JP2012239189A - 集積されたパワー増幅器を有するcmosトランシーバ - Google Patents
集積されたパワー増幅器を有するcmosトランシーバ Download PDFInfo
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Abstract
【解決手段】入力無線周波数信号を受信するため接地点と第1のゲートに接続されたソースを有する第1のNMOSトランジスタ12は、第1のトランスコンダクタンスと第1の破壊電圧とを有する。また第2のNMOSトランジスタは、第1のNMOSトランジスタのドレインに接続されたソースと、基準DC電圧に接続されたゲートと、増幅された無線信号の出力を与えるドレインと、基準DC電圧と第2のNMOSトランジスタのドレインとの間に配置された負荷とを有する。第2のNMOSトランジスタ14は第2のトランスコンダクタンスと第2の破壊電圧とを有し、第2の絶縁体は第1の絶縁体よりも厚い。この結果、第1のトランスコンダクタンスは第2のトランスコンダクタンスよりも大きく、第2の破壊電圧は第1の破壊電圧よりも大きい。
【選択図】図1
Description
電圧は新型のCMOS装置の破壊電圧を超え、予測不能な性能または装置の損傷を生じさせる。
に配置され、第2のNMOSトランジスタは第2のトランスコンダクタンスおよびそれに関連する第2の破壊電圧とを有し、第2の絶縁体は第1の絶縁体よりも厚い。これにより第1のトランスコンダクタンスは第2のトランスコンダクタンスよりも大きく、第2の破壊電圧は第1の破壊電圧よりも大きい。
図1は絶縁破壊に耐えるトランジスタ構造10を示しており、これは以下さらに説明するように他のCMOS回路コンポーネントと共に集積されることを目的とするパワー増幅器の最終出力段で使用される。この出力段の基本的なトポロジは2つのNMOSトランジスタ12、14である。示されているように、電磁信号等、典型的には無線周波数信号、ここでは無線周波数入力信号RFINとして説明されている通信信号はトランジスタ12のゲートに入力され、トランジスタ14のゲートはパワー供給電圧VDDに接続されている。トランジスタ12はパワー増幅に必要なトランスコンダクタンスを与え、トランジスタ14はRFOUT ノードで生じる高い電圧スイングからトランジスタ12を保護する。トランジスタ14は1の電流利得を有するように接続されているので、トランジスタ12のトランスコンダクタンスをそれ程劣化せず、その破壊電圧を超過せずにRFout OUT の電圧振幅を2*VDDであるように許容できる。さらに、トランジスタ12と14間のソース−ドレイン接続点に現れる電圧はRFOUT 電圧の分割されたバージョンであり、このような過剰な電圧スイングはトランジスタ12の接合部に現れない。
Claims (25)
- 増幅された無線周波数信号を獲得するために基準DC電圧を有する回路で無線周波数信号を、関連する負荷を有する出力へ増幅する集積回路トランジスタ構造において、
接地電位に接続されたソースと、第1の絶縁体上に配置されて入力無線周波数信号を受信する第1のゲートとを有し、第1のトランスコンダクタンスおよびそれに関連する第1の破壊電圧を有している第1のNMOSトランジスタと、
第1のNMOSトランジスタのドレインに接続されたソースと、基準DC電圧源に接続されたゲートと、増幅された無線信号の出力部を構成するドレインと、
基準DC電圧源と第2のNMOSトランジスタのドレインとの間に配置された負荷とを有し、第2のゲートは第2の絶縁体上に配置されている第2のNMOSトランジスタとを具備しており、第2のNMOSトランジスタは第2のトランスコンダクタンスおよびそれに関連する第2の破壊電圧を有しているトランジスタ構造。 - 第2の絶縁体は第1の絶縁体よりも厚く、それによって第1のトランスコンダクタンスは第2のトランスコンダクタンスよりも大きい請求項1記載のトランジスタ構造。
- 第2の破壊電圧は第1の破壊電圧よりも大きい請求項2記載のトランジスタ構造。
- 第2の破壊電圧は第1の破壊電圧よりも大きい請求項1記載のトランジスタ構造。
- 第2の絶縁体は第1の絶縁体と実質上同一の厚さである請求項1記載のトランジスタ構造。
- 集積回路トランジスタ構造は金属接地平面を含んでいる半導体チップパッケージ内に配置され、第1、第2の各NMOSトランジスタは接地平面に電気的に接続されている部分を有している請求項1記載のトランジスタ構造。
- 接地平面に対する電気接続はボンドパッドによる電気接続を含んでいる請求項6記載のトランジスタ構造。
- 増幅された無線信号の出力部は集積回路のエッジの500μm以内に配置されている請求項6記載のトランジスタ構造。
- 増幅された無線信号の出力部は無線信号ボンドパッドを経て半導体チップパッケージ上の端子に接続され、無線信号ボンドパッドはそれに関連することができる複数の金属層の一部の金属層を含んでいる請求項8記載のトランジスタ構造。
- 無線信号ボンドパッドはその下に位置する基体中に拡散層を含んでいる請求項9記載のトランジスタ構造。
- 増幅された無線信号の出力部は5つの層を有することができる無線信号ボンドパッド上の下部の2つの電気層を通って接続されていない請求項9記載のトランジスタ構造。
- 集積回路チップを具備している差無線周波数信号を増幅する装置において、集積回路チップは、
差無線周波数信号を受信し、第1の段の増幅された差無線周波数信号を生成する第1のカスコード接続されたMOSトランジスタを含んでいる第1の差増幅段と、
第1の段の増幅された差無線周波数信号の転送を可能にする第1のブロッキングキャパシタと第1のシャントインダクタとを含んでいる第1のレベルシフト段と、
第1のレベルシフト段から第1の段の増幅された差無線周波数信号を受信し、第2の段の増幅された差無線周波数信号を発生する第2のカスコード接続されたMOSトランジスタを含んでいる第2の差駆動段とを含んでいる増幅装置。 - 第2の差駆動段の各駆動段は、
接地されたソースと、第1の絶縁体上に配置されて入力無線周波数信号を受信する第1のゲートとを備え、第1のトランスコンダクタンスおよびそれに関する第1の破壊電圧とを有する第1のNMOSトランジスタと、
第1のNMOSトランジスタのドレインに接続されたソースと、基準DC電圧源に接続されたゲートと、増幅された無線信号の出力を与えるドレインと、基準DC電圧源と第2のNMOSトランジスタのドレインとの間に配置されている負荷とを有し、第2のゲートは第2の絶縁体上に配置されている第2のNMOSトランジスタと
を具備しており、
この第2のNMOSトランジスタは第2のトランスコンダクタンスとそれに関連する第2の破壊電圧とを有している請求項12記載の装置。 - 第1のトランスコンダクタンスが第2のトランスコンダクタンスよりも大きくなるように第2の絶縁体は第1の絶縁体よりも厚さが大きくされている請求項13記載の装置。
- 第2の破壊電圧は第1の破壊電圧よりも大きい請求項14記載の装置。
- 第2の破壊電圧は第1の破壊電圧よりも大きい請求項13記載の装置。
- 第2の絶縁体は第1の絶縁体と実質上同一の厚さである請求項13記載の装置。
- さらに、第2の段の増幅された差無線周波数信号の転送を可能にする第2のブロッキングキャパシタと第2のシャントインダクタとを含んでいる第2のレベルシフト段と、
第2のレベルシフト段から第2の段の増幅された差無線周波数信号を受信し、第3の段の増幅された差無線周波数信号を発生する第3のカスコード接続されたMOSトランジスタを含んでいる第3の差動段とを含んでいる請求項12記載の装置。 - 第3の差駆動段の各駆動段は、
接地されたソースと、第1の絶縁体上に配置されて入力無線周波数信号を受信する第1のゲートとを備え、第1のトランスコンダクタンスおよびそれに関する第1の破壊電圧を有する第1のNMOSトランジスタと、
第1のNMOSトランジスタのドレインに接続されたソースと、基準DC電圧源に接続されたゲートと、増幅された無線信号の出力を与えるドレインと、基準DC電圧源と第2のNMOSトランジスタのドレインとの間に配置されている負荷とを有し、第2のゲートは第2の絶縁体上に配置されている第2のNMOSトランジスタとを具備しており、この第2のNMOSトランジスタは第2のトランスコンダクタンスとそれに関連する第2の破壊電圧とを有する請求項12記載の装置。 - 第1のトランスコンダクタンスが第2のトランスコンダクタンスよりも大きくなるように第2の絶縁体は第1の絶縁体よりも厚さが大きくされている請求項19記載の装置。
- 第2の破壊電圧は第1の破壊電圧よりも大きい請求項20記載の装置。
- 第2の破壊電圧は第1の破壊電圧よりも大きい請求項19記載の装置。
- 第2の絶縁体は第1の絶縁体と実質上同一の厚さである請求項19記載の装置。
- 集積回路チップは半導体パッケージ中にパッケージされ、半導体パッケージはパッケージの1側面の周辺部のみに端子を含み、周辺部内のパッケージの1側面上の金属接地平面と、差入力増幅段と、差駆動増幅段と、金属接地平面上に配置されている差出力段と、差入力増幅段により発生される熱エネルギ用のヒートシンクを与える金属接地平面と、差駆動増幅段と、差出力段とを含んでいる請求項13記載の集積回路。
- 集積回路チップを具備している差無線周波数信号を増幅する装置において、集積回路チップは、
差無線周波数信号を受信し第1の段の増幅された差無線周波数信号を生成する第1のカスコード接続されたMOSトランジスタを含んでおり、予め定められた第1の供給電圧を供給される第1の差増幅段と、
第1の増幅段から第1の段の増幅された差無線周波数信号を受信し、第2の段の増幅された差無線周波数信号を生成する第2のカスコード接続されたMOSトランジスタを含んでおり、第1の供給電圧よりも大きい予め定められた第2の供給電圧を供給される第2の差増幅段と
を含んでいる装置。
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Also Published As
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JP2015201865A (ja) | 2015-11-12 |
EP1317776A2 (en) | 2003-06-11 |
KR100823241B1 (ko) | 2008-04-18 |
JP5389989B2 (ja) | 2014-01-15 |
KR20080003938A (ko) | 2008-01-08 |
JP2004509533A (ja) | 2004-03-25 |
KR100829200B1 (ko) | 2008-05-13 |
US6504433B1 (en) | 2003-01-07 |
TW503611B (en) | 2002-09-21 |
JP2014030197A (ja) | 2014-02-13 |
EP3051587B1 (en) | 2018-12-12 |
EP1317776B1 (en) | 2016-03-09 |
US6850117B2 (en) | 2005-02-01 |
US20030155976A1 (en) | 2003-08-21 |
JP6046004B2 (ja) | 2016-12-14 |
WO2002023634A9 (en) | 2003-04-03 |
US6504431B2 (en) | 2003-01-07 |
AU2001290886A1 (en) | 2002-03-26 |
WO2002023634A2 (en) | 2002-03-21 |
WO2002023634A3 (en) | 2002-06-20 |
EP3051587A1 (en) | 2016-08-03 |
US20020105380A1 (en) | 2002-08-08 |
KR20030082540A (ko) | 2003-10-22 |
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