JP2013225595A - リードフレーム及び半導体パッケージ並びにそれらの製造方法 - Google Patents

リードフレーム及び半導体パッケージ並びにそれらの製造方法 Download PDF

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Publication number
JP2013225595A
JP2013225595A JP2012097053A JP2012097053A JP2013225595A JP 2013225595 A JP2013225595 A JP 2013225595A JP 2012097053 A JP2012097053 A JP 2012097053A JP 2012097053 A JP2012097053 A JP 2012097053A JP 2013225595 A JP2013225595 A JP 2013225595A
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JP
Japan
Prior art keywords
terminal
lead frame
semiconductor package
groove
hole
Prior art date
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Pending
Application number
JP2012097053A
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English (en)
Japanese (ja)
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JP2013225595A5 (https=
Inventor
Yukiharu Takeuchi
之治 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2012097053A priority Critical patent/JP2013225595A/ja
Priority to US13/855,840 priority patent/US8853841B2/en
Priority to TW102112628A priority patent/TW201405723A/zh
Priority to KR1020130041515A priority patent/KR20130118781A/ko
Priority to CN201310133137XA priority patent/CN103378045A/zh
Publication of JP2013225595A publication Critical patent/JP2013225595A/ja
Publication of JP2013225595A5 publication Critical patent/JP2013225595A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/458—Materials of insulating layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2012097053A 2012-04-20 2012-04-20 リードフレーム及び半導体パッケージ並びにそれらの製造方法 Pending JP2013225595A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012097053A JP2013225595A (ja) 2012-04-20 2012-04-20 リードフレーム及び半導体パッケージ並びにそれらの製造方法
US13/855,840 US8853841B2 (en) 2012-04-20 2013-04-03 Lead frame which includes terminal portion having through groove covered by lid portion, semiconductor package, and manufacturing method of the same
TW102112628A TW201405723A (zh) 2012-04-20 2013-04-10 引線框、半導體封裝以及該等裝置之製造方法
KR1020130041515A KR20130118781A (ko) 2012-04-20 2013-04-16 리드 프레임, 반도체 패키지, 및 그 제조 방법
CN201310133137XA CN103378045A (zh) 2012-04-20 2013-04-17 引线框架、半导体封装件及它们的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012097053A JP2013225595A (ja) 2012-04-20 2012-04-20 リードフレーム及び半導体パッケージ並びにそれらの製造方法

Publications (2)

Publication Number Publication Date
JP2013225595A true JP2013225595A (ja) 2013-10-31
JP2013225595A5 JP2013225595A5 (https=) 2015-04-30

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JP2012097053A Pending JP2013225595A (ja) 2012-04-20 2012-04-20 リードフレーム及び半導体パッケージ並びにそれらの製造方法

Country Status (5)

Country Link
US (1) US8853841B2 (https=)
JP (1) JP2013225595A (https=)
KR (1) KR20130118781A (https=)
CN (1) CN103378045A (https=)
TW (1) TW201405723A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072257A (ja) * 2014-09-26 2016-05-09 三菱電機株式会社 半導体装置
CN111987002A (zh) * 2020-09-04 2020-11-24 长电科技（滁州）有限公司 一种封装体成型方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014188632A1 (ja) * 2013-05-23 2014-11-27 パナソニック株式会社 放熱構造を有する半導体装置および半導体装置の積層体
US20160172275A1 (en) * 2014-12-10 2016-06-16 Stmicroelectronics S.R.L. Package for a surface-mount semiconductor device and manufacturing method thereof
JP6840466B2 (ja) * 2016-03-08 2021-03-10 株式会社アムコー・テクノロジー・ジャパン 半導体パッケージ及び半導体パッケージの製造方法
JP6603169B2 (ja) * 2016-04-22 2019-11-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US10153424B2 (en) * 2016-08-22 2018-12-11 Rohm Co., Ltd. Semiconductor device and mounting structure of semiconductor device
JP6800745B2 (ja) * 2016-12-28 2020-12-16 株式会社ディスコ 半導体パッケージの製造方法
JP6850202B2 (ja) * 2017-06-02 2021-03-31 株式会社三井ハイテック リードフレーム、リードフレームの製造方法および半導体装置の製造方法
JP7037368B2 (ja) * 2018-01-09 2022-03-16 ローム株式会社 半導体装置および半導体装置の製造方法
EP3736857A1 (en) 2019-05-07 2020-11-11 Nexperia B.V. Through hole side wettable flank
CN112652583A (zh) * 2019-10-10 2021-04-13 珠海格力电器股份有限公司 一种封装器件及其生产方法
CN111106089B (zh) * 2019-11-29 2021-08-17 青岛歌尔微电子研究院有限公司 高密度管脚qfn的封装结构与方法
IT202100005759A1 (it) * 2021-03-11 2022-09-11 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
CN115083923A (zh) * 2021-03-11 2022-09-20 意法半导体股份有限公司 制造半导体器件的方法和相应的半导体器件
KR102514564B1 (ko) * 2021-06-28 2023-03-29 해성디에스 주식회사 홈이 형성된 리드를 포함하는 리드 프레임
JP7614985B2 (ja) * 2021-09-08 2025-01-16 Ｔｏｗａ株式会社 半導体装置の製造方法およびリードフレーム
TWI897650B (zh) * 2024-09-26 2025-09-11 強茂股份有限公司 孔壁形成側面可潤濕結構的封裝元件

Citations (4)

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JP2002270627A (ja) * 2001-03-13 2002-09-20 New Japan Radio Co Ltd 半導体装置の製造方法
JP2004319996A (ja) * 2003-04-02 2004-11-11 Yamaha Corp 半導体パッケージ、その製造方法、および、これに使用するリードフレーム
JP2006019465A (ja) * 2004-07-01 2006-01-19 Mitsui Chemicals Inc 半導体パッケージおよびその製造方法
US20110108965A1 (en) * 2009-11-12 2011-05-12 Hess Kevin J Semiconductor device package

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JP2004019465A (ja) * 2002-06-12 2004-01-22 Fuji Heavy Ind Ltd エンジンの圧縮圧力診断装置
WO2004082019A1 (ja) * 2003-03-11 2004-09-23 The Furukawa Electric Co. Ltd. プリント配線基板、その製造方法、リードフレームパッケージおよび光モジュール
US7195953B2 (en) * 2003-04-02 2007-03-27 Yamaha Corporation Method of manufacturing a semiconductor package using a lead frame having through holes or hollows therein
JP5546363B2 (ja) * 2010-06-11 2014-07-09 ローム株式会社 半導体装置および半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270627A (ja) * 2001-03-13 2002-09-20 New Japan Radio Co Ltd 半導体装置の製造方法
JP2004319996A (ja) * 2003-04-02 2004-11-11 Yamaha Corp 半導体パッケージ、その製造方法、および、これに使用するリードフレーム
JP2006019465A (ja) * 2004-07-01 2006-01-19 Mitsui Chemicals Inc 半導体パッケージおよびその製造方法
US20110108965A1 (en) * 2009-11-12 2011-05-12 Hess Kevin J Semiconductor device package

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072257A (ja) * 2014-09-26 2016-05-09 三菱電機株式会社 半導体装置
CN111987002A (zh) * 2020-09-04 2020-11-24 长电科技（滁州）有限公司 一种封装体成型方法

Also Published As

Publication number Publication date
US8853841B2 (en) 2014-10-07
TW201405723A (zh) 2014-02-01
US20130277817A1 (en) 2013-10-24
KR20130118781A (ko) 2013-10-30
CN103378045A (zh) 2013-10-30

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