BR112014003988A2 - sistema de fabricação de um material cristalino por cristalização dirigida munido de uma fonte de calor adicional lateral - Google Patents

sistema de fabricação de um material cristalino por cristalização dirigida munido de uma fonte de calor adicional lateral

Info

Publication number
BR112014003988A2
BR112014003988A2 BR112014003988A BR112014003988A BR112014003988A2 BR 112014003988 A2 BR112014003988 A2 BR 112014003988A2 BR 112014003988 A BR112014003988 A BR 112014003988A BR 112014003988 A BR112014003988 A BR 112014003988A BR 112014003988 A2 BR112014003988 A2 BR 112014003988A2
Authority
BR
Brazil
Prior art keywords
crucible
crystalline material
heat source
directed crystallization
manufacture
Prior art date
Application number
BR112014003988A
Other languages
English (en)
Inventor
Jouini Anis
Pelletier David
Garandet Jean-Paul
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of BR112014003988A2 publication Critical patent/BR112014003988A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Developing Agents For Electrophotography (AREA)

Abstract

resumo patente de invenção: "sistema de fabricação de um material cristalino por cristalização dirigida munido de uma fonte de calor adicional lateral". a presente invenção refere-se ao sistema de cristalização dirigida que compreende um crisol (1) munido de um fundo (2) e de paredes laterais (3) destinado a conter o material a solidificar e um dispositivo (4) de criação de um gradiente térmico principal na parte de dentro do crisol (1) em uma direção perpendicular ao fundo (2) do crisol (1). um dispositivo de aquecimento indutivo (6) adicional é disposto ao nível das paredes laterais (3) do crisol (1) em frente ao material líquido e sem recobrimento com a fase sólida. esse dispositivo de aquecimento indutivo (6) adicional é configurado para aquecer uma parte do material cristalino localizada na proximidade da linha tripla entre o material líquido, o material solidificado e o crisol (1) de maneira a que a interface (10) entre o material líquido e o material solidificado forme um menisco convexo na proximidade da linha tripla. 20556336v1
BR112014003988A 2011-08-31 2012-08-31 sistema de fabricação de um material cristalino por cristalização dirigida munido de uma fonte de calor adicional lateral BR112014003988A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1102644A FR2979357B1 (fr) 2011-08-31 2011-08-31 Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale
PCT/FR2012/000346 WO2013030470A1 (fr) 2011-08-31 2012-08-31 Système de fabrication d'un matériau cristallin par cristallisation dirigée muni d'une source de chaleur additionnelle latérale

Publications (1)

Publication Number Publication Date
BR112014003988A2 true BR112014003988A2 (pt) 2017-03-07

Family

ID=46889323

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014003988A BR112014003988A2 (pt) 2011-08-31 2012-08-31 sistema de fabricação de um material cristalino por cristalização dirigida munido de uma fonte de calor adicional lateral

Country Status (9)

Country Link
US (1) US9938633B2 (pt)
EP (1) EP2751309A1 (pt)
JP (1) JP6121422B2 (pt)
KR (1) KR20140062093A (pt)
CN (1) CN103890240B (pt)
BR (1) BR112014003988A2 (pt)
CA (1) CA2845068A1 (pt)
FR (1) FR2979357B1 (pt)
WO (1) WO2013030470A1 (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
CN106222746A (zh) * 2016-10-17 2016-12-14 宁夏协鑫晶体科技发展有限公司 单晶炉熔料时间缩短装置及方法
CN109280962A (zh) * 2018-11-09 2019-01-29 中国电子科技集团公司第十研究所 一种vgf单晶炉、加热方法及存储介质
CN113174626A (zh) * 2021-04-25 2021-07-27 合肥庞碲新材料科技有限公司 一种碲锌镉单晶体的生长方法及装置
WO2024053095A1 (ja) * 2022-09-09 2024-03-14 京セラ株式会社 制御装置及び製造システム

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2758038B2 (ja) * 1989-08-24 1998-05-25 三菱化学株式会社 単結晶製造装置
JP2000327487A (ja) * 1999-05-24 2000-11-28 Mitsubishi Materials Corp 結晶シリコンの製造方法及びそれに用いる結晶シリコン製造装置
EP1254861B1 (en) * 2000-12-28 2008-01-30 Sumco Corporation Silicon continuous casting method
CN101755075A (zh) * 2007-07-20 2010-06-23 Bp北美公司 从籽晶制造浇铸硅的方法和装置
CN201133765Y (zh) * 2007-11-30 2008-10-15 上海普罗新能源有限公司 一种多晶硅分凝铸锭炉
WO2010077844A1 (en) * 2008-12-16 2010-07-08 Bp Corporation North America Inc. Systems and methods for manufacturing cast silicon
IT1396761B1 (it) * 2009-10-21 2012-12-14 Saet Spa Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio
CN102021643B (zh) * 2010-09-21 2012-08-15 上海大学 基于交变磁场调制定向凝固液固界面的方法与装置

Also Published As

Publication number Publication date
KR20140062093A (ko) 2014-05-22
FR2979357B1 (fr) 2015-04-24
EP2751309A1 (fr) 2014-07-09
CN103890240B (zh) 2018-04-17
US20140190398A1 (en) 2014-07-10
JP6121422B2 (ja) 2017-04-26
US9938633B2 (en) 2018-04-10
WO2013030470A1 (fr) 2013-03-07
JP2014525385A (ja) 2014-09-29
CA2845068A1 (en) 2013-03-07
CN103890240A (zh) 2014-06-25
WO2013030470A8 (fr) 2014-04-24
FR2979357A1 (fr) 2013-03-01

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according art. 34 industrial property law
B06U Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements