JP2013164808A - 基準電圧発生装置 - Google Patents
基準電圧発生装置 Download PDFInfo
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- JP2013164808A JP2013164808A JP2012028733A JP2012028733A JP2013164808A JP 2013164808 A JP2013164808 A JP 2013164808A JP 2012028733 A JP2012028733 A JP 2012028733A JP 2012028733 A JP2012028733 A JP 2012028733A JP 2013164808 A JP2013164808 A JP 2013164808A
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- 239000012535 impurity Substances 0.000 claims description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052785 arsenic Inorganic materials 0.000 claims description 14
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 108091006146 Channels Proteins 0.000 description 42
- 239000000758 substrate Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/02—Input arrangements using manually operated switches, e.g. using keyboards or dials
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
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- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Automation & Control Theory (AREA)
- Radar, Positioning & Navigation (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】電流源として機能するよう接続され、定電流を流す第一導電型のデプレション型MOSトランジスタ10と、ダイオード接続され、デプレション型MOSトランジスタ10の移動度と略等しい移動度を有し、定電流に基づいて基準電圧VREFを発生させる第一導電型のエンハンスメント型MOSトランジスタ20と、を備える。デプレション型NMOSトランジスタ10とエンハンスメント型NMOSトランジスタ20との移動度が略等しいので、これらの温度特性も略等しくなり、基準電圧VREFの温度特性が平坦となる。
【選択図】図1
Description
電流源として機能するよう接続されたデプレション型NMOSトランジスタ(D型NMOSトランジスタ)10は、ダイオード接続されたエンハンスメント型NMOSトランジスタ(E型NMOSトランジスタ)20に定電流を流し込む。この定電流により、E型NMOSトランジスタ20に、それぞれのトランジスタの閾値およびサイズに応じた基準電圧が発生する。ここで、D型NMOSトランジスタ10のゲートには、N型の不純物がドープされ、E型NMOSトランジスタのゲートには、P型の不純物がドープされている(例えば、特許文献1参照)。
まず、基準電圧発生装置の基本となる構成について図1に示される断面図を用いて説明する。
なお、基板29は、P型に限るものではなくN型でも良い。
なおここでは、D型NMOSトランジスタ10のチャネルドープ領域13は、ウェル16の表面の極性が反転する程度にチャネルドープされるとする。その場合、チャネルドープ領域13とウェル16との不純物の極性は異なり、D型NMOSトランジスタ10は、埋め込みチャネルとなっている。一方、E型NMOSトランジスタ20は、閾値を下げるためにウェル26と極性の異なるN型の不純物を含むチャネルドープ領域23をウェル領域表面に有するために、同じく埋め込みチャネルとなっていると考えられる。
以上に説明した実施形態は、適宜組み合わすことが可能である。
20 エンハンスメント型NMOSトランジスタ(E型NMOSトランジスタ)
11、21 ゲート電極
12、22 ゲート絶縁膜
13、23 チャネルドープ領域
14、24 ソース
15、25 ドレイン
16、26 ウェル
29 基板
Claims (6)
- 定電流を流す第一導電型のデプレション型MOSトランジスタと、
ダイオード接続され、前記デプレション型MOSトランジスタの移動度と等しい移動度を有し、前記定電流に基づく基準電圧を発生させる第一導電型のエンハンスメント型MOSトランジスタと、
を備えることを特徴とする基準電圧発生装置。 - 前記エンハンスメント型MOSトランジスタのゲート酸化膜の誘電率は、前記デプレション型MOSトランジスタのゲート酸化膜の誘電率よりも高い請求項1記載の基準電圧発生装置。
- 前記エンハンスメント型MOSトランジスタのゲート酸化膜は、前記デプレション型MOSトランジスタのゲート酸化膜よりも薄い請求項1記載の基準電圧発生装置。
- 前記エンハンスメント型MOSトランジスタのチャネルドープ領域の主な不純物の原子半径は、前記デプレション型MOSトランジスタのチャネルドープ領域の主な不純物の原子半径よりも小さい請求項1記載の基準電圧発生装置。
- 前記エンハンスメント型MOSトランジスタのチャネルドープ領域の主な不純物はリンであり、
前記デプレション型MOSトランジスタのチャネルドープ領域の主な不純物はヒ素である請求項4記載の基準電圧発生装置。 - 前記エンハンスメント型MOSトランジスタのウェルの不純物濃度は、前記デプレション型MOSトランジスタのウェルの不純物濃度よりも薄い請求項1記載の基準電圧発生装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012028733A JP5959220B2 (ja) | 2012-02-13 | 2012-02-13 | 基準電圧発生装置 |
TW102101631A TWI550771B (zh) | 2012-02-13 | 2013-01-16 | Reference voltage generating device |
US13/755,545 US9213415B2 (en) | 2012-02-13 | 2013-01-31 | Reference voltage generator |
KR1020130012954A KR102030982B1 (ko) | 2012-02-13 | 2013-02-05 | 기준 전압 발생 장치 |
CN201310050845.7A CN103246309B (zh) | 2012-02-13 | 2013-02-08 | 基准电压产生装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012028733A JP5959220B2 (ja) | 2012-02-13 | 2012-02-13 | 基準電圧発生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013164808A true JP2013164808A (ja) | 2013-08-22 |
JP5959220B2 JP5959220B2 (ja) | 2016-08-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012028733A Expired - Fee Related JP5959220B2 (ja) | 2012-02-13 | 2012-02-13 | 基準電圧発生装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9213415B2 (ja) |
JP (1) | JP5959220B2 (ja) |
KR (1) | KR102030982B1 (ja) |
CN (1) | CN103246309B (ja) |
TW (1) | TWI550771B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190054877A (ko) * | 2017-11-13 | 2019-05-22 | 에이플러스 마이크로스트럭쳐 일렉트로닉스 씨오., 엘티디. | 칩 저전력 소모 디지털 회로용 리니어 전압 관리장치 |
JP2019139309A (ja) * | 2018-02-06 | 2019-08-22 | エイブリック株式会社 | 基準電圧発生装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5919520B2 (ja) * | 2012-02-24 | 2016-05-18 | パナソニックIpマネジメント株式会社 | 基準電圧源回路 |
JP6289083B2 (ja) * | 2013-02-22 | 2018-03-07 | エイブリック株式会社 | 基準電圧発生回路 |
JP6215652B2 (ja) * | 2013-10-28 | 2017-10-18 | エスアイアイ・セミコンダクタ株式会社 | 基準電圧発生装置 |
US20150200270A1 (en) * | 2014-01-16 | 2015-07-16 | Globalfoundries Inc. | Field effect transistors for high-performance and low-power applications |
CN104035472A (zh) * | 2014-06-24 | 2014-09-10 | 吴江圣博瑞信息科技有限公司 | 一种全cmos参考电压源产生电路 |
JP6442322B2 (ja) * | 2015-02-26 | 2018-12-19 | エイブリック株式会社 | 基準電圧回路および電子機器 |
TWI595542B (zh) * | 2016-12-08 | 2017-08-11 | 旺宏電子股份有限公司 | 半導體結構 |
JP6805049B2 (ja) * | 2017-03-31 | 2020-12-23 | エイブリック株式会社 | 基準電圧発生装置 |
CN107153441A (zh) * | 2017-07-10 | 2017-09-12 | 长沙方星腾电子科技有限公司 | 一种基准电压生成电路 |
TWI634661B (zh) * | 2017-07-31 | 2018-09-01 | 旺宏電子股份有限公司 | 半導體結構 |
US10782723B1 (en) | 2019-11-01 | 2020-09-22 | Analog Devices International Unlimited Company | Reference generator using fet devices with different gate work functions |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124835A (ja) * | 2000-10-13 | 2002-04-26 | Seiko Epson Corp | 演算増幅回路、定電圧回路および基準電圧回路 |
Family Cites Families (9)
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US4446383A (en) * | 1982-10-29 | 1984-05-01 | International Business Machines | Reference voltage generating circuit |
JPS59200320A (ja) | 1983-04-27 | 1984-11-13 | Hitachi Ltd | 基準電圧発生回路 |
JP3717388B2 (ja) * | 2000-09-27 | 2005-11-16 | 株式会社リコー | 基準電圧発生回路及びその出力値調整方法並びに電源装置 |
JP2002140124A (ja) * | 2000-10-30 | 2002-05-17 | Seiko Epson Corp | 基準電圧回路 |
JP4704860B2 (ja) * | 2005-08-31 | 2011-06-22 | 株式会社リコー | 基準電圧発生回路及び基準電圧発生回路を使用した定電圧回路 |
JP2007294846A (ja) * | 2006-03-31 | 2007-11-08 | Ricoh Co Ltd | 基準電圧発生回路及びそれを用いた電源装置 |
CN101331437A (zh) * | 2006-03-31 | 2008-12-24 | 株式会社理光 | 基准电压产生电路及使用其的供电设备 |
JP5511166B2 (ja) * | 2008-09-10 | 2014-06-04 | セイコーインスツル株式会社 | 半導体装置 |
JP2010108419A (ja) * | 2008-10-31 | 2010-05-13 | Toshiba Corp | 基準電圧発生回路およびそれを用いたレギュレータ |
-
2012
- 2012-02-13 JP JP2012028733A patent/JP5959220B2/ja not_active Expired - Fee Related
-
2013
- 2013-01-16 TW TW102101631A patent/TWI550771B/zh not_active IP Right Cessation
- 2013-01-31 US US13/755,545 patent/US9213415B2/en not_active Expired - Fee Related
- 2013-02-05 KR KR1020130012954A patent/KR102030982B1/ko active IP Right Grant
- 2013-02-08 CN CN201310050845.7A patent/CN103246309B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124835A (ja) * | 2000-10-13 | 2002-04-26 | Seiko Epson Corp | 演算増幅回路、定電圧回路および基準電圧回路 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190054877A (ko) * | 2017-11-13 | 2019-05-22 | 에이플러스 마이크로스트럭쳐 일렉트로닉스 씨오., 엘티디. | 칩 저전력 소모 디지털 회로용 리니어 전압 관리장치 |
KR102124344B1 (ko) | 2017-11-13 | 2020-06-18 | 에이플러스 세미컨턱터 테크놀로지스 코., 엘티디. | 칩 저전력 소모 디지털 회로용 리니어 전압 관리장치 |
JP2019139309A (ja) * | 2018-02-06 | 2019-08-22 | エイブリック株式会社 | 基準電圧発生装置 |
JP7009033B2 (ja) | 2018-02-06 | 2022-01-25 | エイブリック株式会社 | 基準電圧発生装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI550771B (zh) | 2016-09-21 |
JP5959220B2 (ja) | 2016-08-02 |
CN103246309B (zh) | 2017-07-18 |
TW201344847A (zh) | 2013-11-01 |
KR20130093023A (ko) | 2013-08-21 |
KR102030982B1 (ko) | 2019-10-11 |
CN103246309A (zh) | 2013-08-14 |
US20130207636A1 (en) | 2013-08-15 |
US9213415B2 (en) | 2015-12-15 |
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