AU2001290886A1 - Cmos transceiver having an integrated power amplifier - Google Patents

Cmos transceiver having an integrated power amplifier

Info

Publication number
AU2001290886A1
AU2001290886A1 AU2001290886A AU9088601A AU2001290886A1 AU 2001290886 A1 AU2001290886 A1 AU 2001290886A1 AU 2001290886 A AU2001290886 A AU 2001290886A AU 9088601 A AU9088601 A AU 9088601A AU 2001290886 A1 AU2001290886 A1 AU 2001290886A1
Authority
AU
Australia
Prior art keywords
power amplifier
integrated power
cmos transceiver
cmos
transceiver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001290886A
Inventor
David Su
David J. Weber
Patrick Yue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Atheros Inc
Original Assignee
Atheros Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atheros Communications Inc filed Critical Atheros Communications Inc
Publication of AU2001290886A1 publication Critical patent/AU2001290886A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01031—Gallium [Ga]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/06—A balun, i.e. balanced to or from unbalanced converter, being present at the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45638—Indexing scheme relating to differential amplifiers the LC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45652—Indexing scheme relating to differential amplifiers the LC comprising one or more further dif amp stages, either identical to the dif amp or not, in cascade
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AU2001290886A 2000-09-15 2001-09-14 Cmos transceiver having an integrated power amplifier Abandoned AU2001290886A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/663,101 2000-09-15
US09/663,101 US6504433B1 (en) 2000-09-15 2000-09-15 CMOS transceiver having an integrated power amplifier
PCT/US2001/028678 WO2002023634A2 (en) 2000-09-15 2001-09-14 Cmos transceiver having an integrated power amplifier

Publications (1)

Publication Number Publication Date
AU2001290886A1 true AU2001290886A1 (en) 2002-03-26

Family

ID=24660475

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001290886A Abandoned AU2001290886A1 (en) 2000-09-15 2001-09-14 Cmos transceiver having an integrated power amplifier

Country Status (7)

Country Link
US (3) US6504433B1 (en)
EP (2) EP3051587B1 (en)
JP (4) JP2004509533A (en)
KR (2) KR100823241B1 (en)
AU (1) AU2001290886A1 (en)
TW (1) TW503611B (en)
WO (1) WO2002023634A2 (en)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7113744B1 (en) 1999-10-21 2006-09-26 Broadcom Corporation Adaptive radio transceiver with a power amplifier
US6504433B1 (en) * 2000-09-15 2003-01-07 Atheros Communications, Inc. CMOS transceiver having an integrated power amplifier
US8149048B1 (en) 2000-10-26 2012-04-03 Cypress Semiconductor Corporation Apparatus and method for programmable power management in a programmable analog circuit block
US7149316B1 (en) * 2000-10-26 2006-12-12 Cypress Semiconductor Corporation Microcontroller having an on-chip high gain amplifier
US8103496B1 (en) 2000-10-26 2012-01-24 Cypress Semicondutor Corporation Breakpoint control in an in-circuit emulation system
US7765095B1 (en) 2000-10-26 2010-07-27 Cypress Semiconductor Corporation Conditional branching in an in-circuit emulation system
US8176296B2 (en) 2000-10-26 2012-05-08 Cypress Semiconductor Corporation Programmable microcontroller architecture
US6724220B1 (en) 2000-10-26 2004-04-20 Cyress Semiconductor Corporation Programmable microcontroller architecture (mixed analog/digital)
US8160864B1 (en) 2000-10-26 2012-04-17 Cypress Semiconductor Corporation In-circuit emulator and pod synchronized boot
US7065155B2 (en) * 2000-12-22 2006-06-20 Atheros Communications, Inc. Method and apparatus for a transceiver having a constant power output
US7406674B1 (en) 2001-10-24 2008-07-29 Cypress Semiconductor Corporation Method and apparatus for generating microcontroller configuration information
US8078970B1 (en) 2001-11-09 2011-12-13 Cypress Semiconductor Corporation Graphical user interface with user-selectable list-box
US8042093B1 (en) 2001-11-15 2011-10-18 Cypress Semiconductor Corporation System providing automatic source code generation for personalization and parameterization of user modules
US7774190B1 (en) 2001-11-19 2010-08-10 Cypress Semiconductor Corporation Sleep and stall in an in-circuit emulation system
US7770113B1 (en) 2001-11-19 2010-08-03 Cypress Semiconductor Corporation System and method for dynamically generating a configuration datasheet
US7844437B1 (en) 2001-11-19 2010-11-30 Cypress Semiconductor Corporation System and method for performing next placements and pruning of disallowed placements for programming an integrated circuit
US6971004B1 (en) 2001-11-19 2005-11-29 Cypress Semiconductor Corp. System and method of dynamically reconfiguring a programmable integrated circuit
US8069405B1 (en) 2001-11-19 2011-11-29 Cypress Semiconductor Corporation User interface for efficiently browsing an electronic document using data-driven tabs
US7088969B2 (en) * 2002-02-12 2006-08-08 Broadcom Corporation Highly linear power amplifier and radio applications thereof
US7251292B2 (en) * 2002-03-21 2007-07-31 Intel Corporation Technique and apparatus for low power wireless communication
US8103497B1 (en) 2002-03-28 2012-01-24 Cypress Semiconductor Corporation External interface for event architecture
US7308608B1 (en) 2002-05-01 2007-12-11 Cypress Semiconductor Corporation Reconfigurable testing system and method
US7761845B1 (en) 2002-09-09 2010-07-20 Cypress Semiconductor Corporation Method for parameterizing a user module
US6750652B2 (en) * 2002-10-22 2004-06-15 Ge Medical Systems Global Technology Company, Llc Integrated quadrature splitter-combiner and balun
US7001479B2 (en) * 2003-04-03 2006-02-21 Ge Medical Systems Global Technology Company, Llc Methods and apparatus for assembling magnetized permanent magnetic blocks
US7071785B2 (en) * 2003-10-22 2006-07-04 Broadcom Corporation Use of a thick oxide device as a cascode for a thin oxide transcoductance device in MOSFET technology and its application to a power amplifier design
GB2412260B (en) * 2004-03-16 2007-09-26 Wolfson Microelectronics Plc Low noise op amp
GB2412259A (en) * 2004-03-16 2005-09-21 Wolfson Ltd A CMOS folded-cascode operational amplifier having low flicker noise
US7295049B1 (en) 2004-03-25 2007-11-13 Cypress Semiconductor Corporation Method and circuit for rapid alignment of signals
US8069436B2 (en) 2004-08-13 2011-11-29 Cypress Semiconductor Corporation Providing hardware independence to automate code generation of processing device firmware
US8286125B2 (en) 2004-08-13 2012-10-09 Cypress Semiconductor Corporation Model for a hardware device-independent method of defining embedded firmware for programmable systems
US20060085276A1 (en) * 2004-10-15 2006-04-20 Johannes Hoech Ecommerce methods and systems
US7920017B2 (en) * 2004-12-16 2011-04-05 Analog Devices, Inc. Programmable clock booster system
US7692489B2 (en) * 2004-12-16 2010-04-06 Analog Devices, Inc. Differential two-stage miller compensated amplifier system with capacitive level shifting
US7332976B1 (en) 2005-02-04 2008-02-19 Cypress Semiconductor Corporation Poly-phase frequency synthesis oscillator
US7176723B2 (en) * 2005-02-18 2007-02-13 Semiconductor Components Industries Llc Translator circuit and method therefor
US7345545B2 (en) * 2005-03-28 2008-03-18 Freescale Semiconductor, Inc. Enhancement mode transceiver and switched gain amplifier integrated circuit
US7504677B2 (en) * 2005-03-28 2009-03-17 Freescale Semiconductor, Inc. Multi-gate enhancement mode RF switch and bias arrangement
US7400183B1 (en) 2005-05-05 2008-07-15 Cypress Semiconductor Corporation Voltage controlled oscillator delay cell and method
US8089461B2 (en) 2005-06-23 2012-01-03 Cypress Semiconductor Corporation Touch wake for electronic devices
US8085067B1 (en) 2005-12-21 2011-12-27 Cypress Semiconductor Corporation Differential-to-single ended signal converter circuit and method
US8380238B2 (en) * 2006-03-15 2013-02-19 Nec Corporation Apparatus for controlling signal-transmission power, mobile station, method of controlling signal-transmission power, and program
US8067948B2 (en) 2006-03-27 2011-11-29 Cypress Semiconductor Corporation Input/output multiplexer bus
US7920090B2 (en) * 2006-04-28 2011-04-05 Infineon Technologies Ag Radar system
JP2008103889A (en) * 2006-10-18 2008-05-01 Niigata Seimitsu Kk Low-noise amplifier
US9564902B2 (en) 2007-04-17 2017-02-07 Cypress Semiconductor Corporation Dynamically configurable and re-configurable data path
US8130025B2 (en) 2007-04-17 2012-03-06 Cypress Semiconductor Corporation Numerical band gap
US8040266B2 (en) 2007-04-17 2011-10-18 Cypress Semiconductor Corporation Programmable sigma-delta analog-to-digital converter
US8026739B2 (en) 2007-04-17 2011-09-27 Cypress Semiconductor Corporation System level interconnect with programmable switching
US7737724B2 (en) 2007-04-17 2010-06-15 Cypress Semiconductor Corporation Universal digital block interconnection and channel routing
US8516025B2 (en) 2007-04-17 2013-08-20 Cypress Semiconductor Corporation Clock driven dynamic datapath chaining
US8092083B2 (en) 2007-04-17 2012-01-10 Cypress Semiconductor Corporation Temperature sensor with digital bandgap
US9720805B1 (en) 2007-04-25 2017-08-01 Cypress Semiconductor Corporation System and method for controlling a target device
US8266575B1 (en) 2007-04-25 2012-09-11 Cypress Semiconductor Corporation Systems and methods for dynamically reconfiguring a programmable system on a chip
US8065653B1 (en) 2007-04-25 2011-11-22 Cypress Semiconductor Corporation Configuration of programmable IC design elements
US8340598B2 (en) * 2007-05-17 2012-12-25 Qualcomm Atheros, Inc. Dual mode power amplifier
US7489202B1 (en) 2007-08-20 2009-02-10 Freescale Semiconductor, Inc. RF amplifier with stacked transistors, transmitting device, and method therefor
US8049569B1 (en) 2007-09-05 2011-11-01 Cypress Semiconductor Corporation Circuit and method for improving the accuracy of a crystal-less oscillator having dual-frequency modes
US20090088121A1 (en) * 2007-09-27 2009-04-02 Nanoamp Solutions Inc. (Cayman) High Linearity and Low Noise Mixer
US20090274185A1 (en) * 2008-05-02 2009-11-05 Microvision, Inc. Laser Drive Amplifier
US9448964B2 (en) 2009-05-04 2016-09-20 Cypress Semiconductor Corporation Autonomous control in a programmable system
US8903332B2 (en) * 2009-06-23 2014-12-02 Silicon Laboratories Inc. Circuit device and method of coupling to an antenna
US8330547B2 (en) * 2009-06-30 2012-12-11 Qualcomm, Incorporated Gain control linearity in an RF driver amplifier transmitter
US9048890B1 (en) * 2009-12-18 2015-06-02 Maxim Integrated Products, Inc. Transmitter circuit with integrated power control
TWI435541B (en) 2010-09-07 2014-04-21 Realtek Semiconductor Corp Power amplifier and method for controlling power amplifier
US9437555B2 (en) * 2011-06-07 2016-09-06 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering
CN103326737B (en) * 2012-03-22 2015-05-27 民瑞科技股份有限公司 Digital wireless communication transceiver module
US9681389B2 (en) 2013-02-15 2017-06-13 The Regents Of The University Of Michigan Integrated ultra wideband transceiver
JP6272102B2 (en) * 2014-03-27 2018-01-31 三菱電機株式会社 Cascode amplifier
CN106575975B (en) * 2014-08-25 2019-08-02 瑞萨电子株式会社 Semiconductor devices
US10547343B2 (en) * 2015-02-05 2020-01-28 Maxlinear, Inc. Satellite communications system using transceiver arrays
WO2017162269A1 (en) 2016-03-22 2017-09-28 Telefonaktiebolaget Lm Ericsson (Publ) Low power high speed interface
US10340289B2 (en) 2017-04-28 2019-07-02 Qualcomm Incorporated Cascode radio frequency (RF) power amplifier on single diffusion
RU2741056C1 (en) * 2020-09-01 2021-01-22 федеральное государственное бюджетное образовательное учреждение высшего образования «Донской государственный технический университет» (ДГТУ) Radiation-resistant and low-temperature operational amplifier on complementary field-effect transistors
US20240171131A1 (en) * 2022-11-21 2024-05-23 National Cheng Kung University Level-shifting amplifier with gain error reduction

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840386A (en) * 1971-09-18 1973-06-13
US4003071A (en) 1971-09-18 1977-01-11 Fujitsu Ltd. Method of manufacturing an insulated gate field effect transistor
JPS5124160A (en) * 1974-08-21 1976-02-26 Nippon Musical Instruments Mfg
JPS525254A (en) * 1975-07-02 1977-01-14 Hitachi Ltd High voltage resistance mis switching circuit
JPS6141292Y2 (en) * 1981-09-24 1986-11-25
US4479094A (en) * 1982-05-26 1984-10-23 Raytheon Company Differential amplifier
US4520324A (en) 1983-03-11 1985-05-28 National Semiconductor Corporation MOS Gain controlled amplifier
JPS6020559A (en) * 1983-07-15 1985-02-01 Hitachi Ltd Composite semiconductor device
JPS60229404A (en) * 1984-04-26 1985-11-14 Toshiba Corp Amplifier circuit
US4697153A (en) 1986-09-18 1987-09-29 Standard Microsystems Corp. Cascode auto bias circuit
JPH0533061Y2 (en) * 1987-05-15 1993-08-24
JPH01254014A (en) 1988-04-04 1989-10-11 Toshiba Corp Power amplifier
JP2821158B2 (en) * 1989-02-10 1998-11-05 株式会社日立製作所 Integrated high frequency amplifier
US4975761A (en) * 1989-09-05 1990-12-04 Advanced Micro Devices, Inc. High performance plastic encapsulated package for integrated circuit die
JP3366356B2 (en) * 1991-11-26 2003-01-14 シチズン時計株式会社 Semiconductor memory device and writing method thereof
JPH0738337A (en) * 1993-07-20 1995-02-07 Hitachi Ltd Low distortion cascade circuit
JP3043250B2 (en) * 1993-12-27 2000-05-22 ヒュンダイ エレクトロニクス アメリカ Analog output drive circuit for gate array
JP3219346B2 (en) * 1994-02-18 2001-10-15 アルプス電気株式会社 Automatic gain control amplifier
US5600275A (en) * 1994-04-29 1997-02-04 Analog Devices, Inc. Low-voltage CMOS comparator with offset cancellation
EP0690561B1 (en) * 1994-06-30 2001-10-31 STMicroelectronics S.r.l. Method for erasing a common mode current signal and transconductor assembly using such method
JP3395068B2 (en) * 1994-08-15 2003-04-07 日本電信電話株式会社 Monolithically integrated FET power amplifier
JP3243151B2 (en) * 1995-06-01 2002-01-07 東芝マイクロエレクトロニクス株式会社 Method for manufacturing semiconductor device
US5789799A (en) * 1996-09-27 1998-08-04 Northern Telecom Limited High frequency noise and impedance matched integrated circuits
JPH10145148A (en) * 1996-11-11 1998-05-29 Yamaha Corp Negative feedback circuit
JP3430415B2 (en) * 1997-05-30 2003-07-28 横河電機株式会社 Differential amplifier
US5886577A (en) * 1997-07-28 1999-03-23 Motorola, Inc. Apparatus for efficient current amplification
JPH11177349A (en) * 1997-12-16 1999-07-02 Matsushita Electric Ind Co Ltd Power amplifier
JPH11196139A (en) * 1997-12-26 1999-07-21 Seiko Epson Corp Transmitter, receiver, and transmitter-receiver
JPH11205123A (en) * 1998-01-20 1999-07-30 Toshiba Corp High withstand voltage power integrated circuit
JP3370922B2 (en) * 1998-02-19 2003-01-27 三菱電機株式会社 High frequency circuit device
JP3875392B2 (en) 1998-02-23 2007-01-31 株式会社東芝 Operational amplifier
AU4397699A (en) * 1998-07-07 2000-01-24 Matsushita Electric Industrial Co., Ltd. Semiconductor amplifier circuit and system
US6094084A (en) * 1998-09-04 2000-07-25 Nortel Networks Corporation Narrowband LC folded cascode structure
JP3731358B2 (en) 1998-09-25 2006-01-05 株式会社村田製作所 High frequency power amplifier circuit
JP2000121356A (en) * 1998-10-09 2000-04-28 Asahi Optical Co Ltd Target for photographic survey
JP3739224B2 (en) * 1998-12-22 2006-01-25 株式会社ルネサステクノロジ Differential amplifier
JP3626043B2 (en) * 1999-08-10 2005-03-02 沖電気工業株式会社 Operational amplifier
US6504433B1 (en) * 2000-09-15 2003-01-07 Atheros Communications, Inc. CMOS transceiver having an integrated power amplifier

Also Published As

Publication number Publication date
JP2014030197A (en) 2014-02-13
JP2004509533A (en) 2004-03-25
US6504433B1 (en) 2003-01-07
TW503611B (en) 2002-09-21
KR20080003938A (en) 2008-01-08
JP5389989B2 (en) 2014-01-15
KR20030082540A (en) 2003-10-22
US6850117B2 (en) 2005-02-01
WO2002023634A2 (en) 2002-03-21
JP6046004B2 (en) 2016-12-14
US20020105380A1 (en) 2002-08-08
EP1317776A2 (en) 2003-06-11
US20030155976A1 (en) 2003-08-21
WO2002023634A9 (en) 2003-04-03
KR100823241B1 (en) 2008-04-18
JP2012239189A (en) 2012-12-06
EP3051587B1 (en) 2018-12-12
KR100829200B1 (en) 2008-05-13
EP3051587A1 (en) 2016-08-03
EP1317776B1 (en) 2016-03-09
WO2002023634A3 (en) 2002-06-20
JP2015201865A (en) 2015-11-12
US6504431B2 (en) 2003-01-07

Similar Documents

Publication Publication Date Title
AU2001290886A1 (en) Cmos transceiver having an integrated power amplifier
AU2002367231A1 (en) Power amplifier
AU2001228678A1 (en) Amplifier arrangement
AU2001236895A1 (en) Integrated circuit
AU2001227916A1 (en) Earplug
AU2001255213A1 (en) Low-power cdma receiver
AU2001222241A1 (en) Laser machinning device
AU2002348890A1 (en) Switched mode power amplifier
AU2001292953A1 (en) Mmic folded power amplifier
AU2001289424A1 (en) Laser device
AU2002223882A1 (en) Amplifier circuit
AU2001280590A1 (en) 5-substituted 2-aryl-4-pyrimidinones
GB0121390D0 (en) Power amplifier
AU2001232092A1 (en) Amplifier
AU5670201A (en) Transceiver
AUPR752101A0 (en) Amplifier improvements
AU2001267589A1 (en) Cycloalkyl - or cycloalkylmethyl-substituted 6-phenylphenanthridines
AU2002227520A1 (en) Improved semiconductor laser
AU2001292079A1 (en) Raman amplification
AU2000241402A1 (en) Securing an enclosed area
AU2002329870A1 (en) N way cancellation coupler for power amplifier
AU2001276507A1 (en) Power amplifier arrangement
AU2002348869A1 (en) Integrated circuit with an amplifier
AU2001250569A1 (en) An account
AU2001232519A1 (en) Drawbar