DE112014002779B8 - Verfahren zur Herstellung eines Nitrid-Verbindungshalbleiter-Bauelements - Google Patents

Verfahren zur Herstellung eines Nitrid-Verbindungshalbleiter-Bauelements Download PDF

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Publication number
DE112014002779B8
DE112014002779B8 DE112014002779.0T DE112014002779T DE112014002779B8 DE 112014002779 B8 DE112014002779 B8 DE 112014002779B8 DE 112014002779 T DE112014002779 T DE 112014002779T DE 112014002779 B8 DE112014002779 B8 DE 112014002779B8
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manufacturing
semiconductor device
compound semiconductor
nitride compound
nitride
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DE112014002779.0T
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DE112014002779B4 (de
DE112014002779A5 (de
Inventor
Werner Bergbauer
Philipp Drechsel
Peter Stauss
Patrick Rode
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
DE112014002779.0T 2013-06-11 2014-05-28 Verfahren zur Herstellung eines Nitrid-Verbindungshalbleiter-Bauelements Active DE112014002779B8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013106044 2013-06-11
DE102013106044.7 2013-06-11
PCT/EP2014/061139 WO2014198550A1 (de) 2013-06-11 2014-05-28 Verfahren zur herstellung eines nitridverbindungshalbleiter-bauelements

Publications (3)

Publication Number Publication Date
DE112014002779A5 DE112014002779A5 (de) 2016-02-25
DE112014002779B4 DE112014002779B4 (de) 2022-09-22
DE112014002779B8 true DE112014002779B8 (de) 2022-12-15

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Country Status (5)

Country Link
US (1) US9660137B2 (de)
JP (1) JP6138359B2 (de)
CN (1) CN105308720B (de)
DE (1) DE112014002779B8 (de)
WO (1) WO2014198550A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017104370A1 (de) 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper
JP7205474B2 (ja) * 2017-08-14 2023-01-17 ソニーグループ株式会社 テンプレート基板、電子デバイス，発光デバイス，テンプレート基板の製造方法および電子デバイスの製造方法
KR20190079787A (ko) * 2017-12-28 2019-07-08 삼성전자주식회사 반도체 발광소자의 제조 방법
DE102018119634A1 (de) * 2018-08-13 2020-02-13 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines halbleiterbauelements und werkstück

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10056475A1 (de) 2000-11-15 2002-05-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis mit verbesserter p-Leitfähigkeit und Verfahren zu dessen Herstellung
US7655962B2 (en) 2007-02-23 2010-02-02 Sensor Electronic Technology, Inc. Enhancement mode insulated gate heterostructure field-effect transistor with electrically isolated RF-enhanced source contact
US20100289067A1 (en) 2009-05-14 2010-11-18 Transphorm Inc. High Voltage III-Nitride Semiconductor Devices
DE102010035489A1 (de) 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelement

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179452A (ja) 2002-11-28 2004-06-24 Shin Etsu Handotai Co Ltd ヘテロエピタキシャルウエーハ
KR100585919B1 (ko) * 2004-01-15 2006-06-01 학교법인 포항공과대학교 질화갈륨계 ⅲ­ⅴ족 화합물 반도체 소자 및 그 제조방법
DE102006008929A1 (de) 2006-02-23 2007-08-30 Azzurro Semiconductors Ag Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung
KR100756841B1 (ko) * 2006-03-13 2007-09-07 서울옵토디바이스주식회사 ＡｌｘＧａ１－ｘＮ 버퍼층을 갖는 발광 다이오드 및 이의제조 방법
JP4592742B2 (ja) * 2007-12-27 2010-12-08 Ｄｏｗａエレクトロニクス株式会社 半導体材料、半導体材料の製造方法及び半導体素子
US8227791B2 (en) 2009-01-23 2012-07-24 Invenlux Limited Strain balanced light emitting devices
DE102009047881B4 (de) 2009-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur
JP5859423B2 (ja) * 2010-03-02 2016-02-10 Jx日鉱日石金属株式会社 半導体エピタキシャル基板及び半導体センサ用基板の製造方法
KR20110120019A (ko) * 2010-04-28 2011-11-03 삼성전자주식회사 반도체 소자
JP5742072B2 (ja) * 2010-10-06 2015-07-01 住友電気工業株式会社 半導体装置およびその製造方法
JP5672926B2 (ja) * 2010-10-08 2015-02-18 富士通株式会社 化合物半導体装置及びその製造方法
JP5781292B2 (ja) * 2010-11-16 2015-09-16 ローム株式会社 窒化物半導体素子および窒化物半導体パッケージ
US9012939B2 (en) * 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
JP5127978B1 (ja) * 2011-09-08 2013-01-23 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
DE102011114665B4 (de) * 2011-09-30 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements
US20130140525A1 (en) * 2011-12-01 2013-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Gallium nitride growth method on silicon substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10056475A1 (de) 2000-11-15 2002-05-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis mit verbesserter p-Leitfähigkeit und Verfahren zu dessen Herstellung
US7655962B2 (en) 2007-02-23 2010-02-02 Sensor Electronic Technology, Inc. Enhancement mode insulated gate heterostructure field-effect transistor with electrically isolated RF-enhanced source contact
US20100289067A1 (en) 2009-05-14 2010-11-18 Transphorm Inc. High Voltage III-Nitride Semiconductor Devices
DE102010035489A1 (de) 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelement

Also Published As

Publication number Publication date
WO2014198550A1 (de) 2014-12-18
CN105308720B (zh) 2017-10-20
CN105308720A (zh) 2016-02-03
DE112014002779B4 (de) 2022-09-22
JP2016530700A (ja) 2016-09-29
DE112014002779A5 (de) 2016-02-25
JP6138359B2 (ja) 2017-05-31
US9660137B2 (en) 2017-05-23
US20160093765A1 (en) 2016-03-31

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