US20080185662A1 - Structure and method for forming asymmetrical overlap capacitance in field effect transistors - Google Patents

Structure and method for forming asymmetrical overlap capacitance in field effect transistors Download PDF

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US20080185662A1
US20080185662A1 US12/062,068 US6206808A US2008185662A1 US 20080185662 A1 US20080185662 A1 US 20080185662A1 US 6206808 A US6206808 A US 6206808A US 2008185662 A1 US2008185662 A1 US 2008185662A1
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pair
structures
gate
extension
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Haining Yang
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GlobalFoundries Inc
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H01L21/823425MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823468MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66575Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66659Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

A method for forming asymmetric spacer structures for a semiconductor device includes forming a spacer layer over at least a pair of adjacently spaced gate structures disposed over a semiconductor substrate. The gate structures are spaced such that the spacer layer is formed at a first thickness in a region between the gate structures and at a second thickness elsewhere, the second thickness being greater than said first thickness. The spacer layer is etched so as to form asymmetric spacer structures for the pair of adjacently spaced gate structures.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a division of U.S. patent application Ser. No. 11/163,165, filed Oct. 7, 2005, the disclosure of which is incorporated by reference herein in its entirety.
  • TRADEMARKS
  • IBM® is a registered trademark of International Business Machines Corporation, Armonk, N.Y., U.S.A. Other names used herein may be registered trademarks, trademarks or product names of International Business Machines Corporation or other companies.
  • BACKGROUND
  • The present invention relates generally to semiconductor device processing techniques, and, more particularly, to a structure and method for forming asymmetrical overlap capacitance in field effect transistors (FETs).
  • In the manufacture of semiconductor devices, there is a constant drive to increase the operating speed of certain integrated circuit devices such as microprocessors, memory devices, and the like. This drive is fueled by consumer demand for computers and other electronic devices that operate at increasingly greater speeds. As a result of the demand for increased speed, there has been a continual reduction in the size of semiconductor devices, such as transistors. For example, in a device such as a field effect transistor (FET), device parameters such as channel length, junction depth and gate dielectric thickness, to name a few, all continue to be scaled downward.
  • Generally speaking, the smaller the channel length of the FET, the faster the transistor will operate. Moreover, by reducing the size and/or scale of the components of a typical transistor, there is also an increase in the density and number of the transistors that may be produced on a given amount of wafer real estate, thus lowering the overall cost per transistor as well as the cost of integrated circuit devices incorporating such transistors.
  • Unfortunately, reducing the channel length of a transistor also increases “short channel” effects, as well as “edge effects” that are relatively unimportant in long channel transistors. One example of a short channel effect includes, among other aspects, an increased drain to source leakage current when the transistor is supposed to be in the “off” or non-conductive state, due to an enlarged depletion region relative to the shorter channel length. In addition, one of the edge effects that may also adversely influence transistor performance is what is known as Miller capacitance. The Miller capacitance is a parasitic overlap capacitance (Cov) that arises as a result of the doped polycrystalline silicon gate electrode and gate dielectric that (almost invariably) overlaps with a conductive portion of the more heavily doped source/drain regions and/or the less heavily doped source/drain extension (SDE) regions (if present) of the FET.
  • Moreover, as transistor dimensions continue to scale down, the gate to source/drain extension overlap needs to be kept relatively constant so that drive current can be maintained. For example, a minimum of about 20 nm/side of overlap is necessary to prevent transistor drive current (Idsat) degradation. When an overlap is too small, a high resistance region will be created between the extension and the channel. As devices become smaller, the source extension to drain extension distance becomes narrower, resulting in a severe punchthrough problem.
  • Accordingly, it would be desirable to be able to fabricate an FET device that maintains a low series resistance between the gate and the source of the device, while at the same time minimizing adverse consequences such as short channel effects, hot carrier effects, punchthrough and parasitic Miller capacitance formed by excessive gate to drain overlap.
  • SUMMARY
  • The foregoing discussed drawbacks and deficiencies of the prior art are overcome or alleviated by a method for forming asymmetric spacer structures for a semiconductor device. In an exemplary embodiment, the method includes forming a spacer layer over at least a pair of adjacently spaced gate structures disposed over a semiconductor substrate. The gate structures are spaced such that the spacer layer is formed at a first thickness in a region between the gate structures and at a second thickness elsewhere, the second thickness being greater than said first thickness. The spacer layer is etched so as to form asymmetric spacer structures for the pair of adjacently spaced gate structures.
  • In another embodiment, a method for forming field effect transistor (FET) structures for a semiconductor device includes forming at least a pair of adjacently spaced gate structures over a semiconductor substrate, and forming a spacer layer over the adjacently spaced gate structures. The gate structures are spaced such that the spacer layer is formed at first thickness in a region between the gate structures and at a second thickness elsewhere, the said second thickness being greater than said first thickness. The spacer layer is etched so as to form asymmetric spacer structures adjacent sidewalls of the pair of adjacently spaced gate structures, and the substrate is implanted with doped regions having asymmetric characteristics in accordance with the asymmetric spacer structures.
  • In still another embodiment, a method for forming field effect transistor (FET) structures for a semiconductor device includes forming at least a pair of adjacently spaced gate structures over a semiconductor substrate, forming offset spacers adjacent sidewalls of the pair of adjacently spaced gate structures, and forming extension regions in the substrate. A second spacer layer is formed over the offset spacers, the gate structures and the substrate. The second spacer layer is subjected to a single, angled ion implantation of a neutral species, the angled ion implantation originating from a single direction. The second spacer layer is etched, wherein portions of the second spacer layer subjected to said angled ion implantation are etched at a faster rate than unexposed portions thereof, thereby forming asymmetrical second spacers adjacent the offset spacers. The substrate is then implanted with source and drain regions.
  • In still another embodiment, a field effect transistor (FET) device, includes a gate structure formed over a semiconductor substrate, a first pair of spacer structures formed on sidewalls of the gate structure, and a second pair of spacer structures formed adjacent the first pair of spacer structures, the second pair of spacer structures having an asymmetrical thickness with respect to one another. A source region and extension thereof is implanted on one side of the gate structure, and a drain region and extension thereof is implanted on the other side of the gate structure. The extension of the source region has a different length than the extension of the drain region, in accordance with said asymmetrical thickness of the second pair of spacer structures.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • Referring to the exemplary drawings wherein like elements are numbered alike in the several Figures:
  • FIGS. 1 through 3 are a series of a cross sectional views illustrating the formation of asymmetrical source and drain overlap regions in an FET device, in accordance with an exemplary embodiment of the invention;
  • FIGS. 4 through 7 and FIG. 9 are a series of a cross sectional views illustrating the formation of asymmetrical source and drain extension regions in an FET device, in accordance with an alternative embodiment of the invention;
  • FIG. 8 is an exemplary SEM image of a device formed in accordance with the processing step shown in FIG. 7;
  • FIG. 10 is an exemplary SEM image of a portion of an SRAM cell having asymmetric spacers;
  • FIGS. 11 through 14 are a series of a cross sectional views illustrating the formation of asymmetrical source and drain overlap regions in an FET device, in accordance with an alternative embodiment of the invention; and
  • FIGS. 15 through 20 are a series of a cross sectional views illustrating the formation of asymmetrical source and drain extension regions in an FET device, in accordance with still another embodiment of the invention.
  • DETAILED DESCRIPTION
  • Disclosed herein is a method and structure for reducing overlap capacitance in field effect transistors (FETs). In a conventional FET fabrication process, the spacer structures formed on opposite sides of the gate conductor are generally symmetrical, such that subsequently formed source and drain extensions have the same amount of overlap with respect to the gate. However, because the transistor drive current is primarily controlled by the amount of source side overlap (i.e., gate to source resistance), the amount of drain side overlap can still be reduced without adversely impacting drive current. On the other hand, the reduction in gate to drain overlap is beneficial in terms of short channel effects, punchthrough, hot carrier effects and parasitic capacitance, for example.
  • Furthermore, as device dimensions shrink, the extension resistance becomes dominant. A shorter source side extension (as a result of a narrow spacer width) will reduce the series resistance and improve device performance, without also causing problems such as hot carrier effects, since the drain side extension (as a result of not reducing the spacer width) is still maintained at an appropriate length. This is in contrast to conventionally formed symmetrical extensions for the source and drain sides, which in turn result in symmetrical source and drain extension lengths.
  • Accordingly, as described in further detail herein, the disclosed invention embodiments utilize various fabrication techniques to produce asymmetric spacer structures that in turn result in source and drain extension having long and short overlaps, as well as long and short extensions themselves.
  • Referring initially to FIGS. 1 through 3, there is shown a series of a cross sectional views illustrating the formation of asymmetrical source and drain overlap regions for a pair of FET devices 100, in accordance with an exemplary embodiment of the invention. In particular, FIG. 1 illustrates a pair of adjacent gate conductors 102 formed over a semiconductor substrate 104 (e.g., silicon), with the gates 102 being formed on corresponding gate oxide layers 106. Shallow trench isolation (STI) structures 108 are also illustrated for electrically isolating individual devices from one another on the substrate 104. As the basic FET structures are well known to one skilled in the art, certain features such as the STIs 108 and gate oxide layers 106 are not discussed in further detail herein.
  • As is also shown in FIG. 1, a spacer layer 130 of non-uniform thickness is formed over a pair of gate structures 102. The embodiment of FIG. 1 makes use of two neighboring gates in close proximity (e.g., a separation therebetween of about 1 to 3 times the gate height). By selectively tuning the deposition parameters in forming the spacer layer 130, a thinner film will be formed over the region between the two gates with respect to the regions on the outside of the gates. As such, when the spacer layer 130 is patterned and etched, the asymmetric spacers 114 a, 114 b will result from the constant etch rate of a layer of non-uniform thickness, as illustrated in FIG. 2.
  • Following the formation of the asymmetrical spacers, FIG. 3 illustrates a halo and extension implantation step in accordance with standard device processing. After an anneal to drive the implanted dopant materials, it is seen that the extensions 116 corresponding to the thinner spacers 114 b have longer overlaps than the extensions 118 corresponding to the thicker spacers 114 a. In other words, the “long overlap” extensions 116 extend further beneath the gate than do the “short overlap” extensions 118. In a preferred embodiment, the source terminal of the FET structures will be located at the long overlap extension side of the gate (to maintain drive current) while the drain terminal is located at the short overlap extension side of the gate (to reduce overall overlap capacitance and improve short channel effects).
  • The principles of asymmetric spacer formation through non-uniform layer formation may also be applied during the formation of the deep source and drain regions as well. FIGS. 4 through 7 and FIG. 9 are a series of a cross sectional views illustrating the formation of asymmetrical source and drain extension regions in an FET device, in accordance with another embodiment of the invention. Beginning in FIG. 4, offset spacers 114 are initially formed over the FET gate structures.
  • The spacers 114 may be symmetrical (i.e., substantially equal thickness on both sides of the gate) as in a conventional process or, alternatively, the spacers 114 could be formed asymmetrically as shown in FIG. 2. For purposes of illustration, the offset spacers 114 are depicted as symmetric in the present sequence. FIG. 5 illustrates a halo and extension implantation step in accordance with standard device processing, followed by an anneal to diffuse the implanted dopant materials. For symmetrical offset spacers 114, the resulting extensions 120 on both sides of the gates will have substantially equal overlaps. On the other hand, if the spacers 114 are formed in accordance with the processing shown in FIGS. 1-2, then asymmetrical extensions will appear as shown in FIG. 3.
  • As then shown in FIG. 6, a non-uniform second spacer layer 132 (e.g., Si3N4) is formed over the device. Similar to the embodiment of FIG. 1, the second spacer layer 132 (given a sufficiently close distance between gates and properly tuned process conditions) will be formed thinner in the region between the gates, and thicker in the regions outside the gates. Once the second spacer layer 132 is patterned and etched in FIG. 7, the asymmetric spacers 124 a, 124 b are formed. By way of illustration, FIG. 8 is an exemplary SEM image of a device formed in accordance with the processing step shown in FIG. 7.
  • Through the formation of the asymmetric spacers 124 a, 124 b, the source/drain ion implantation step shown in FIG. 9 results in extensions with different lengths. More specifically, the extensions 120 a on the outside of the gates are longer in comparison to the extensions 120 b between the gates. This is due to the fact that the deep source/drain implant comes closer to the gate where the second set of spacers is thinner, thus shortening the extension regions formed in FIG. 5. With such shorter extensions, there is a lower resistance to carriers (e.g., electrons or holes). In such an embodiment, it would be practical to have a common source terminal located between the gates to reduce the series resistance, while the drain terminals are located outside the gates where the extensions are longer.
  • One suitable example of such an application could be the PFET device pair of an SRAM cell, which has the source terminals thereof connected to the supply voltage (VDD). FIG. 10 is an exemplary SEM image of a portion of an SRAM cell having asymmetric spacers, similar to the embodiment shown in FIG. 9. As will be noted, the thinner spacers are located between the two gates.
  • FIGS. 11 through 14 illustrate another technique for forming asymmetric spacers, in accordance with a further embodiment of the invention. As with the previous embodiments discussed above, FIG. 11 illustrates a pair of gate conductors 102 formed over a semiconductor substrate 104, gate oxide layers 106 and STI structures 108. In addition, a spacer layer 110 (e.g., oxide, TEOS, silicon nitride) is formed over the devices 100 for the purpose of forming spacers prior to dopant implantation.
  • Conventionally, the spacer layer 110 of FIG. 11 would then be patterned and uniformly etched to result in substantially symmetric spacers along the sidewalls of the gate conductors 102. However, as shown in FIG. 12, the wafer is then subjected to an angled ion implantation (arrows 112) of a neutral dopant species such as germanium (Ge) or xenon (Xe), for example. This results in the spacer layer 110, on one side of the gate structures, having receiving the angled ion implant. In an exemplary embodiment, the implant angle may be on the order from about 10 degrees to about 35 degrees. The effect of such an implant is to increase the etch rate of implanted portions of the spacer layer 110 with respect to the remainder of the layer. Thus, when the implanted spacer layer 110 is subsequently patterned and etched, as shown in FIG. 13, each gate is left with a pair of spacers 114 a, 114 b, wherein the spacers 114 b on the implanted side of the gate are thinner (i.e., asymmetrical) with respect to the spacers 114 a on the non-implanted side of the gate.
  • Following the formation of the asymmetrical spacers, FIG. 14 illustrates a halo and extension implantation step to form the extensions having longer and shorter overlaps 116, 118, similar to the structure of FIG. 3. However, whereas the longer overlaps 116 of FIG. 3 are located on the inside of the gates, the longer overlaps 116 of FIG. 14 are located on the right side of the gates.
  • The principles of asymmetric spacer formation through ion implantation may also be applied during the formation of the source and drain regions as well. FIGS. 15 through 20 are a series of a cross sectional views illustrating the formation of asymmetrical source and drain extension regions in an FET device, in accordance with another embodiment of the invention. Beginning in FIG. 15, the FET structures are shown after the formation of offset spacers 114. As with FIG. 4, the offset spacers 114 may either by symmetrically formed or asymmetrically formed prior to the halo/extension ion implant step of FIG. 5.
  • FIG. 16 illustrates a halo and extension implantation step in accordance with standard device processing, followed by an anneal to diffuse the implanted dopant materials. For symmetrical offset spacers, the resulting extensions 120 on both sides of the gates will have substantially equal overlaps. On the other hand, if the spacers 114 are formed in accordance with the processing shown in FIGS. 12-13, then the extensions 120 will appear as shown in FIG. 14. In either case, a second spacer layer 122 (e.g., Si3N4) is then formed over the device as shown in FIG. 17.
  • Then, as shown in FIG. 18, the second spacer layer 122 is subjected to an angled ion implantation (arrows 112) of a neutral dopant species, in a manner similar to that discussed in the previous embodiment. Again, this has the effect of increasing the etch rate of the implanted portions of the layer 122. Thus, when the layer 122 is patterned and etched as shown in FIG. 19, a second set of spacers 124 a, 124 b is formed over the first set of offset spacers 114. Regardless of whether the first set of offset spacers 114 is symmetric or asymmetric, the second set of spacers will in fact be asymmetric due to the angled implantation shown in FIG. 18. In particular, the non-implanted side of the gate structures include thicker spacers 124 a, while the implanted side of the gate structure includes thinner spacers 124 b.
  • As finally illustrated in FIG. 20, the wafer is then subjected to a (deep) source/drain implantation in accordance with conventional process doping. However, on the side of the gates corresponding to the thinner spacers 124 b, the resulting extensions 120 b that remain after the deep source/drain implant become shorter in length than the extensions 120 a on the side of the gates corresponding to the thicker spacers 124 a. Thus, in a preferred embodiment, the source side of the FETs is located at the sides of the gate corresponding to the thinner spacers 124 b. In contrast, the drain side extensions are still maintained at a certain length in order to prevent hot carrier effects.
  • Through the use of an angled, neutral dopant implantation step in order to increase the etch rate of a spacer layer, an FET device having asymmetrical spacer thicknesses may be achieved. This in turn allows for extensions with long/short overlaps, as well as longer and shorter extensions themselves. However, additional methods are also contemplated that will result in the asymmetric spacers such as discussed above.
  • While the invention has been described with reference to a preferred embodiment or embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims (13)

1. A semiconductor device, comprising:
at least a pair of field effect transistor (FET) structures including a pair of adjacently spaced gate structures formed over a semiconductor substrate;
each of said pair of FET structures having a pair of asymmetric spacer structures adjacent sidewalls thereof;
wherein inner spacer structures located in a region between said pair of gate structures are thinner than outer spacer structures located on the outside of said pair of gate structures.
2. The device of claim 1, wherein said asymmetric spacer structures further comprise offset spacers used in the definition of halo and extension implantation regions.
3. The device of claim 1, further comprising extensions implanted within said substrate, wherein said extensions corresponding to thinner offset spacers have a longer gate overlap than said extensions corresponding to thicker offset spacers.
4. The device of claim 1, wherein said asymmetric spacer structures further comprise second spacers formed over offset spacers, used in the definition of source and drain regions.
5. The device of claim 4, further comprising source and drain regions implanted within said substrate, wherein said source regions correspond to thinner second spacers and said drain regions correspond to thicker second spacers.
6. The device of claim 5, wherein said source regions have shorter extensions than said drain regions.
7. The device of claim 1, wherein a distance between said pair of adjacently spaced gate structures is about 1 to 3 times a height of said gate structures.
8. A field effect transistor (FET) device, comprising:
a gate structure formed over a semiconductor substrate;
a first pair of spacer structures formed on sidewalls of said gate structure;
a second pair of spacer structures formed adjacent said first pair of spacer structures, said second pair of spacer structures having an asymmetrical thickness with respect to one another;
a source region and extension thereof implanted on one side of said gate structure; and
a drain region and extension thereof implanted on the other side of said gate structure;
wherein the extension of said source region has a different length than the extension of said drain region, in accordance with said asymmetrical thickness of said second pair of spacer structures.
9. The FET device of claim 8, wherein said source region corresponds to a thinner one of said second pair of spacer structures and said drain regions corresponds to a thicker one of said second pair of spacer structures.
10. The FET device of claim 9, wherein the extension of said source region is shorter than the extension of said drain region.
11. The FET device of claim 8, wherein said first pair of spacer structures also have an asymmetrical thickness with respect to one another.
12. The FET device of claim 11, wherein one of said source and drain extensions corresponding to a thinner one of said first pair of spacer structures has a longer gate overlap than the other of said source and drain extensions corresponding to a thicker one of said first pair of spacer structures.
13. The FET device of claim 12, wherein the extension of said source region has a longer gate overlap than the extension of said drain region.
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