JP2013506980A - 発光ダイオードの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 90
- 230000000873 masking effect Effects 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 25
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
【選択図】 図3
Description
− 窒化アルミニウムからなる核形成層(nucleation layer)2。
− 窒化アルミニウムからなるバッファ層3。この層は、核形成層2よりも高い成長温度(例えば少なくとも1000℃)で堆積させる。
− AlGaN層4。この層内では、アルミニウム濃度が成長方向Rに最大95%から少なくとも15%に段階的に減少する。
− 最初のGaN層5。
− AlN層またはAlGaN層7。この層は、約850℃の低い成長温度で成長させることができる。
− 第2のGaN層8。
− さらなるAlN層またはAlGaN層10。この層は約850℃で成長させることができる。
− 第3のGaN層11。この層の中にマスキング層12が配置される。
− AlN層またはAlGaN層15。
− シリコン表面1aを有するキャリア基板1。
− 核形成層2およびバッファ層3。これらの層それぞれは、例えば窒化アルミニウムからなり、合わせて約200nmの厚さとする。
− GaN層。この層は擬似格子整合的に成長させ、約100nmの厚さを有する。
− 第1のマスキング層12。この層は例えば窒化珪素を使用して形成し、1nm〜2nmの範囲内の厚さを有する。
− さらなるGaN層8。この層は約700nmの厚さを有する。
− 第1のAlN層10。この層は例えば約850℃の温度で成長させることができる。
− 第3のGaN層11。この層は例えば約700nmの厚さを有する。
− さらなるAlN層。この層は約850℃の低い成長温度で成長させることができる。
Claims (15)
- 発光ダイオードの製造方法であって、
− シリコン表面(1a)を有するキャリア基板(1)を形成するステップと、
− 前記シリコン表面(1a)上に、成長方向(R)に積層体(100)を堆積させるステップと、
− 前記積層体(100)上に発光ダイオード構造(16)を堆積させるステップと、
を含んでおり、
− 前記積層体(100)が、窒化ガリウムを使用して形成されるGaN層(5)を含んでおり、
− 前記積層体が、窒化珪素を使用して形成されるマスキング層(12)を含んでおり、
− 前記成長方向(R)において前記GaN層(5)の少なくとも一部分の後ろに、前記マスキング層(12)が続いている、
方法。 - − 前記マスキング層(12)がGaN層の中に配置される、
請求項1に記載の方法。 - − 前記マスキング層(12)が2層のGaN層に直接隣接している、
請求項1または請求項2に記載の方法。 - − 少なくとも2層のGaN層(5,8,11)が、前記成長方向(R)において前記マスキング層(12)より上流に配置される、
請求項1から請求項3のいずれか一項に記載の方法。 - − 前記積層体(100)が少なくとも2層のGaN層(5,8,11)を含んでおり、
− 前記成長方向(R)においてGaN層(5,8,11)それぞれの後ろにAlN層(7,10,15)が続いている、
請求項1から請求項4のいずれか一項に記載の方法。 - − 前記積層体(100)が少なくとも2層のGaN層(5,8,11)を含んでおり、
− 前記成長方向(R)においてGaN層(5,8,11)それぞれの後ろにAlGaN層(7,10,15)が続いている、
請求項1から請求項5のいずれか一項に記載の方法。 - − 前記積層体(100)が少なくとも2層のGaN層(5,8,11)を含んでおり、
− 前記成長方向(R)においてGaN層(5,8,11)それぞれの後ろに、AlGaN層(7,10,15)もしくはAlN層(7,10,15)またはその両方が続いている、
請求項1から請求項6のいずれか一項に記載の方法。 - 前記AlGaN層(7,10,15)の少なくとも1層におけるGaの濃度が、少なくとも5%から最大で10%の範囲内である、
請求項6または請求項7に記載の方法。 - − 前記積層体(100)が少なくとも2層のGaN層(5,8,11)を含んでおり、
− GaN層(5,8,11)それぞれの中にマスキング層(12)が配置されている、
請求項1から請求項8のいずれか一項に記載の方法。 - − 前記シリコン表面(1a)から、前記成長方向(R)における前記第1のマスキング層(12)までの間の前記積層体(100)に、AlGaN層が存在しない、
請求項1から請求項9のいずれか一項に記載の方法。 - − 前記積層体(100)にAlGaN層が存在しない、
請求項1から請求項10のいずれか一項に記載の方法。 - − 前記成長方向(R)においてバッファ層(3)のすぐ後ろにGaN層(5a)が続いている、
請求項1から請求項11のいずれか一項に記載の方法。 - − 前記GaN層(5a)が擬似格子整合GaN層(5a)である、
請求項12に記載の方法。 - − 前記成長方向(R)において、前記第1のマスキング層(12)が、前記擬似格子整合GaN層(5a)とGaN層(8)との間に配置され、前記マスキング層(12)の厚さが、0.5nm〜2.5nmの範囲内である、
請求項13に記載の方法。 - − 前記発光ダイオード構造(16)が前記積層体(100)から剥離される、
請求項1から請求項14のいずれか一項に記載の方法。
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DE102009047881.7 | 2009-09-30 | ||
DE102009047881.7A DE102009047881B4 (de) | 2009-09-30 | 2009-09-30 | Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur |
PCT/EP2010/064353 WO2011039181A1 (de) | 2009-09-30 | 2010-09-28 | Verfahren zur herstellung einer leuchtdiode |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018050075A (ja) * | 2017-12-06 | 2018-03-29 | アルパッド株式会社 | 半導体ウェーハ及び半導体素子 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009047881B4 (de) * | 2009-09-30 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur |
DE102010046792A1 (de) | 2010-09-28 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
KR20120032329A (ko) * | 2010-09-28 | 2012-04-05 | 삼성전자주식회사 | 반도체 소자 |
DE102011114665B4 (de) | 2011-09-30 | 2023-09-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements |
US8946773B2 (en) | 2012-08-09 | 2015-02-03 | Samsung Electronics Co., Ltd. | Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure |
US9136430B2 (en) | 2012-08-09 | 2015-09-15 | Samsung Electronics Co., Ltd. | Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure |
JP5425284B1 (ja) | 2012-09-21 | 2014-02-26 | 株式会社東芝 | 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法 |
KR101464854B1 (ko) | 2013-01-14 | 2014-11-25 | 주식회사 엘지실트론 | 반도체 기판 |
CN105144345B (zh) * | 2013-03-15 | 2018-05-08 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
DE112014002779B8 (de) | 2013-06-11 | 2022-12-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Nitrid-Verbindungshalbleiter-Bauelements |
JP5996489B2 (ja) * | 2013-07-09 | 2016-09-21 | 株式会社東芝 | 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法 |
JP2014063988A (ja) * | 2013-07-23 | 2014-04-10 | Toshiba Corp | 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法 |
KR102098250B1 (ko) | 2013-10-21 | 2020-04-08 | 삼성전자 주식회사 | 반도체 버퍼 구조체, 이를 포함하는 반도체 소자 및 반도체 버퍼 구조체를 이용한 반도체 소자 제조방법 |
DE102014105303A1 (de) | 2014-04-14 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements |
TW201718930A (zh) * | 2015-09-04 | 2017-06-01 | 南洋理工大學 | 具有經減低之線差排密度的基材之製造方法 |
JP6264628B2 (ja) * | 2017-01-13 | 2018-01-24 | アルパッド株式会社 | 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法 |
WO2019123763A1 (ja) * | 2017-12-19 | 2019-06-27 | 株式会社Sumco | Iii族窒化物半導体基板の製造方法 |
DE102018101558A1 (de) | 2018-01-24 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Nitrid-Verbindungshalbleiter-Bauelements |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001148348A (ja) * | 1997-03-13 | 2001-05-29 | Nec Corp | GaN系半導体素子とその製造方法 |
DE10151092A1 (de) * | 2001-10-13 | 2003-05-08 | Armin Dadgar | Verfahren zur Herstellung von planaren und rißfreien Gruppe-III-Nitrid-basierten Lichtemitterstrukturen auf Silizium Substrat |
WO2008042020A2 (en) * | 2006-05-09 | 2008-04-10 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
WO2008132204A2 (de) * | 2007-04-27 | 2008-11-06 | Azzurro Semiconductors Ag | Nitridhalbleiterbauelement-schichtstruktur auf einer gruppe-iv-substratoberfläche |
JP2009527913A (ja) * | 2006-02-23 | 2009-07-30 | アズッロ セミコンダクターズ アクチエンゲゼルシャフト | ニトリド半導体素子ならびにその製法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348096B1 (en) | 1997-03-13 | 2002-02-19 | Nec Corporation | Method for manufacturing group III-V compound semiconductors |
JP3257442B2 (ja) * | 1997-04-09 | 2002-02-18 | 松下電器産業株式会社 | 窒化ガリウム結晶の製造方法 |
JP2008034862A (ja) * | 1997-04-11 | 2008-02-14 | Nichia Chem Ind Ltd | 窒化物半導体の成長方法 |
FR2769924B1 (fr) * | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
WO1999030373A1 (fr) | 1997-12-08 | 1999-06-17 | Mitsubishi Cable Industries, Ltd. | DISPOSITIF LUMINEUX SEMI-CONDUCTEUR A BASE DE GaN ET PROCEDE DE PRODUCTION D'UN CRISTAL A BASE DE GaN |
JP4547746B2 (ja) * | 1999-12-01 | 2010-09-22 | ソニー株式会社 | 窒化物系iii−v族化合物の結晶製造方法 |
US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US6611002B2 (en) | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
JP3866540B2 (ja) * | 2001-07-06 | 2007-01-10 | 株式会社東芝 | 窒化物半導体素子およびその製造方法 |
JP4375972B2 (ja) * | 2003-01-28 | 2009-12-02 | シャープ株式会社 | 窒化物系iii−v族化合物半導体装置の製造方法 |
US6818061B2 (en) | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
JP2005235908A (ja) * | 2004-02-18 | 2005-09-02 | Osaka Gas Co Ltd | 窒化物半導体積層基板及びGaN系化合物半導体装置 |
US7339205B2 (en) * | 2004-06-28 | 2008-03-04 | Nitronex Corporation | Gallium nitride materials and methods associated with the same |
US7687827B2 (en) * | 2004-07-07 | 2010-03-30 | Nitronex Corporation | III-nitride materials including low dislocation densities and methods associated with the same |
JP4571476B2 (ja) * | 2004-10-18 | 2010-10-27 | ローム株式会社 | 半導体装置の製造方法 |
KR100616686B1 (ko) * | 2005-06-10 | 2006-08-28 | 삼성전기주식회사 | 질화물계 반도체 장치의 제조 방법 |
JP4482490B2 (ja) * | 2005-06-13 | 2010-06-16 | 古河機械金属株式会社 | Iii族窒化物半導体基板およびiii族窒化物半導体基板の製造方法 |
US8334155B2 (en) * | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
US20070194342A1 (en) * | 2006-01-12 | 2007-08-23 | Kinzer Daniel M | GaN SEMICONDUCTOR DEVICE AND PROCESS EMPLOYING GaN ON THIN SAPHIRE LAYER ON POLYCRYSTALLINE SILICON CARBIDE |
DE102006008929A1 (de) * | 2006-02-23 | 2007-08-30 | Azzurro Semiconductors Ag | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
US9406505B2 (en) | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
CN101467231B (zh) * | 2006-04-25 | 2012-07-18 | 新加坡国立大学 | 在外延横向过度生长氮化镓模板上生长氧化锌膜的方法 |
WO2009002365A1 (en) | 2006-12-15 | 2008-12-31 | University Of South Carolina | Pulsed selective area lateral epitaxy for growth of iii-nitride materials over non-polar and semi-polar substrates |
US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
US7825432B2 (en) * | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
US20080296616A1 (en) * | 2007-06-04 | 2008-12-04 | Sharp Laboratories Of America, Inc. | Gallium nitride-on-silicon nanoscale patterned interface |
DE102009047881B4 (de) * | 2009-09-30 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur |
-
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-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001148348A (ja) * | 1997-03-13 | 2001-05-29 | Nec Corp | GaN系半導体素子とその製造方法 |
DE10151092A1 (de) * | 2001-10-13 | 2003-05-08 | Armin Dadgar | Verfahren zur Herstellung von planaren und rißfreien Gruppe-III-Nitrid-basierten Lichtemitterstrukturen auf Silizium Substrat |
JP2009527913A (ja) * | 2006-02-23 | 2009-07-30 | アズッロ セミコンダクターズ アクチエンゲゼルシャフト | ニトリド半導体素子ならびにその製法 |
WO2008042020A2 (en) * | 2006-05-09 | 2008-04-10 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
WO2008132204A2 (de) * | 2007-04-27 | 2008-11-06 | Azzurro Semiconductors Ag | Nitridhalbleiterbauelement-schichtstruktur auf einer gruppe-iv-substratoberfläche |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018050075A (ja) * | 2017-12-06 | 2018-03-29 | アルパッド株式会社 | 半導体ウェーハ及び半導体素子 |
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DE102009047881A1 (de) | 2011-04-21 |
CN105551932A (zh) | 2016-05-04 |
WO2011039181A1 (de) | 2011-04-07 |
EP2483914B1 (de) | 2017-09-06 |
JP5748758B2 (ja) | 2015-07-15 |
CN105551932B (zh) | 2019-04-09 |
DE102009047881B4 (de) | 2022-03-03 |
US20140329350A1 (en) | 2014-11-06 |
KR20120081177A (ko) | 2012-07-18 |
EP2483914A1 (de) | 2012-08-08 |
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JP6463813B2 (ja) | 2019-02-06 |
JP6216349B2 (ja) | 2017-10-18 |
US9184337B2 (en) | 2015-11-10 |
US8828768B2 (en) | 2014-09-09 |
JP2018022909A (ja) | 2018-02-08 |
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