CN102417351A - 电介质陶瓷以及层叠陶瓷电容器 - Google Patents
电介质陶瓷以及层叠陶瓷电容器 Download PDFInfo
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- CN102417351A CN102417351A CN2011103038774A CN201110303877A CN102417351A CN 102417351 A CN102417351 A CN 102417351A CN 2011103038774 A CN2011103038774 A CN 2011103038774A CN 201110303877 A CN201110303877 A CN 201110303877A CN 102417351 A CN102417351 A CN 102417351A
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Abstract
即使在将电介质层薄层化的情况下,也能够得到良好的可靠性,实现适于中高压用途的层叠陶瓷电容器。其含有由{100(BaTiO3+aBaZrO3)+bR+cMg+dMn+eSi}(R为特定的稀土元素,0≤a≤0.2、8.0≤b≤12.0、1.0≤c≤10.0、0.1≤d≤3.0以及1.0≤e≤10.0)表示的组合物,包含粒径为0.7μm以上的第一粒子和粒径为0.6μm以下的第二粒子,第一粒子的平均粒径Aave、第二粒子的平均粒径Bave满足0.8μm≤Aave≤2.0μm、0.1μm≤Bave≤0.5μm,Aave/Bave≥3.0,第一粒子占有的面积比率SA、第二粒子占有的面积比率SB满足0.3≤SA≤0.9、0.1≤SB≤0.7以及0.8≤SA+SB≤1.0。
Description
技术领域
本发明涉及电介质陶瓷以及层叠陶瓷电容器,更详细而言,涉及以钛酸钡类化合物为主成分的电介质陶瓷、以及使用该电介质陶瓷的层叠陶瓷电容器,特别是适于额定电压高的中高压用途的小型、大容量的层叠陶瓷电容器。
背景技术
作为在层叠陶瓷电容器中使用的陶瓷材料,以往广泛已知有:具有高介电常数的钛酸钡类化合物。另外,作为内部电极材料,广泛使用廉价且具有良好的导电性的Ni等贱金属材料。
另外,随着近年来的电子技术的发展,层叠陶瓷电容器的小型化、大容量化快速进行。
这种层叠陶瓷电容器,在由电介质陶瓷构成的电介质层与内部电极交互层叠、进行煅烧处理而得到的陶瓷烧结体的两端部形成有外部电极。通过使上述电介质层变薄而多层层叠,可以实现层叠陶瓷电容器的小型化、大容量化。
在专利文献1中提出了一种电介质磁器组合物,其具有:包含钛酸钡的主成分、包含BaZrO3的第一副成分、包含Mg的氧化物的第二副成分、包含特定的稀土元素R的氧化物的第三副成分、包含Mn等的氧化物的第四副成分、包含Si等的氧化物的第五副成分、和包含Al的氧化物的第六副成分,相对于上述主成分100摩尔的各副成分的氧化物或复合氧化物换算计的比率为:第一副成分:9~13摩尔、第二副成分:2.7~5.7摩尔、第三副成分:4.5~5.5摩尔、第四副成分:0.5~1.5摩尔、第五副成分:3.0~3.9摩尔、第六副成分:0.5~1.5摩尔。
在该专利文献1中,相对于含有钛酸钡的主成分,除了第一~第五副成分之外,还含有规定量的第六副成分,由此,得到10小时以上的高温加速寿命。
专利文献1:日本特开2008-162830号公报(权利要求1)
发明内容
为了实现层叠陶瓷电容器的小型化、大容量化,如上所述,需要电介质层的薄层化、多层化,但在电介质层进行薄层化、多层化时,要求即使施加高电场也具有寿命特性良好的可靠性。
但是,在专利文献1中,即使电介质层的厚度为约20μm,也仅得到约12~34小时的高温加速寿命,处于尚不能得到充分的寿命特性的状沉。特别是在面向目前的中高压用途的层叠陶瓷电容器中,即使电介质层的厚度为10μm以下,也要求具有进一步的高温加速寿命的可靠性优良的电介质陶瓷。
本发明是鉴于这样的情况而进行的,其目的在于提供即使在使电介质层薄层化的情况下也能够得到良好的可靠性的电介质陶瓷、以及使用其的适于中高压用途的层叠陶瓷电容器。
本发明人为了实现上述目的,对于以钛酸钡类化合物为主成分的半导体陶瓷进行了深入的研究,结果得到如下见解,在含有特定的稀土氧化物、Mg氧化物、Mn氧化物、硅氧化物为规定量的同时,将晶粒划分成粒径为0.7μm以上的大粒子和粒径为0.6μm以下的小粒子,规定它们的各平均粒径以及平均粒径的比率,进一步规定这些大粒子和小粒子的半导体陶瓷中的面积比率,由此,能够提高寿命特性,从而即使将电介质层薄层化,也能够得到可靠性更加良好的半导体陶瓷。另外可知,即使用规定量的Zr置换Ti的一部分,也发挥同样的效果。
本发明是基于这样的见解而进行的,本发明的电介质陶瓷的特征在于,组成含有由{100(BaTiO3+aBaZrO3)+bR+cMgO+dMn+eSi}(R表示选自Sm、Eu、Gd、Tb、Dy以及Ho中的一种以上的元素,x表示根据Mn的价数明确确定的正数)表示的组合物,并且上述a、b、c、d以及e分别满足0≤a≤0.2、8.0≤b≤12.0、1.0≤c≤10.0、0.1≤d≤3.0以及1.0≤e≤10.0,包含粒径为0.7μm以上的第一粒子A和粒径为0.6μm以下的第二粒子B,上述第一粒子A的平均粒径Aave以及上述第二粒子B的平均粒径Bave为0.8μm≤Aave≤2.0μm、0.1μm≤Bave≤0.5μm,并且上述平均粒径Aave与上述平均粒径Bave的比率Aave/Bave满足Aave/Bave≥3.0,同时上述第一粒子占有的面积比率SA以及上述第二粒子占有的面积比率SB满足0.3≤SA≤0.9、0.1≤SB≤0.7以及0.8≤SA+SB≤1.0。
需要说明的是,本发明中,平均粒径是指累积个数分布为50%的圆当量粒径。
另外认为,即使在将BaTiO3的Ba被Ca或Sr置换的情况下,也能够发挥同样的效果。
即,本发明的电介质陶瓷也优选上述Ba的一部分被Ca以及Sr中的至少一种置换。
另外,本发明的层叠陶瓷电容器,具备电介质层与内部电极交替层叠而成的陶瓷烧结体,其特征在于,上述电介质层由上述电介质陶瓷形成。
根据本发明的电介质陶瓷,相对于钛酸钡类化合物含有规定量的BaZrO3、R、Mg、Mn以及Si的同时,将粒径为0.7μm以上的第一粒子A以及粒径为0.6μm以下的第二粒子B的各平均粒径Aave、Bave设定在规定范围内,两者的比率具有规定的关系,另外,上述第一以及第二粒子的面积比率SA、SB满足规定的关系,因此,可以提高寿命特性,由此,即使将电介质层薄层化,也能够得到可靠性更加良好的半导体陶瓷。
另外,即使在上述Ba的一部分被Ca以及Sr中的至少一种置换的情况下,也能够发挥同样的效果。
另外,根据本发明的层叠陶瓷电容器,具备电介质层与内部电极交替层叠而成的陶瓷烧结体,上述电介质层由上述电介质陶瓷形成,因此,即使电介质层进一步薄层化,也能够得到高温加速寿命良好的可靠性优良的适于中高压用途的层叠陶瓷电容器。
附图说明
图1是示意地表示本发明的层叠陶瓷电容器的一个实施方式的截面图。
具体实施方式
下面,对本发明的实施方式进行详细说明。
作为本发明的一个实施方式的电介质陶瓷含有由(A)表示的组合物。
100(BaTiO3+aBaZrO3)+bR+cMg+dMn+eSiO2...(A)
即,本电介质陶瓷以BaTiO3为主成分,作为副成分,相对于主成分1摩尔份含有a摩尔份的BaZrO3,作为其他副成分,相对于主成分100摩尔还含有b摩尔的R、c摩尔的Mg、d摩尔的Mn、以及e摩尔的Si。
晶粒优选主要由作为主成分的BaTiO3构成,BaZrO3在晶粒中固溶。其他副成分R、Mg、Mn以及SiO2在晶粒、晶界(包括结晶三相点)的任意一处存在。
在此,R表示选自Sm、Eu、Gd、Tb、Dy以及Ho中的一种以上的元素。另外,上述a、b、c、d以及e为下述算式(1)~(5)所示的范围。
0≤a≤0.2...(1)
8.0≤b≤12.0...(2)
1.0≤c≤10.0...(3)
0.1≤d≤3.0...(4)
1.0≤e≤10.0...(5)
另外,本发明的电介质陶瓷,以粒径为0.7μm以上的大的第一粒子A的平均粒径Aave满足下述算式(6)、粒径为0.6μm以下的小的第二粒子B的平均粒径Bave满足下述算式(7)的方式形成。
0.8μm≤Aave≤2.0μm...(6)
0.1μm≤Bave≤0.5μm...(7)
另外,上述第一粒子A的平均粒径Aave与上述第二粒子B的平均粒径Bave的比率Aave/Bave满足下述算式(8)所示的关系。
Aave/Bave≥3.0...(8)
另外,本发明的电介质陶瓷,第一粒子A占有的面积比率SA以及第二粒子B占有的面积比率SB满足下述算式(9)~(11)所示的关系。
0.3≤SA≤0.9...(9)
0.1≤SB≤0.7...(10)
0.8≤SA+SB≤1.0...(11)
本电介质陶瓷在(A)满足算式(1)~(5)的同时,通过满足算式(6)~(11)的第一粒子A与第二粒子B的协同效果,电介质层进一步薄层化,即使在高温气氛下长时间施加高电场,也能够抑制绝缘电阻的降低,从而可以得到良好的可靠性。具体而言,即使在170℃的温度下施加400V的高电场,也能够得到100小时以上的寿命。
即,本发明的半导体陶瓷,在将晶粒划分成粒径为0.7μm以上的大的第一粒子A和粒径为0.6μm以下的小的第二粒子B的情况下,这些第一粒子A的平均粒径Aave在0.8~2.0μm的范围内,第二粒子B的平均粒径Bave在0.1~0.5μm的范围内。另外,如果第一粒子A以及第二粒子B的平均粒径Aave、Bave在这些范围之外,则无法确保所期望的可靠性。
另外,第一粒子A的平均粒径Aave与第二粒子B的平均粒径Bave的比率Aave/Bave低于3.0时,第一粒子A变得过少,有可能导致可靠性降低,因此,如算式(8)所示,以比率Aave/Bave达到3.0以上的方式配合第一粒子A以及第二粒子B。
另外,使第一粒子A以及第二粒子B的电介质陶瓷中的面积比率SA、SB满足算式(9)~(11),是根据以下理由。
平均粒径Aave大的第一粒子A在晶粒内大量存在时,由于晶粒内的可靠性提高,因此,即使在高电场强度下,也能够得到充分的可靠性。因此,在电介质层中所占的第一粒子A以面积比率SA计需要为0.3以上。但是,上述面积比率SA超过0.9时,粒径大的第一粒子A的比例变得过量,晶界减少,因此,在将电介质层薄层化的情况下,有可能导致可靠性降低。
另一方面,平均粒径Bave小的第二粒子B增多时,晶界增加,即使将电介质层薄层化,也能够得到充分的可靠性。因此,电介质层中所占的第二粒子B以面积比率SB计需要为0.1以上。但是,上述面积比率SB超过0.7时,第二粒子B在晶粒内大量存在。另外,引起第二粒子B在晶粒内的可靠性降低,因此,容易导致高电场强度下的可靠性降低。
这样通过以规定范围的存在比例使粒径大的粒子A和粒径小的粒子B共存,有可能使晶界中的可靠性和晶粒内的可靠性二者提高。
另外,第一粒子A的面积比率SA以及第二粒子B的面积比率SB总计低于0.8时,第一粒子A以及第二粒子B二者的存在比例减少,有可能无法确保充分的可靠性。
根据这样的理由,本发明的电介质陶瓷,使第一粒子A的面积比率SA以及第二粒子B的面积比率SB满足算式(9)~(11),由此,即使在高电场强度下也能够保持良好的可靠性。
另外,使(A)满足算式(1)~(5)是根据以下理由。
通过使电介质陶瓷中含有相当量的稀土氧化物R,可以在晶界以及晶粒内二者中存在稀土元素R,由此,能够提高高温负荷时的寿命特性,从而能够实现可靠性提高。
但是,R的含有摩尔量b,在相对于主成分100摩尔份低于8.0摩尔份的情况下,无法实现充分的可靠性提高,另一方面,R的含有摩尔量b超过12.0摩尔份而过量地含有R的情况下,反而有可能导致可靠性降低。
另外,相对于1摩尔份BaTiO3的BaZrO3的含有摩尔量a、即相对于BaTiO3中的Ti的Zr的置换摩尔量a超过0.2时,在将电介质层薄层化的情况下,在高温负荷时绝缘电阻的降低显著,有可能无法得到所期望的良好的可靠性。
另外,在Mg的含有摩尔量c超过10.0摩尔份时、Mn的含有摩尔量d超过3.0摩尔份时、以及Si的含有摩尔量e超过10.0摩尔份时,将电介质层薄层化的情况下,在高温负荷时绝缘电阻的降低显著,有可能无法得到所期望的良好的可靠性。
另一方面,在Mg的含有摩尔量c低于1.0摩尔份的情况下以及Mn的含有摩尔量d低于0.1摩尔份的情况下,有可能发生半导体化,在Si的含有摩尔量e低于1.0摩尔份的情况下,有可能导致烧结性降低,根据这样的理由,本实施方式中,使(A)满足算式(1)~(5)。
另外,作为主成分的BaTiO3具有由ABO3表示的钙钛矿结构,在本实施方式中,能够将Ti的一部分根据需要用Zr进行置换,也优选将Ba的一部分用Sr和/或Ca置换。
另外,A位与B位的配合摩尔比在化学计量上为1.000,也优选以对各种特性和烧结性等不产生影响的程度、根据需要以A位过量、或B位过量的方式进行配合。
下面,对使用上述电介质陶瓷的层叠陶瓷电容器进行详述。
图1是示意地表示上述层叠陶瓷电容器的一个实施方式的截面图。
该层叠陶瓷电容器,内部电极2a~2f埋设在陶瓷烧结体1中,同时在该陶瓷烧结体1的两端部形成外部电极3a、3b,另外,在该外部电极3a、3b的表面上形成第一镀膜4a、4b以及第二镀膜5a、5b。
即,陶瓷烧结体1,电介质层6a~6g与内部电极层2a~2f交替层叠,并进行煅烧,内部电极层2a、2c、2e与外部电极3a电连接,内部电极层2b、2d、2f与外部电极3b电连接。另外,在内部电极层2a、2c、2e与内部电极层2b、2d、2f的相对面之间形成静电电容。
上述电介质层6a~6g由上述电介质陶瓷形成。
另外,作为构成内部电极层2a~2f的内部电极材料,没有特别的限定,优选使用廉价且具有良好导电性的以Ni为主成分的材料。
由此,即使在将电介质陶瓷层薄层化的情况下,也能够得到良好的高温负荷特性。
下面,对于上述层叠陶瓷电容器的制造方法进行概述。
首先,制作平均粒径不同的二种主成分粉末(BaTiO3)。
例如,作为陶瓷原料,准备BaCO3、比表面积不同的二种TiO2。然后,将它们称量规定量,将这些称量物与PSZ(Partially Stabilized Zirconia:部分稳定化氧化锆)球等粉碎介质球以及纯水一起投入球磨机中,以湿式充分地进行混合粉碎,由此,制作平均粒径不同的二种主成分粉末、即第一主成分粉末以及第二主成分粉末。
接着,作为副成分粉末,准备BaZrO3、稀土氧化物(Gd2O3、Sm2O3、Eu2O3、Tb2O3、Dy2O3和/或Ho2O3)、Mg化合物、Mn化合物以及Si化合物。
接着,称量第一及第二主成分粉末、以及上述副成分粉末规定量,将该称量物与PSZ球等粉碎介质以及纯水一起投入球磨机中,以湿式充分地进行混合粉碎,使其干燥,由此,制作陶瓷原料粉末。
接着,将该陶瓷原料粉末与有机粘合剂和有机溶剂、粉碎介质一起投入球磨机中,进行湿式混合,制作陶瓷浆料,通过刮片法(リツプ法)或刮板法等,对陶瓷浆料进行成形加工,以煅烧后的厚度为10μm以下的方式,制作陶瓷生片。
接着,将Ni粉末等导电性材料与有机载体以及有机溶剂一起混合,通过三辊轧机等进行混炼,由此,制作内部电极用导电性糊。
然后,使用该内部电极用导电性糊,在陶瓷生片上实施丝网印刷,从而在上述陶瓷生片的表面上形成规定图形的导电膜。
接着,将形成有导电膜的陶瓷生片在规定方向上多片层叠,然后,将其用没有形成导电膜的陶瓷生片夹持,进行压接,切割成规定尺寸,制作陶瓷层叠体。然后,在温度300~500℃下进行脱粘合剂处理,另外,在氧气分压控制为10-9~10-12MPa的由H2-N2-H2O气体构成的还元性气氛下,在温度1100~1300℃下进行约2小时煅烧处理。由此,同时烧结导电膜和陶瓷生片,得到电介质层6a~6g与内部电极2a~2f交替层叠的陶瓷烧结体1。
另外,在陶瓷烧结体1的两端面上涂布外部电极用导电性糊,在600~800℃的温度下进行煅烧处理,形成外部电极3a、3b。
需要说明的是,对于外部电极用导电性糊中含有的导电性材料,没有特别的限定,从低成本化的观点出发,优选以Ag、Cu、或者它们的合金为主成分、含有B2O3-Li2O-Si-BaO等玻璃粉等的材料。
另外,作为外部电极3a、3b的形成方法,可以在陶瓷层叠体的两端面上涂布外部电极用导电性糊,然后,与陶瓷层叠体同时实施煅烧处理。
最后,实施电镀,在外部电极3a、3b的表面上形成由Ni、Cu、Ni-Cu合金等构成的第一镀膜4a、4b,再在该第一镀膜4a、4b的表面上形成由焊料和锡等构成的第二镀膜5a、5b,由此,可以制造层叠陶瓷电容器。
这样形成的层叠陶瓷电容器,电介质层6a~6g由上述本发明的电介质陶瓷形成,因此,即使在电介质层6a~6g在薄层化至10μm以下的情况下,也能够得到高温负荷时的寿命特性良好、且可靠性优良的适于中高压用途的层叠陶瓷电容器。
需要说明的是,本发明并不限定于上述实施方式,在不脱离主旨的范围内可以进行各种变形。例如,上述实施方式中,以具有不同的平均粒径的二种主成分粉末作为起始原料,作为最终生成物,只要(A)满足算式(1)~(5),粒径为0.7μm以上的大的第一粒子A以及粒径为0.6μm以下的小的第二粒子B满足算式(6)~(11),则制造方法没有特别的限定,例如,可以将Ba与Ti的配合摩尔比不同的二种BaTiO3作为起始原料。
另外,本发明的电介质陶瓷,在对特性不产生影响的范围内,也可以含有杂质等。
下面,对本发明的实施例进行具体的说明。
实施例1
[试样的制作]
首先,制作平均粒径不同的二种主成分粉末。
即,作为陶瓷原料,准备BaCO3、比表面积为30m2/g的TiO2。将这些称量规定量后,与PSZ球以及纯水一起投入球磨机中,以湿式充分地进行混合粉碎,由此,制作平均粒径0.6~2.0μm的由Ba1.005TiO3构成的第一主成分粉末。
接着,作为陶瓷原料,准备BaCO3、比表面积为50m2/g的TiO2。将这些称量规定量后,与PSZ球以及纯水一起投入球磨机中,以湿式充分地进行混合粉碎,由此,制作平均粒径0.05~0.5μm的由Ba1.005TiO3构成的第二主成分粉末。
接着,作为副成分粉末,准备BaZrO3、Gd2O3、Sm2O3、Eu2O3、Tb2O3、Dy2O3、Ho2O3、MgCO3、MnCO3以及SiO2。
另外,以表1所示的比例称量第一以及第二主成分粉末的配合摩尔量α、β,另外,相对于主成分1摩尔份,如表1所示称量BaZrO3的含有摩尔量a,关于其他副成分粉末,相对于主成分100摩尔份,如表1所示称量含有摩尔量b~e。
接着,将这些的称量物与PSZ球以及纯水一起投入球磨机中,以湿式充分地进行混合粉碎后,使其蒸发干燥,制作陶瓷原料粉末。
接着,将上述陶瓷原料粉末与乙醇或聚乙烯醇缩丁醛类粘合剂以及PSZ球一起投入球磨机中,进行湿式混合12小时,由此,制作陶瓷浆料,再通过刮片法(RIP method)对陶瓷浆料进行成形,以煅烧后的厚度达到10μm的方式制作陶瓷生片。
接着,准备含有Ni粉末、有机载体以及有机溶剂的内部电极用导电性糊。
接着,使用上述内部电极用导电性糊对陶瓷生片上实施丝网印刷,在上述陶瓷生片的表面上形成规定图形的导电膜。
接着,将形成有导电膜的陶瓷生片层叠规定片,用没有形成导电膜的陶瓷生片夹持,压接,切割成规定尺寸,制作陶瓷层叠体。之后,在氮气氛下、300℃的温度下进行脱粘合剂处理,另外,在氧分压控制成10-10MPa的由H2-N2-H2O气体构成的还元性气氛下、温度1200℃下进行煅烧处理约2小时,由此,将导电膜和陶瓷生片同时进行烧结,制作埋设有内部电极的陶瓷烧结体。
然后,准备含有Cu粉末以及B2O3-Li2O-Si-BaO类玻璃粉的外部电极用导电性糊。将外部电极用导电性糊涂布到陶瓷烧结体的两端面上,在氮气氛下、800℃的温度下进行煅烧处理,形成外部电极,制作试样编号1~39的试样。
所得到的试样的电介质层的厚度为10μm,外形尺寸为长:2.0mm、宽:1.2mm、厚度:1.0mm、电介质层每一层的对向电极面积为1.4mm2,有效层叠数为10层。
[试样的评价]
接着,对于试样编号1~39的各试样,通过以下方法分析陶瓷结构,求出第一粒子A的平均粒径Aave以及第二粒子B的平均粒径Bave、两者的比率Aave/Bave、电介质层中的第一粒子A的面积比率SA、电介质层中的第二粒子B的面积比率SB以及两者之和(SA+SB)。
即,将各试样断裂,进行蚀刻处理,除去晶界中的玻璃成分,形成晶界部分明显的状态,用FE-SEM观察2次电子像。然后,将晶粒约50个左右、能够视认的程度作为1个样品,确认5个视野,分析这些晶粒的粒度分布,将粒径为0.7μm以上的粒子作为第一粒子A,将粒径为0.6μm以下的粒子作为第二粒子B,对每个试样求出第一粒子A以及第二粒子B的平均粒径Aave、Bave。
另外,求出在视野中确认的第一以及第二粒子A、B的面积比率,作为电介质层中的第一以及第二粒子A、B的面积比率SA、SB。
接着,进行高温加速寿命试验,计算出平均故障时间,评价寿命特性。
即,对于试样编号1~39的各10个试样,在170℃的温度下施加400V的直流电压,测定直到绝缘电阻值达到100kΩ以下的时间,计算平均值,作为平均故障时间,评价寿命特性。
表1示出试样编号1~39的各试样的组成成分,表2示出陶瓷结构的分析结果以及平均故障时间。
[表1]
*为本发明范围之外
[表2]
*为本发明范围之外
试样编号1由于电介质层中所占的第一粒子A的面积比率SA小,为0.2,因此,平均故障时间变短,为80小时。
试样编号5由于电介质层中所占的第一粒子A的面积比率SA大,为0.95,并且电介质层中所占的第二粒子B的面积比率SB小,为0.05,因此,平均故障时间变为90小时,缩短至低于100小时。
试样编号13由于第一粒子A的平均粒径Aave大,为2.2μm,因此,平均故障时间变为70小时,缩短至低于100小时。
试样编号14由于第二粒子A的平均粒径Bave小,为0.08μm,因此,平均故障时间变为80小时,缩短至低于100小时。
试样编号17由于第一粒子A与第二粒子B的粒径比Aave/Bave小,为2.0,因此,平均故障时间变为60小时,缩短至低于100小时。
试样编号23由于BaZrO3的含有摩尔量a相对于主成分1摩尔份多达0.25摩尔份,因此,平均故障时间变为90小时,缩短至低于100小时。
试样编号24由于Gd的含有摩尔量b相对于主成分100摩尔份少至7.0摩尔份,因此,平均故障时间变为70小时,缩短至低于100小时。
试样编号27由于Gd的含有摩尔量b相对于主成分100摩尔份多达13.0摩尔份,因此,平均故障时间变为60小时,缩短至低于100小时。
试样编号28由于Mg的含有摩尔量c相对于主成分100摩尔份少至0.5摩尔份,因此,发生半导体化,无法得到所期望的电介质陶瓷。
试样编号31由于Mg的含有摩尔量c相对于主成分100摩尔份过量为12.0摩尔份,因此平均故障时间变为90小时,缩短至100小时。
试样编号32由于Mn的含有摩尔量d相对于主成分100摩尔份少至0.05摩尔份,因此,发生半导体化,无法得到所期望的电介质陶瓷。
试样编号35由于Mn的含有摩尔量d相对于主成分100摩尔份过量为5.0摩尔份,因此平均故障时间变为60小时,缩短至低于100小时。
试样编号36由于Si的含有摩尔量e相对于主成分100摩尔份少至0.5摩尔份,因此,在1200℃下无法使其烧结。
试样编号39由于Si的含有摩尔量e相对于主成分100摩尔份过量为15.0摩尔份,因此,平均故障时间变为70小时,缩短至低于100小时。
相对于此,试样编号2~4、6~12、15、16、18~22、25、26、29、30、33、34、37以及38均在本发明的范围内,为0≤a≤0.2、8.0≤b≤12.0、1.0≤c≤10.0、0.1≤d≤3.0、1.0≤e≤10.0,0.8μm≤Aave≤2.0μm、0.1μm≤Bave≤0.5μm、Aave/Bave≥3.0、0.3≤SA≤0.9、0.1≤SB≤0.7、0.8≤SA+SB≤1.0,因此,平均故障时间变为120~250小时,可以确认,即使在高温时长时间施加高电场,也能够得到寿命特性良好、且可靠性优良的层叠陶瓷电容器。
实施例2
[试样的制作]
首先,制作Ba与Ti的配合摩尔比不同的二种主成分粉末。
即,作为陶瓷原料,准备BaCO3、比表面积为30m2/g的TiO2。将它们称量规定量,将这些称量物与PSZ球以及纯水一起投入球磨机中,以湿式充分地进行混合粉碎,由此,制作Ba与Ti的配合摩尔比不同的由Bam1TiO3构成的第一主成分粉末和由Bam2TiO3构成的第二主成分粉末。需要说明的是,第一以及第二主成分粉末的平均粒径均为0.2μm。
然后,按照与[实施例1]同样的方法、顺序制作试样编号51~70的试样。
所得到的试样的电介质层的厚度为10μm,外形尺寸为长:2.0mm、宽:1.2mm、厚度:1.0mm,电介质层每一层的对向电极面积为1.4mm2,有效层叠数为10层。
[试样的评价]
下面,对于试样编号51~70的各试样,按照与[实施例1]同样的方法、顺序,分析陶瓷结构,求出第一粒子A的平均粒径Aave以及第二粒子B的平均粒径Bave、两者的比率Aave/Bave、电介质层中的第一粒子A的面积比率SA、电介质层中的第二粒子B的面积比率SB以及两者之和(SA+SB)。
另外,关于试样编号51~70的各试样,按照与[实施例1]同样的方法、顺序,进行高温加速寿命试验,计算出平均故障时间,评价寿命特性。
表3示出试样编号51~70的各试样的组成成分,表4示出陶瓷结构的分析结果以及平均故障时间。
[表3]
[表4]
*为本发明范围之外
试样编号51由于电介质层中所占的第一粒子A的面积比率SA小,为0.2,因此,平均故障时间缩短至70小时。
试样编号55由于电介质层中所占的第一粒子A的面积比率SA大,为0.95,并且电介质层中所占的第二粒子B的面积比率SB小,为0.05,因此,平均故障时间变为90小时,缩短至低于100小时。
试样编号56由于GdO3/2的含有摩尔量b相对于主成分100摩尔份少至7.0摩尔份,因此,平均故障时间变为60小时,缩短至低于100小时。
试样编号59由于GdO3/2的含有摩尔量b相对于主成分100摩尔份多达13.0摩尔份,因此,平均故障时间变为70小时,缩短至低于100小时。
试样编号67由于第一粒子A的平均粒径Aave大,为2.2μm,因此,平均故障时间变为70小时,缩短至低于100小时。
试样编号68由于第二粒子B的平均粒径Bave小,为0.08μm,因此,平均故障时间变为80小时,缩短至低于100小时。
试样编号70由于第一粒子A与第二粒子B的粒径比Aave/Bave小,为2.4,因此,平均故障时间变为60小时,缩短至低于100小时。
相对于此,试样编号52~54、57、58、60~66以及69均在本发明范围内,为0≤a≤0.2、8.0≤b≤12.0、1.0≤c≤10.0、0.1≤d≤3.0、1.0≤e≤10.0,0.8μm≤Aave≤2.0μm、0.1μm≤Bave≤0.5μm、Aave/Bave≥3.0、0.3≤SA≤0.9、0.1≤SB≤0.7、0.8≤SA+SB≤1.0,因此,平均故障时间变为120~210小时,可以确认,即使在高温时长时间施加高电场,也得到寿命特性良好、可靠性优良的层叠陶瓷电容器。
另外,由实施例1以及2可知,不依赖于制造方法,只要最终生成物在上述范围内,则即使在高温时长时间施加高电场,也得到寿命特性良好、可靠性优良的层叠陶瓷电容器。
产业上利用的可能性
即使在将电介质层薄层化的情况下,也能够实现高温加速寿命良好、可以使可靠性提高、且适于中高压用途的层叠陶瓷电容器。
符号说明
2a~2f内部电极
6a~6g电介质层
Claims (3)
1.一种电介质陶瓷,其特征在于,
含有由{100(BaTiO3+aBaZrO3)+bR+cMg+dMnx+eSi}表示的组合物,其中,R表示选自Sm、Eu、Gd、Tb、Dy以及Ho中的一种以上的元素,x表示根据Mn的价数明确确定的正数,
并且所述a、b、c、d以及e分别满足
0≤a≤0.2、
8.0≤b≤12.0、
1.0≤c≤10.0、
0.1≤d≤3.0、以及
1.0≤e≤10.0,
包含粒径为0.7μm以上的第一粒子A和粒径为0.6μm以下的第二粒子B,
所述第一粒子A的平均粒径Aave以及所述第二粒子B的平均粒径Bave为
0.8μm≤Aave≤2.0μm、
0.1μm≤Bave≤0.5μm,
并且所述平均粒径Aave与所述平均粒径Bave的比率Aave/Bave满足Aave/Bave≥3.0,
同时所述第一粒子占有的面积比率SA以及所述第二粒子占有的面积比率SB满足
0.3≤SA≤0.9、
0.1≤SB≤0.7、以及
0.8≤SA+SB≤1.0。
2.根据权利要求1所述的电介质陶瓷,其特征在于,所述Ba的一部分被Ca以及Sr中的至少一种置换。
3.一种层叠陶瓷电容器,其具有电介质层与内部电极交替层叠而成的陶瓷烧结体,其特征在于,
所述电介质层是由权利要求1或2所述的电介质陶瓷形成的。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101248025A (zh) * | 2005-06-24 | 2008-08-20 | Tdk株式会社 | 电子部件和其制造方法 |
WO2008105240A1 (ja) * | 2007-02-26 | 2008-09-04 | Murata Manufacturing Co., Ltd. | 誘電体セラミック、及び積層セラミックコンデンサ |
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GB2426515B (en) * | 2004-02-27 | 2007-10-24 | Murata Manufacturing Co | Dielectric ceramic composition and laminated ceramic condenser |
JP4782457B2 (ja) * | 2005-03-29 | 2011-09-28 | 京セラ株式会社 | 積層セラミックコンデンサ |
JP2007297258A (ja) | 2006-04-28 | 2007-11-15 | Taiyo Yuden Co Ltd | 誘電体セラミックス及び積層セラミックコンデンサ |
JP4863005B2 (ja) * | 2006-12-27 | 2012-01-25 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
JP2008162862A (ja) | 2006-12-28 | 2008-07-17 | Tdk Corp | 誘電体磁器組成物および電子部品 |
JP2008174434A (ja) | 2007-01-22 | 2008-07-31 | Tdk Corp | 誘電体磁器組成物および電子部品 |
JP4863007B2 (ja) | 2007-01-23 | 2012-01-25 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
JP5067531B2 (ja) * | 2007-01-23 | 2012-11-07 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
JP2008201616A (ja) | 2007-02-19 | 2008-09-04 | Taiyo Yuden Co Ltd | 誘電体セラミックス及び積層セラミックコンデンサ |
JP2008251739A (ja) * | 2007-03-29 | 2008-10-16 | Tdk Corp | 積層型電子部品 |
JP5121311B2 (ja) * | 2007-06-01 | 2013-01-16 | 京セラ株式会社 | 誘電体磁器および積層セラミックコンデンサ |
JP5217405B2 (ja) | 2007-12-11 | 2013-06-19 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
JP4883110B2 (ja) * | 2009-02-25 | 2012-02-22 | 株式会社村田製作所 | 積層セラミックコンデンサ |
-
2010
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101248025A (zh) * | 2005-06-24 | 2008-08-20 | Tdk株式会社 | 电子部件和其制造方法 |
WO2008105240A1 (ja) * | 2007-02-26 | 2008-09-04 | Murata Manufacturing Co., Ltd. | 誘電体セラミック、及び積層セラミックコンデンサ |
Non-Patent Citations (1)
Title |
---|
GANG YANG ET AL: "Dielectric behaviour of BaTiO3-based ceramic multilayer capacitors under high dc bias field", 《JOURNAL OF PHYSICSD: APPLIED PHYSICS》 * |
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