JPH11251700A - Copper-metallized composition and glass ceramic wiring board using the composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a copper-metallized composition which can be baked simultaneously with a glass ceramic wiring board when the composition is filled in the via holes of the board, and can be suitably used for various kinds of circuit boards, multilayered wiring boards for high frequency, etc., because the projection of obtained via hole conductors from the surface of a glass ceramic insulating substrate can be suppressed effectively. SOLUTION: A copper-metallized composition for via hole is prepared by mixing 2-20 pts.wt. SiO2 -Al2 O3 -RO (R: an alkaline earth metal)-B2 O3 glass frit having a glass transition point of 700-750 deg.C and 0.3-5 pts.wt. inorganic powder containing CaO in 100 pts.wt. copper powder. The composition is baked simultaneously with a glass ceramic substrate. Therefore, a glass ceramic wiring board S on which the projecting heights of via hole conductors 3 from the surface of the porcelain substrate are suppressed to <=5 μm is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a copper metallizing composition for via holes which can be co-fired with a glass ceramic substrate, for example, a green sheet, and a co-firing with the glass ceramic substrate using the same. With good consistency of firing shrinkage, unevenness from the surface of the porcelain insulating substrate obtained by firing the formed via-hole conductor is extremely small, and in particular, various circuit boards having low-resistance via-hole conductors suitable as thermal vias, The present invention relates to a glass ceramic wiring board applied to a high-frequency multilayer wiring board and the like.

[0002]

2. Description of the Related Art Conventionally, as an insulating base for various kinds of wiring boards such as a semiconductor element housing package for housing a semiconductor element and a hybrid integrated circuit device mounted with various electronic components in addition to the semiconductor element, an electric insulating property and a chemical insulating property are known. Alumina ceramics having excellent properties such as mechanical stability have been widely used.

However, in recent years, wiring boards frequently used in the high frequency range of 1 to 10 GHz in the communication field typified by mobile phones have been further reduced in conductor loss and reduced in size compared to the insulating base made of alumina ceramics. Therefore, a glass-ceramic wiring board having a wiring layer made of copper (Cu), gold (Au), or silver (Ag) as a low-resistance conductor and having a dielectric constant similar to that of alumina ceramics is required. Is attracting attention as a wiring board for
For example, application to a power amplifier module or the like of a mobile phone is being studied.

On the other hand, the glass ceramic has a problem that heat conductivity is lower than that of alumina ceramic and heat radiation generated by a semiconductor element contained therein is inferior. Form a via hole from the die attach part to be mounted to the back surface of the insulating substrate, fill the via hole with a conductive material having high thermal conductivity to form a thermal via, and efficiently transfer heat through the conductive material having high thermal conductivity of the thermal via. Measures such as radiation are taken.

As the conductive material having such a high thermal conductivity, copper, gold and silver, which are the above-mentioned low-resistance conductors, are applicable.
Gold has the disadvantage of being expensive. On the other hand, silver can be fired in the air, and wire bonding can be performed without plating on the wiring conductor formed on the surface of the insulating substrate. This is advantageous in terms of cost, but the silver wiring conductor has migration or solder corrosion. There is a disadvantage that the reliability is inferior to our problem, and when palladium or the like is added to silver to improve it, the conductor resistance becomes high, and it cannot be applied particularly to a wiring board used in the high frequency region. There was a problem.

Accordingly, the low-resistance conductive material must be fired in a non-oxidizing atmosphere, and the wiring conductor on the surface of the insulating substrate requires plating, but high reliability can be ensured. Research and development are being carried out diligently.

A glass-ceramic wiring board using copper as a wiring conductor is formed, for example, by forming a slurry prepared using glass ceramic raw material powder and an organic binder into a sheet, and then forming a via hole or the like in the obtained glass ceramic green sheet. Punching, filling the via holes with a conductive paste containing copper as a main component, forming a predetermined wiring pattern on the green sheet using the same conductive paste, and aligning a plurality of these sheets. After lamination under pressure, it has been generally manufactured by heating the laminate in a non-oxidizing atmosphere consisting of a nitrogen atmosphere containing water vapor to remove the binder and fire it.

On the other hand, the thermal via can be simultaneously formed in the same manner as a normal via hole, and a conductive paste for the via hole is formed in an opening portion of a glass ceramic green sheet punched at a portion where a semiconductor element is mounted. And fired.

However, in general, the insulating base of the glass ceramic wiring board and the via-hole conductor made of copper have different firing shrinkage rates. That is, since spherical copper powder is used for the copper conductor paste for forming the via-hole conductor. Since the filling property of copper powder is high and the firing shrinkage is small, or the firing start temperature of the copper conductor paste is lower than that of the glass ceramic green sheet, the firing shrinkage curves of the two tend to be inconsistent, and It is difficult to make the shrinkage ratios consistent with each other, and the surface of the via-hole conductor forms irregularities on the surface of the insulating substrate due to the difference in shrinkage behavior between the two.

Therefore, particularly when the via-hole conductor forms a thermal via, if the via-hole conductor protrudes in a convex shape, a connection failure may occur when the semiconductor element is mounted on the surface of the insulating base, or the semiconductor element may be damaged. When the semiconductor element is mounted on the surface of the insulating base by holding down the semiconductor element, there is a defect that the semiconductor element itself is broken.

When the via-hole conductor is depressed in a concave shape, a void is easily generated at a via-hole junction between the layers.
There was a problem that connection reliability and heat dissipation were not sufficient.

In order to solve the above-mentioned drawback caused by the via-hole conductor in the bonding pad portion projecting in a convex shape, the via-hole conductor electrically connected to the die-attach portion by removing the die-attach portion on which the semiconductor element is mounted is removed. It has been proposed to provide such a device (see, for example, JP-A-5-13).
No. 6285).

[0013]

However, in the above proposal, since the via hole conductor is provided at a position distant from the die attach portion, a thermal via for dissipating heat generated in the accommodated semiconductor element is provided directly below the semiconductor element. It is difficult to efficiently dissipate the heat, and is not suitable for various circuit boards or high-frequency multi-layer wiring boards, etc., on which a semiconductor element whose density is increasing is mounted. There was a problem that was.

At present, no study has been made on the depression of the via-hole conductor in the glass ceramic substrate except for the adjustment of the amount of shrinkage of the paste.

[0015]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to simultaneously sinter a copper metallized composition filled in a via hole and a glass ceramic substrate, for example, a green sheet. The obtained via-hole conductor can effectively control whether it protrudes or depresses from the surface of the insulating substrate made of glass ceramic porcelain, and in particular, various circuit boards having thermal vias and high-frequency multilayer wiring boards It is an object of the present invention to provide a copper metallized composition suitable for use with a glass ceramic wiring board using the same.

[0016]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies, and as a result, have found that SiO ₂ —Al
₂ O ₃ -RO: By containing the inorganic powder containing (R alkaline earth metal) -B ₂ O ₃ based glass frit and CaO in the copper metallizing composition, copper metallizing composition filled in the via hole and the glass ceramic It has been found that even when the substrate is fired at the same time, the obtained via-hole conductor can reduce protrusions and depressions from the surface of the insulating substrate made of glass ceramic porcelain.

That is, the copper metallized composition of the present invention is a copper metallized composition for via holes that can be co-fired with a glass ceramic substrate, and has a glass transition point of 700 to 100 parts by weight of the main component copper powder. 750 ° C SiO ₂
—Al ₂ O ₃ —RO (R: alkaline earth metal) —B ₂ O
It is characterized by containing 2 to 20 parts by weight of a ₃ series glass frit and 0.3 to 5 parts by weight of an inorganic powder containing a CaO component.

In addition, CaO in the copper metallized composition
It is preferable that the inorganic powder containing is CaZrO ₃ or CaTiO ₃ .

In addition, SiO in the copper metallized composition
_{2 -Al 2 O 3 -RO (R} : alkaline earth metal) -B ₂
Glass transition point of O ₃ glass frit is 700 to 750
It is preferable that the content is 3 to 15 parts by weight based on 100 parts by weight of the copper powder as the main component.

Further, the glass ceramic wiring board of the present invention is a glass ceramic wiring board having a via-hole conductor formed by simultaneously firing the above-mentioned copper metallized composition with a glass ceramic base, wherein the glass ceramic base is fired. The height of the via-hole conductor surface with respect to the obtained porcelain substrate surface is -10 μm to +5 μm.

Further, the via hole conductor forms a thermal via for heat dissipation.

It is more preferable that the borosilicate glass frit has a glass transition point of 720 to 750 ° C. In addition, it is more desirable that the copper metallized composition is simultaneously fired with the glass ceramic substrate at a temperature of 700 to 1000 ° C. in a nitrogen atmosphere.

[0023]

According to the present invention, a copper metallized composition for a via hole is made of SiO ₂ having a glass transition point of 700 to 750 ° C.
—Al ₂ O ₃ —RO (R: alkaline earth metal) —B ₂ O
_Since it contains an appropriate amount of the ₃ series glass frit and the inorganic powder containing CaO, it can be fired simultaneously with the glass ceramic substrate at a temperature of 700 to 1000 ° C., and can match the firing shrinkage behavior with the glass ceramic substrate. When co-firing at the above temperature, the glass component in the copper metallized composition and the glass ceramic substrate mutually diffuse due to the reaction between the glass frit and the glass ceramic substrate, and the shrinkage of the copper metallized composition filled in the via hole is accelerated. As a result, it is possible to obtain a glass-ceramic wiring board having very small via-hole conductor irregularities on the surface of the glass-ceramic porcelain obtained by firing.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the copper metallized composition of the present invention and a glass ceramic wiring board using the same will be described in detail.

The copper metallized composition of the present invention is a copper metallized composition for via holes that can be co-fired with a glass ceramic substrate, for example, a green sheet, and has a glass transition point with respect to 100 parts by weight of the main component copper powder. Is 700
To 750 ° C. of _{SiO 2 -Al 2 O 3 -RO (} R: alkaline earth metal) -B ₂ O ₃ system 2-20 parts by weight of glass frit, 0.3 to 5 parts by weight of inorganic powder containing CaO components It contains.

As the main component copper in the copper metallized composition of the present invention, it is more preferable to use spherical powder having an average particle diameter of 1 to 10 μm, and more preferably 2 to 6 μm.

The specific surface area of the copper powder is 0.2 to 0.2.
Is about 1.5 m ² / g, when the shape of the copper powder is non-spherical, for example, when a dendritic powder prepared by electrolytic method, packing density of the copper powder in the copper conductor paste is lowered In addition, there is a problem that coarse voids are easily generated inside the via-hole conductor after firing.

On the other hand, the organic binder used for the copper conductor paste is an acrylic resin, preferably a methacrylic acid resin, having excellent thermal decomposability in a non-oxidizing atmosphere, and the solvent is dibutyl phthalate or the like. A general conductive paste solvent such as α-terpineol can be used.

The firing of the glass ceramic porcelain having the wiring pattern formed by using the copper conductor paste is performed as follows.
Generally, it is carried out in a nitrogen atmosphere mixed with water vapor. In order to react a small amount of carbon remaining after decomposition of the organic binder with water vapor in the atmosphere and to remove the carbon efficiently, the firing shrinkage starting temperature of the glass ceramic substrate is set to 700. ° C. or higher, it is desirable to perform the decarbonization treatment in a porous state before the glass ceramic substrate starts firing shrinkage, the copper metallized composition to be co-fired with the glass ceramic substrate also has a firing shrinkage start temperature of the glass ceramic substrate and It is desirable to be as high as possible.

Next, the glass frit in the present invention is a borosilicate glass frit represented by SiO ₂ —Al ₂ O ₃ —RO (R: alkaline earth metal) —B ₂ O _3. Has a feature that it is easy to increase the glass transition point to 700 ° C. or higher, and rapidly softens and flows at a temperature equal to or higher than the transition point.

[0031] In the borosilicate glass represented by Pyrex glass (SiO ₂ -B ₂ O ₃ system), the SiO ₂ -Al ₂ O ₃ -RO by increasing the amount of SiO ₂
There is not possible to have: (R alkaline earth metal) -B ₂ O ₃ system glass and similar glass softening point, but the glass transition point as low as 600 ° C. or less, and gradual decrease of the glass viscosity versus temperature Therefore, it is very difficult to match the shrinkage curve of the copper metallized composition to which the borosilicate glass is added with the shrinkage curve of the glass ceramic substrate.

When the glass transition point is increased by adjusting the composition of the borosilicate glass, the firing temperature (700 to 1)
(000 ° C.), the fluidity of the glass is poor, and the copper metallized composition cannot be densely sintered.

On the other hand, the copper powder as the main component in the copper metallized composition of the present invention depends on its particle size distribution and shape.
Generally, the firing shrinkage starts at about 500 ° C., so that the shrinkage starting temperature of the copper metallized composition is increased, and the simultaneous firing temperature with the glass ceramic substrate (700 to 1000).
(C), it is effective to add a glass powder having a high glass transition point to obtain a dense structure.

That is, it is necessary to add a glass powder which is in a solid state at a low temperature below the glass transition point, becomes a liquid phase above the glass transition point and rapidly softens and flows into the copper metallized composition. Yes, the expression of glass softening point is often used to express the softening properties of glass,
Even if the glasses have the same softening point, the change in the glass viscosity with respect to the temperature greatly varies depending on the glass composition system. Therefore, the selection of the glass composition system is important.

Therefore, in the present invention, when the glass transition point of the borosilicate glass frit is lower than 700 ° C., the shrinkage of the via-hole conductor during firing proceeds at a lower temperature than that of the glass-ceramic substrate. The via hole conductor has a large protrusion height, and the glass transition point is 75
If the temperature exceeds 0 ° C., the softening flow of the glass during firing becomes insufficient, so that densification failure of the via-hole conductor occurs. Therefore, the entire via-hole conductor protrudes in a convex shape, and the resistance value of the via-hole conductor also increases.

In particular, for high-frequency applications to which the wiring board of the present invention is applied, it is necessary that the resistance value is at least about 5 mΩ / mm or less (via hole diameter: 0.1 mm).

Next, when the content of the borosilicate glass frit is less than 2 parts by weight based on 100 parts by weight of the copper powder as the main component, the effect of suppressing sintering of the copper powder is small, and the surface of the insulating substrate of the via-hole conductor is reduced. The height of the protrusion from the substrate becomes large, and if it exceeds 20 parts by weight, the resistance value of the via-hole conductor becomes high. Therefore, the content is limited to 2 to 20 parts by weight, and further, the glass transition point is 720 to 750 ° C. Its content is 3 to 15
More preferably, it is by weight.

Further, in order to promote shrinkage due to the softening flow of glass in the paste, the copper conductor paste has a C content.
An inorganic powder containing aO is added. Any inorganic powder containing CaO may be used as long as it reacts with the glass in the paste during firing and promotes the softening flow of the glass.
Particularly, CaZrO ₃ and CaTiO ₃ can be suitably used. The amount of the inorganic powder containing CaO depends on the particle size and the glass powder added to the copper conductor paste, but is preferably 0.3 to 5 parts by weight per 100 parts by weight of the copper powder.
If the amount is less than 0.3 parts by weight, the effect of promoting shrinkage is small, and the dent of the via hole conductor becomes large. If the amount exceeds 5 parts by weight, ZrO ₂ or TiO ₂ or the like after reaction with the glass inhibits sintering of the via hole and becomes convex. Protrude. The most desirable addition amount is 1 to
3 parts by weight. On the other hand, the glass ceramic porcelain in the present invention is composed of a mixture of a borosilicate glass containing SiO ₂ and B ₂ O ₃ and a ceramic filler, and the borosilicate glass has a glass transition point of 700 to 800.
A crystalline glass of the type SiO ₂ —Al ₂ O ₃ —RO (R: alkaline earth metal, Zn) —B ₂ O ₃ having a mean particle size of 1 to 5 μm is preferable.

If the glass transition point is lower than 700 ° C., shrinkage of the glass ceramic porcelain starts at a low temperature, so that it is difficult to sufficiently remove the binder in a non-oxidizing atmosphere. Powder production becomes difficult and the firing temperature becomes high, which is not suitable.

On the other hand, the ceramic filler mixed with the borosilicate glass can be selected according to the required material properties. For example, Al ₂ O ₃ , SiO ₂ , ZrO ₂ , 3Al ₂
O ₃ · 2SiO _2, calcium zirconate, include strontium titanate, an average particle diameter of from 0.5 to 3
μm is desirable.

Further, since the glass ceramic porcelain forming the copper wiring conductor is debindered in a non-oxidizing atmosphere such as nitrogen, the organic binder to be used is preferably a methacrylic acid resin or the like which is excellent in thermal decomposability. It is also possible to add a plasticizer according to the properties of the organic binder.

The simultaneous firing of the copper metallized composition of the present invention and the glass ceramic substrate is carried out by decomposing and removing the organic binder, plasticizer, solvent, etc. contained in a nitrogen atmosphere containing water vapor at 300 to 500 ° C. Similarly, the temperature is increased to 700 to 1000 ° C. in a nitrogen atmosphere containing water vapor to remove a small amount of carbon remaining in the glass ceramic substrate by reacting with the water vapor, and the resulting glass ceramic porcelain is densified and crystallized. When the glass is used, the glass is crystallized simultaneously with the densification.

Thus, a glass-ceramic wiring board S as shown in the partial sectional view of FIG. 1 is obtained. In the glass ceramic wiring board S, a large number of via-hole conductors are formed on an insulating base (porcelain base) 1, and in particular, the via-hole conductors of the semiconductor element mounting portion (die attach portion) 3 are dissipated by thermal vias 2 (via-hole conductors) for heat dissipation. It is what it was. In addition, it is possible to obtain a suitable glass ceramic wiring substrate S having almost no unevenness on the surface of the insulating base 2 and having excellent heat dissipation.

The unevenness of the via-hole conductor 2 is shown in FIG.
The evaluation can be made based on the distances a and b from the surface (reference plane L) of the insulating base 2 as shown in FIG. That is, the distance between the largest convex portion of the concave / convex portion of the via hole conductor 2 and the reference plane L is a, and the distance between the deepest concave portion and the reference plane L is b, and 0 ≦ a, b
<A. For example, as shown in FIG.
When an uneven portion is formed at the boundary of 0, 0 <a, 0> b. When a flat portion protruding from the reference plane L is formed as shown in FIG. 2B, 0 <a = b. When the recess is formed at a position higher than the reference plane as shown in FIG.
<A. If a exceeds 5 μm or b becomes − more than −10 μm, the efficiency of heat dissipation from the connected semiconductor element deteriorates, and the electric characteristics of the semiconductor element may not be stable. is there.

Next, the obtained copper wiring conductor on the surface of the insulating substrate is subjected to plating according to the intended use, the base is coated with nickel or copper, and gold is coated thereon to have a copper wiring conductor. A glass ceramic wiring board is obtained.

[0046]

EXAMPLE The copper metallized composition of the present invention and a glass ceramic wiring board using the same were evaluated as follows based on one example.

First, SiO ₂ —Al ₂ O ₃ —RO having a glass transition point (Tg) having a composition shown in Table 1 different from the main component of the copper metallized composition having an average particle size of 5 μm.
The inorganic powder containing: (R alkaline earth metal) -B ₂ O ₃ based glass frit and CaO as a filler, were mixed in proportions shown in Tables 2 to copper powder 100 parts by weight of the main component, to the mixture An organic binder and a solvent were added and kneaded to prepare a copper metallized sample for a paste-like via-hole conductor.

[0048]

[Table 1]

On the other hand, 44% by weight of SiO ₂ and Al ₂ O ₃
There 28 wt%, MgO 11 wt%, ZnO 8% by weight, B ₂ O ₃ is 9% by weight of a crystalline glass powder 61 wt% with the composition, powdered calcium 21 wt% zirconate, strontium titanate powder 16% by weight, Al ₂ O
_{(3) To a} glass ceramic raw material powder composed of 2% by weight of powder, 12% by weight of solid content of isobutyl methacrylate resin as an organic binder and 6% by weight of dibutyl phthalate as a plasticizer, and toluene and ethyl acetate as solvents are added. The mixture was mixed by a ball mill for 40 hours to prepare a slurry.

A glass ceramic green sheet having a thickness of 0.4 mm is formed from the obtained slurry by a doctor blade method, a via hole having a diameter of 0.12 mm is formed in the green sheet, and the copper paste for via hole conductor is filled in the via hole. It was filled, and a pad pattern was printed on the upper surface thereof to produce a molded body in which three sheets were laminated under pressure.

Next, in order to remove organic components such as an organic binder in the molded body and carbon remaining after the organic components are decomposed, in a nitrogen atmosphere containing 55 mmHg of steam at a temperature of 750 ° C. for one hour. After performing the heat treatment for holding, the glass ceramic wiring board for evaluation was manufactured by holding at 900 ° C. for 1 hour.

Using the glass ceramic wiring board for evaluation, the protruding height (μ) was measured by a stylus method using a surface roughness meter so as to cross the via-hole conductor on the surface of the insulating substrate.
m), the resistance of the via-hole conductor penetrating the insulating substrate was measured by a four-terminal method, and the via-hole resistance (m
Ω / mm).

After the semiconductor element is surface-mounted on the via-hole conductor, the semiconductor element is ground and removed, and the ratio of the bonding area to the die attach portion is examined.
Those with less than 90% were determined to be defective, and their suitability for thermal vias was judged from their bonding properties.

Based on the individual evaluations described above, comprehensive evaluation was made, and the evaluation was made in three stages of excellent, good, and bad.

[0055]

[Table 2]

As is clear from Table 2, in Sample Nos. 1, 2, 6, and 7, which are out of the claims of the present invention, the protrusion height of the via hole portion is 7 μm or more, and the bondability as a thermal via is poor. Similarly, in sample numbers 6 and 14, the resistance of the via-hole conductor was as extremely large as 5.5 mΩ / mm or more, and did not satisfy the object of the present invention.

On the other hand, in the wiring board according to the present invention, the protrusion height of the via-hole conductor is 5 μm or less, the resistance is as low as 4.7 mΩ / mm or less, and the wiring board is suitable for a thermal via.

The present invention is not limited to the above-described embodiment.

[0059]

As described in detail above, the copper metallized composition of the present invention and the glass-ceramic wiring board using the same have a glass transition point of 700 to 750 ° C. with respect to 100 parts by weight of the main component copper powder. SiO ₂ -Al ₂ O ₃ -RO
(R: alkaline earth metal) -B 2 to 20 parts by weight ₂ O ₃ based glass frit, an inorganic powder containing CaO components 0.
Since the glass frit contained in the copper metallized composition reacts with the glass ceramic substrate and contains 3 to 5 parts by weight and is produced using the copper metallized composition for via holes that can be co-fired with the glass ceramic porcelain, The shrinkage of the composition is promoted, and the protrusion of the via-hole conductor to the surface of the insulating substrate made of fired glass ceramic porcelain becomes extremely small, so that a glass ceramic wiring board suitable as a thermal via can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view illustrating a glass ceramic wiring board according to the present invention.

FIGS. 2A to 2C are schematic cross-sectional views illustrating a height difference between a via-hole conductor surface and an insulating substrate surface.

[Explanation of symbols]

 1: Insulating substrate (porcelain substrate) 2: Thermal via (via hole conductor) 3: Semiconductor element mounting portion (die attach portion) L: Reference surface (porcelain substrate surface) S: Glass ceramic wiring board

Claims (5)

[Claims] 1. A copper metallizing composition for via holes which can be co-fired with a glass ceramic substrate, wherein the glass transition point is 700 to 7 with respect to 100 parts by weight of a copper powder as a main component.
50 ° C. of _{SiO 2 -Al 2 O 3 -RO:} 2~20 parts by weight of (R alkaline earth metal) -B ₂ O ₃ based glass frit, 0.3 to 5 parts by weight containing an inorganic powder containing CaO components A copper metallized composition, characterized in that: 2. The copper metallized composition according to claim 1, wherein the inorganic powder containing CaO in the copper metallized composition is CaZrO ₃ or CaTiO ₃ . 3. The composition according to claim 1, wherein said SiO ₂ —
Al ₂ O ₃ —RO (R: alkaline earth metal) —B ₂ O ₃
2. The copper metallization according to claim 1, wherein the glass transition point of the system glass frit is 700 to 750 [deg.] C., and the content thereof is 3 to 15 parts by weight with respect to 100 parts by weight of the main component copper powder. Composition. 4. A glass-ceramic wiring board having via-hole conductors formed by simultaneously firing the copper metallized composition according to claim 1 and a glass-ceramic substrate, wherein the ceramic substrate is obtained by firing the glass-ceramic substrate. The height of the via-hole conductor surface relative to the surface is -10 μm to +5 μm
m, a glass ceramic wiring board. 5. The glass-ceramic wiring board according to claim 4, wherein the via-hole conductor forms a thermal via for heat dissipation.