JP5146852B2 - 積層セラミックコンデンサ - Google Patents
積層セラミックコンデンサ Download PDFInfo
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- JP5146852B2 JP5146852B2 JP2010049458A JP2010049458A JP5146852B2 JP 5146852 B2 JP5146852 B2 JP 5146852B2 JP 2010049458 A JP2010049458 A JP 2010049458A JP 2010049458 A JP2010049458 A JP 2010049458A JP 5146852 B2 JP5146852 B2 JP 5146852B2
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- 239000003985 ceramic capacitor Substances 0.000 title claims description 33
- 239000000919 ceramic Substances 0.000 claims description 111
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910002113 barium titanate Inorganic materials 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- -1 barium titanate compound Chemical class 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910006715 Li—O Inorganic materials 0.000 description 35
- 239000000843 powder Substances 0.000 description 35
- 239000002994 raw material Substances 0.000 description 26
- 230000035939 shock Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 23
- 239000000463 material Substances 0.000 description 21
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 18
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 238000009413 insulation Methods 0.000 description 17
- 239000002002 slurry Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 230000002950 deficient Effects 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000011230 binding agent Substances 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229910052788 barium Inorganic materials 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 229910052761 rare earth metal Inorganic materials 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000007606 doctor blade method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 4
- 229910008090 Li-Mn-O Inorganic materials 0.000 description 3
- 229910006369 Li—Mn—O Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910019400 Mg—Li Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 229910007981 Si-Mg Inorganic materials 0.000 description 1
- 229910008316 Si—Mg Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 1
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- H—ELECTRICITY
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- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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Description
(試料番号1)
セラミック素原料として、BaCO3、TiO2を所定量秤量し、これら秤量物をPSZボール及び純水と共にボールミルに投入し、十分に湿式で混合粉砕し、乾燥させた後、1150℃の温度で約2時間、熱処理を行い、これにより平均粒径0.15μmのBa1.03TiO3からなる主成分粉末を作製した。
試料番号1と同様の方法・手順で、Ba1.03TiO3からなる主成分粉末及びMg−Li−O系結晶性酸化物を作製した。
試料番号1と同様の方法・手順で、Ba1.03TiO3を作製した。
試料番号1〜3の各試料について、飛行時間型二次イオン質量分析(time of flight-secondary ion mass spectrometry;以下、「TOF−SIMS」という。)法により任意の研磨断面を分析し、偏析物の成分、及び偏析物の存在位置を確認した。すなわち、イオンビーム(一次イオン)を試料表面に照射し,試料から放出される二次イオンを飛行時間で検出し、各質量における検出量を算出することで物質を同定し、偏析物の成分及び偏析物の存在位置を確認した。
セラミック素原料として、BaCO3、CaCO3、SrCO3、TiO2、ZrO2、HfO2を用意した。そしてこれらセラミック素原料を所定量秤量し、PSZボール及び純水と共にボールミルに投入し、十分に湿式で混合粉砕し、乾燥させた後、1100〜1200℃の温度で約2時間、熱処理し、これにより平均粒径0.11〜0.17μmの主成分粉末を作製した。
試料番号1〜16の各試料について、〔実施例1〕と同様、TOF−SIMS法により偏析物の成分、及び偏析物の存在位置を確認した。
セラミック素原料として、BaCO3、CaCO3、TiO2、及びZrO2を用意した。そしてこれらセラミック素原料を所定量秤量し、PSZボール及び純水と共にボールミルに投入し、十分に湿式で混合粉砕し、乾燥させた後、1150℃の温度で約2時間、熱処理し、これにより平均粒径0.16μmの(Ba0.94Ca0.06)(Ti0.996Zr0.004)O3からなる主成分粉末を作製した。
試料番号21〜39の各試料について、〔実施例1〕と同様、TOF−SIMS法により偏析物の成分、及び偏析物の存在位置を確認した。
6a〜6g 誘電体セラミック層
Claims (3)
- 一般式ABO3で表されるチタン酸バリウム系化合物を主成分とする誘電体セラミック層と、Niを主成分とする内部電極とが交互に積層されてなる積層セラミックコンデンサにおいて、
少なくともMg及びLiを含有した結晶性酸化物が、前記内部電極及び前記誘電体セラミック層のうちの少なくともいずれか一方に存在し、
かつ、前記結晶性酸化物は、70%以上が前記内部電極中のNiに接していることを特徴とする積層セラミックコンデンサ。 - 前記チタン酸バリウム系化合物は、Aサイトが、Baを78〜100モル%、Srを0〜2モル%、Caを0〜20モル%の範囲で含有し、Bサイトが、Tiを96〜100モル%、Zrを0〜2モル%、Hfを0〜2モル%の範囲で含有することを特徴とする請求項1記載の積層セラミックコンデンサ。
- La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu及びYの中から選択された少なくとも1種の元素R、及びMn、Ni、Co、Fe、Cr、Cu、Mg、Li、Al、Mo、W及びVの中から選択された少なくとも1種の元素Mのうちの少なくとも一方を含有し、
前記元素Rの含有量は、前記主成分100モル部に対し0.1〜3.0モル部であり、前記元素Mの含有量は、前記主成分100モル部に対し0.2〜5モル部であることを特徴とする請求項1又は請求項2記載の積層セラミックコンデンサ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010049458A JP5146852B2 (ja) | 2010-03-05 | 2010-03-05 | 積層セラミックコンデンサ |
KR1020110016499A KR101200177B1 (ko) | 2010-03-05 | 2011-02-24 | 적층 세라믹 콘덴서 |
CN2011100520695A CN102222561B (zh) | 2010-03-05 | 2011-03-02 | 层叠陶瓷电容器 |
US13/039,379 US8526164B2 (en) | 2010-03-05 | 2011-03-03 | Laminated ceramic capacitor |
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Application Number | Priority Date | Filing Date | Title |
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JP2010049458A JP5146852B2 (ja) | 2010-03-05 | 2010-03-05 | 積層セラミックコンデンサ |
Publications (2)
Publication Number | Publication Date |
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JP2011187560A JP2011187560A (ja) | 2011-09-22 |
JP5146852B2 true JP5146852B2 (ja) | 2013-02-20 |
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JP2010049458A Active JP5146852B2 (ja) | 2010-03-05 | 2010-03-05 | 積層セラミックコンデンサ |
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US (1) | US8526164B2 (ja) |
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JP5224074B2 (ja) * | 2010-08-04 | 2013-07-03 | 株式会社村田製作所 | 誘電体セラミック、及び積層セラミックコンデンサ |
WO2013047646A1 (ja) * | 2011-09-29 | 2013-04-04 | 株式会社村田製作所 | 積層セラミックコンデンサ、および積層セラミックコンデンサの製造方法 |
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KR101650745B1 (ko) * | 2012-07-10 | 2016-08-24 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 콘덴서 및 그 제조방법 |
KR102183425B1 (ko) * | 2015-07-22 | 2020-11-27 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
JP6955847B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
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JP2020068262A (ja) * | 2018-10-23 | 2020-04-30 | 株式会社村田製作所 | 誘電体磁器組成物及び積層セラミックコンデンサ |
JP7276659B2 (ja) * | 2019-08-27 | 2023-05-18 | Tdk株式会社 | 誘電体組成物および電子部品 |
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