when the solid content of the high-dielectric constant ceramic particles is greater than ν ο 1% (volume and percentage), the film layer will become brittle and increase the difficulty of processing and assembly. Therefore, the solid content of the high-ceramic particles will increase. The difficulty of the process and the dielectric constant did not perform satisfactorily. Therefore, in the prior art described above, the methods that can be used to make a high-dielectric constant buried film layer lack the convenience and robustness of the process; if it is to be made of a flexible substrate, it is more like a tree. Furthermore, even if it is intended to form a film layer based on the ceramic-ceramic and metal core-shell structure particles, although the shape is lacking: i ;; to a relatively high dielectric constant, the existing technology is straightforward: the film layer has its difficulties The temperature of the sintered densified ceramic pot is thousands of degrees. Generally, the substrate is adhered to the surface or soldered. However, it is only 100 to 200 degrees Celsius at 4 degrees Celsius. The technical problem that Sx Ming wants to solve is that Yiyi's process' forms on the substrate with high dielectric constant and

__ Page 8 1238026 Description of the invention (4) Film. Film layer: the technical problem, the present invention provides a high-dielectric powder, and then; ί Ϊ to f ΐ provides a plurality of solvents with a core-shell structure followed by the powder and the dielectric; Film layer. , u The high-dielectric film layer M, ^ ^ f Τ 1 provided in the present invention is a powder having a core-shell structure, and at a relatively low substrate temperature, again—a powder having a core-shell structure, Its core = f surface formation; the organic material h U ^ is a metal or a conductive material, and the shell material is a material with dielectric characteristics I ,,, and so the dielectric film is acoustic ^ 丄;, ', or, the kernel is the degree coefficient. The dielectric layer has a dielectric film formed by the dielectric constant and the low capacitance temperature; it has an ancient external energy "... ^ Younan powder is solidly contained *, and you can use 丨 plus C such as laser) and Densify.

Secondly, the solid content of the powder of the dielectric film layer can be between 敕 A (preferably 64 ~ 84v〇U), and the dryness of J5 at 1MH ° is 3 to 45 ~ 90vo1%. Above, and the powder solid number f0 "is preferably less than 1%. The temperature of the capacitors in the ττ and λ is about ‘plus the laser energy at

Under the condition of the frequency of 5 ~ 15Ηζ, it is possible; the dielectric constant of the single-pulse film layer is 45; the electricity to the upper king is not charged, and the high molecular weight of the spring machine is high ^ The effect achieved by the present invention lies in the use of nuclear Second power: loss is less than 2.5%. The dielectric film layer formed thereon has a constant compared with the powder f, a low capacitance temperature coefficient, and a low dielectric loss: tune ^: range, high dielectric ′ other) 丨 phase loss, and the process can be applied to

1238026 I. " ------- V. Description of the invention (5) Relatively low temperature resistant substrate. [Embodiment] The present invention is made by a solution chemistry method (such as ^ or sol-gel method), and the ruler method, the redox method in which the core material is a metal material (such as titanium, silver (powder) 'conductive inorganic material (Such as semiconducting ceramics, electrical materials) or materials (such as gill titanate, barium titanate 'or dielectric materials with mismatched dielectric properties), 卩 inch may be too + H' titanium dioxide, oxide Examples of inorganic materials with high dielectric constants: 2 m degrees of titanate. The shell material is surrounded. The material size is the composition of nano-scale standard nuclear salt powder. It can be: 1.Each powder is completely covered by the shell material, and any powder is completely covered by the shell material. Part of the powder is completely covered by the shell material, and the other part of the powder is: "Partially coated" core material, plus a mixture of nano-grade shell powder. Lieutenant General described three kinds of powders with core-shell structure, mixed with polymer solvent (morning tree, acrylic resin, etc.), and depositing them by spin coating or printing (organic substrates such as PCB substrate, or silicon substrate +, broken glass substrate), after curing (cur i ng) bonding process, a wide range of solid content of the core-shell structure powder can be obtained to obtain a dielectric film layer with a high dielectric constant. The schematic diagram of the relationship between the dielectric constant and the solid content of the powder is shown in the curve "3 A · core-shell structure" in Figure 1.

III Page 1238026 V. Description of the invention (6) If the aforementioned core-shell structure powder is mixed and dispersed in a solvent, then plated on an organic substrate, and then annealed with laser energy) to densify (densificati). n) The dielectric constant of the dielectric film layer obtained by the dielectric film layer will be as shown in the curve r3B. Core-shell structure of FIG. 1 at a schematic point where the solid content is 100 vol%. From the comparison of the curves in Fig. I, the dielectric film layer developed by the present invention using the core-shell structure powder can obtain high dielectric constant wife text under a wide composition adjustment range, which is indeed-simple and stable. Cheng 0

In the case of a Japanese system, the organic-based method with a high dielectric film layer provided by the present invention includes the steps shown in FIG. 2: First & Step 110); then 'disperse the powder into two solvents (step 120); then, the powder and the solvent are plated on an organic substrate to form a dielectric film layer (step 丨 3 〇); Finally, the dielectric film layer is cured or densified (step 40). Among them, the densification procedure can be performed by laser annealing. The technical content of the present invention will be described in detail through the first preferred embodiment of the present invention. • First, use a hydrothermal synthesis method under the conditions of i 5 0 to 2 0 c, with titanium) metal as the core material, and thorium titanate (SrTi〇3, referred to as st) as the shell material,

> A powder with a nucleated shell structure. The definition of this powder is Ti-ST. In addition, 'Synthesis of nano-sized silver particles (known as n〇Ag) by oxidation-reduction method' is followed by the addition of the coupling agent 3_ (aminopropyl) trimethoxysilicon (3, 3-ami nopropyl) tri met ho xysi lane ) To make its reaction coat on the surface of silver particles, to form a first shell, the reaction product is called Ag-.

1238026

After A P S, Pi ^, add an organic alkoxide with titanium, and a & a p $ at 150. 〇 Perform the sol-gum aging reaction, and combine the recording ions and osmium ions to form the second shell of titanium I gills through the coupling agent. Then, the powder with a core-shell powder structure is obtained by centrifugal drying, and the definition of such powder is A g — § τ. Mixing and stirring the T-ST or Ag-ST core-shell powder with acrylic resin, and using a spin coating method to form a copper electrode (Cu electrode) on an organic substrate (using a printed circuit board PCB as an example). The dielectric film layer is then cured at 150 ° C, as shown in Figures 3A and 3B; the cured dielectric film layer is covered with a mask with an electrode pattern, and a metal electrode is sputtered, such as an Au electrode ) To form a metal-insulating film-metal MIM structure with the copper bottom electrode, as shown in Figures 3C and 3D; therefore, the manufacturing method of the dielectric film layer described herein may further include reduced plating The step of forming another metal electrode on the dielectric film layer to form a metal-insulating film-metal structure. Next, the dielectric characteristics (dielectric constant K, dielectric loss tan 5), the stability of the dielectric characteristics with frequency, and the temperature stability of the valley ((C (t)) will be measured with this M 丨 M structure. -C (25 ° C)) / (C (25 ° C) (T-25 ° C)), where C is capacitance and T is temperature).

Its dielectric loss tan 5 has been maintained at about 4% on average. When the solid content of the Ti-lamp core-shell structure powder exceeds 90 vol%, the content of the organic resin is too small, which makes it difficult to mix the core-shell structure powder. As for the dielectric film formed by the Ti-ST core-shell structure, at room temperature and 1 MHz, as the solid content of the powder of the Ti-ST core-shell structure increases, the dielectric constant increases. When the solid content of the structure powder is 64 ~ 84vol%, the dielectric constant K is stably maintained between 300 ~ 400.

No. 12 1238026 The adhesion of the film layer on the organic substrate is also caused by the excessive residual pores, which causes the dielectric constant to be greatly reduced. Please refer to Figure 5 'For the Ag-ST core-shell structure dielectric film layer, at room temperature and 1 MHz, as the solid content of the Ag-ST core-shell structure powder increases, the dielectric constant increases accordingly' When the solid content of the powder of Ag-ST core-shell structure is between 50 and 70 vol%, the dielectric constant κ is stably maintained at about 3,000, and its dielectric loss tan 6 is less than 7%. When the solid content of Ag-ST core-shell structure powder is between π ~ and 82v〇U, the dielectric constant and dielectric loss increase sharply, and similar penetration occurs.

Mechanism 'and its dielectric properties decay rapidly after being higher than the solid content of the osmotic powder. Please refer to Figure 6, which shows the typical capacitance temperature coefficient TCC (temperature " coefficient of capacitance) in Ti-ST and Ag-ST dielectric stability regions, regardless of ΤΠ-ST The dielectric film layer of the core-shell structure or the dielectric film layer of the Ag-ST core-shell structure has a capacitance temperature coefficient in the range of 1%. '

As shown in Figure 7, the dielectric properties of the frequency can also be obtained below 1 MHz. The dielectric constant κ of the Ti-ST core-shell structure dielectric film is greater than 400, and the dielectric constant is greater than 1 MHz. κ is maintained at about 400. When the frequency is lower than 1 MHz, the dielectric constant κ of the Ag-ST core-shell structure dielectric film layer is larger than 200, and when the frequency is higher than 1 MHz, the dielectric constant κ is maintained at about 200. Therefore, as can be seen from Figs. 4 to 7, the dielectric film layer of the core-shell structure can provide a wide range of powder solid content for adjustment, and can be maintained at a high dielectric constant. When the adjustable range of powder solid content is 45 ~ 9 Ovol%, the dielectric constant K at ιΜΗζ is more than 200; the adjustable range of preferred powder solid content is

Page 13 1238026

V. Description of the invention (9) 84νο1%, Jiu Lei under 1MΗζ Honghong. When the frequency is below 1MHz, the nuclear bite is two or more. In other words, it is lower than it 余 it! 夕 雪 六 、 w 命 / 〇. Furthermore, the coefficient of solid content of any powder with adjustable solid content is maintained at 丨%. The second preferred embodiment of the present invention will be described below. € 37. The Zr and Ti precursors (such as zirconium propoxide, ethidinium:% salt) are effectively coated with barium titanate-based Y5P with a particle size of 100 ~ 200 nm by the 'gluing / spinning method'. BaTl03); 丨 Electric particles' form a core-shell structure powder, as shown in Figure 1A and B of the attachment. This core-breaking structure powder is dispersed in a volatile solvent (such as alcohol). Plated on an organic substrate, such as a pCB substrate. After drying and attaching in a drying furnace with a temperature of less than 250 ° C, the annealing and densification are performed with a laser energy density of 40 ~ ^ 50mJ / cm2 with a cardiac excimer laser and a pulse frequency range of 5 ~ 20Hz. The core-shell structure dielectric film layer; repeating the plating and annealing of 4 layers, the typical film thickness of 2 ~ 3 layers will be less than 2 m, as shown in Figure 1c of the annex. After irradiating with 248nm excimer laser energy, the dielectric layer obtained by annealing the Y5P_Ti core-shell film layer at a laser energy density of 65mJ / cm2 at a laser energy density of 65mJ / cm2, the dielectric constant is about 23 0 at a frequency of 1 MHz. Electricity loss is less than 5%. Please refer to Figures 8 and 9. The dielectric film layer covered by the Zr precursor is densified with a laser energy density of 125mJ / cm2, and the γ5ρ pre-crystallized powder and the Zr precursor are measured at iOz. The dielectric film layer of the core-shell structure powder with a volume ratio (v〇l%) of 1 ·· 2 (Y5P: Zr-ge 1 = 1: 2) can obtain a dielectric constant of about 2 2 0, and the dielectric loss is less than 1.5%. The volume ratio of Y5P pre-crystallized powder to Zr precursor

1238026

V. Description of the invention (10) The film layer can be obtained as powder 3 of the shell structure (Y5P: Zr-gel = 1: 3) The core-shell structure powder has a dielectric constant of about 450 and a dielectric loss of less than 2.5. %. The temperature coefficient of the capacitance obtained by such a core is also about 1%. ^ In summary, the dielectric film layer formed by the present invention has a substrate with a wide number, a low capacitance temperature coefficient, and a low # low withstand temperature. The adjustment range of the solid content of the core-shell structure powder on the organic substrate and the high dielectric constant loss can be applied to the processes described above, only to limit the scope of the present invention, and to modify and replace it. Creator.

It is only the preferred embodiment of the present invention. It is not intended to be used by those skilled in the art. The disclosure of the present invention is based on the technical ideas of the present invention. Therefore, the same changes and modifications can be made without departing from the scope of the technical ideas of the present invention. It should be covered by the scope of patent application of the present invention.

1238026 The diagram briefly illustrates the first diagram. The first diagram is a comparison of the core-shell structure functional film of the present invention with the prior art, showing the dielectric appearance at different particle composition content (volume percentage); The main flowchart of the manufacturing method of the electrical film layer. Figures 3A-3D are manufacturing flowcharts of the present invention for forming a high dielectric film layer MIM structure on an organic substrate. Figure 4 shows the first preferred embodiment of the present invention. In the example, the dielectric properties of the dielectric film layer formed by the T1 ^ solid-core core-set structure at room temperature and ΜΗ: change in the dielectric properties; Figure 5 shows the first preferred embodiment of the present invention. At room temperature, ^ the dielectric characteristics of the dielectric film layer formed by the core-set structure in the Ag ST solid content; Figure 6 shows the change in the capacitance temperature coefficient of the first preferred embodiment of the present invention; θ ^ The figure shows the change in the electrical characteristics of the dielectric film layer in the first preferred embodiment of the present invention versus frequency; ^ == shows the laser annealing pulse member in the second preferred embodiment of the present invention: For 5P dielectric particles coated with different ratios of colloid shells in the precursor, the dielectric was measured at MHz $ The dielectric constant of the layer is changed; and FIG. 9 shows that in the second preferred embodiment of the present invention, the laser annealing vein 1MΗζί is coated with different ratios of the colloid shell layer of the precursor, and the dielectric is measured under the MΗζ measurement. The dielectric loss of the film changes. 7 attachments = Figures A, B, and C show that in the second preferred embodiment of the present invention, the Γ i 萷 body is coated on the barium titanate group (γ 5 ρ) by the sol-gel method.

Page 16 1238026 The diagram briefly illustrates the powder, the powder with a core-shell structure formed. Figure 1A is a Zr coating, Figure 1B is a Ti coating, and Figure 1C is a PCB substrate and its dielectric film layer. . [Illustration of Symbols] Step 1 1 0 Provide a plurality of powders with a core-shell structure. Step 1 2 0 Disperse the powders in a solvent Step 1 3 0 Spread the powders and solvents on an organic substrate to form a dielectric film layer Step 1 40 Cure or densify the dielectric film Floor

Page 17

Claims (1)

1238026 VI. Application Patent Scope 1 · A method for manufacturing an organic substrate with a high dielectric film layer, comprising the steps of: v providing a plurality of powders having a core-shell structure, the core-shell structure transmitting at least one shell material covered with at least one The surface of the core material; dispersing the powders in a solvent in plural; plating the powders and the solvent on an organic substrate to form a dielectric film layer; and curing the dielectric film layer. 2. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the core material is a conductive metal. 3. The method for manufacturing an organic substrate having a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the core material is titanium or silver. 4. The method for manufacturing an organic substrate having a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the core material is a semiconductive ceramic. Soil 5 · The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the core material is a titanate of an alkaline earth metal. 6. The method for manufacturing an organic substrate having a south dielectric film layer as described in item 1 of the scope of the patent application, wherein the core material is selected from the group consisting of hafnium titanate, barium titanate, or calcium titanate. 7. The method for manufacturing an organic substrate with a south dielectric film layer as described in item 1 of the scope of patent application, wherein the shell material is selected from the group consisting of hafnium titanate, barium titanate, or calcium titanate. 8 · The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of patent application, wherein the shell material is handed over from a group of zirconium oxide or titanium oxide 1238026 6. Scope of Patent Application Combination. 9. The manufacturing method with a high dielectric film layer as described in item 丨 of the scope of the patent application, wherein the powder plating step is performed by a spin coating brush technique. P10. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the dielectric film layer is formed on a bottom electrode (Cu electrode) of the organic substrate. A U. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, further comprising sputtering a metal electrode on the dielectric film layer to form a metal-insulating film-metal structure. The steps. 1 2 · The method for manufacturing an organic substrate with a high dielectric film layer as described in item 丨 丨 of the patent application scope, wherein the metal electrode of the splash clock is a gold electrode. 1 3 · The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application 'wherein the organic substrate may be a printed circuit board' or replaced by a Shi Xi substrate or a glass substrate or a reversible substrate . 1 4 · The method for manufacturing an organic substrate having a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the curing step of the dielectric film layer uses laser annealing to densify the dielectric film Floor. 1 5 · The method for manufacturing an organic substrate having a high dielectric film layer as described in item 4 of the scope of the patent application, wherein in the laser annealing process, a preferred laser source is an excimer laser. 1 6 · The method for manufacturing an organic substrate with a high dielectric film layer as described in item 5 of the scope of the patent application 'wherein the laser annealing process, the laser energy density is 4 0 ~ 15 mJ / cm2' The pulse frequency is 5 ~ 15Hz. 1238026 VI. Scope of patent application 1 7. As described in the scope of patent application No. 1 with a high dielectric film layer remaining, & seven & β 丄 _π 哉 substrate coating la method, wherein the powder system is selected from complete coating The core-shell structure, the partially-coated core-shell structure, and the nano-grade powder of the shell material. ° 18. Has a high dielectric film layer as described in item 1 of the scope of patent applications An organic substrate manufacturing method, wherein the powder system is made using a solution chemistry method. Soil 1 9. The manufacturing method of a certain organic plate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the manufacturing method of these powders is selected from hydrothermal method, = reduction method and sol-gel method. Group of ancestors. 2 :: 2: Qingzhan Ganli / Item 1 with a high dielectric film layer < organic substrate manufacturing method, wherein the solid content of these powders is 45 ~ 90V〇U, Xibaden The dielectric constant K of the film is higher than 200. μ; 1 21, as described in the method of the patent application for the organic substrate manufacturing method with a high dielectric film layer, wherein the preferred powder solids content of the powder is 64 ~ 84vol%, the dielectric film layer The dielectric constant κ is 300 or more. 22. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein when the solid content of the powders is within an adjustable range, the temperature coefficient of the capacitance of the dielectric film layer efficient 〇f capacitance) is between 1%. 2 3 · The method for manufacturing an organic substrate having a high dielectric film layer as described in item 丨 of the scope of the patent application, wherein the dielectric constant K of the dielectric film layer is greater than 2000, and the maximum dielectric constant is greater than 400. 24. The method for manufacturing an organic substrate having a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the organic polymer is an epoxy resin or an acrylic resin Page 20 1238026 6. Scope of patent application *-or similar. 25. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the solvent is selected from the group consisting of water, alcohol, or a group thereof. T. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the size of the shell material is on the nanometer scale, and the size of the core material is on the nanometer to micrometer scale. 2 7 · —A powder with a core-shell structure for forming a dielectric film layer on an organic substrate. The powder contains at least one core material selected from the group of conductive metals or semi-conductive ceramics Planting; and '° A plurality of shell materials are coated on the surface of the core material and are made of a dielectric ceramic material. 2 8. The powder with a core-shell structure as described in item 27 of the scope of patent application, wherein the core material is titanium or silver. 〃 2 9. The powder with a core-shell structure as described in item 27 of the scope of the patent application, wherein the core material is a titanate of an alkaline earth metal. 30. The powder having a core-shell structure according to item 27 in the scope of the patent application, wherein the core material is selected from the group consisting of scandium titanate, barium titanate, or calcium titanate. 3 1 · The powder with a core-shell structure as described in item 26 of the scope of the patent application, wherein the shell material is selected from the group consisting of Wei titanate, barium titanate, or titanate dance. 3 2. The powder with a core-shell structure as described in item 27 of the scope of the patent application, wherein the shell material is selected from the group consisting of a complex oxide or an oxide. 3 3. The powder with a core-shell structure as described in item 27 of the scope of the patent application, wherein the organic substrate may be a printed circuit board 'or be replaced by a substrate or a glass substrate or a flexible substrate. Page 21 1238026 6. Scope of patent application 34. The powder with core-shell structure as described in item 27 of the scope of patent application, in which the powder system is made by solution chemistry. 3 5 · The powders with core-shell structure as described in item 27 of the scope of patent application, wherein the manufacturing method of these powders is selected from the group combination of hydrothermal method, redox method and sol-gel method. 36. The powder with a core-shell structure as described in item 27 of the scope of the patent application, wherein the size of the shell material is nanometer scale, and the size of the core material is nanometer to micrometer scale. 37. An organic substrate having a high dielectric / dielectric film layer, comprising: an organic substrate; at least one electrode on the surface of the organic substrate; and a dielectric film layer plated on the electrode surface of the organic substrate, It comprises a plurality of powders having a core-shell structure, and the core-shell structure is covered with a plurality of shell materials on the surface of at least one core material; ^ wherein the core material is selected from conductive metals or semi-conductive ceramics or dielectric ceramics Group, the shell material is a dielectric ceramic material. 38. The organic substrate with a high dielectric film layer as described in item 37 of the scope of patent application, wherein the core material is titanium or silver. 39. The organic substrate with a high dielectric film layer according to item 37 of the scope of the patent application, wherein the core material is selected from the group consisting of scandium titanate, barium titanate, or calcium titanate. 40. The organic substrate with a high dielectric film layer as described in item 37 of the scope of the patent application, wherein the shell material is selected from the group consisting of scandium titanate, barium octoate, or calcium titanate. 41. The organic substrate with a high dielectric film layer as described in item 37 of the scope of patent application, wherein the shell material is selected from the group consisting of zirconium oxide or titanium oxide. 1238026 : ^ Please refer to the organic substrate of high dielectric film layer described in item 37 of the patent scope, and the " Hai electrode is a copper electrode or a gold electrode. 43. The organic substrate with a high dielectric film layer as described in item 37 of the scope of the patent application, further comprising a metal electrode sputtered on the dielectric film layer, which belongs to an insulating film-metal structure. "44 · The organic substrate with a high dielectric film layer as described in item 43 of the scope of patent application, wherein the metal electrode sputtered is a gold electrode. 4 5 · The dielectric film layer as described in item 37 of the scope of patent application The organic substrate, wherein the organic substrate may be a printed circuit board, or may be replaced by a stone substrate, a glass substrate, or a flexible substrate. 4 6. The high-dielectric film layer described in item 37 of the scope of patent application Organic substrate, in which the powder system is selected from the group consisting of the core-shell structure that is completely coated, the core-shell structure that is partially coated, and the nano-grade powder of the shell material. 4 47. If you apply for a patent The organic substrate of the high dielectric film layer described in item 37, wherein the size of the shell material is nanometer scale, and the size of the core material is nanometer to micrometer scale. Page 23