JP2012072001A - 誘電体セラミック、及び積層セラミックコンデンサ - Google Patents
誘電体セラミック、及び積層セラミックコンデンサ Download PDFInfo
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- JP2012072001A JP2012072001A JP2010216926A JP2010216926A JP2012072001A JP 2012072001 A JP2012072001 A JP 2012072001A JP 2010216926 A JP2010216926 A JP 2010216926A JP 2010216926 A JP2010216926 A JP 2010216926A JP 2012072001 A JP2012072001 A JP 2012072001A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 81
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 31
- 239000002245 particle Substances 0.000 claims abstract description 152
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 9
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 3
- 239000000843 powder Substances 0.000 description 24
- 239000013078 crystal Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910002113 barium titanate Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- -1 barium titanate compound Chemical class 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
【解決手段】一般式{100(BaTiO3+aBaZrO3)+bRO3/2+cMgO+dMnOx+eSiO2}(Rは特定の希土類元素、0≦a≦0.2、8.0≦b≦12.0、1.0≦c≦10.0、0.1≦d≦3.0、1.0≦e≦10.0)で表わされる組成物を含有し、粒径が0.7μm以上の第1の粒子と0.6μm以下の第2の粒子を含み、第1の粒子の平均粒径Aave、第2の粒子の平均粒径Baveが、0.8μm≦Aave≦2.0μm、0.1μm≦Bave≦0.5μm、Aave/Bave≧3.0を満足し、第1の粒子が占有する面積比率SA、第2の粒子が占有する面積比率SBが、0.3≦SA≦0.9、0.1≦SB≦0.7、0.8≦SA+SB≦1.0を満足する。
【選択図】図1
Description
8.0≦b≦12.0…(2)
1.0≦c≦10.0 …(3)
0.1≦d≦3.0 …(4)
1.0≦e≦10.0 …(5)
0.1μm≦Bave≦0.5μm …(7)
0.1≦SB≦0.7 …(10)
0.8≦SA+SB≦1.0 …(11)
このような理由から本実施の形態では、一般式(A)が数式(1)〜(5)を満足するようにしている。
まず、平均粒径の異なる2種類の主成分粉末を作製した。
次に、試料番号1〜39の各試料について、以下の方法でセラミック構造を分析し、第1の粒子Aの平均粒径Aave、及び第2の粒子Bの平均粒径Bave、両者の比率Aave/Bave、誘電体層中の第1の粒子Aの面積比率SA、誘電体層中の第2の粒子Bの面積比率SB、及び両者の和(SA+SB)を求めた。
まず、BaとTiの配合モル比が異なる2種類の主成分粉末を作製した。
次に、試料番号51〜70の各試料について、〔実施例1〕と同様の方法・手順で、セラミック構造を分析し、第1の粒子Aの平均粒径Aave、及び第2の粒子Bの平均粒径Bave、両者の比率Aave/Bave、誘電体層中の第1の粒子Aの面積比率SA、誘電体層中の第2の粒子Bの面積比率SB、及び両者の和(SA+SB)を求めた。
6a〜6g 誘電体層
Claims (3)
- 一般式{100(BaTiO3+aBaZrO3)+bRO3/2+cMgO+dMnOx+eSiO2}(Rは、Sm、Eu、Gd、Tb、Dy、及びHoの群の中から選択される1種以上の元素を示し、xはMnの価数によって一義的に決まる正の数を示す。)で表わされる組成物を含有すると共に、
前記一般式中のa、b、c、d、及びeは、それぞれ
0≦a≦0.2、
8.0≦b≦12.0、
1.0≦c≦10.0、
0.1≦d≦3.0、及び
1.0≦e≦10.0
を満足し、
粒径が0.7μm以上の第1の粒子Aと、粒径が0.6μm以下の第2の粒子Bとを含み、前記第1の粒子Aの平均粒径Aave、及び前記第2の粒子Bの平均粒径Baveが、
0.8μm≦Aave≦2.0μm、
0.1μm≦Bave≦0.5μm
であり、
かつ、前記平均粒径Aaveと前記平均粒径Baveとの比率Aave/Baveが、
Aave/Bave≧3.0
を満足すると共に、
前記第1の粒子が占有する面積比率SA、及び前記第2の粒子が占有する面積比率SBが、
0.3≦SA≦0.9、
0.1≦SB≦0.7、及び
0.8≦SA+SB≦1.0
を満足していることを特徴とする誘電体セラミック。 - 前記Baの一部が、Ca及びSrのうちの少なくとも一方で置換されていることを特徴とする請求項1記載の誘電体セラミック。
- 誘電体層と内部電極とが交互に積層されたセラミック焼結体を備えた積層セラミックコンデンサにおいて、
前記誘電体層が、請求項1又は請求項2記載の誘電体セラミックで形成されていることを特徴とする積層セラミックコンデンサ。
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CN102417351A (zh) | 2012-04-18 |
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