JP2012164994A5 - - Google Patents

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Publication number
JP2012164994A5
JP2012164994A5 JP2012081726A JP2012081726A JP2012164994A5 JP 2012164994 A5 JP2012164994 A5 JP 2012164994A5 JP 2012081726 A JP2012081726 A JP 2012081726A JP 2012081726 A JP2012081726 A JP 2012081726A JP 2012164994 A5 JP2012164994 A5 JP 2012164994A5
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JP
Japan
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gate
field plate
dielectric material
field
connection
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JP2012081726A
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Japanese (ja)
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JP2012164994A (ja
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JP2012081726A 2003-09-09 2012-03-30 シングルゲートまたはマルチゲートフィールドプレート製造 Withdrawn JP2012164994A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50155703P 2003-09-09 2003-09-09
US60/501,557 2003-09-10

Related Parent Applications (1)

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JP2006525544A Division JP2007505483A (ja) 2003-09-09 2004-09-09 シングルゲートまたはマルチゲートフィールドプレート製造

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JP2012164994A JP2012164994A (ja) 2012-08-30
JP2012164994A5 true JP2012164994A5 (enExample) 2013-07-18

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JP2006525544A Pending JP2007505483A (ja) 2003-09-09 2004-09-09 シングルゲートまたはマルチゲートフィールドプレート製造
JP2011229873A Withdrawn JP2012044207A (ja) 2003-09-09 2011-10-19 シングルゲートまたはマルチゲートフィールドプレート製造
JP2012081726A Withdrawn JP2012164994A (ja) 2003-09-09 2012-03-30 シングルゲートまたはマルチゲートフィールドプレート製造

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JP2006525544A Pending JP2007505483A (ja) 2003-09-09 2004-09-09 シングルゲートまたはマルチゲートフィールドプレート製造
JP2011229873A Withdrawn JP2012044207A (ja) 2003-09-09 2011-10-19 シングルゲートまたはマルチゲートフィールドプレート製造

Country Status (8)

Country Link
US (3) US7812369B2 (enExample)
EP (2) EP1665358B1 (enExample)
JP (3) JP2007505483A (enExample)
KR (1) KR101128376B1 (enExample)
CN (1) CN100541745C (enExample)
CA (1) CA2538077C (enExample)
TW (3) TWI430341B (enExample)
WO (1) WO2005024909A2 (enExample)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI430341B (zh) * 2003-09-09 2014-03-11 Univ California 單一或多重閘極場平板之製造
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US20050218414A1 (en) * 2004-03-30 2005-10-06 Tetsuzo Ueda 4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US7161194B2 (en) 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2006286698A (ja) * 2005-03-31 2006-10-19 Furukawa Electric Co Ltd:The 電子デバイス及び電力変換装置
US20060223293A1 (en) * 2005-04-01 2006-10-05 Raytheon Company Semiconductor devices having improved field plates
WO2006132419A1 (ja) * 2005-06-10 2006-12-14 Nec Corporation 電界効果トランジスタ
US7863648B2 (en) 2005-06-10 2011-01-04 Nec Corporation Field effect transistor
WO2007059220A2 (en) * 2005-11-15 2007-05-24 The Regents Of The University Of California Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7566918B2 (en) 2006-02-23 2009-07-28 Cree, Inc. Nitride based transistors for millimeter wave operation
US7388236B2 (en) 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
JP5217151B2 (ja) * 2006-08-25 2013-06-19 日亜化学工業株式会社 電界効果トランジスタ及びその製造方法
KR100782430B1 (ko) * 2006-09-22 2007-12-05 한국과학기술원 고전력을 위한 내부전계전극을 갖는 갈륨나이트라이드기반의 고전자 이동도 트랜지스터 구조
JP5105160B2 (ja) 2006-11-13 2012-12-19 クリー インコーポレイテッド トランジスタ
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US7501670B2 (en) * 2007-03-20 2009-03-10 Velox Semiconductor Corporation Cascode circuit employing a depletion-mode, GaN-based FET
WO2009116015A1 (en) * 2008-03-20 2009-09-24 Nxp B.V. Finfet transistor with high-voltage capability and cmos-compatible method for fabricating the same
JP5499441B2 (ja) * 2008-04-01 2014-05-21 沖電気工業株式会社 半導体装置及びその製造方法
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8829999B2 (en) 2010-05-20 2014-09-09 Cree, Inc. Low noise amplifiers including group III nitride based high electron mobility transistors
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
CN102201442B (zh) * 2011-04-02 2014-06-18 中国科学院苏州纳米技术与纳米仿生研究所 基于沟道阵列结构的异质结场效应晶体管
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
WO2014050054A1 (ja) * 2012-09-28 2014-04-03 パナソニック株式会社 半導体装置
JP6522521B2 (ja) 2013-02-15 2019-05-29 トランスフォーム インコーポレーテッド 半導体デバイスの電極及びその製造方法
JP2014165280A (ja) * 2013-02-22 2014-09-08 Toshiba Corp 半導体装置
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245992B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9847411B2 (en) * 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9407214B2 (en) 2013-06-28 2016-08-02 Cree, Inc. MMIC power amplifier
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
US20150171860A1 (en) * 2013-11-13 2015-06-18 Skyworks Solutions, Inc. Circuits and methods for improved quality factor in a stack of transistors
US9093394B1 (en) * 2013-12-16 2015-07-28 Hrl Laboratories, Llc Method and structure for encapsulation and interconnection of transistors
JP2015195288A (ja) * 2014-03-31 2015-11-05 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
CN104332498B (zh) * 2014-09-01 2018-01-05 苏州捷芯威半导体有限公司 一种斜场板功率器件及斜场板功率器件的制备方法
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US10056478B2 (en) * 2015-11-06 2018-08-21 Taiwan Semiconductor Manufacturing Company Ltd. High-electron-mobility transistor and manufacturing method thereof
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
US9722063B1 (en) 2016-04-11 2017-08-01 Power Integrations, Inc. Protective insulator for HFET devices
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
US11430882B2 (en) 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US10354879B2 (en) 2016-06-24 2019-07-16 Cree, Inc. Depletion mode semiconductor devices including current dependent resistance
US10840334B2 (en) 2016-06-24 2020-11-17 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10192980B2 (en) 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
KR20180068172A (ko) * 2016-12-13 2018-06-21 (주)웨이비스 고전자이동도 트랜지스터 및 그 제조방법
CN107170797B (zh) * 2017-03-29 2020-04-14 西安电子科技大学 基于漏场板的电流孔径异质结晶体管及其制作方法
US12230699B2 (en) 2019-10-23 2025-02-18 Analog Devices, Inc. Modification of electric fields of compound semiconductor devices
CN117976705A (zh) 2019-10-30 2024-05-03 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
TWI812805B (zh) 2019-11-05 2023-08-21 聯華電子股份有限公司 高電子遷移率電晶體及其製作方法
FR3105580A1 (fr) * 2019-12-20 2021-06-25 Thales Transistor hemt ameliore
US11257940B2 (en) 2020-01-14 2022-02-22 Cree, Inc. Group III HEMT and capacitor that share structural features
US11424356B2 (en) 2020-03-16 2022-08-23 Raytheon Company Transistor having resistive field plate
US11228287B2 (en) 2020-06-17 2022-01-18 Cree, Inc. Multi-stage decoupling networks integrated with on-package impedance matching networks for RF power amplifiers
US11316019B2 (en) 2020-07-29 2022-04-26 Globalfoundries U.S. Inc. Symmetric arrangement of field plates in semiconductor devices
US12408403B2 (en) * 2020-10-27 2025-09-02 Macom Technology Solutions Holdings, Inc. Field effect transistor with stacked unit subcell structure
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
US12342560B2 (en) 2021-12-20 2025-06-24 Nxp Usa, Inc. Transistors with source-connected field plates
US12349433B2 (en) 2021-12-20 2025-07-01 Nxp Usa, Inc. Transistors with self-aligned source-connected field plates
US12148820B2 (en) 2021-12-20 2024-11-19 Nxp B.V. Transistors with source-connected field plates
US12191383B2 (en) 2021-12-24 2025-01-07 Nxp Usa, Inc. Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication therefor
JP2023132608A (ja) 2022-03-11 2023-09-22 住友電気工業株式会社 半導体装置の製造方法
US20250089290A1 (en) * 2023-09-13 2025-03-13 Soctera, Inc. Current collapse reduction using aluminum nitride back barrier and in-situ two-step passivation

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL37300C (enExample) 1933-06-27
JPS5893377A (ja) 1981-11-30 1983-06-03 Fujitsu Ltd 半導体装置の製造方法
US4999682A (en) * 1987-08-14 1991-03-12 Regents Of The University Of Minnesota Electronic and optoelectronic laser devices utilizing light hole properties
JPH04162633A (ja) 1990-10-26 1992-06-08 Fuji Xerox Co Ltd 薄膜トランジスタ
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
JP3098773B2 (ja) 1991-03-18 2000-10-16 トラスティーズ・オブ・ボストン・ユニバーシティ 高絶縁性単結晶窒化ガリウム薄膜の作製及びドープ方法
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3135939B2 (ja) * 1991-06-20 2001-02-19 富士通株式会社 Ｈｅｍｔ型半導体装置
JPH05326563A (ja) * 1992-05-21 1993-12-10 Toshiba Corp 半導体装置
JPH06124965A (ja) 1992-10-09 1994-05-06 Sumitomo Electric Ind Ltd 電界効果トランジスタ
JPH06163600A (ja) 1992-11-26 1994-06-10 Nec Corp 電界効果トランジスタ
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6002148A (en) * 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
KR0167273B1 (ko) 1995-12-02 1998-12-15 문정환 고전압 모스전계효과트렌지스터의 구조 및 그 제조방법
JPH09232827A (ja) * 1996-02-21 1997-09-05 Oki Electric Ind Co Ltd 半導体装置及び送受信切り替え型アンテナスイッチ回路
JP3616447B2 (ja) * 1996-02-27 2005-02-02 富士通株式会社 半導体装置
US6316820B1 (en) * 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
DE19800647C1 (de) * 1998-01-09 1999-05-27 Siemens Ag SOI-Hochspannungsschalter
TW373247B (en) 1998-04-02 1999-11-01 Taiwan Semiconductor Mfg Co Ltd Contact face having uplift and delay S/D and stock silicon gate electrode P type gold oxygen semi-field effect transistor forming method
JP3534624B2 (ja) * 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
US6009023A (en) 1998-05-26 1999-12-28 Etron Technology, Inc. High performance DRAM structure employing multiple thickness gate oxide
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP3111985B2 (ja) * 1998-06-16 2000-11-27 日本電気株式会社 電界効果型トランジスタ
JP2000082671A (ja) 1998-06-26 2000-03-21 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法
JP3180776B2 (ja) 1998-09-22 2001-06-25 日本電気株式会社 電界効果型トランジスタ
JP3271613B2 (ja) * 1999-05-06 2002-04-02 日本電気株式会社 電界効果トランジスタ
TW517260B (en) 1999-05-15 2003-01-11 Semiconductor Energy Lab Semiconductor device and method for its fabrication
JP2001085670A (ja) 1999-09-14 2001-03-30 Nec Corp 電界効果型トランジスタ及びその製造方法
US6774449B1 (en) 1999-09-16 2004-08-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP3344416B2 (ja) 1999-09-16 2002-11-11 松下電器産業株式会社 半導体装置およびその製造方法
JP4592938B2 (ja) 1999-12-08 2010-12-08 パナソニック株式会社 半導体装置
US6639255B2 (en) * 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP2001237250A (ja) * 2000-02-22 2001-08-31 Nec Corp 半導体装置
JP2001326335A (ja) * 2000-05-18 2001-11-22 Nec Corp 電界効果トランジスタ
JP4186032B2 (ja) 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
JP4198339B2 (ja) 2000-07-17 2008-12-17 ユーディナデバイス株式会社 化合物半導体装置
TWI257179B (en) * 2000-07-17 2006-06-21 Fujitsu Quantum Devices Ltd High-speed compound semiconductor device operable at large output power with minimum leakage current
US6690042B2 (en) * 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
JP2002118122A (ja) * 2000-10-06 2002-04-19 Nec Corp ショットキゲート電界効果トランジスタ
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
TW466747B (en) 2000-12-14 2001-12-01 United Microelectronics Corp Using inner field ring and complex multiple field plates to reduce surface breakdown of power LDMOSFET
JP2001230263A (ja) * 2001-01-29 2001-08-24 Nec Corp 電界効果型トランジスタ
JP2002270830A (ja) * 2001-03-12 2002-09-20 Fuji Electric Co Ltd 半導体装置
JP4220683B2 (ja) 2001-03-27 2009-02-04 パナソニック株式会社 半導体装置
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
JP3744381B2 (ja) 2001-05-17 2006-02-08 日本電気株式会社 電界効果型トランジスタ
WO2003032397A2 (en) * 2001-07-24 2003-04-17 Cree, Inc. INSULTING GATE AlGaN/GaN HEMT
JP2003059948A (ja) 2001-08-20 2003-02-28 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2003100778A (ja) 2001-09-26 2003-04-04 Toshiba Corp 半導体装置
TW511190B (en) 2001-11-09 2002-11-21 Macronix Int Co Ltd Non-volatile semiconductor memory device with multi-layer gate insulating structure
JP4117535B2 (ja) * 2001-11-30 2008-07-16 信越半導体株式会社 化合物半導体素子
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
TW200305283A (en) * 2001-12-06 2003-10-16 Hrl Lab Llc High power-low noise microwave GaN heterojunction field effet transistor
US6955858B2 (en) * 2001-12-07 2005-10-18 North Carolina State University Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
JP3705431B2 (ja) * 2002-03-28 2005-10-12 ユーディナデバイス株式会社 半導体装置及びその製造方法
US6559513B1 (en) * 2002-04-22 2003-05-06 M/A-Com, Inc. Field-plate MESFET
US6893947B2 (en) * 2002-06-25 2005-05-17 Freescale Semiconductor, Inc. Advanced RF enhancement-mode FETs with improved gate properties
JP3790500B2 (ja) * 2002-07-16 2006-06-28 ユーディナデバイス株式会社 電界効果トランジスタ及びその製造方法
US6740535B2 (en) 2002-07-29 2004-05-25 International Business Machines Corporation Enhanced T-gate structure for modulation doped field effect transistors
US6933544B2 (en) 2003-01-29 2005-08-23 Kabushiki Kaisha Toshiba Power semiconductor device
US7126426B2 (en) * 2003-09-09 2006-10-24 Cree, Inc. Cascode amplifier structures including wide bandgap field effect transistor with field plates
US7501669B2 (en) * 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
TWI430341B (zh) * 2003-09-09 2014-03-11 Univ California 單一或多重閘極場平板之製造
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US7692263B2 (en) * 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors

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