CN101628809B - 介电陶瓷和层积陶瓷电容器 - Google Patents
介电陶瓷和层积陶瓷电容器 Download PDFInfo
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- CN101628809B CN101628809B CN2009101399357A CN200910139935A CN101628809B CN 101628809 B CN101628809 B CN 101628809B CN 2009101399357 A CN2009101399357 A CN 2009101399357A CN 200910139935 A CN200910139935 A CN 200910139935A CN 101628809 B CN101628809 B CN 101628809B
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- 239000003985 ceramic capacitor Substances 0.000 title claims description 31
- 229910010293 ceramic material Inorganic materials 0.000 title abstract 2
- 229910052788 barium Inorganic materials 0.000 claims abstract description 18
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 17
- 229910015249 Ba—Si Inorganic materials 0.000 claims abstract description 8
- 229910001000 nickel titanium Inorganic materials 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims description 66
- 239000002245 particle Substances 0.000 claims description 33
- 239000000203 mixture Substances 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 11
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- 239000004615 ingredient Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract 2
- 239000000843 powder Substances 0.000 description 49
- 229910003077 Ti−O Inorganic materials 0.000 description 19
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- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 11
- 229910018557 Si O Inorganic materials 0.000 description 10
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910008090 Li-Mn-O Inorganic materials 0.000 description 4
- 229910006369 Li—Mn—O Inorganic materials 0.000 description 4
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 4
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 238000011835 investigation Methods 0.000 description 3
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- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910008312 Si—Li—O Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical class [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
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Abstract
提供一种介电陶瓷,其对于热冲击的耐受性高,因此,适用于形成为了大容量化而薄层化的层积陶瓷电容器的介电陶瓷层。是以ABO3代表的钙钛矿型化合物为主成分介电陶瓷,ABO3譬如为BaTiO3时,其晶粒含有由主成分构成的BaTiO3晶粒(11),并且作为二次相,使之含有由至少含有Mg、Ni和Ti的结晶性氧化物构成的Mg-Ni-Ti-O结晶性氧化物粒子(12),和由至少含有Ba和Si的结晶性氧化物构成的Ba-Si-O系结晶性粒子(13)。
Description
技术领域
本发明涉及介电陶瓷和层积陶瓷电容器,特别是涉及在层积陶瓷电容器中适合使用的介电陶瓷,和用其构成的层积陶瓷电容器。
背景技术
本发明感兴趣的介电陶瓷,例如在专利文献1中有所记载。专利文献1所述的介电陶瓷,以具有钙钛矿(perovskite)型结构的钛酸钡系复合氧化物为主成分,使以稀土类元素R、Ni和Ti为主成分的R-Ni-Ti-O系的结晶性复合氧化物作为二次粒子存在。在此,也可以用Mg置换Ni的一部分。
上述这样的介电陶瓷,即使在高温气氛下,长时间连续外加大的电场(譬如电场强度20kV/mm),仍具有不会发生异常的高可靠性。因此,若使用该介电陶瓷,则为了层积陶瓷电容器的小型化和大容量化,即使介电陶瓷层被薄层化,仍能够实现具有高可靠性的层积陶瓷电容器。
然而,上述的介电陶瓷,可知具有对热冲击的耐受性比较低的缺点。
通过回流焊将层积陶瓷电容器装配到基板上时,层积陶瓷电容器有数分钟被置于加热状况下。另一方面,随着焊料的无铅化推进,焊料的熔点有提高的倾向。因此,在回流焊时,会对层积陶瓷电容器施加275~325℃的高温度的热冲击。
由于该热冲击带来的急升温、急降温,层积陶瓷电容器会有裂纹。特别是近年来,由于薄层大容量的进一步进行,导致电介电陶瓷层的厚度非常薄而低于1μm,因此,在热冲击下裂纹更容易发生。
【专利文献1】国际公开第2008/010412号册
发明内容
因此,本发明的目的在于,提供一种能够解决上述问题的介电陶瓷和用其构成的层积陶瓷电容器。
本发明首先是向面介电陶瓷的,其包括晶粒和晶界,具有如下组成:将以ABO3(A是Ba,或者是Ba以及选自Sr和Ca中的至少一个,B是Ti,或者是Ti以及选自Zr和Hf中的至少一个)表示的钙钛矿型化合物作为主成分,该介电陶瓷为了解决上述的技术性问题而具有如下结构。
即,在本发明的介电陶瓷中,上述晶粒含有由主成分构成的ABO3系晶粒,并且作为二次相含有:由至少含有Mg、Ni和Ti的结晶性氧化物构成的含Mg-Ni-Ti结晶性粒子;由至少含有Ba和Si的结晶性氧化物构成的含Ba-Si结晶性粒子。
在本发明的介电陶瓷中,作为副成分,还可以含有R(R包含La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu和Y之中的至少1种。)、M(M包含Mg、Ni、Mn、Co、Fe、Cr、Cu、Al、Mo、W和V之中的至少1种。)、和Si。
在上述情况下,优选R的总量相对于主成分100摩尔份为0.1~3.0摩尔份,M的总量相对于主成分100摩尔份为0.2~5.0摩尔份。
另外,在主成分ABO3中,优选Ba为78~100摩尔%,Sr为0~2摩尔%,Ca为0~20摩尔%,Ti为96~100摩尔%,Zr为0~2摩尔%,Hf为0~2摩尔%。
本发明另外还面向层积陶瓷电容器,包括电容器主体和第一与第二外部电极,所述电容器主体构成为具有被层积的多个介电陶瓷层和沿着所述介电陶瓷层间的特定界面形成的多个内部电极,所述第一和第二外部电极形成于所述电容器主体的外表面上的相互不同的位置,在所述内部电极中,与所述第一外部电极电连接的内部电极和与所述第二外部电极电连接的内部电极顺着层积方向被交替配置。
本发明的层积陶瓷电容器,其所具有的介电陶瓷层由上述的本发明的介电陶瓷构成。
在本发明的层积陶瓷电容器中,优选内部电极以Ni为主成分。
根据本发明,能够得到对热冲击性的耐受性优异的介电陶瓷。因此,如果用本发明的介电陶瓷构成层积陶瓷电容器这样的层积陶瓷电子部件,则能够使针对其装配时的急剧的温度变化的耐受性提高。
还有,本发明的耐受性提高的理由虽然尚不明确,但是推荐为,由于至少有含Mg-Ni-Ti结晶粒性子和含Ba-Si结晶性粒子共存,从而缓和了热冲击。
在本发明中,作为副成分,还含有R、M和Si时,如果使R的总量相对于主成分100摩尔份为0.1~3.0摩尔份,使M的总量相对于主成分100摩尔份为0.2~5.0摩尔份,则能够进一步提高在施加高温负荷下的可靠性。
另外,在主成分ABO3中,如果分别含有Ba为78~100摩尔%、Sr为0~2摩尔%、Ca为0~20摩尔%、Ti为96~100摩尔%、Zr为0~2摩尔%和Hf为0~2摩尔%,则能够成为获得大的电容率所适合的组成。
附图说明
图1是应用本发明的介电陶瓷构成的层积陶瓷电容器1的剖面图。
图2是表示本发明的介电陶瓷的晶粒的微结构的图。
符号说明
1层积陶瓷电容器
2介电陶瓷层
3、4内部电极
5电容器主体
6、7外部电极
11BaTiO3晶粒
12Mg-Ni-Ti-O系结晶性氧化物粒子
13Ba-Si-O系结晶性氧化物粒子
具体实施方式
图1是表示应用了本发明的介电陶瓷的层积陶瓷电容器1的剖面图。
层积陶瓷电容器1具有电容器主体5,该电容器主体5具有层积的多个介电陶瓷层2和沿着介电陶瓷层2间的特定界面形成的多个内部电极3和4而构成。在电容器5的外表面上的相互不同的位置,形成有第一和第二外部电极6和7。在图1所示的层积陶瓷电容器1中,第一和第二外部电极6和7形成于电容器主体5的相互相对的各端面上。内部电极3和4,是与第一外部电极6电连接的第一内部电极3和与第二外部电极7电连接的第二内部电极4,这些第一和第二内部电极3和4顺着层积方向交替配置。内部电极3和4优选以Ni为主成分。
在这样的层积陶瓷电容器1中,介电陶瓷层2由本发明的介电陶瓷构成。本发明的介电陶瓷含有晶粒和晶界,其组成如下。
首先,将由ABO3(A是Ba,或者是Ba以及选自Sr和Ca中的至少一个,B是Ti,或者是Ti以及选自Zr和Hf中的至少一个)表示的钙钛矿型化合物作为主成分。
在具有这种组成的介电陶瓷中,上述晶粒首先含有由上述主成分构成的ABO3系晶粒。晶粒作为二次相,还含有如下:由至少含有Mg、Ni和Ti的结晶性氧化物构成的含Mg-Ni-Ti结晶性粒子;由至少含有Ba和Si的结晶性氧化物构成的含Ba-Si结晶性粒子。
如此,本发明的介电陶瓷,其晶粒作为二次相,含有含Mg-Ni-Ti结晶性粒子和含Ba-Si系结晶性粒子这两种结晶性粒子。
作为ABO3使用BaTiO3,作为至少含有Mg、Ni和Ti的结晶性氧化物,使用Mg-Ni-Ti-O系结晶性氧化物,作为至少含有Ba和Si的结晶性氧化物,使用Ba-Si-O系结晶性氧化物,就这一实施例,拍摄介电陶瓷的晶粒的微结构,其显示在图2中。
由图2可知,晶粒除了作为主晶粒的BaTiO3晶粒11以外,还具有Mg-Ni-Ti-O系结晶性氧化物粒子12和Ba-Si-O系结晶性氧化物粒子13作为二次相。
具有这样的微结构的介电陶瓷的制造方法没有特别限定。作为一个示例,能够通过将主成分的氧化物粉末和上述两种结晶性氧化物粉末混合,并加以烧成而获得。
在本发明中,至少含有Mg、Ni和Ti的结晶性氧化物,以除去氧的含有率计,优选同时满足Mg为10摩尔%以上,Ni为40摩尔%以上,Ti为5摩尔%以上。另外,至少含有Ba和Si的结晶性氧化物,以除去氧的含有率计,优选同时满足Ba为30摩尔%以上,Si为30摩尔%以上。
只要满足上述的条件,在作为两种二次相粒子的含Mg-Ni-Ti结晶性粒子和含Ba-Si结晶性粒子中,也可以包含譬如稀土类元素等其他元素。
本发明的介电陶瓷,作为副成分,可以还含有R(R包含La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu和Y之中的至少1种。)、M(M包含Mg、Ni、Mn、Co、Fe、Cr、Cu、Al、Mo、W和V之中的至少1种。)、和Si。
在上述情况下,如果使R的总量相对于主成分100摩尔份为0.1~3.0摩尔份,使M的总量相对于主成分100摩尔份为0.2~5.0摩尔份,则能够进一步提高在施加高温负荷下的可靠性。
另外,在主成分ABO3中,如果分别含有Ba为78~100摩尔%,Sr为0~2摩尔%,Ca为0~20摩尔%,Ti为96~100摩尔%,Zr为0~2摩尔%和Hf为0~2摩尔%,则能够成为获得大的电容率所适合的组成。
以下,就基于本发明而实施的实验例进行说明。
(实验例1)
在实验例1中,调查两种二次相粒子的有/无带来的影响。
在实验例1中,另外,作为ABO3使用BaTiO3,作为至少含有Mg、Ni和Ti的结晶性氧化物,使用Mg-Ni-Ti-O系结晶性氧化物,作为至少含有Ba和Si的结晶性氧化物,使用Ba-Si-O系结晶性氧化物。
(A)介电体原料调配物的制作
(A-1)实施例1-1
首先,作为原材料,准备BaCO3和TiO2各粉末,秤量这些粉末使之成为BaTiO3的组成,接着用球磨机混合,以1150℃的温度进行热处理,得到BaTiO3粉末。其平均粒径为0.15μm,Ba/Ti比1.001。
另一方面,秤量MgCO3、NiO和TiO2各粉末,以摩尔比计使之成为25∶60∶15,接着,用球磨机混合,以1000℃的温度进行热处理,得到Mg-Ni-Ti-O系的结晶性氧化物的粉末。以XRD确认该氧化物有结晶性。另外,该结晶性氧化物粉末的平均粒径为0.06μm。
另外,秤量BaCO3和SiO2各粉末,以摩尔比计使之成为50∶50,接着,用球磨机混合,以1000℃的温度进行热处理,得到Ba-Si-O系的结晶性氧化物的粉末。以XRD确认该氧化物有结晶性。另外,该结晶性氧化物粉末的平均粒径为0.07μm。
接下来,以表1所示的“实施例1-1”的重量比秤量上述BaTiO3粉末、Mg-Ni-Ti-O系结晶性氧化物粉末和Ba-Si-O系结晶性氧化物粉末后,用球磨机混合,干燥,由此得到实施例1-1的介电体原料调配物。
(A-2)比较例1-1
如表1的“比较例1-1”所示,不对BaCO3和SiO2各粉末进行热处理,而是直接添加,除此之外均与实施例1-1的情况相同,如此得到比较例1-1的介电体原料调配物。
(A-3)比较例1-2
如表1的“比较例1-2”所示,不对MgCO3、NiO和TiO2各粉末进行热处理,而是直接添加,除此之外均与实施例1-1的情况相同,如此得到比较例1-2的介电体原料调配物。
(A-4)比较例1-3
如表1的“比较例1-3”所示,不对BaCO3和SiO2各粉末进行热处理,而是直接添加,并且不对MgCO3、NiO和TiO2各粉末进行热处理,而是直接添加,除此之外均与实施例1-1的情况相同,如此得到比较例1-3的介电体原料调配物。
【表1】
主成分 | Mg,Ni和Ti的添加形态 | 重量比(wt%) | Ba和Si的添加形态 | 重量比(wt%) | |
实施例1-1 | BaTiO3 | Mg-Ni-Ti-O结晶性氧化物 | 0.15 | Ba-Si-O结晶性氧化物 | 0.1 |
比较例1-1 | BaTiO3 | Mg-Ni-Ti-O结晶性氧化物 | 0.15 | aCO3和SiO2混合物 | 0.1 |
比较例1-2 | BaTiO3 | MgCO3,NiO和TiO2混合物 | 0.15 | Ba-Si-O结晶性氧化物 | 0.1 |
比较例1-3 | BaTiO3 | MgCO3,NiO和TiO2混合物 | 0.15 | BaCO3和SiO2混合物 | 0.1 |
(B)层积陶瓷电容器的制作
在上述介电体原料调配物中,添加聚乙烯醇缩丁醛(polyvinyl butyral)系粘合剂和乙醇(ethanol),用球磨机进行湿式混合,得到陶瓷浆料。以流延法(doctor blade method)将该陶瓷浆料进行薄片成形,将得到的陶瓷基板(ceramic green sheet)切割成规定的形状,得到矩形的陶瓷基板。
接着,在上述的陶瓷基板上,丝网印刷以Ni为主成分的导电膏,形成用于构成内部电极的导电膏膜。
接着,多片层叠形成有导电膜的陶瓷基板,使导电膏膜的拔出侧相互不同,得到未加工的层积体。接着,将该未加工的层积体在N2气氛中加热到300℃的温度,使粘合剂燃烧后,在氧分压10-10MPa的由H2-N2-H2O的气体构成的还原性气氛中,以1150℃的温度烧成2小时,得到烧结的陶瓷层积体。
接着,在上述陶瓷层积体的两端面,涂布含有B2O3-Li2O-SiO2-BaO玻璃粉(glass frit)的Cu膏,在N2气氛中以800℃的温度烘焙,形成与内部电极电连接的外部电极,得到各试料的层积陶瓷电容器。
如此得到的层积陶瓷电容器的外形尺寸为,宽0.8mm、长1.6mm、厚0.8mm,介于内部电极间的介电体陶瓷层的厚度为0.7μm。另外,有效介电体陶瓷层的数量为400,每层的对向电极面积为0.9mm2。
(C)特性评价和陶瓷微结构分析
在温度25℃、1kHz、0.5Vrms的条件下测定电容率。
在1kHz、0.5Vrms的条件下测定相对于温度变化的静电容量的变化率。显示以25℃下的静电容量为基准的-55℃、85℃和125℃下的变化率。
在温度25℃下,外加直流电压6.3V达180秒后,测定绝缘阻抗。然后,求得作为容量和绝缘阻抗的积的CR积。
作为高温负荷寿命试验,以温度105℃,使电场强度为10kV/mm而外加7V的电压,测定绝缘阻抗的经时变化。还有,高温负荷寿命试验对于100个试料进行试验,直至经过1000小时,绝缘阻抗值达到200kΩ以下的试料判定为故障。
热冲击试验,其进行是将试料浸渍在各50个、温度分别设定为275℃和325℃的焊料槽中3分钟。用树脂固定试验后的试料后,进行研磨,用显微镜观察有无裂纹发生。观察到裂纹的试料判断为不良。
为了进行陶瓷微结构分析,利用TEM-EDX对陶瓷截面的任意的粒子进行组成分析,不特定ABO3粒子,而特定至少含有Mg、Ni和Ti的氧化物和至少含有Ba和Si的氧化物粒子。另外,通过TEM的电子射线衍射,确认这些二次相粒子是否有结晶性。
(D)结果
表2中显示陶瓷微结构分析的结果,表3中显示特性评价的结果。
【表2】
【表3】
由表2可知,只在实施例1-1的试料中,Mg-Ni-Ti-O系结晶性氧化物粒子和Ba-Si-O系结晶性氧化物粒子双方都存在。
而且,如上述,只有在Mg-Ni-Ti-O系结晶性氧化物粒子和Ba-Si-O系结晶性氧化物粒子双方都存在的实施例1-1的试料中,由表3可知,在热冲击试验下显示出良好的结果。即,除了通常的275℃以外,即使在再高50℃的325℃之下,也没有发生故障。
(实验例2)
在实验例2中,调查变更主成分的组成带来的影响。即,在实验例2中,作为ABO3使用表4所示的几个组成。
另外,在实验例2中,作为至少含有Mg、Ni和Ti的结晶性氧化物,使用Mg-Ni-Ti-Ba-Li-Mn-O系结晶性氧化物,作为至少含有Ba和Si的结晶性氧化物,使用Ba-Si-Ni-Ti-O系结晶性氧化物。
(A)介电体原料调配物的制作
首先,作为原材料,准备BaCO3、CaCO3、SrCO3、TiO2、ZrO2和HfO2各粉末,秤量这些粉末,使之成为表4的“主成分”一栏中所示的组成,接着,用球磨机加以混合,以1100~1200℃的温度进行热处理,得到ABO3。其平均粒径为0.11~0.17μm。
另一方面,秤量MgCO3、NiO、TiO2、BaCO3、Li2CO3和MnO2各粉末,使之以摩尔比计为13∶55∶13∶2∶16∶1,接着用球磨机加以混合,以1000℃的温度进行热处理,得到Mg-Ni-Ti-Ba-Li-Mn-O系结晶性氧化物的粉末。以XRD确认该氧化物有结晶性。另外,该结晶性氧化物粉末的平均粒径为0.05μm。
另外,秤量BaCO3、SiO2、NiO和TiO2各粉末,使之以摩尔比计为40∶40∶10∶10,接着用球磨机加以混合,以1000℃的温度进行热处理,得到Ba-Si-Ni-Ti-O系的结晶性氧化物的粉末。以XRD确认该氧化物有结晶性。另外,该结晶性氧化物粉末的平均粒径为0.06μm。
接着,按表4所示的组成秤量上述ABO3粉末、Mg-Ni-Ti-Ba-Li-Mn-O系结晶性氧化物粉末和Ba-Si-Ni-Ti-O系的结晶性氧化物粉末,以及作为烧结助剂的SiO2后,用球磨机混合、干燥,由此得到实施例2-1~2-6的各个介电体原料调配物。
如表4所示,相对于主成分100摩尔份,SiO2添加有2摩尔份,这些主成分和SiO2的合计为99.8重量%时,其余的0.2重量%之中,分别各添加有0.1重量%的Mg-Ni-Ti-Ba-Li-Mn-O系结晶性氧化物粉末和Ba-Si-Ni-Ti-O系的结晶性氧化物粉末。
(B)层积陶瓷电容器的制作
经过与实验例1的情况相同的操作,得到具有相同的规格的各试料的层积陶瓷电容器。
(C)特性评价和陶瓷微结构分析
进行与实验例1的情况相同的特性评价和陶瓷微结构分析。
(D)结果
表5中显示陶瓷微结构分析的结果,表6中显示特性评价的结果。
【表5】
【表6】
由表5可知,在实施例2-1~2-6的全部试料中,含有Mg、Ni和Ti的结晶性氧化物粒子以及含有Ba和Si的结晶性氧化物粒子双方都存在。
而且,由表6可知,在实施例2-1~2-6的全部试料中,热冲击试验下均显示出良好的结果。
(实验例3)
在实验例3中,调查变更副成分的种类和量所带来的影响。
即,在实验例3中,作为ABO3使用(Ba0.95Ca0.05)(Ti0.995Zr0.005)O3,至少含有Mg、Ni和Ti的结晶性氧化物,使用Mg-Ni-Ti-O系结晶性氧化物,至少含有Ba和Si的结晶性氧化物,使用Ba-Ti-Ni-Si-Li-O系结晶性氧化物,同时作为副成分,除了Si以外,还添加R(稀土类元素)和M(Mn、Ni、Co、Fe、Cr、Cu、Mg、Al、Mo、W和V之中的至少1种)。
(A)介电体原材料调配物的制作
首先,作为原材料,准备BaCO3、CaCO3、TiO2和ZrO2各粉末,秤量这些粉末,使之成为(Ba0.95Ca0.05)(Ti0.995Zr0.005)O3的组成,接着,用球磨机加以混合,以1150℃的温度进行热处理,得到(Ba0.95Ca0.05)(Ti0.995Zr0.005)O3粉末。其平均粒径为0.16μm。
另一方面,秤量MgCO3、NiO、TiO2各粉末,使之以摩尔比计为25∶60∶15,接着用球磨机加以混合,以1000℃的温度进行热处理,得到Mg-Ni-Ti-O系结晶性氧化物粉末。以XRD确认该氧化物有结晶性。另外,该结晶性氧化物粉末的平均粒径为0.06μm。
秤量BaCO3、SiO2、NiO、TiO2和Li2CO3各粉末,使之以摩尔比计为36∶36∶10∶9∶9,接着用球磨机加以混合,以1000℃的温度进行热处理,得到Ba-Si-Ni-Ti-Li-O系结晶性氧化物粉末。以XRD确认该氧化物有结晶性。另外,该结晶性氧化物粉末的平均粒径为0.06μm。
接着,将SiO2粉末、R氧化物粉末和M氧化物粉末与上述(Ba0.95Ca0.05)(Ti0.995Zr0.005)O3粉末、Mg-Ni-Ti-O系结晶性氧化物粉末和Ba-Si-Ni-Ti-Li-O系结晶性氧化物粉末一起,按表7和8所示的调配比进行秤量后,用球磨机混合、干燥,由此得到实施例3-1~3-19的各介电体原料调配物。
【表8】
表7和表8这两者中显示3-1~3-19的各介电体原料调配物的组成。在表7中显示,以摩尔份计,相对于主成分100摩尔份的R、M和Si的各个添加量,其合计占介电体原料调配物的99.7重量%。在介电体原料调配物的其余的0.3重量%中,如表8所示,由Mg-Ni-Ti-O系结晶性氧化物粉末和Ba-Si-Ni-Ti-Li-O系结晶性氧化物粉末充当。
(B)层积陶瓷电容器的制作
经过与实验例1的情况相同的操作,得到具有相同的规格的各试料的层积陶瓷电容器。
(C)特性评价和陶瓷微结构分析
进行与实验例1的情况相同的特性评价和陶瓷微结构分析。
还有,在高温负荷寿命试验中,不仅对于经过1000小时是否发生故障进行调查,而且对于至经过2000小时是否发生故障也进行调查。
(D)结果
表9中显示陶瓷微结构分析的结果,表10中显示特性评价的结果。
【表9】
【表10】
由表9可知,在实施例3-1~3-19的全部试料中,含有Mg、Ni和Ti的结晶性氧化物粒子以及含有Ba和Si的结晶性氧化物粒子双方都存在。
而且,由表10可知,在实施例3-1~3-19的全部试料中,热冲击试验下均显示出良好的结果。
另外,如表10所示可知,在实施例3-1~3-19的试料中,高温负荷寿命试验的结果是,即使经过1000小时也没有发生故障,与前述的实施例1-1和实施例2-1~2-6的情况相同,显示出优异的可靠性。此外,在该实验例3中,R和M相对于ABO3100摩尔,分别作为元素换算成0.1~3摩尔和0.2~5摩尔的范围的添加量的实施例3-2~3-5和3-7~3-19的试料中,即使经过2000小时也没有发生故障,显示出特别优异的可靠性。
还有,在上述实验例中,为了生成含有Mg-Ni-Ti结晶性粒子和含有Ba-Si结晶性粒子,采用的是预先合成由结晶性氧化物构成的粉末,再混合到ABO3粉末中的方法,但并不限于此方法。譬如,也可以利用内部电极的扩散成分和内部电极所含的陶瓷成分的扩散成分的一部分,生成上述的结晶性粒子。
Claims (6)
1.一种介电陶瓷,其特征在于,包括晶粒和晶界,具有以由ABO3表示的钙钛矿型化合物为主成分的组成,其中,A是Ba,或者是Ba以及选自Sr和Ca中的至少一个,B是Ti,或者是Ti以及选自Zr和Hf中的至少一个,
所述晶粒包括由所述主成分构成的ABO3系晶粒,并且,作为二次相包括:由至少含有Mg、Ni和Ti的结晶性氧化物构成的含Mg-Ni-Ti结晶性粒子,其中,以除去氧的含有率计,同时满足Mg为10摩尔%以上、Ni为40摩尔%以上、Ti为5摩尔%以上;由至少含有Ba和Si的结晶性氧化物构成的含Ba-Si结晶性粒子,其中,以除去氧的含有率计,同时满足Ba为30摩尔%以上,Si为30摩尔%以上。
2.根据权利要求1所述的介电陶瓷,其中,作为副成分,还含有R、M和Si,其中,R包括La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu和Y之中的至少1种,M包括Mg、Ni、Mn、Co、Fe、Cr、Cu、Al、Mo、W和V之中的至少1种。
3.根据权利要求2所述的介电陶瓷,其中,所述R的总量相对于所述主成分100摩尔份为0.1~3.0摩尔份,所述M的总量相对于所述主成分100摩尔份为0.2~5.0摩尔份。
4.根据权利要求1~3中任一项所述的介电陶瓷,其中,在所述主成分ABO3中,所述A以摩尔%计含有Ba:78~100摩尔%、Sr:0~2摩尔%、Ca:0~20摩尔%,所述B以摩尔%计含有Ti:96~100摩尔%、Zr:0~2摩尔%、Hf:0~2摩尔%。
5.一种层积陶瓷电容器,其特征在于,包括电容器主体和第一与第二外部电极,所述电容器主体构成为具有被层积的多个介电陶瓷层和沿着所述介电陶瓷层间的特定界面形成的多个内部电极,所述第一和第二外部电极形成于所述电容器主体的外表面上的相互不同的位置,在所述内部电极中,与所述第一外部电极电连接的内部电极和与所述第二外部电极电连接的内部电极顺着层积方向被交替配置,其中,所述介电陶瓷层由权利要求1~4中任一项所述的介电陶瓷构成。
6.根据权利要求5所述的层积陶瓷电容器,其中,所述内部电极以Ni为主成分。
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