FR2979357B1 - Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale - Google Patents

Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale

Info

Publication number
FR2979357B1
FR2979357B1 FR1102644A FR1102644A FR2979357B1 FR 2979357 B1 FR2979357 B1 FR 2979357B1 FR 1102644 A FR1102644 A FR 1102644A FR 1102644 A FR1102644 A FR 1102644A FR 2979357 B1 FR2979357 B1 FR 2979357B1
Authority
FR
France
Prior art keywords
heat source
crystalline material
additional heat
side additional
direct crystallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1102644A
Other languages
English (en)
Other versions
FR2979357A1 (fr
Inventor
Jean-Paul Garandet
Anis Jouini
David Pelletier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1102644A priority Critical patent/FR2979357B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to CA2845068A priority patent/CA2845068A1/fr
Priority to US14/240,818 priority patent/US9938633B2/en
Priority to KR1020147008215A priority patent/KR20140062093A/ko
Priority to JP2014527714A priority patent/JP6121422B2/ja
Priority to BR112014003988A priority patent/BR112014003988A2/pt
Priority to EP12762324.7A priority patent/EP2751309A1/fr
Priority to CN201280052983.2A priority patent/CN103890240B/zh
Priority to PCT/FR2012/000346 priority patent/WO2013030470A1/fr
Publication of FR2979357A1 publication Critical patent/FR2979357A1/fr
Application granted granted Critical
Publication of FR2979357B1 publication Critical patent/FR2979357B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Developing Agents For Electrophotography (AREA)
FR1102644A 2011-08-31 2011-08-31 Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale Active FR2979357B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1102644A FR2979357B1 (fr) 2011-08-31 2011-08-31 Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale
US14/240,818 US9938633B2 (en) 2011-08-31 2012-08-31 System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source
KR1020147008215A KR20140062093A (ko) 2011-08-31 2012-08-31 추가 측방 열원이 구비된 방향성 결정화에 의한 결정질 재료의 제조를 위한 시스템
JP2014527714A JP6121422B2 (ja) 2011-08-31 2012-08-31 方向性凝固によって結晶性材料を作製するための、追加の側方熱源が備わったシステム
CA2845068A CA2845068A1 (fr) 2011-08-31 2012-08-31 Methode de fabrication d'un materiau cristallin par solidification directionnelle fournie par une source de chaleur laterale supplementaire
BR112014003988A BR112014003988A2 (pt) 2011-08-31 2012-08-31 sistema de fabricação de um material cristalino por cristalização dirigida munido de uma fonte de calor adicional lateral
EP12762324.7A EP2751309A1 (fr) 2011-08-31 2012-08-31 Système de fabrication d'un matériau cristallin par cristallisation dirigée muni d'une source de chaleur additionnelle latérale
CN201280052983.2A CN103890240B (zh) 2011-08-31 2012-08-31 设置有附加横向热源的通过定向固化制造晶体材料的设备
PCT/FR2012/000346 WO2013030470A1 (fr) 2011-08-31 2012-08-31 Système de fabrication d'un matériau cristallin par cristallisation dirigée muni d'une source de chaleur additionnelle latérale

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1102644A FR2979357B1 (fr) 2011-08-31 2011-08-31 Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale

Publications (2)

Publication Number Publication Date
FR2979357A1 FR2979357A1 (fr) 2013-03-01
FR2979357B1 true FR2979357B1 (fr) 2015-04-24

Family

ID=46889323

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1102644A Active FR2979357B1 (fr) 2011-08-31 2011-08-31 Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale

Country Status (9)

Country Link
US (1) US9938633B2 (fr)
EP (1) EP2751309A1 (fr)
JP (1) JP6121422B2 (fr)
KR (1) KR20140062093A (fr)
CN (1) CN103890240B (fr)
BR (1) BR112014003988A2 (fr)
CA (1) CA2845068A1 (fr)
FR (1) FR2979357B1 (fr)
WO (1) WO2013030470A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
CN106222746A (zh) * 2016-10-17 2016-12-14 宁夏协鑫晶体科技发展有限公司 单晶炉熔料时间缩短装置及方法
CN109280962A (zh) * 2018-11-09 2019-01-29 中国电子科技集团公司第十研究所 一种vgf单晶炉、加热方法及存储介质
CN113174626B (zh) * 2021-04-25 2024-07-23 合肥天曜新材料科技有限公司 一种碲锌镉单晶体的生长方法及装置
WO2024053095A1 (fr) * 2022-09-09 2024-03-14 京セラ株式会社 Dispositif de commande et système de production

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2758038B2 (ja) * 1989-08-24 1998-05-25 三菱化学株式会社 単結晶製造装置
JP2000327487A (ja) * 1999-05-24 2000-11-28 Mitsubishi Materials Corp 結晶シリコンの製造方法及びそれに用いる結晶シリコン製造装置
WO2002053496A1 (fr) * 2000-12-28 2002-07-11 Sumitomo Mitsubishi Silicon Corporation Procede de moulage en continu de silicium
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
CN201133765Y (zh) * 2007-11-30 2008-10-15 上海普罗新能源有限公司 一种多晶硅分凝铸锭炉
US20100148403A1 (en) * 2008-12-16 2010-06-17 Bp Corporation North America Inc. Systems and Methods For Manufacturing Cast Silicon
IT1396761B1 (it) * 2009-10-21 2012-12-14 Saet Spa Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio
CN102021643B (zh) * 2010-09-21 2012-08-15 上海大学 基于交变磁场调制定向凝固液固界面的方法与装置

Also Published As

Publication number Publication date
US9938633B2 (en) 2018-04-10
JP2014525385A (ja) 2014-09-29
CA2845068A1 (fr) 2013-03-07
BR112014003988A2 (pt) 2017-03-07
FR2979357A1 (fr) 2013-03-01
US20140190398A1 (en) 2014-07-10
EP2751309A1 (fr) 2014-07-09
CN103890240B (zh) 2018-04-17
CN103890240A (zh) 2014-06-25
WO2013030470A1 (fr) 2013-03-07
JP6121422B2 (ja) 2017-04-26
WO2013030470A8 (fr) 2014-04-24
KR20140062093A (ko) 2014-05-22

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