JP2012150875A - 信号処理回路 - Google Patents
信号処理回路 Download PDFInfo
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- JP2012150875A JP2012150875A JP2011274252A JP2011274252A JP2012150875A JP 2012150875 A JP2012150875 A JP 2012150875A JP 2011274252 A JP2011274252 A JP 2011274252A JP 2011274252 A JP2011274252 A JP 2011274252A JP 2012150875 A JP2012150875 A JP 2012150875A
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- Prior art keywords
- transistor
- oxide semiconductor
- data
- film
- storage device
- Prior art date
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- 238000012545 processing Methods 0.000 title claims abstract description 109
- 239000004065 semiconductor Substances 0.000 claims abstract description 360
- 238000003860 storage Methods 0.000 claims abstract description 115
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 42
- 239000003990 capacitor Substances 0.000 claims description 40
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 34
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 239000010408 film Substances 0.000 description 616
- 239000010410 layer Substances 0.000 description 89
- 238000000034 method Methods 0.000 description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 64
- 239000011701 zinc Substances 0.000 description 63
- 229910052760 oxygen Inorganic materials 0.000 description 59
- 239000001301 oxygen Substances 0.000 description 58
- 239000000758 substrate Substances 0.000 description 58
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 57
- 230000002829 reductive effect Effects 0.000 description 57
- 238000010438 heat treatment Methods 0.000 description 50
- 239000012535 impurity Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 42
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- 239000002019 doping agent Substances 0.000 description 24
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- 238000010586 diagram Methods 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 22
- 238000005530 etching Methods 0.000 description 20
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- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 16
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- -1 In—Zn oxide Chemical class 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
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- 239000001307 helium Substances 0.000 description 6
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- 238000005468 ion implantation Methods 0.000 description 6
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- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 5
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- 238000001312 dry etching Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 239000003381 stabilizer Substances 0.000 description 5
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 4
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- 239000012300 argon atmosphere Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
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- 238000004151 rapid thermal annealing Methods 0.000 description 4
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- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 3
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
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- 229910021529 ammonia Inorganic materials 0.000 description 3
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- 238000006243 chemical reaction Methods 0.000 description 3
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- 150000004678 hydrides Chemical class 0.000 description 3
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
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- 238000003491 array Methods 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- G11—INFORMATION STORAGE
- G11C—STATIC STORES
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- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
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- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
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Abstract
【解決手段】制御装置と、演算装置と、緩衝記憶装置とを有し、緩衝記憶装置は、主記憶装置から、或いは演算装置から送られてきたデータを、制御装置からの命令に従って記憶し、緩衝記憶装置は複数のメモリセルを有し、メモリセルは、チャネル形成領域に酸化物半導体を含むトランジスタと、トランジスタを介してデータの値に従った量の電荷が供給される記憶素子とを有する信号処理回路。
【選択図】図1
Description
本発明の一態様に係る信号処理回路は、制御装置と、一または複数の演算装置と、一または複数の緩衝記憶装置とを少なくとも有する。図1(A)に、本発明の一態様に係る信号処理回路100の一例を示す。図1(A)に示す信号処理回路100は、制御装置101、演算装置102、緩衝記憶装置103、主記憶装置104を有する。
記憶装置の、駆動回路の具体的な構成の一例について説明する。
本実施の形態では、読み出し回路の具体的な構成の一例について説明する。
本実施の形態では、本発明の信号処理回路の具体的な一形態について説明する。図9に、信号処理回路の構成をブロックで一例として示す。
緩衝記憶装置は、特定の情報量を格納するキャッシュラインを複数有している。そして、各キャッシュラインは、データフィールドと呼ばれるメモリ領域と、タグと呼ばれるメモリ領域と、バリッドビットと呼ばれるメモリ領域とを含む。
本実施の形態では、図2(C)に示したメモリセル105において、トランジスタ107の活性層に酸化物半導体を用い、トランジスタ123の活性層にシリコンを用いる場合を例に挙げて、記憶装置の作製方法について説明する。
本実施の形態では、実施の形態6とは異なる構造を有した、酸化物半導体膜を用いたトランジスタについて説明する。
本発明の一態様に係る信号処理回路を、携帯電話、スマートフォン、電子書籍などの携帯用の電子機器に応用した場合について説明する。一般的な携帯用の電子機器においては、画像データを一時的に記憶する場合などにSRAMまたはDRAMが使用されている。SRAMまたはDRAMが使用される理由として、フラッシュメモリなどに比べて書き込みや読み出しなどの応答速度が速く、画像データの処理を行う際に用いるのに適しているからである。
本実施の形態では、記憶装置の構造の一形態について説明する。
101 制御装置
102 演算装置
103 緩衝記憶装置
104 主記憶装置
105 メモリセル
106 記憶素子
107 トランジスタ
110 基板
111 ゲート電極
112 絶縁膜
113 酸化物半導体膜
114 ソース電極
115 ドレイン電極
116 絶縁膜
120 容量素子
121 トランジスタ
122 容量素子
123 トランジスタ
124 容量素子
125 トランジスタ
126 トランジスタ
127 トランジスタ
128 トランジスタ
129 トランジスタ
130 トランジスタ
131 ダイオード
200 セルアレイ
260 トランジスタ
261 トランジスタ
262 オペアンプ
300 セルアレイ
401 トランジスタ
403 トランジスタ
404 トランジスタ
405 トランジスタ
406 トランジスタ
407 Xデコーダ
408 Yデコーダ
411 トランジスタ
412 容量素子
413 Xデコーダ
414 Yデコーダ
421 RF回路
422 アナログベースバンド回路
423 デジタルベースバンド回路
424 バッテリー
425 電源回路
426 アプリケーションプロセッサ
427 CPU
428 DSP
429 インターフェース
430 フラッシュメモリ
431 ディスプレイコントローラ
432 メモリ回路
433 ディスプレイ
434 表示部
435 ソースドライバ
436 ゲートドライバ
437 音声回路
438 キーボード
439 タッチセンサ
441 メモリコントローラ
442 記憶装置
443 記憶装置
444 スイッチ
445 スイッチ
451 バッテリー
452 電源回路
453 マイクロプロセッサ
454 フラッシュメモリ
455 音声回路
456 キーボード
457 メモリ回路
458 タッチパネル
459 ディスプレイ
460 ディスプレイコントローラ
467 CPU
468 DSP
469 インターフェース
600 信号処理回路
601 制御装置
602 ALU
603 データキャッシュ
604 命令キャッシュ
605 プログラムカウンタ
606 命令レジスタ
607 主記憶装置
608 レジスタファイル
700 基板
701 絶縁膜
702 半導体膜
703 ゲート絶縁膜
704 不純物領域
705 マスク
706 開口部
707 ゲート電極
708 導電膜
709 不純物領域
710 チャネル形成領域
711 不純物領域
712 絶縁膜
713 絶縁膜
716 酸化物半導体膜
719 導電膜
720 導電膜
721 ゲート絶縁膜
722 ゲート電極
723 導電膜
724 絶縁膜
725 開口部
726 配線
727 絶縁膜
800 記憶装置
801 セルアレイ
802 駆動回路
803 回路
804 ワード線駆動回路
805 データ線駆動回路
806 制御回路
807 デコーダ
808 レベルシフタ
809 バッファ
810 デコーダ
811 レベルシフタ
812 セレクタ
901 トランジスタ
902 絶縁膜
903 酸化物半導体膜
904 ソース電極
905 ドレイン電極
906 ゲート絶縁膜
907 ゲート電極
908 高濃度領域
909 チャネル形成領域
911 トランジスタ
912 絶縁膜
913 酸化物半導体膜
914 ソース電極
915 ドレイン電極
916 ゲート絶縁膜
917 ゲート電極
918 高濃度領域
919 チャネル形成領域
921 トランジスタ
922 絶縁膜
923 酸化物半導体膜
924 ソース電極
925 ドレイン電極
926 ゲート絶縁膜
927 ゲート電極
928 高濃度領域
929 低濃度領域
930 サイドウォール
931 チャネル形成領域
941 トランジスタ
942 絶縁膜
943 酸化物半導体膜
944 ソース電極
945 ドレイン電極
946 ゲート絶縁膜
947 ゲート電極
948 高濃度領域
949 低濃度領域
950 サイドウォール
951 チャネル形成領域
3000 基板
3001 トランジスタ
3003a 電極
3003b 電極
3003c 電極
3004 論理回路
3100a 配線
3100b 配線
3100c 配線
3100d 配線
3106 素子分離絶縁膜
3140a 絶縁膜
3140b 絶縁膜
3141a 絶縁膜
3141b 絶縁膜
3142a 絶縁膜
3142b 絶縁膜
3170a メモリセル
3170b メモリセル
3171a トランジスタ
3171b トランジスタ
3303 電極
3503 電極
3505 電極
3501a 電極
3501b 電極
3501c 電極
3502a 電極
3502b 電極
3502c 電極
3503a 電極
3503b 電極
7001 筐体
7002 表示部
7011 筐体
7012 表示部
7013 支持台
7021 筐体
7022 表示部
7031 筐体
7032 筐体
7033 表示部
7034 表示部
7035 マイクロホン
7036 スピーカー
7037 操作キー
7038 スタイラス
7041 筐体
7042 表示部
7043 音声入力部
7044 音声出力部
7045 操作キー
7046 受光部
7051 筐体
7052 表示部
7053 操作キー
Claims (9)
- 制御装置と、演算装置と、緩衝記憶装置とを有し、
前記緩衝記憶装置は、主記憶装置から、或いは前記演算装置から送られてきたデータを、前記制御装置からの命令に従って記憶し、
前記緩衝記憶装置は複数のメモリセルを有し、
前記メモリセルは、チャネル形成領域に酸化物半導体を含むトランジスタと、前記トランジスタを介して前記データの値に従った量の電荷が供給される記憶素子とを有する信号処理回路。 - 制御装置と、演算装置と、緩衝記憶装置と、主記憶装置とを有し、
前記緩衝記憶装置は、前記主記憶装置から、或いは前記演算装置から送られてきたデータを、前記制御装置からの命令に従って記憶し、
前記緩衝記憶装置は複数のメモリセルを有し、
前記メモリセルは、チャネル形成領域に酸化物半導体を含むトランジスタと、前記トランジスタを介して前記データの値に従った量の電荷が供給される記憶素子とを有する信号処理回路。 - 制御装置と、演算装置と、緩衝記憶装置とを有し、
前記緩衝記憶装置は、主記憶装置から送られてきた命令を含むデータを記憶し、
前記制御装置は、前記緩衝記憶装置から前記データを読み出し、前記命令に従って前記演算装置及び前記緩衝記憶装置の動作を制御し、
前記緩衝記憶装置は複数のメモリセルを有し、
前記メモリセルは、チャネル形成領域に酸化物半導体を含むトランジスタと、前記トランジスタを介して前記データの値に従った量の電荷が供給される記憶素子とを有する信号処理回路。 - 制御装置と、演算装置と、緩衝記憶装置と、主記憶装置とを有し、
前記緩衝記憶装置は、前記主記憶装置から送られてきた命令を含むデータを記憶し、
前記制御装置は、前記緩衝記憶装置から前記データを読み出し、前記命令に従って前記演算装置及び前記緩衝記憶装置の動作を制御し、
前記緩衝記憶装置は複数のメモリセルを有し、
前記メモリセルは、チャネル形成領域に酸化物半導体を含むトランジスタと、前記トランジスタを介して前記データの値に従った量の電荷が供給される記憶素子とを有する信号処理回路。 - 請求項1乃至請求項4のいずれか1項において、
前記トランジスタのオフ電流密度は、100zA/μm以下である信号処理回路。 - 請求項1乃至請求項5のいずれか1項において、
前記記憶素子は、トランジスタまたは容量素子である信号処理回路。 - 請求項1乃至請求項6のいずれか1項において、
前記酸化物半導体は、In、Ga、及びZnを含む酸化物半導体である信号処理回路。 - 請求項1乃至請求項7のいずれか1項において、
前記チャネル形成領域の水素濃度は、5×1018/cm3未満である信号処理回路。 - 請求項1乃至請求項8のいずれか1項において、CPU、DSP、またはマイクロコントローラを含むLSIである信号処理回路。
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Also Published As
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US20120163071A1 (en) | 2012-06-28 |
US20140211558A1 (en) | 2014-07-31 |
TWI529531B (zh) | 2016-04-11 |
KR20120075411A (ko) | 2012-07-06 |
JP6030298B2 (ja) | 2016-11-24 |
KR101931931B1 (ko) | 2018-12-24 |
JP2017059291A (ja) | 2017-03-23 |
KR101987638B1 (ko) | 2019-06-12 |
JP6392824B2 (ja) | 2018-09-19 |
KR20180134815A (ko) | 2018-12-19 |
TW201248408A (en) | 2012-12-01 |
US9093136B2 (en) | 2015-07-28 |
US8687416B2 (en) | 2014-04-01 |
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