JP2013084939A - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
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- JP2013084939A JP2013084939A JP2012209915A JP2012209915A JP2013084939A JP 2013084939 A JP2013084939 A JP 2013084939A JP 2012209915 A JP2012209915 A JP 2012209915A JP 2012209915 A JP2012209915 A JP 2012209915A JP 2013084939 A JP2013084939 A JP 2013084939A
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Abstract
【解決手段】ゲート電極層、ゲート絶縁膜、インジウムを含む酸化物半導体膜、ゲート電極層と重畳する酸化物半導体膜上に接する絶縁層が順に積層され、酸化物半導体膜及び絶縁層に接するソース電極層及びドレイン電極層が設けられたトランジスタを有する半導体装置において、絶縁層表面における塩素濃度を1×1019/cm3以下とし、かつインジウム濃度を2×1019/cm3以下とする。
【選択図】図1
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1及び図2を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を、図3及び図4を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
実施の形態1又は実施の形態2に示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部又は全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
実施の形態1又は実施の形態2に示したトランジスタを用いて、対象物の情報を読み取るイメージセンサ機能を有する半導体装置を作製することができる。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビジョン装置(テレビ、又はテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、遊技機(パチンコ機、スロットマシン等)、ゲーム筐体が挙げられる。これらの電子機器の具体例を図9に示す。
Claims (9)
- 絶縁表面上にゲート電極層と、
前記ゲート電極層上にゲート絶縁膜と、
前記ゲート絶縁膜上にインジウムを含む酸化物半導体膜と、
前記ゲート電極層と重畳する前記酸化物半導体膜上に接する絶縁層と、
前記酸化物半導体膜及び前記絶縁層に接するソース電極層及びドレイン電極層とを有し、
前記絶縁層表面における塩素濃度は1×1019/cm3以下であり、かつインジウム濃度は2×1019/cm3以下であることを特徴とする半導体装置。 - 絶縁表面上にゲート電極層と、
前記ゲート電極層上にゲート絶縁膜と、
前記ゲート絶縁膜上にインジウムを含む酸化物半導体膜と、
前記ゲート電極層と重畳する前記酸化物半導体膜上に接する絶縁層と、
前記酸化物半導体膜及び前記絶縁層に接するソース電極層及びドレイン電極層とを有し、
前記酸化物半導体膜における塩素濃度は1×1019/cm3以下であり、
前記絶縁層表面における塩素濃度は1×1019/cm3以下であり、かつインジウム濃度は2×1019/cm3以下であることを特徴とする半導体装置。 - 請求項2において、前記酸化物半導体膜における塩素濃度は5×1018/cm3以下であることを特徴とする半導体装置。
- 請求項1乃至3のいずれか一項において、前記絶縁層表面における塩素濃度は5×1018/cm3以下であり、かつインジウム濃度は5×1018/cm3以下であることを特徴とする半導体装置。
- 絶縁表面上にゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にインジウムを含む酸化物半導体膜を形成し、
前記ゲート電極層と重畳する前記酸化物半導体膜上に接する絶縁層を形成し、
前記酸化物半導体膜及び前記絶縁層に接する導電膜を形成し、
前記導電膜を、塩素を含むガスによりエッチングしソース電極層及びドレイン電極層を形成し、
前記酸化物半導体膜及び前記絶縁層に残渣物除去工程を行うことを特徴とする半導体装置の作製方法。 - 請求項5において、前記残渣物除去工程として希フッ酸溶液による洗浄処理を行うことを特徴する半導体装置の作製方法。
- 請求項5において、前記残渣物除去工程として希ガスを用いたプラズマ処理を行うことを特徴する半導体装置の作製方法。
- 請求項5乃至7のいずれか一項において、前記残渣物はインジウム又は塩素を含む化合物を有することを特徴する半導体装置の作製方法。
- 絶縁表面上にゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にインジウムを含む酸化物半導体膜を形成し、
前記酸化物半導体膜を接して覆う絶縁層を形成し、
前記絶縁層に前記酸化物半導体膜に達する開口を形成し、
前記絶縁層上に前記開口の内壁を覆って導電膜を形成し、
前記導電膜を、塩素を含むガスによりエッチングし前記開口にソース電極層及びドレイン電極層を形成することを特徴とする半導体装置の作製方法。
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US9159806B2 (en) | 2015-10-13 |
CN103035735B (zh) | 2017-06-06 |
US20130082252A1 (en) | 2013-04-04 |
KR20130035188A (ko) | 2013-04-08 |
JP6096452B2 (ja) | 2017-03-15 |
US20150380562A1 (en) | 2015-12-31 |
CN103035735A (zh) | 2013-04-10 |
KR101918642B1 (ko) | 2018-11-14 |
KR20140048185A (ko) | 2014-04-23 |
CN107275411B (zh) | 2021-07-16 |
JP6423901B2 (ja) | 2018-11-14 |
US9343585B2 (en) | 2016-05-17 |
CN107275411A (zh) | 2017-10-20 |
KR101997590B1 (ko) | 2019-07-08 |
US20140017851A1 (en) | 2014-01-16 |
JP2017123473A (ja) | 2017-07-13 |
KR20180122993A (ko) | 2018-11-14 |
US8546181B2 (en) | 2013-10-01 |
KR101506303B1 (ko) | 2015-03-26 |
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