TW200522809A - Structure and fabricating method of a high-dielectric film formed on an organic substrate - Google Patents

Abstract

A method utilizes core-shell powders of metal-ceramic or ceramic-ceramic structure to fabricate a high-dielectric film on an organic substrate. The powders first mix with a solvent to deposit on the substrate and form a dielectric film. Furthermore, densification process such as laser annealing enables a compact structure of the dielectric film. The obtained dielectric film achieves excellent performances, including a wider control range of solid content, high dielectric constant, low TCC (temperature coefficient of capacitance), and low loss tangent.

Description

200522809

[Technical field to which the invention belongs] The f invention relates to a method of using a high dielectric dielectric 'on a substrate,' Mijiao '+ 抑 抑, and, at a relatively low temperature,:: 柘 柘 F: Ϊ 的 金属 — 陶瓷Or ceramic, porcelain core-shell structure series Jr Native plate structure and manufacturing method of forming a dielectric film layer with a high dielectric constant 0 [Previous technology] High density integration and miniaturization of Xihai #substructure system, For the master of development, not only does the circuit's functional density increase, but independent passive electronic components take up 80% of the circuit area, and the miniaturization and multifunctionalization of components are already underway.

Ik is advancing the manufacturing technology. The miniaturization process of passive electronic components has been reduced to a size that is not easy to control. Moreover, the traditional surface adhesion technology = (SMT) is used to bond the components to the substrate (printed circuit board). Often results in parasitic effects, low reliability, and footprint. In the prior art, a plurality of components are assembled and manufactured to form array products with different component functions. With the advancement of manufacturing technology for these array products, the density of the entire array component also continues to increase, which also produces the aforementioned parasitic effect and low Disadvantages of reliability and area. Therefore, in order to reduce the area occupied by the component, the embedded method or the technology integrated on the outer surface of the substrate has become a common method for electronic assembly. This is because the process of embedding passive components has no need for independent connection wires To the substrate, it can improve electrical functions, reduce costs, and make processes easy.

Page 6 200522809 V. Description of the invention (2) At present, there are two methods for manufacturing a high-dielectric mixed film layer, one is a conductor-insulating substrate composite film layer based on the principle of percolation; the other is based on random Dielectric material mixing theory, mixing insulating substrate (polymer) with high dielectric constant inorganic material (ceramic). Conductor-insulating substrate composite film is also called conductor-inorganic composite material, according to the research of CP · Wong et al. (Y · Roa, CP · Wong, "A Novel Ultra High Dielectric Constant Epoxy Silver Composite for Embedded Capacitor Application", IEEE 8th International Symposium on Advanced

Packaging Materials, p. 2 48 (2 0 0 2)), mixed with epoxy resin in the form of flaky silver, said that at a flaky silver mixed content of 11.23 vol% (volume percentage), a dielectric constant as high as κ = 1 0 0 0, the dielectric loss is as low as tan 5.2% 1.9%, but when its flake silver content is ι · 28νο1%, the dielectric constant κ = 15 0 0, although it is further increased, but the dielectric The loss is as high as tan 5 = 15%. Therefore, the conductor-inorganic composite material made based on the principle of infiltration has a very narrow range of conductor content for stable control of the process. The schematic diagram of the relationship between the dielectric constant and the particle composition containing i, such as the curve "1 · Conductor in Figure 1" “Insulator”; it has a high dielectric constant that rises in the critically permeable conductor content; but within a narrow range of conductor content, it will increase the leakage situation due to the electron jumping behavior, resulting in a high dielectric constant. Electricity loss and significantly reduced dielectric

200522809 V. Description of the invention (3) Line "2 · Polymer-Ceramic"; previous studies include T.R. Jow et al. ("High Dielectric Constant Material Development", IEEE, 1 9 92) Epoxy resin and lead titanate (PZT) ceramic particles are mixed to obtain a high dielectric constant film layer. Further, C.P.Wong et al. (US patent US65446 51) use barium titanate (BaTi〇3) and 鍅Lead titanate (PZT) ceramic particles are mixed with high dielectric sequestration, but high dielectric I f number 1 50 is obtained only when the content of ceramic particles is greater than 85 vol%. To obtain a higher dielectric constant, it is usually necessary to increase Ceramic particles ^ However, when the solid content of the ceramic particles with a dielectric constant greater than 80 vol% (volume percentage) is added, the film layer will become brittle and increase the f M ^ group I difficulty. Increase the solid content of ceramic particles: Difficulty, and the dielectric constant does not perform satisfactorily. In the mathematical technique, it can be made into a high dielectric constant shape. "I: process convenience and robustness; if you want Into the core-shell structure particles of Taurman and metal = even if you want to In theory, you will get a very high dielectric: based on the formation of the film layer, although the shape of the ceramic dielectric film layer is difficult to produce. But the existing technology must be directly thousands of degrees, and the general substrate: table; ceramic The temperature of 兖 is only 100 to 200 degrees Celsius, root; ^ or soldering process, but k. …, To support the high sintered ceramics [Content of the invention] The technical problem to be solved in the process 3f is that the prior art has a high dielectric on the substrate, and there is no stable technology.

f page 8. The number of rabbits and the dielectric with low dielectric loss 200522809 V. Description of the invention (4) The problem that the film layer is complicated by the above-mentioned conventional technology. Plurality with core-shell structure: Ί: 丨 disperse these powders into a solvent, and then coat the powders with: 1 & on an organic substrate to form a dielectric film layer, and finally cure Or sensitizing the dielectric film layer. M tf: The provided high-dielectric film layer is formed on the surface of an organic substrate under the temperature of a substrate having a powder with a core-shell structure; the second material of the machine is a powder of a structure whose core material is metal or conductive Asexual: inorganic materials with electrical properties, or cores with a height coefficient. ’*; 丨 The dielectric film layer has a high dielectric constant and low capacitance temperature. The added dielectric film layer has a high powder solid content, which can be densified by using a substrate (such as a laser).固 The powder solid content can be adjusted in the range of 45, and the capacitance temperature in the powder solid content can be adjusted. In addition, the laser energy can be completely obtained under the condition of energy dense sound frequency 5 ~ 15〜Z. " fcm and pulse ίκ and Π constants are more than the above, dielectric: the dielectric film layer formed on the second, and there is a wider powder on the organic substrate " and the low capacitance temperature coefficient is = dielectric and has Yi Yun can be applied to

200522809

P.200522809 V. Description of the invention (6) --- If the aforementioned core-shell structure powder is used, mixed and dispersed in a solvent, then plated on an organic substrate, and then annealed with laser energy (anneaHng) to densify (Densification) The dielectric film layer, and the dielectric constant of the obtained dielectric film layer will be as shown in the curve "3B · core-shell structure" of Fig. 1 at a schematic point where the solid content is 100 vol%. From the comparison of the curves in the figure}, the dielectric film layer developed by the present invention using the core-shell structure powder can obtain a high dielectric constant under a wide range of composition and solid content adjustment, which is indeed a simple and stable The process. Further speaking, the method for manufacturing an organic substrate having a high dielectric film layer provided by the present invention includes the steps shown in FIG. 2: First, a plurality of powders having a core-shell structure are provided (step 110). Then, the powder is dispersed. Equal powder to a solvent (step 1 20): Next, the powder and the solvent are plated on an organic substrate to form a dielectric film layer (step 13); finally, curing or branching the Dielectric film layer (step 14). Among them, the densification procedure can be performed by laser annealing. The technical content of the present invention will be described in detail through the first preferred embodiment of the present invention. First, a hydrothermal synthesis method is used to form a powder with a core-shell structure under the conditions of 150 ° to 2000 ° C. using titanium (Ti) metal as the core material and strontium titanate (SrTi%, ST for short) as the shell material. The definition of this powder is Ti-ST. In addition, 'synthesis of nano-scale silver particles (called nano-Ag) by redox method' is followed by the addition of the coupling agent 3- (aminopropyl) trimethoxysilane Aps ((3-aminopropyl) trimethoxysilane) to make it react Covered on the surface of nano-scale silver particles to form the first shell, the reaction product is called Ag-.

200522809 V. Description of the invention (7) APS, and then add the organic alkoxide which is used to react with aps at 150 ° C for sol-gel aging reaction. The strontium ion and titanium ion are combined with the coupler to form a titanate pin. Two-layer shell. Then, the powder with a core-shell powder structure was obtained by centrifugal drying, and this powder was defined as Snake-ST. The Ti-ST or Ag-ST core-shell powder is mixed with acrylic resin, and it is coated on a copper electrode (Cu electrode) of an organic substrate (using a printed circuit board pcB as an example) by a spin coating method to form The dielectric film layer is then cured at 150 C, as shown in Figures 3A and 3B; the cured dielectric film layer is covered with a mask having an electrode pattern, and a metal electrode is sputtered, such as an Au electrode So that it forms a gold f, insulating film-metal MIM structure with the copper bottom electrode, as shown in Figures 3C and 3D; therefore, the invention of the manufacturing method of the high dielectric film layer & can further include sputtering Another step is the step of forming an electrode on the dielectric film layer to form a metal-insulating film-metal. Next, the dielectric characteristics (dielectric = 1 iV dielectric loss tan 5), dielectric stability with frequency, and temperature stability ((C (T) -C ( 25 ° C)) / (C (25 ° C) (τ_) 'where C is the capacitance and τ is the temperature), etc., == See Figure 4 for the dielectric film layer formed by the Ti_ST core-shell structure; often = 'With the increase of the solid content of the τ core-shell structure powder at 64 s, when the solid content of the Tl_ST core-shell structure powder is 4v%, the dielectric constant κ is stably maintained at the loss t ... The average has been maintained at 4% or less. After 9_1%, the content of organic resin makes the nuclear-grade "plutonium powder difficult to mix, which not only greatly reduces the dielectric.

200522809

The adhesion of the film on the organic substrate is also greatly reduced due to the formation of a dielectric constant. Residual pores of Qiao and Xi are made as shown in Fig. 5. For Ag-ST core-shell structure dielectric film ▲, at 1MΗζ, with Ag_ST core-shell structure powder solids. The dielectric constant increases accordingly when the Ag_ST core-shell powder contains "70vol%" and the dielectric constant κ is stably maintained at about 300, which is less than 7% at 5% tan 5. The tAg_ST core-shell powder The body solid content loss is 82 vol%, and the dielectric constant and dielectric loss are extremely dramatic. However, after the solid content of the osmotic powder is exceeded, Α: 'decay. &Quot; Electrical characteristics extremely fast

Please refer to Figure 6, which shows the typical capacitor temperature coefficient TCC (temperature coefficient 〇f capacitance, that is, the temperature stability of the capacitor) within the respective dielectric characteristics of the Ti-ST and Ag-ST. The dielectric temperature of the core-shell structure or the Ag-ST core-shell structure has a capacitance temperature coefficient in the range of 1%. 'As shown in Fig. 7, for the change of the dielectric characteristics of the frequency, the dielectric constant of the Ti-ST core-shell structure dielectric film & is greater than 400, and the dielectric constant is below 1 MHz. The electric constant K is maintained at about 400. When the frequency is lower than 1M Η z frequency, the dielectric constant of the Ag-S T core-shell structure dielectric film & is greater than 200, and the frequency is greater than 1 MHz, and the dielectric constant K is maintained at about 200. Therefore, from Figures 4 to 7, it can be seen that the dielectric film layer of the core-shell structure can provide a wide range of powder solid content for adjustment, and can be maintained at a high dielectric constant. Adjustable range of powder solid content is 45 ~ 9 Ονο 1%, # electric constant K at 1MHz is more than 2 0 0; better. Adjustable range of powder solid content is 6 4 ~

Page 13 200522809 V. Description of the Invention (9) 84vol%, the number of Leiyinuo & electric cranes at 1MHz is more than 300. In other words, when the frequency is below 1 MHz, the core-shell is intruded; the dielectric constant K of the double-rolled dielectric film layer of + «1 ^ 9 Λ ^ aI is at least greater than 200, and preferably greater than 40 η.田土 丄 .. ^ ^ No—— U〇 Furthermore, the solid content of any powder can be adjusted below. The temperature range of the capacitor in the second preferred embodiment of the present invention is maintained at 1%, r: i = glue method. ZΓ, Tl precursors (such as propanol, vJH and Tv!) Are effectively coated with 100 to 2000 ^ particles of titanium titanate Y5P (BaTl (U dielectric particles' to form a core-shell structure Powder, as shown in Figures A and B of the attachment. This core-shell structure powder is dispersed in a volatile solvent (such as alcohol), and is applied on an organic substrate, such as a PCB substrate, by spin coating. I is less than 2 5 After the 0 C baking furnace is dried and adhered, the core-shell structure is annealed and densified with a laser energy density of 40 to 150 mJ / cm2 with a claw excimer laser and a pulse frequency range of 5 to 20 Hz. Electrical film layer; repeated plating and annealing of 14 layers, typical thickness of 2 ~ 3 layers will be less than 2 m, as shown in Figure 1c of the appendix. ^ Ti precursor after irradiation with 248nm excimer laser energy The coated film is obtained by annealing the Y5p_Ti core-shell film at a laser energy density of 65mJ / cm2. The constant is about 23 ° at a frequency of 1MHz, and the dielectric loss is small. Please refer to Figures 8 and 9 for details. The dielectric film layer covered by the precursor of Zr is densified with a laser energy density of 125mJ / cm2, and the γ5ρ pre-crystallized powder and Zr are measured at 1MHz. Body volume ratio (v〇1%) i: 2 (Y5p: Zr-gel two H) of the core-shell structure powder dielectric film, the dielectric constant is about 2 2 0, the dielectric loss is less than 1.5 %. And the volume ratio of γ5P pre-crystallized powder to Zr precursor

Page 14 200522809

V. Description of the Invention (ίο) 1: 3 (Y5P: Zr-geW: 3) The dielectric film layer of the core-shell structure powder can obtain a dielectric constant of about 450 and a dielectric loss of less than 2.5%. The resulting capacitor temperature coefficient of this core-shell structure powder is also around 1%. 〃 In summary, the present invention uses a core-shell structured powder to form a dielectric film layer on an organic substrate, which has a wide range of solid content adjustment, high dielectric constant, low capacitance temperature coefficient, and low dielectric loss. Suitable for substrates with relatively low temperature resistance. The above mentioned are only the preferred embodiments of the present invention. Travel # = To limit the scope of implementation of the present invention. After the person skilled in the art has disclosed the present invention, the modifications and replacements are based on the technical idea of the present invention. t derivative creation. Therefore, all changes and modifications of r made without departing from the scope of the technical idea of the present invention should be covered by the patent application park of the present invention.

200522809 Brief description of the diagram. Figure 1 is a comparison of the core-shell structured functional film of the present invention with the prior art. The silk sheet does not show the dielectric constant under different particle compositions (volume percentage). Figure 2 shows the high dielectric of the present invention. The main flow chart of the method for manufacturing the film layer; Figures 3A-3D are the manufacturing flow chart of the present invention for forming a high-dielectric film layer and the MIM structure on an organic substrate; and Figure 4 shows the first preferred embodiment of the present invention. At room temperature and 1 MHz, the solid content of Ti-ST changes the dielectric characteristics of the dielectric film layer formed by the core-shell structure. Figure 5 shows the first preferred embodiment of the present invention at room temperature and 1 MHz. , Ag-ST solid content changes the dielectric characteristics of the dielectric film layer formed by the core-shell structure; ^ Figure 6 shows changes in the electrical temperature coefficients of the dielectric film layer in the first preferred embodiment of the present invention; FIG. 7 shows the change of the dielectric characteristics of the dielectric film layer to the frequency in the first preferred embodiment of the present invention. FIG. 8 shows the frequency change of the laser annealing pulse M in the second preferred embodiment of the present invention. Y5P dielectric particles cover different Zr precursor colloid shell ratios. In MHZ, The change of the dielectric constant of the lower dielectric film layer; and FIG. 9 shows that in the second preferred embodiment of the present invention, the laser annealing pulse 2 radiance ratio covers different 5 r dielectric precursors of Y 5 P dielectric particles. The colloidal shell layer ratio, the dielectric loss of the dielectric film layer changes under HZ measurement. ^ Figures A, B, and C of the annex show the second embodiment of the present invention. And Ti precursors covered with barium titanate (Y5P) by sol-gel method

200522809 Schematic illustration of powder, powder with core-shell structure formed. Figure 1A shows the slope cover, Figure 1b shows the Ti coating, and Figure 1C shows the PCB substrate and its dielectric film layer. [Illustration of Symbols] Step 1 2 0 Step 1 3 0 Step 1 4 0 Step 1 1 0 Provide a plurality of powders with a core-shell structure and disperse the powders into a solvent. The powders and the solvent are plated on A dielectric film layer on an organic substrate to solidify or densify the dielectric film layer

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Claims (1)

200522809 VI. Application Patent Scope 1 · A method for manufacturing an organic substrate with a high dielectric step: a film layer, comprising the following steps: shell and shell 2 manufacturing system manufacturing system manufacturing system manufacturing system manufacturing Isoelectric film layer; curing should be applied as a special method, such as applying for a special method, such as applying for a special method, such as applying for a special method, such as applying for a special method, group combination. Such as applying for a special method, group combination. If you apply for a special method, there are at least first-class powders with a core-shell and a dielectric film. The core range includes the range of benefits, the range of benefits, the range of benefits, and the plurality of powders of the structure. The surname is structured on the surface of a plurality of nuclear materials; into a solvent; the solvent is bell-shaped on an organic substrate to form a layer. The organic beauty core material with high dielectric film layer described in item 1 is a conductive metal. The organic substrate with a high dielectric film layer described in Item 1 is made of Chin or Silver. The nucleus material having a high dielectric film layer described in item 1 is a semiconductive ceramic. The core material of the organic substrate with a high dielectric film layer described in item 1 is a osmium salt of a red metal. The core material of the organic substrate with a high dielectric film layer described in item 1 is selected from the range of titanium kL, barium titanate, or osmium acid. The organic substrate with a dielectric film layer described in item 1, wherein the shell is The material is selected from the organic substrate with a dielectric film layer as described in Item 1 of Kinebu I, Barium Titanate, or Titanate. The shell material is a complex oxide or titanium oxide. Group 200522809 ----—---------—____ 6. Application for Patent Scope Combination. 9 · The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of patent application, wherein the slope plating step of these powders uses a spin coating or printing technique. I 0 · The method for manufacturing an organic substrate having a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the dielectric film is widely formed on a copper electrode (Cu electrode) of the organic substrate. II. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of patent application, further comprising sputtering / metal electrode on the dielectric film layer to form a metal-insulating film-metal structure. step. 1 2 · The method for manufacturing an organic substrate with a high dielectric film layer as described in item 丨 丨 of the scope of the patent application, wherein the metal electrode sputtered is a gold electrode. 1 3 · The method for manufacturing an organic substrate with a south dielectric film layer as described in item 1 of the scope of the patent application, wherein the organic substrate may be a printed circuit board, or a silicon substrate, a glass substrate, or a flexible substrate. 1 4 · The method for manufacturing an organic substrate having a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the curing step of the dielectric film layer uses laser annealing to densify the dielectric film Floor. 15 · The method for manufacturing an organic substrate having a high dielectric film layer as described in item 14 of the scope of the patent application, wherein in the laser annealing process, the preferred laser source is an excimer laser. 1 6 ^ A method for manufacturing an organic substrate with a high dielectric film layer as described in / claimed in item 15 of the patent scope, wherein in the laser annealing process, the laser energy density is 40 to 150 mJ / cm2, and the pulse frequency is 5 to 15Hz. Page 19, 200522809 VI. Scope of patent application 17 · As in the method of Shen Qing patent Fan Yuan Chu manufacturing method, wherein the core-shell junction partially covered by the organic substrate with a high dielectric film layer described in item 1: System " The complete coating of the two-shell structure, the ° structure 'and the nano-grade powder of the materials described in the group cylinder 0 1 8. As described in the patent application Su Shizhu, manufacturing, soil "Secret N brother 1" Organic substrate coatings k, '/, and Chinese with high dielectric film layers are made using solution chemistry. 19. According to the scope of the patent application, the worker has a manufacturing method with a high dielectric film layer, wherein the manufacturing method of these powders is selected from the group combination of a hydrothermal reduction method and a sol-gel method. 2 ·· As described in the first patent scope of the organic substrate with a high dielectric film layer ▲ ie Fang // MeiHai special powder with a solid content of 45 ~ 90vol%, Guhai dielectric film layer The dielectric constant κ is higher than 200. 21 · The method for manufacturing an organic substrate with a high dielectric film layer as described in Item 1 of the declared patent scope 'wherein the powder preferably has a solid content of 6 4 to 8 4 vol%' the dielectric of the dielectric film layer Electrical constant 1 (above 300. 22. Method of manufacturing organic substrate with high dielectric film layer as described in item 1 of the scope of patent application ^ Where the solid content of these powders is within an adjustable range, the The valley temperature coefficient (tefflpera1: ure coefficient coefficient) of the dielectric film layer is between 1%. 23. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the dielectric constant K of the dielectric film layer is greater than 2000, and the maximum dielectric constant is greater than 400. 24. The method for manufacturing an organic base having a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the organic polymer is epoxy resin or acrylic acid i. Page 20 200522809 6. Scope of patent application or similar. 2 5. The method for manufacturing an organic substrate with a high dielectric film layer as described in item 1 of the scope of the patent application, wherein the solvent is selected from Group Two of water, alcohol, or a group thereof. 2 6. The method for manufacturing an organic i-board with a high dielectric film layer as described in item 丨 of the patent application scope, wherein the size of the shell material is nanometer scale, and 枋 = is nanometer to micrometer scale. / Material size 2 7 · —A powder with a core-shell structure for forming a dielectric film layer on an organic substrate. The powder contains: at least one core material, selected from conductive metals or semiconductors Group of ceramics; and '' a plurality of shell materials covering the surface of the core material, which are dielectric ceramic materials. 28. The powder with a core-shell structure as described in item 27 of the scope of the patent application, wherein the core material is thorium or silver. 29. The powder having a core-shell structure as described in item 27 of the scope of the patent application, wherein the core material is a titanate of an alkaline earth metal. 30. The powder having a core-shell structure according to item 27 of the scope of the patent application, wherein the core material is selected from the group consisting of gill titanate, barium titanate, or calcium titanate. 31. The powder having a core-shell structure according to item 26 of the scope of the patent application, wherein the shell material is selected from the group consisting of lithium titanate, barium titanate, or calcium titanate. 32. The powder with a core-shell structure as described in item 27 of the scope of the patent application, wherein the 4th material is selected from the group consisting of zirconium oxide or titanium oxide. 33. The powder with a core-shell structure as described in item 27 of the scope of the patent application, wherein the organic substrate may be a printed circuit board, or a silicon substrate or a glass substrate or a flexible substrate may be substituted. Page 21 200522809 VI. Scope of patent application 34. The powder with core-shell structure as described in item 27 of the scope of patent application, in which the powder system is made by solution chemistry method. 3 5 · The powders with core-shell structure as described in item 27 of the scope of patent application, wherein the manufacturing method of these powders is selected from the group combination of hydrothermal method, redox method and sol-gel method. / 36 • The powder with a core-shell structure as described in item 27 of the scope of patent application, wherein the size of the shell material is nanometer scale, and the size of the core material is nanometer to micrometer scale. % 37 · An organic substrate with a high dielectric film layer, comprising: an organic substrate; at least one electrode on the surface of the organic substrate; and an n-electron film layer on the surface of the electrode of the organic substrate. Comprising a plurality of powders having a core-shell structure, the core-shell structure being coated on the surface of at least one core material by a plurality of shell materials; wherein the core material is selected from the group consisting of conductive metal or semiconductive ceramic urn or dielectric ceramic In combination, the shell material is a dielectric ceramic material. 38. The organic substrate of the local dielectric film layer as described in item 37 of the Shen Jing patent scope, wherein the core material is Chin or Silver. 39. The organic substrate of the south dielectric film layer according to item 37 in the scope of the Shenqing patent, wherein the core material is selected from the group consisting of gill titanate, barium titanate, or calcium titanate. 40. The organic substrate with a high dielectric film layer according to item 37 of the scope of the patent application, wherein the shell material is selected from the group consisting of gill titanate, barium titanate, or calcium titanate. 41. The organic substrate with a high dielectric film layer as described in item 37 of the scope of application for a patent, wherein the double-layer material is selected from the group consisting of a junction oxide or a zinc oxide. 200522809 VI. Scope of patent application 42. The organic substrate with a high dielectric film layer as described in item 37 of the scope of application for patent application, wherein the Haihai electrode is a copper electrode or a gold electrode. 43. The organic substrate with a high dielectric film layer as described in item 37 of the scope of the patent application, further comprising a metal electrode sputtered on the dielectric film layer to form a metal-insulating film-metal structure. 44. The organic substrate with a high dielectric film layer as described in item 43 of the scope of patent application, wherein the metal electrode hidden in the plating is a gold electrode. 45. The organic substrate with a high dielectric film layer as described in item 37 of the scope of the patent application, wherein the organic substrate may be a printed circuit board, or it may be replaced by a silicon substrate or a glass substrate or a flexible substrate. 46. The organic substrate with a high dielectric film layer as described in item 37 of the scope of the patent application, wherein the special powder system is selected from the group consisting of a fully-coated remote core-shell structure, a partially-coated core-shell structure, and the Group composition of nano-grade powder of shell material. 47. The organic substrate with a high dielectric film layer as described in item 37 of the scope of the patent application, wherein the size of the shell material is nanometer scale, and the size of the core material is nanometer to micrometer scale. Page 23