JP2011528308A - シード結晶からキャストシリコンを製造するための方法及び装置 - Google Patents
シード結晶からキャストシリコンを製造するための方法及び装置 Download PDFInfo
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- JP2011528308A JP2011528308A JP2010518295A JP2010518295A JP2011528308A JP 2011528308 A JP2011528308 A JP 2011528308A JP 2010518295 A JP2010518295 A JP 2010518295A JP 2010518295 A JP2010518295 A JP 2010518295A JP 2011528308 A JP2011528308 A JP 2011528308A
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- C30B11/003—Heating or cooling of the melt or the crystallised material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y02E10/547—Monocrystalline silicon PV cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
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- Y10T428/12528—Semiconductor component
Abstract
【選択図】図1A
Description
ルツボの製造:2つの層から構成される支持構造体上にルツボを配置した。支持構造体の底層は、複合体層を支持する80cm×80cm×2.5cmの寸法の固体の等方成形グラファイトプレートであった。上部の複合体層は、60cm×60cm×1.2cmの寸法の伝熱性等方成形グラファイトプレートであり、全ての側部について厚さ1.2cmの断熱性グラファイトファイバーボードの10cmの周縁部によって取り囲まれている内部領域を有していた。このように、複合体層は底層を完全に覆っていた。
実施例1のようにして種付けを行い、大きな単結晶体積を含むインゴットをキャストした。冷却した後、インゴットをその側部を下にして立て、切り出し用の固定ダイアモンド研磨材を有するバンドソー中に装填した。インゴットの底部を、2cmの厚さを有する単一の層として切り出した。次に、この層を切断テーブル上に水平に固定した。同じバンドソー内において、約1.5cmをそれぞれの側部から除去するように層の端部を切り取った。次に、スラブをサンドブラストにかけて接着剤及び異物を除去し、その後、加熱水酸化ナトリウム浴中でエッチングし、すすぎ、HCl浴中に浸漬して金属を除去した。次に、スラブを先のインゴットと同じ寸法の標準的なルツボの底部上に配置した。シリコン供給材料を265kgの全質量に装填し、キャスティングプロセスを繰り返して第2の種付けされたインゴットを製造した。
シードの製造:ルツボの底部の輪郭を描くのに用いた18kgの正方形の(100)プレートから出発してシード層を形成して、58×58cmの被覆領域及び2〜3cmの範囲の厚さを与えた。これらのプレートを一緒に、ルツボ内の中心に位置する大きな正方形に配置した。次に、この正方形を(111)配向シード結晶の厚さ2cmの層によって取り囲んで、全シード層を63cm×63cmの正方形にした。
ルツボの製造:標準的な69cm2のルツボを2層から構成される支持構造体上に配置した。この層は、複合体層の寸法が異なる他は実施例1と同様に構成されていた。底部固体グラファイト層は先のように80×80×2.5cm3の寸法を有していたが、複合体層の伝熱性部分は20×20×1.2cm3の寸法しかなく、底層の頂部上の中心に配置した。底層の残りは断熱性グラファイトファイバーボードで被覆した。
ルツボ及び支持プレートをキャスト装置内に配置し、シリコンの凝固のために更なる時間を与え、より小さな熱引き抜き面積を与えた他は実施例1と同様にサイクル運転した。冷却した後、インゴットを切片にした。切片化されたインゴットの視認検査によって、制御された熱の引き抜きから結晶の強い外向きの成長が確認された。
ルツボの製造:標準的な69cm2のルツボをグラファイト支持プレート上に配置し、供給材料が先のインゴットから再生処理されたシリコンを含まない他は実施例1と同様に、シード層、供給材料、及びドーパントを装填した。次に、69×69×12cm3の寸法を有する溶融シリカリッドをルツボ上に配置した。プロセスガスが導入される頂部の断熱材内の孔に入れ子式のチューブが接続されるように、キャスト装置を改造した。次に充填物を装置中に装填し、持ち上げて入れ子式チューブと接触させた。変更した方法を用いてキャスト装置を運転して、より良好なガスの制御及び変化させた凝固設定によってルツボリッドの効果を相殺するようにした。得られたインゴットを測定すると、通常のインゴットにおいて見られる炭素濃度の1/10の濃度を有しており、鏡状の頂面及び通常のインゴットよりも少なく含有された異物粒子を更に有していた。
Claims (26)
- 伝熱性材料;
熱シンク;及び
断熱性領域;
を含む層の上にルツボを配置し、ここで層の伝熱性部分をルツボの底面の一部と接触させ;
ルツボの底部の上に少なくとも1つのシード結晶を配置し;
溶融シリコンを少なくとも1つのシード結晶と接触させ;そして
伝熱性材料を通して熱を引き抜くことによってシリコン固形体を形成する;
ことを含むキャストシリコンの製造方法。 - 請求項1に記載のキャストシリコンの固形体を提供し;
キャストシリコンの固形体をスライスして少なくとも1つのウエハを形成し;
少なくとも1つのウエハの表面をドープすることによってp−n接合を形成し;そして
ウエハの少なくとも1つの表面の上に、表面中和層を形成し且つ導電性接点を形成する;
ことを含む太陽電池の製造方法。 - 熱の引き抜きによって凝固中に種付けされた結晶の側部領域が膨張する、請求項1に記載の方法。
- 溶融シリコンを配置することが、ルツボ内の固体シリコン供給材料を少なくとも1つのシード結晶の頂部上に配置し、ルツボの底部を冷却して少なくとも1つのシード結晶を少なくとも部分的に固体状態に保持しながら固体シリコン供給材料を溶融することを更に含む、請求項1に記載の方法。
- 層を通る熱流束がシリコンを溶融する工程から固形体を形成する工程へ変化する、請求項4に記載の方法。
- 溶融シリコンを配置することが、
ルツボとは別の溶融容器内でシリコン供給材料を溶融し;
ルツボをシリコンの溶融温度に加熱し;
ルツボ内の少なくとも1つのシード結晶が完全に溶融しないように加熱を制御し;
溶融シリコンを溶融容器からルツボ中へ移す;
ことを更に含む、請求項1に記載の方法。 - 固形体の一部を、少なくとも1つのシード結晶を含むように形成することを更に含む、請求項1に記載の方法。
- 伝熱性材料をルツボの底表面積の約5%〜約99%と接触させる、請求項1に記載の方法。
- 伝熱性材料がルツボ内の少なくとも1つのシード結晶の寸法及び形状に対応する、請求項1に記載の方法。
- 熱シンクが熱を水冷容器の壁に放射する放射熱シンクを含む、請求項1に記載の方法。
- 断熱性領域が伝熱性材料の周りの周縁部を形成する、請求項1に記載の方法。
- 周縁部が、層の角部よりも層の側部の中心において幅のより広い輪郭形状を有する、請求項11に記載の方法。
- 周縁部によってルツボに関する側部支持壁が熱シンクから断熱されている、請求項11に記載の方法。
- 断熱性領域の少なくとも一部を加えるか又は除去することによってルツボの底部と接触している伝熱性領域を減少又は拡大することを更に含む、請求項1に記載の方法。
- ルツボと熱連絡している抵抗加熱器;並びに
伝熱性材料;
熱シンク;及び
断熱性領域;
を含む層;
を含み、ここで層の伝熱性部分は、1つの側においてルツボの底面の一部、及び反対の側において熱シンクと接触している、シリコンをキャストするための装置。 - 断熱性領域が伝熱性材料の周りの周縁部を形成している、請求項15に記載の装置。
- 断熱性領域を導電性材料に対して移動させることによって、層を通して移動する熱を増加又は減少させる、請求項15に記載の装置。
- 伝熱性材料と断熱性領域との熱伝導率の比が少なくとも約20:1である、請求項15に記載の装置。
- シード結晶の面積に対する伝熱性材料の面積の比が約0.5〜約2.0である、請求項15に記載の装置。
- 結晶質シリコンのシード結晶を固体供給材料と一緒に装填し;
固/液界面をシード層の中心上において実質的に平坦であるが、シード層の端部における固体部分において凸状に保持することによって、固体供給材料及びシード結晶の一部を溶融し;
固/液界面をシード結晶の中心上において実質的に平坦であるが、シード層の端部における固体部分において凸状に保持しながら、シード層を通して熱を引き抜くことによってシリコンの固形体を形成し;
固形体を第1の温度にし;そして
固形体を第2の温度に冷却する;
ことを含む、キャストシリコンの製造方法。 - 結晶質シリコンのシード層を固体供給材料と一緒に装填し;
固/液界面をシード層全体の上において実質的に平坦に保持することによって、固体供給材料及びシード層の一部を溶融し;
少なくとも初めはシード層の少なくとも1つの端部の付近において過剰の熱を与えながら、シード層を通して熱を引き抜くことによってシリコンの固形体を形成し;
固形体を第1の温度にし;そして
固形体を第2の温度に冷却する;
ことを含む、キャストシリコンの製造方法。 - 熱シンクの上に載置されているルツボを取り囲むためのシリコンを溶融させるための少なくとも1つの第1の抵抗加熱器;
熱シンクを通して熱を制御して引き抜くための手段;
ガスを導入するための導入口;及び
ルツボ内の異なる領域において誘導加熱を与えるようにルツボを取り囲むための更なる加熱器;
を有する、シリコンをキャストするための装置。 - 更なる加熱器が、少なくとも1つの第1の抵抗加熱器と一緒に配置されている断熱性で水冷の導電性チューブの1つのループを有する、請求項22に記載の装置。
- 更なる加熱器がルツボの壁に対して移動する、請求項22に記載の装置。
- ルツボの底部上に少なくとも1つのシード結晶を更に含む、請求項22に記載の装置。
- 少なくとも約10cm×約10cmの面積の少なくとも1つの単結晶質シード結晶を、部分的に断熱性のベースプレート上に配置されているルツボの底部上に配置し;
液体シリコンを少なくとも1つのシード結晶と接触させて配置し;
凸状の固体境界によって単結晶成長の断面積が増加するようにシード結晶を通して熱を引き抜くことによってシリコンの固形体を形成し;
固形体を第1の温度にし、そして固形体を第2の温度に冷却し;
シード結晶の反対側の固形体の側部からスラブを切り出し;
化学プロセスを用いてスラブを清浄化し;そして
その後のキャスティングプロセスのためのシード層としてスラブを用いる;
ことを含む、キャストシリコンの製造方法。
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JP2012017222A (ja) * | 2010-07-08 | 2012-01-26 | Jx Nippon Mining & Metals Corp | ハイブリッドシリコンウエハ及びその製造方法 |
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JP2015505800A (ja) * | 2011-12-01 | 2015-02-26 | アールイーシー ソーラー プライベート リミテッド | 単結晶シリコンの作製 |
WO2014141473A1 (ja) * | 2013-03-15 | 2014-09-18 | Hiwasa Shoichi | 多結晶シリコンインゴットの製造装置及びその製造方法 |
JP2015120634A (ja) * | 2013-12-20 | 2015-07-02 | 中美▲せき▼晶製品股▲ふん▼有限公司 | 鋳塊鋳造炉に用いる冷却装置及び鋳塊の鋳造方法 |
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US8440157B2 (en) | 2013-05-14 |
JP2010534179A (ja) | 2010-11-04 |
US20100203350A1 (en) | 2010-08-12 |
US20140048012A1 (en) | 2014-02-20 |
US8591851B2 (en) | 2013-11-26 |
EP2179079A1 (en) | 2010-04-28 |
WO2009014961A1 (en) | 2009-01-29 |
US8871169B2 (en) | 2014-10-28 |
CN101755075A (zh) | 2010-06-23 |
US20110129403A1 (en) | 2011-06-02 |
US20100197070A1 (en) | 2010-08-05 |
WO2009014962A1 (en) | 2009-01-29 |
EP2183410A1 (en) | 2010-05-12 |
AU2008279417A1 (en) | 2009-01-29 |
WO2009014963A1 (en) | 2009-01-29 |
AU2008279417B2 (en) | 2012-06-21 |
KR20100049077A (ko) | 2010-05-11 |
TW200909619A (en) | 2009-03-01 |
JP5380442B2 (ja) | 2014-01-08 |
KR20100049078A (ko) | 2010-05-11 |
US20150013591A1 (en) | 2015-01-15 |
AU2008279415A1 (en) | 2009-01-29 |
CN101755077A (zh) | 2010-06-23 |
US20130213297A1 (en) | 2013-08-22 |
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