IT1396761B1 - Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio - Google Patents

Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio

Info

Publication number
IT1396761B1
IT1396761B1 ITTO2009A000793A ITTO20090793A IT1396761B1 IT 1396761 B1 IT1396761 B1 IT 1396761B1 IT TO2009A000793 A ITTO2009A000793 A IT TO2009A000793A IT TO20090793 A ITTO20090793 A IT TO20090793A IT 1396761 B1 IT1396761 B1 IT 1396761B1
Authority
IT
Italy
Prior art keywords
obtaining
semiconductor material
crystalline semiconductor
particular silicon
silicon
Prior art date
Application number
ITTO2009A000793A
Other languages
English (en)
Inventor
Fabrizio Crivello
Mario Cesano
Paolo Bernabini
Michele Forzan
Fabrizio Dughiero
Dario Ciscato
Original Assignee
Saet Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saet Spa filed Critical Saet Spa
Priority to ITTO2009A000793A priority Critical patent/IT1396761B1/it
Priority to US13/503,272 priority patent/US20120297580A1/en
Priority to CN201080057315XA priority patent/CN102741461A/zh
Priority to KR1020127012944A priority patent/KR20120093968A/ko
Priority to JP2012534787A priority patent/JP5694341B2/ja
Priority to EP10788128.6A priority patent/EP2491169B1/en
Priority to PCT/IB2010/002685 priority patent/WO2011048473A1/en
Publication of ITTO20090793A1 publication Critical patent/ITTO20090793A1/it
Application granted granted Critical
Publication of IT1396761B1 publication Critical patent/IT1396761B1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B22D27/045—Directionally solidified castings
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details peculiar to crucible or pot furnaces
    • F27B14/14—Arrangements of heating devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/24—Crucible furnaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/36—Coil arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/36—Coil arrangements
    • H05B6/367—Coil arrangements for melting furnaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/36—Coil arrangements
    • H05B6/44—Coil arrangements having more than one coil or coil segment
ITTO2009A000793A 2009-10-21 2009-10-21 Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio IT1396761B1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
ITTO2009A000793A IT1396761B1 (it) 2009-10-21 2009-10-21 Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio
US13/503,272 US20120297580A1 (en) 2009-10-21 2010-10-10 Method and device for obtaining a multicrystalline semiconductor material, in particular silicon
CN201080057315XA CN102741461A (zh) 2009-10-21 2010-10-20 用于获取多晶半导体材料，特别是硅的方法和设备
KR1020127012944A KR20120093968A (ko) 2009-10-21 2010-10-20 실리콘으로부터 다결정 반도체 물질을 얻기 위한 방법 및 장치
JP2012534787A JP5694341B2 (ja) 2009-10-21 2010-10-20 多結晶半導体材料、特にシリコンを取得する方法及び装置
EP10788128.6A EP2491169B1 (en) 2009-10-21 2010-10-20 Method and device for obtaining a multicrystalline semiconductor material, in particular silicon
PCT/IB2010/002685 WO2011048473A1 (en) 2009-10-21 2010-10-20 Method and device for obtaining a multicrystalline semiconductor material, in particular silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2009A000793A IT1396761B1 (it) 2009-10-21 2009-10-21 Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio

Publications (2)

Publication Number Publication Date
ITTO20090793A1 ITTO20090793A1 (it) 2011-04-22
IT1396761B1 true IT1396761B1 (it) 2012-12-14

Family

ID=41809193

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2009A000793A IT1396761B1 (it) 2009-10-21 2009-10-21 Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio

Country Status (7)

Country Link
US (1) US20120297580A1 (it)
EP (1) EP2491169B1 (it)
JP (1) JP5694341B2 (it)
KR (1) KR20120093968A (it)
CN (1) CN102741461A (it)
IT (1) IT1396761B1 (it)
WO (1) WO2011048473A1 (it)

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IT1396762B1 (it) * 2009-10-21 2012-12-14 Saet Spa Dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio, e metodo per il controllo della temperatura nello stesso
US20120248286A1 (en) * 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces
US9982361B2 (en) 2011-08-01 2018-05-29 Gtat Corporation Liquid-cooled heat exchanger
US9254589B2 (en) 2011-08-19 2016-02-09 Lg Innotek Co., Ltd. Reaction container and vacuum heat treatment apparatus having the same
FR2979357B1 (fr) * 2011-08-31 2015-04-24 Commissariat Energie Atomique Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale
TWI627131B (zh) * 2012-02-01 2018-06-21 美商希利柯爾材料股份有限公司 矽純化之模具及方法
ITTO20120571A1 (it) * 2012-06-27 2013-12-28 Alessandro Crescenzi Elemento di avvolgimento, e avvolgimento per un forno elettrico ad induzione
KR101411275B1 (ko) * 2012-09-06 2014-06-25 주식회사수성기술 태양전지용 다결정 실리콘 제조장치 및 그 제조방법
ES2499140B1 (es) * 2013-03-26 2015-08-05 Universidad Autónoma de Madrid Aparato y método para la producción de lingotes de silicio porsolidificación direccional
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
US20150023866A1 (en) * 2013-07-22 2015-01-22 Rubicon Technology, Inc. Method and system of producing large oxide crystals from a melt
CN103614772A (zh) * 2013-12-13 2014-03-05 光为绿色新能源股份有限公司 一种多晶硅铸锭加热方法及应用该方法的多晶硅铸锭炉
CN103696002B (zh) * 2013-12-16 2016-06-15 英利集团有限公司 电磁与电阻混合加热的铸锭炉热场结构及使用方法
CN103966657B (zh) * 2014-04-17 2017-04-19 江苏盎华光伏工程技术研究中心有限公司 一种多晶硅和准单晶硅铸锭炉及其使用方法
CN104131342A (zh) * 2014-07-17 2014-11-05 大连理工大学 电磁扰动多晶硅除杂装置及其方法
CN104674342A (zh) * 2015-03-20 2015-06-03 重庆大全新能源有限公司 一种铸锭炉
TWI614473B (zh) * 2015-07-20 2018-02-11 茂迪股份有限公司 長晶爐設備
US9988740B1 (en) * 2016-08-16 2018-06-05 Northrop Grumman Systems Corporation Shaped induction field crystal printer
DE102017005532A1 (de) 2017-06-10 2018-12-13 copperING GmbH Verfahren und Vorrichtung zum induktiven Erwärmen eines Stators oder Ankers einer Elektromaschine
US10589351B2 (en) * 2017-10-30 2020-03-17 United Technologies Corporation Method for magnetic flux compensation in a directional solidification furnace utilizing an actuated secondary coil
US10711367B2 (en) 2017-10-30 2020-07-14 Raytheon Technoiogies Corporation Multi-layer susceptor design for magnetic flux shielding in directional solidification furnaces
US10337121B2 (en) * 2017-10-30 2019-07-02 United Technologies Corporation Separate vessel metal shielding method for magnetic flux in directional solidification furnace
US10760179B2 (en) * 2017-10-30 2020-09-01 Raytheon Technologies Corporation Method for magnetic flux compensation in a directional solidification furnace utilizing a stationary secondary coil
FR3075672B1 (fr) * 2017-12-21 2019-12-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Creuset pour solidification dirigee
CN108441939A (zh) * 2018-03-23 2018-08-24 孟静 稳态晶体生长方法
CN110803705A (zh) * 2018-08-06 2020-02-18 贵州中水材料科技有限公司 一种硅粉的回收方法及其制备的硅锭
CN109379797B (zh) * 2018-12-07 2021-05-25 安徽金月节能科技有限公司 一种节能控温型加热台
KR102583211B1 (ko) * 2021-07-27 2023-09-25 윤승환 가열막대를 포함하는 유도전기 가열장치
CN116440533B (zh) * 2023-06-19 2023-08-29 东莞市瑞辉新材料技术有限公司 一种附带循环控温功能的双酚芴重结晶分离装置

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Also Published As

Publication number Publication date
JP2013508251A (ja) 2013-03-07
EP2491169A1 (en) 2012-08-29
KR20120093968A (ko) 2012-08-23
ITTO20090793A1 (it) 2011-04-22
EP2491169B1 (en) 2015-03-25
CN102741461A (zh) 2012-10-17
JP5694341B2 (ja) 2015-04-01
WO2011048473A1 (en) 2011-04-28
US20120297580A1 (en) 2012-11-29

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