JP2014528178A - オプトエレクトロニクス半導体チップの製造方法および対応するオプトエレクトロニクス半導体チップ - Google Patents
オプトエレクトロニクス半導体チップの製造方法および対応するオプトエレクトロニクス半導体チップ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 58
- 238000004544 sputter deposition Methods 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 5
- 230000004927 fusion Effects 0.000 claims description 18
- 230000000873 masking effect Effects 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims 2
- 238000007788 roughening Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 239
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006253 efflorescence Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Abstract
Description
− シリコン成長基板を形成するステップと、
− 成長基板の上にスパッタリングによってIII族窒化物バッファ層を形成するステップと、
− バッファ層の上または上方に、活性層を有するIII族窒化物半導体積層体を成長させるステップと、
を、好ましくは記載した順序において含んでいる。
本特許出願は、独国特許出願第102011114670.2号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (13)
- オプトエレクトロニクス半導体チップ(10)を製造する方法であって、
− シリコン成長基板(1)を形成するステップと、
− 前記成長基板(1)の上にIII族窒化物バッファ層(3)をスパッタリングによって形成するステップと、
− 前記バッファ層(3)の上に、活性層(2a)を有するIII族窒化物半導体積層体(2)を成長させるステップと、
を含んでいる、方法。 - 前記バッファ層(3)が、AlN系であり、前記成長基板(1)に直接堆積される、
請求項1に記載の方法。 - 前記バッファ層(3)に酸素が混合され、前記酸素の重量割合が0.1%〜10%の範囲内(両端値を含む)である、
請求項2に記載の方法。 - 前記バッファ層(3)における酸素の割合が、前記成長基板(1)から離れる方向に単調に減少する、
請求項3に記載の方法。 - 前記バッファ層(3)が、10nm〜1000nmの範囲内(両端値を含む)の厚さ、特に、50nm〜200nmの範囲内(両端値を含む)の厚さを有する、
請求項1から請求項4のいずれかに記載の方法。 - 前記バッファ層(3)の上に、スパッタリングによって、または気相成長法によって、中間層(4)が直接堆積され、
前記中間層(4)がAlGaN系であり、前記中間層(4)におけるAl含有量が、前記成長基板(1)から離れる方向に単調に減少する、
請求項1から請求項5のいずれかに記載の方法。 - 前記中間層(4)の上に、以下の層、すなわち、
− GaN系であり、スパッタリングまたは気相成長法によって形成される成長層(8)と、
− SiN系であるマスキング層(6)であって、50%〜90%の範囲内(両端値を含む)の被覆率で前記成長層(8)を覆い、スパッタリングまたは気相成長法によって形成される、マスキング層(6)と、
− GaN系であり、気相成長法によって成長させる融合層(7)と、
− AlGaNもしくはAlNまたはその両方から構成されている1層または複数層の中央層(9)であって、複数層の中央層(9)の場合、2層の隣接する中央層(9)の間にそれぞれのGaN層(5)を気相成長法によって成長させる、1層または複数層の中央層(9)と、
− AlInGaN系であり、気相成長法によって成長させる半導体積層体(2a,2b,2c)と、
が、それぞれの下層の上に直接的に、示した順序において形成される、
請求項6に記載の方法。 - 前記スパッタリングが、550℃〜900℃の範囲内(両端値を含む)の温度において、1×10−3mbar〜1×10−2mbarの範囲内(両端値を含む)の圧力において、行われる、
請求項1から請求項7のいずれかに記載の方法。 - スパッタリング時の成長速度が、0.03nm/s〜0.5nm/sの範囲内(両端値を含む)に設定され、前記スパッタリングが、ArおよびN2を含んだ雰囲気下で行われ、Ar:N2の比が1:2であり、この場合の公差が最大で15%である、
請求項1から請求項8のいずれかに記載の方法。 - 前記成長基板(1)とは反対側の前記半導体積層体(2)の面にキャリア基板(11)が取り付けられ、その後に前記成長基板(1)が除去される、
請求項1から請求項9のいずれかに記載の方法。 - 前記バッファ層(3)がスパッタリング堆積装置(A)の中で形成され、前記半導体積層体(2)が、前記スパッタリング堆積装置(A)とは異なる気相成長炉(B)の中で成長し、
前記スパッタリング堆積装置(A)にガリウムが存在しない、
請求項1から請求項10のいずれかに記載の方法。 - 放射を生成する目的で設けられている活性層(2a)と少なくとも1層のn型ドープ層(2b)とを有する半導体積層体(2)を備えたオプトエレクトロニクス半導体チップ(10)であって、
− 前記n型ドープ層(2b)が前記活性層(2a)に隣接しており、
− 前記半導体積層体(2)がAlInGaN系であり、
− キャリア基板(11)とは反対側の前記n型ドープ層(2b)の面に、AlGaNから構成されており、かつ5nm〜50nmの範囲内(両端値を含む)の厚さを有する少なくとも1層の中央層(9)が成長しており、
− キャリア基板(11)とは反対側の前記中央層(9)の面、または複数の前記中央層(9)のうちの1つの中央層の面に、ドープされたGaNまたはドープされていないGaNから構成された、300nm〜1.2μmの範囲内(両端値を含む)の厚さを有する融合層(7)が形成されており、
− 粗面化部(13)が、前記融合層(7)から前記n型ドープ層(2b)まで、または前記n型ドープ層(2b)の中まで達しており、
− 前記半導体積層体(2)の放射出口領域が、部分的に前記融合層(7)によって形成されており、
− 前記中央層(9)が部分的に露出している、
オプトエレクトロニクス半導体チップ(10)。 - 請求項1から請求項11のいずれかに記載の方法によって製造される、
請求項12に記載のオプトエレクトロニクス半導体チップ(10)。
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DE102011114670.2 | 2011-09-30 | ||
DE102011114670A DE102011114670A1 (de) | 2011-09-30 | 2011-09-30 | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
PCT/EP2012/066699 WO2013045190A1 (de) | 2011-09-30 | 2012-08-28 | Verfahren zur herstellung eines optoelektronischen halbleiterchips und entsprechender optoelektronischer halbleiterchip |
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US (1) | US20140342484A1 (ja) |
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KR (1) | KR20140069036A (ja) |
CN (1) | CN103843160A (ja) |
DE (1) | DE102011114670A1 (ja) |
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DE102011015821B4 (de) * | 2011-04-01 | 2023-04-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
DE102012107001A1 (de) | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE102014105303A1 (de) | 2014-04-14 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements |
DE102015116495A1 (de) * | 2015-09-29 | 2017-03-30 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zum Herstellen eines optoelektronischen Halbleiterchips |
JP6786307B2 (ja) * | 2016-08-29 | 2020-11-18 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
CN114651084B (zh) * | 2019-10-31 | 2024-08-06 | 东曹株式会社 | 层叠膜结构体和其制造方法 |
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US5741724A (en) * | 1996-12-27 | 1998-04-21 | Motorola | Method of growing gallium nitride on a spinel substrate |
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JP3994623B2 (ja) * | 2000-04-21 | 2007-10-24 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子の製造方法 |
DE10034263B4 (de) | 2000-07-14 | 2008-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Quasisubstrats |
JP3509709B2 (ja) * | 2000-07-19 | 2004-03-22 | 株式会社村田製作所 | 圧電薄膜共振子及び圧電薄膜共振子の製造方法 |
CN102064091B (zh) * | 2006-02-23 | 2013-03-20 | 阿祖罗半导体股份公司 | 氮化物半导体部件及其制造工艺 |
DE102006008929A1 (de) * | 2006-02-23 | 2007-08-30 | Azzurro Semiconductors Ag | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
KR100756841B1 (ko) * | 2006-03-13 | 2007-09-07 | 서울옵토디바이스주식회사 | AlxGa1-xN 버퍼층을 갖는 발광 다이오드 및 이의제조 방법 |
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WO2008020599A1 (en) * | 2006-08-18 | 2008-02-21 | Showa Denko K.K. | Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp |
US7825432B2 (en) * | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
DE102007022947B4 (de) | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
WO2008136504A1 (ja) * | 2007-05-02 | 2008-11-13 | Showa Denko K.K. | Iii族窒化物半導体発光素子の製造方法 |
US20100176369A2 (en) * | 2008-04-15 | 2010-07-15 | Mark Oliver | Metalized Silicon Substrate for Indium Gallium Nitride Light-Emitting Diodes |
JP2009283785A (ja) * | 2008-05-23 | 2009-12-03 | Showa Denko Kk | Iii族窒化物半導体積層構造体およびその製造方法 |
EP2498293B1 (en) * | 2009-11-06 | 2018-08-01 | NGK Insulators, Ltd. | Epitaxial substrate for semiconductor element and method for producing epitaxial substrate for semiconductor element |
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- 2012-08-28 US US14/344,825 patent/US20140342484A1/en not_active Abandoned
- 2012-08-28 WO PCT/EP2012/066699 patent/WO2013045190A1/de active Application Filing
- 2012-08-28 JP JP2014532297A patent/JP2014528178A/ja active Pending
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WO1999038218A1 (fr) * | 1998-01-21 | 1999-07-29 | Rohm Co., Ltd. | Element luminescent a semiconducteur et procede de fabrication |
WO2011108422A1 (ja) * | 2010-03-01 | 2011-09-09 | シャープ株式会社 | 窒化物半導体素子の製造方法、窒化物半導体発光素子および発光装置 |
JP2011082570A (ja) * | 2011-01-11 | 2011-04-21 | Showa Denko Kk | Iii族窒化物半導体発光素子の製造方法 |
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US20140342484A1 (en) | 2014-11-20 |
TW201318209A (zh) | 2013-05-01 |
WO2013045190A1 (de) | 2013-04-04 |
DE102011114670A1 (de) | 2013-04-04 |
TWI497762B (zh) | 2015-08-21 |
CN103843160A (zh) | 2014-06-04 |
KR20140069036A (ko) | 2014-06-09 |
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