JP2012253371A - 半導体デバイスのための非対称スペーサ構造体を形成する方法 - Google Patents
半導体デバイスのための非対称スペーサ構造体を形成する方法 Download PDFInfo
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Abstract
【解決手段】半導体基板の上に少なくとも1対の隣接して離間配置された、オフセット・スペーサ114を備えるゲート構造体102の上にスペーサ層132を形成するステップであって、ゲート構造体は、スペーサ層がゲート構造体間の領域で第1の厚さで形成され、その他の場所で第2の厚さで形成されるように離間配置され、第2の厚さは第1の厚さより厚い、ステップと、1対の隣接して離間配置されたゲート構造体のオフセット・スペーサに隣接して非対称スペーサ構造体124a、bを形成するようにスペーサ層をエッチングするステップとを含み、非対称スペーサ構造体は、ソース及びドレイン領域の画定において用いられる。
【選択図】 図9
Description
108及びゲート酸化物層106のような特定の形状は、本明細書ではさらに詳細には説明されない。
102:ゲート構造体
104:基板
106:ゲート酸化物層
108:STI構造
110、130、132、122:スペーサ層
112:傾斜イオン注入
114、124:スペーサ
116、118、120:エクステンション
Claims (7)
- 半導体デバイスのための非対称スペーサ構造体を形成する方法であって、
半導体基板の上に少なくとも1対の隣接して離間配置された、オフセット・スペーサを備えるゲート構造体の上にスペーサ層を形成するステップであって、前記ゲート構造体は、前記スペーサ層が前記ゲート構造体間の領域で第1の厚さで形成され、その他の場所で第2の厚さで形成されるように離間配置され、前記第2の厚さは前記第1の厚さより厚い、ステップと、
前記1対の隣接して離間配置されたゲート構造体の前記オフセット・スペーサに隣接して非対称スペーサ構造体を形成するように前記スペーサ層をエッチングするステップとを含み、
前記非対称スペーサ構造体は、ソース及びドレイン領域の画定において用いられる、方法。 - 前記1対の隣接して離間配置されたゲート構造体間の距離は、前記ゲート構造体の高さの1倍から3倍までである、請求項1に記載の方法。
- 半導体デバイスのための電界効果トランジスタ(FET)構造体を形成する方法であって、
半導体基板の上に少なくとも1対の隣接して離間配置された、オフセット・スペーサを備えるゲート構造体を形成するステップと、
前記隣接して離間配置されたゲート構造体の上にスペーサ層を形成するステップであって、前記ゲート構造体は、前記スペーサ層が前記ゲート構造体間の領域で第1の厚さで形成され、その他の場所で第2の厚さで形成されるように離間配置され、前記第2の厚さは前記第1の厚さよりも厚い、ステップと、
前記1対の隣接して離間配置されたゲート構造体の前記オフセット・スペーサに隣接して非対称性スペーサ構造体を形成するように前記スペーサ層をエッチングするステップと、
前記基板にドープ領域を注入するステップであって、前記ドープ領域は、前記非対称スペーサ構造体による非対称的特性を有するステップ、を含む方法。 - 前記スペーサ層の前記第1の厚さに対応する前記スペーサ構造体は、前記スペーサ層の前記第2の厚さに対応する前記スペーサ構造体より薄い、請求項3に記載の方法。
- 前記ドープ領域は、エクステンション注入領域を含み、前記オフセット・スペーサは厚さが非対称であり、前記薄い方のオフセット・スペーサに対応する前記エクステンション注入領域は、前記厚い方のオフセット・スペーサに対応する前記エクステンション注入領域よりも長いゲート・オーバーラップを有する、請求項4に記載の方法。
- 前記ドープ領域は、ソース及びドレイン領域をさらに含み、前記薄い方の第2のスペーサに対応する前記ドープ領域はソース領域をさらに含み、前記厚い方の第2のスペーサに対応する前記ドープ領域は、ドレイン領域をさらに含む、請求項4に記載の方法。
- 前記ソース領域は、前記ドレイン領域よりも短いエクステンションを有する、請求項6に記載の方法。
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US11/163,165 US7396713B2 (en) | 2005-10-07 | 2005-10-07 | Structure and method for forming asymmetrical overlap capacitance in field effect transistors |
US11/163,165 | 2005-10-07 |
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JP2008534619A Division JP5225091B2 (ja) | 2005-10-07 | 2006-10-02 | 電界効果トランジスタにおいて非対称のオーバーラップ容量を形成するための構造及び方法 |
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JP2012169233A Expired - Fee Related JP5602799B2 (ja) | 2005-10-07 | 2012-07-31 | 半導体デバイスのための非対称スペーサ構造体を形成する方法 |
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US (2) | US7396713B2 (ja) |
EP (1) | EP1946360A4 (ja) |
JP (2) | JP5225091B2 (ja) |
KR (1) | KR101054703B1 (ja) |
CN (1) | CN101647108B (ja) |
TW (1) | TW200731417A (ja) |
WO (1) | WO2007044324A2 (ja) |
Cited By (1)
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WO2017126332A1 (ja) | 2016-01-21 | 2017-07-27 | ソニー株式会社 | 半導体装置およびその製造方法、固体撮像素子、並びに電子機器 |
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JP5170490B2 (ja) * | 2005-06-09 | 2013-03-27 | セイコーエプソン株式会社 | 半導体装置 |
US7915670B2 (en) | 2007-07-16 | 2011-03-29 | International Business Machines Corporation | Asymmetric field effect transistor structure and method |
US7843016B2 (en) * | 2007-07-16 | 2010-11-30 | International Business Machines Corporation | Asymmetric field effect transistor structure and method |
US20090159936A1 (en) * | 2007-12-20 | 2009-06-25 | Uday Shah | Device with asymmetric spacers |
US9016236B2 (en) * | 2008-08-04 | 2015-04-28 | International Business Machines Corporation | Method and apparatus for angular high density plasma chemical vapor deposition |
DE102008049719A1 (de) | 2008-09-30 | 2010-04-08 | Advanced Micro Devices, Inc., Sunnyvale | Asymmetrische Transistorbauelemente, die durch asymmetrische Abstandshalter und eine geeignete Implantation hergestellt sind |
JP5442235B2 (ja) * | 2008-11-06 | 2014-03-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
US8334560B2 (en) * | 2009-09-02 | 2012-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reverse disturb immune asymmetrical sidewall floating gate devices |
US20110049582A1 (en) * | 2009-09-03 | 2011-03-03 | International Business Machines Corporation | Asymmetric source and drain stressor regions |
US8643107B2 (en) * | 2010-01-07 | 2014-02-04 | International Business Machines Corporation | Body-tied asymmetric N-type field effect transistor |
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Also Published As
Publication number | Publication date |
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EP1946360A4 (en) | 2009-11-11 |
JP5225091B2 (ja) | 2013-07-03 |
TW200731417A (en) | 2007-08-16 |
WO2007044324A3 (en) | 2009-06-11 |
JP2009512192A (ja) | 2009-03-19 |
JP5602799B2 (ja) | 2014-10-08 |
KR20080061378A (ko) | 2008-07-02 |
CN101647108B (zh) | 2011-09-14 |
WO2007044324A2 (en) | 2007-04-19 |
EP1946360A2 (en) | 2008-07-23 |
US20080185662A1 (en) | 2008-08-07 |
CN101647108A (zh) | 2010-02-10 |
KR101054703B1 (ko) | 2011-08-08 |
US7396713B2 (en) | 2008-07-08 |
US20070080401A1 (en) | 2007-04-12 |
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