JP2013545312A - オプトエレクトロニクス半導体チップの製造方法およびそのような半導体チップ - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 180
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 133
- 238000000034 method Methods 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 230000005855 radiation Effects 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000010899 nucleation Methods 0.000 claims description 24
- 230000006911 nucleation Effects 0.000 claims description 24
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 126
- 239000013078 crystal Substances 0.000 description 14
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- 230000007547 defect Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 3
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- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
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- 239000000284 extract Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 230000000704 physical effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
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Abstract
【選択図】図3
Description
− シリコン表面を有する成長基板を準備するステップと、
− 成長基板上に、圧縮歪みが緩和された(compressively relaxed)バッファ積層体を配置するステップと、
− バッファ積層体の上に半導体積層体をメタモルフィック方式でエピタキシャル成長させる(metamorphic, epitaxial growth)ステップであって、半導体積層体が、放射を生成する目的で設けられる活性層を有する、ステップと、
を含んでいる。
− 成長基板とは反対側の半導体積層体の面に、キャリア基板を貼り付けるステップと、
− 成長基板を剥離するステップと、
を含んでいる。
Claims (15)
- AlInGaP材料系をベースとする半導体積層体(1)を有するオプトエレクトロニクス半導体チップ(10)を製造する方法であって、以下の方法ステップ、すなわち、
− シリコン表面を有する成長基板(2)を準備するステップと、
− 前記成長基板(2)の上に、圧縮歪みが緩和されたバッファ積層体(3)を配置するステップと、
− 前記バッファ積層体(3)の上に、放射を生成する目的で設けられる活性層を有する前記半導体積層体(1)をメタモルフィック方式でエピタキシャル成長させるステップと、
を含んでいる、方法。 - 前記バッファ積層体(3)を配置する前に、前記成長基板(2)にシュードモルフィック中間層(4)が形成され、次いで、前記中間層(4)に前記バッファ積層体(3)が形成される、
請求項1に記載の方法。 - 前記中間層(4)を形成する前に、前記成長基板(2)に核形成層(5)が形成され、次いで、前記核形成層(5)に前記中間層(4)が形成される、
請求項2に記載の方法。 - 前記バッファ積層体(3)の格子定数が、前記半導体積層体(1)に向かう方向に徐々に増大するように配置される、
請求項1から請求項3のいずれかに記載の方法。 - 前記バッファ積層体(3)の格子定数が、インジウムおよびヒ素の少なくとも一方を添加することによって増大する、
請求項4に記載の方法。 - 前記バッファ積層体(3)が複数のバッファ層から形成され、前記複数のバッファ層の格子定数が、前記半導体積層体(1)に向かう方向に層ごとに増大するように配置される、
請求項4または請求項5に記載の方法。 - 以下のさらなる方法ステップ、すなわち、
− 前記成長基板(2)とは反対側の前記半導体積層体(1)の面に、キャリア基板(6)を貼り付けるステップと、
− 前記成長基板(2)を剥離するステップと、
を含んでいる、
請求項1から請求項6のいずれかに記載の方法。 - 前記キャリア基板(6)と前記半導体積層体(1)との間にミラー層(7)が配置される、
請求項7に記載の方法。 - 前記成長基板(2)、前記核形成層(5)、前記中間層(4)のうちの少なくとも1つが、前記キャリア基板(6)とは反対側の前記半導体チップ(10)の面に放射取り出し構造(8)が形成されるように、剥離される
請求項7または請求項8に記載の方法。 - 共通の工程において、共通の成長基板(2)の上に複数の前記半導体チップ(10)が製造される、
請求項1から請求項9のいずれかに記載の方法。 - 請求項1から請求項10のいずれかの方法に従って製造される半導体チップであって、キャリア基板(6)と、AlInGaP材料系をベースとする半導体積層体(1)とを有する、半導体チップ。
- 前記キャリア基板(6)と前記半導体積層体(1)との間にミラー層(7)が配置されている、
請求項11に記載の半導体チップ。 - 前記キャリア基板(6)とは反対側の前記半導体積層体(1)の面に、AlInGaAsPを含んだバッファ積層体(3)が配置されており、前記バッファ積層体(3)の格子定数が、前記半導体積層体(1)の側の面において、前記半導体積層体(1)の格子定数に整合している、
請求項11または請求項12に記載の半導体チップ。 - 前記半導体積層体(1)とは反対側の前記バッファ積層体(3)の面に、AlInGaAsPを含んだ中間層(4)が配置されている、
請求項13に記載の半導体チップ。 - 前記中間層(4)および前記バッファ積層体(3)の少なくとも一方が、構造化部(8)を有する、
請求項14に記載の半導体チップ。
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DE102010052727.0 | 2010-11-26 | ||
DE102010052727.0A DE102010052727B4 (de) | 2010-11-26 | 2010-11-26 | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und derartiger Halbleiterchip |
PCT/EP2011/068476 WO2012069262A1 (de) | 2010-11-26 | 2011-10-21 | Verfahren zum herstellen eines optoelektronischen halbleiterchips und derartiger halbleiterchip |
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EP (1) | EP2643859A1 (ja) |
JP (1) | JP2013545312A (ja) |
KR (1) | KR101470780B1 (ja) |
CN (1) | CN103222072B (ja) |
DE (1) | DE102010052727B4 (ja) |
TW (1) | TWI523264B (ja) |
WO (1) | WO2012069262A1 (ja) |
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US9104896B2 (en) | 2012-06-04 | 2015-08-11 | Apple Inc. | System and method for remotely initiating lost mode on a computing device |
TWI790928B (zh) * | 2019-05-24 | 2023-01-21 | 晶元光電股份有限公司 | 半導體元件 |
US11721954B2 (en) | 2019-07-19 | 2023-08-08 | Visual Photonics Epitaxy Co., Ltd. | Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain |
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2011
- 2011-10-21 WO PCT/EP2011/068476 patent/WO2012069262A1/de active Application Filing
- 2011-10-21 CN CN201180056609.5A patent/CN103222072B/zh active Active
- 2011-10-21 KR KR1020137015964A patent/KR101470780B1/ko active IP Right Grant
- 2011-10-21 US US13/883,782 patent/US9093604B2/en active Active
- 2011-10-21 EP EP11773460.8A patent/EP2643859A1/de not_active Withdrawn
- 2011-10-21 JP JP2013540282A patent/JP2013545312A/ja active Pending
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JPS621293A (ja) * | 1985-06-26 | 1987-01-07 | Sharp Corp | 半導体発光素子 |
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Also Published As
Publication number | Publication date |
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DE102010052727B4 (de) | 2019-01-31 |
CN103222072B (zh) | 2016-06-08 |
TWI523264B (zh) | 2016-02-21 |
CN103222072A (zh) | 2013-07-24 |
US9093604B2 (en) | 2015-07-28 |
US20130328101A1 (en) | 2013-12-12 |
KR101470780B1 (ko) | 2014-12-08 |
DE102010052727A1 (de) | 2012-05-31 |
WO2012069262A1 (de) | 2012-05-31 |
KR20130098407A (ko) | 2013-09-04 |
EP2643859A1 (de) | 2013-10-02 |
TW201232817A (en) | 2012-08-01 |
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