JP2011527071A5 - - Google Patents
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- JP2011527071A5 JP2011527071A5 JP2011516835A JP2011516835A JP2011527071A5 JP 2011527071 A5 JP2011527071 A5 JP 2011527071A5 JP 2011516835 A JP2011516835 A JP 2011516835A JP 2011516835 A JP2011516835 A JP 2011516835A JP 2011527071 A5 JP2011527071 A5 JP 2011527071A5
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Claims (10)
- フラッシュ・メモリ・デバイスを読み取るための方法であって、
少なくとも1つのターゲット・セルに関する読み取り値を獲得すること、
前記ターゲット・セルより後にプログラミングされた少なくとも1つのアグレッサ・セルの中に格納された電圧を表す値を獲得すること、
前記少なくとも1つのアグレッサ・セルからの前記ターゲット・セルに関するセル間干渉を算出すること、および
前記読み取り値から前記算出されたセル間干渉を除去することによって前記ターゲット・セルの中に格納されたデータを表す新たな読み取り値を計算することを備える方法。 - 少なくとも1つのアグレッサ・セルの中に格納された電圧を表す前記値は、測定された値、予期される値、推定される値、平均値、量子化された値、および検出された値の1つまたは複数を備える請求項1に記載の方法。
- 復号誤りが生じた場合、1つまたは複数のセル間干渉軽減パラメータを調整するステップをさらに備える請求項1に記載の方法。
- 前記セル間干渉軽減パラメータは、考慮されるアグレッサ・セルの数を備える請求項3に記載の方法。
- 前記セル間干渉軽減パラメータは、ハード電圧値に加えてソフト電圧値を使用することを備える請求項3に記載の方法。
- 前記少なくとも1つのアグレッサ・セルは、前記ターゲット・セルに隣接する1つまたは複数のセルを備える請求項1に記載の方法。
- 前記算出するステップは、少なくとも1つのアグレッサ・セルの中に格納された電圧を表す前記値に基づいて、セル間干渉を計算する請求項1に記載の方法。
- 少なくとも1つのアグレッサ・セルの中に格納された電圧を表す前記値は、前記アグレッサ・セルが前記ターゲット・セルと同一のページまたは同一のワード線にある場合、測定された値を備え、さらに少なくとも1つのアグレッサ・セルの中に格納された電圧を表す前記値は、前記アグレッサ・セルが前記ターゲット・セルと異なるページまたは異なるワード線にある場合、推定される値を備える請求項1に記載の方法。
- マルチステップ・ページ・プログラミング・シーケンスの1つまたは複数のステップに適用される請求項1に記載の方法。
- フラッシュ・メモリ・デバイスを読み取るためのシステムであって、
メモリと、
前記メモリに結合され、
少なくとも1つのターゲット・セルに関する読み取り値を獲得し、
前記ターゲット・セルより後にプログラミングされた少なくとも1つのアグレッサ・セルの中に格納された電圧を表す値を獲得し、
前記少なくとも1つのアグレッサ・セルからの前記ターゲット・セルに関するセル間干渉を算出し、さらに
前記読み取り値から前記算出されたセル間干渉を除去することによって前記ターゲット・セルの中に格納されたデータを表す新たな読み取り値を計算するように動作する少なくとも1つのプロセッサとを備えるシステム。
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13367508P | 2008-07-01 | 2008-07-01 | |
US61/133,675 | 2008-07-01 | ||
US13392108P | 2008-07-07 | 2008-07-07 | |
US61/133,921 | 2008-07-07 | ||
US13468808P | 2008-07-10 | 2008-07-10 | |
US61/134,688 | 2008-07-10 | ||
US13573208P | 2008-07-22 | 2008-07-22 | |
US61/135,732 | 2008-07-22 | ||
US19475108P | 2008-09-30 | 2008-09-30 | |
US61/194,751 | 2008-09-30 | ||
PCT/US2009/049326 WO2010002941A1 (en) | 2008-07-01 | 2009-06-30 | Methods and apparatus for read-side intercell interference mitigation in flash memories |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011527071A JP2011527071A (ja) | 2011-10-20 |
JP2011527071A5 true JP2011527071A5 (ja) | 2012-08-16 |
JP5710474B2 JP5710474B2 (ja) | 2015-04-30 |
Family
ID=40957821
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011516835A Expired - Fee Related JP5710474B2 (ja) | 2008-07-01 | 2009-06-30 | フラッシュ・メモリにおける読み取り側セル間干渉軽減のための方法および装置 |
JP2011516836A Expired - Fee Related JP5496191B2 (ja) | 2008-07-01 | 2009-06-30 | フラッシュ・メモリにおける書き込み側セル間干渉軽減のための方法および装置 |
JP2011516838A Expired - Fee Related JP5621175B2 (ja) | 2008-07-01 | 2009-06-30 | 変調コーディングを使用するセル間干渉軽減のための方法および装置 |
JP2011516840A Expired - Fee Related JP5710475B2 (ja) | 2008-07-01 | 2009-06-30 | フラッシュ・メモリにおけるソフト・デマッピングおよびセル間干渉軽減のための方法および装置 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011516836A Expired - Fee Related JP5496191B2 (ja) | 2008-07-01 | 2009-06-30 | フラッシュ・メモリにおける書き込み側セル間干渉軽減のための方法および装置 |
JP2011516838A Expired - Fee Related JP5621175B2 (ja) | 2008-07-01 | 2009-06-30 | 変調コーディングを使用するセル間干渉軽減のための方法および装置 |
JP2011516840A Expired - Fee Related JP5710475B2 (ja) | 2008-07-01 | 2009-06-30 | フラッシュ・メモリにおけるソフト・デマッピングおよびセル間干渉軽減のための方法および装置 |
Country Status (8)
Country | Link |
---|---|
US (4) | US8526230B2 (ja) |
EP (4) | EP2308058B1 (ja) |
JP (4) | JP5710474B2 (ja) |
KR (4) | KR101675170B1 (ja) |
CN (4) | CN102132350B (ja) |
IL (3) | IL210396A0 (ja) |
TW (4) | TWI501238B (ja) |
WO (4) | WO2010002942A1 (ja) |
Families Citing this family (122)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8050086B2 (en) | 2006-05-12 | 2011-11-01 | Anobit Technologies Ltd. | Distortion estimation and cancellation in memory devices |
WO2007132456A2 (en) | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Memory device with adaptive capacity |
US8595573B2 (en) | 2006-12-03 | 2013-11-26 | Apple Inc. | Automatic defect management in memory devices |
US8369141B2 (en) | 2007-03-12 | 2013-02-05 | Apple Inc. | Adaptive estimation of memory cell read thresholds |
US8234545B2 (en) | 2007-05-12 | 2012-07-31 | Apple Inc. | Data storage with incremental redundancy |
WO2008139441A2 (en) | 2007-05-12 | 2008-11-20 | Anobit Technologies Ltd. | Memory device with internal signal processing unit |
US8259497B2 (en) | 2007-08-06 | 2012-09-04 | Apple Inc. | Programming schemes for multi-level analog memory cells |
US8174905B2 (en) | 2007-09-19 | 2012-05-08 | Anobit Technologies Ltd. | Programming orders for reducing distortion in arrays of multi-level analog memory cells |
US8300478B2 (en) | 2007-09-19 | 2012-10-30 | Apple Inc. | Reducing distortion using joint storage |
US8527819B2 (en) | 2007-10-19 | 2013-09-03 | Apple Inc. | Data storage in analog memory cell arrays having erase failures |
KR101509836B1 (ko) | 2007-11-13 | 2015-04-06 | 애플 인크. | 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택 |
US8225181B2 (en) * | 2007-11-30 | 2012-07-17 | Apple Inc. | Efficient re-read operations from memory devices |
US8209588B2 (en) | 2007-12-12 | 2012-06-26 | Anobit Technologies Ltd. | Efficient interference cancellation in analog memory cell arrays |
US8456905B2 (en) | 2007-12-16 | 2013-06-04 | Apple Inc. | Efficient data storage in multi-plane memory devices |
US8230300B2 (en) * | 2008-03-07 | 2012-07-24 | Apple Inc. | Efficient readout from analog memory cells using data compression |
US8493783B2 (en) | 2008-03-18 | 2013-07-23 | Apple Inc. | Memory device readout using multiple sense times |
US8400858B2 (en) | 2008-03-18 | 2013-03-19 | Apple Inc. | Memory device with reduced sense time readout |
US8526230B2 (en) * | 2008-07-01 | 2013-09-03 | Lsi Corporation | Methods and apparatus for write-side intercell interference mitigation in flash memories |
US7995388B1 (en) | 2008-08-05 | 2011-08-09 | Anobit Technologies Ltd. | Data storage using modified voltages |
US8949684B1 (en) | 2008-09-02 | 2015-02-03 | Apple Inc. | Segmented data storage |
US8482978B1 (en) | 2008-09-14 | 2013-07-09 | Apple Inc. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8239734B1 (en) | 2008-10-15 | 2012-08-07 | Apple Inc. | Efficient data storage in storage device arrays |
US8261159B1 (en) | 2008-10-30 | 2012-09-04 | Apple, Inc. | Data scrambling schemes for memory devices |
US8208304B2 (en) | 2008-11-16 | 2012-06-26 | Anobit Technologies Ltd. | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N |
US8174857B1 (en) | 2008-12-31 | 2012-05-08 | Anobit Technologies Ltd. | Efficient readout schemes for analog memory cell devices using multiple read threshold sets |
US8248831B2 (en) | 2008-12-31 | 2012-08-21 | Apple Inc. | Rejuvenation of analog memory cells |
US8924661B1 (en) | 2009-01-18 | 2014-12-30 | Apple Inc. | Memory system including a controller and processors associated with memory devices |
KR101602316B1 (ko) * | 2009-02-09 | 2016-03-22 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 데이터 처리 방법 |
US8023345B2 (en) * | 2009-02-24 | 2011-09-20 | International Business Machines Corporation | Iteratively writing contents to memory locations using a statistical model |
US8228701B2 (en) * | 2009-03-01 | 2012-07-24 | Apple Inc. | Selective activation of programming schemes in analog memory cell arrays |
US8832354B2 (en) | 2009-03-25 | 2014-09-09 | Apple Inc. | Use of host system resources by memory controller |
US8259506B1 (en) | 2009-03-25 | 2012-09-04 | Apple Inc. | Database of memory read thresholds |
US8179731B2 (en) | 2009-03-27 | 2012-05-15 | Analog Devices, Inc. | Storage devices with soft processing |
US8238157B1 (en) | 2009-04-12 | 2012-08-07 | Apple Inc. | Selective re-programming of analog memory cells |
US8479080B1 (en) | 2009-07-12 | 2013-07-02 | Apple Inc. | Adaptive over-provisioning in memory systems |
US8386739B2 (en) * | 2009-09-28 | 2013-02-26 | International Business Machines Corporation | Writing to memory using shared address buses |
US8495465B1 (en) | 2009-10-15 | 2013-07-23 | Apple Inc. | Error correction coding over multiple memory pages |
US8677054B1 (en) | 2009-12-16 | 2014-03-18 | Apple Inc. | Memory management schemes for non-volatile memory devices |
US8694814B1 (en) | 2010-01-10 | 2014-04-08 | Apple Inc. | Reuse of host hibernation storage space by memory controller |
US8677203B1 (en) | 2010-01-11 | 2014-03-18 | Apple Inc. | Redundant data storage schemes for multi-die memory systems |
KR101678404B1 (ko) * | 2010-02-25 | 2016-11-23 | 삼성전자주식회사 | 사전 확률 정보를 사용하는 메모리 시스템 및 그것의 데이터 처리 방법 |
KR101710663B1 (ko) * | 2010-03-02 | 2017-02-28 | 삼성전자주식회사 | 메모리 시스템 및 그것의 동작 방법 |
US8463985B2 (en) * | 2010-03-31 | 2013-06-11 | International Business Machines Corporation | Constrained coding to reduce floating gate coupling in non-volatile memories |
US8775913B2 (en) | 2010-03-31 | 2014-07-08 | Lsi Corporation | Methods and apparatus for computing soft data or log likelihood ratios for received values in communication or storage systems |
US8504885B2 (en) | 2010-03-31 | 2013-08-06 | Lsi Corporation | Methods and apparatus for approximating a probability density function or distribution for a received value in communication or storage systems |
US8429500B2 (en) | 2010-03-31 | 2013-04-23 | Lsi Corporation | Methods and apparatus for computing a probability value of a received value in communication or storage systems |
US8694853B1 (en) | 2010-05-04 | 2014-04-08 | Apple Inc. | Read commands for reading interfering memory cells |
US8406051B2 (en) * | 2010-05-17 | 2013-03-26 | Seagate Technology Llc | Iterative demodulation and decoding for multi-page memory architecture |
US8572423B1 (en) | 2010-06-22 | 2013-10-29 | Apple Inc. | Reducing peak current in memory systems |
US8595591B1 (en) | 2010-07-11 | 2013-11-26 | Apple Inc. | Interference-aware assignment of programming levels in analog memory cells |
US9104580B1 (en) | 2010-07-27 | 2015-08-11 | Apple Inc. | Cache memory for hybrid disk drives |
US8645794B1 (en) | 2010-07-31 | 2014-02-04 | Apple Inc. | Data storage in analog memory cells using a non-integer number of bits per cell |
US8856475B1 (en) | 2010-08-01 | 2014-10-07 | Apple Inc. | Efficient selection of memory blocks for compaction |
KR101678888B1 (ko) * | 2010-08-06 | 2016-12-07 | 삼성전자주식회사 | 비휘발성 메모리 장치의 데이터 판독 방법 |
US8493781B1 (en) | 2010-08-12 | 2013-07-23 | Apple Inc. | Interference mitigation using individual word line erasure operations |
WO2012023102A1 (en) * | 2010-08-17 | 2012-02-23 | Technion R&D Foundation | Mitigating inter-cell coupling effects in non volatile memory (nvm) cells |
US8694854B1 (en) | 2010-08-17 | 2014-04-08 | Apple Inc. | Read threshold setting based on soft readout statistics |
US8964464B2 (en) * | 2010-08-24 | 2015-02-24 | Densbits Technologies Ltd. | System and method for accelerated sampling |
US9021181B1 (en) | 2010-09-27 | 2015-04-28 | Apple Inc. | Memory management for unifying memory cell conditions by using maximum time intervals |
US9082480B2 (en) | 2011-01-04 | 2015-07-14 | Seagate Technology Llc | Detection and decoding in flash memories with error correlations for a plurality of bits within a sliding window |
US8854880B2 (en) | 2011-01-04 | 2014-10-07 | Lsi Corporation | Inter-cell interference cancellation in flash memories |
US9898361B2 (en) | 2011-01-04 | 2018-02-20 | Seagate Technology Llc | Multi-tier detection and decoding in flash memories |
US9106264B2 (en) | 2011-01-04 | 2015-08-11 | Lsi Corporation | Encoding and decoding in flash memories using convolutional-type low-density parity check codes |
US9292377B2 (en) | 2011-01-04 | 2016-03-22 | Seagate Technology Llc | Detection and decoding in flash memories using correlation of neighboring bits and probability based reliability values |
US9502117B2 (en) | 2011-03-14 | 2016-11-22 | Seagate Technology Llc | Cell-level statistics collection for detection and decoding in flash memories |
US8780659B2 (en) | 2011-05-12 | 2014-07-15 | Micron Technology, Inc. | Programming memory cells |
US8549380B2 (en) * | 2011-07-01 | 2013-10-01 | Intel Corporation | Non-volatile memory error mitigation |
US9076547B2 (en) | 2012-04-05 | 2015-07-07 | Micron Technology, Inc. | Level compensation in multilevel memory |
US9030870B2 (en) | 2011-08-26 | 2015-05-12 | Micron Technology, Inc. | Threshold voltage compensation in a multilevel memory |
US9117529B2 (en) * | 2011-12-23 | 2015-08-25 | Hgst Technologies Santa Ana, Inc. | Inter-cell interference algorithms for soft decoding of LDPC codes |
TWI514404B (zh) * | 2012-02-24 | 2015-12-21 | Silicon Motion Inc | 讀取快閃記憶體中所儲存之資料的方法、記憶體控制器與系統 |
KR101962786B1 (ko) | 2012-03-23 | 2019-03-27 | 삼성전자주식회사 | 불휘발성 메모리 장치, 메모리 시스템 및 그것의 프로그램 방법 |
US9136011B2 (en) | 2012-04-26 | 2015-09-15 | Hgst Technologies Santa Ana, Inc. | Soft information module |
KR102089570B1 (ko) | 2012-06-04 | 2020-03-16 | 삼성전자주식회사 | 저장 장치 및 그것의 데이터 처리 방법 |
US8824203B2 (en) * | 2012-07-13 | 2014-09-02 | Micron Technology, Inc. | Multiple step programming in a memory device |
KR101762885B1 (ko) | 2012-11-09 | 2017-07-28 | 존슨 컨트롤스 테크놀러지 컴퍼니 | 연장된 경로를 갖는 가변 기하학적 디퓨저 및 그 제어방법 |
CN103811077B (zh) * | 2012-11-12 | 2017-03-29 | 光宝电子(广州)有限公司 | 闪存中的资料补偿方法 |
US9021332B2 (en) * | 2012-12-11 | 2015-04-28 | Seagate Technology Llc | Flash memory read error recovery with soft-decision decode |
CN104919433B (zh) | 2013-01-11 | 2017-10-31 | 英派尔科技开发有限公司 | 用于闪存的页面分配 |
US9355716B2 (en) | 2013-01-17 | 2016-05-31 | University Of Hawaii | Memory channel detector systems and methods |
US20150170754A1 (en) * | 2013-01-17 | 2015-06-18 | Empire Technology Development Llc | Mitigating Inter-Cell Interference |
CN103971750B (zh) * | 2013-01-29 | 2017-02-08 | 中国航空工业集团公司西安飞机设计研究所 | 一种ram的9相邻单元敏感故障检测方法 |
US9424946B2 (en) | 2013-02-08 | 2016-08-23 | Seagate Technology Llc | Non-volatile buffering to enable sloppy writes and fast write verification |
US9142309B2 (en) * | 2013-02-19 | 2015-09-22 | Sk Hynix Memory Solutions Inc. | Generation of a composite read based on neighboring data |
CN105074826B (zh) * | 2013-02-27 | 2018-01-16 | 英派尔科技开发有限公司 | 存储器装置的基于线性规划的解码 |
US9129711B2 (en) | 2013-02-28 | 2015-09-08 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US8990668B2 (en) * | 2013-03-14 | 2015-03-24 | Western Digital Technologies, Inc. | Decoding data stored in solid-state memory |
KR102168096B1 (ko) * | 2013-03-15 | 2020-10-20 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 데이터 쓰기 방법 |
KR102067611B1 (ko) | 2013-03-15 | 2020-01-20 | 삼성전자주식회사 | 메모리 컨트롤러의 동작 방법과 상기 메모리 컨트롤러를 포함하는 장치들 |
CN104112477B (zh) * | 2013-04-19 | 2017-07-07 | 光宝科技股份有限公司 | 用于固态储存装置中晶体单元的群组区分方法 |
KR20150018291A (ko) | 2013-08-09 | 2015-02-23 | 에스케이하이닉스 주식회사 | 메모리 시스템 |
KR102149770B1 (ko) * | 2013-08-26 | 2020-08-31 | 삼성전자주식회사 | 메모리 컨트롤러 및 그것의 동작 방법 |
US9164828B2 (en) | 2013-09-26 | 2015-10-20 | Seagate Technology Llc | Systems and methods for enhanced data recovery in a solid state memory system |
KR102204394B1 (ko) * | 2013-10-14 | 2021-01-19 | 삼성전자주식회사 | 메모리 시스템에서의 코딩 방법 및 디코딩 방법 |
US9218851B2 (en) * | 2013-10-24 | 2015-12-22 | Sandisk Technologies Inc. | Power drop protection for a data storage device |
TWI527048B (zh) | 2013-11-29 | 2016-03-21 | 慧榮科技股份有限公司 | 應用於快閃記憶體裝置的錯誤更正碼單元、自我測試方法及相關的控制器 |
US9859925B2 (en) | 2013-12-13 | 2018-01-02 | Empire Technology Development Llc | Low-complexity flash memory data-encoding techniques using simplified belief propagation |
US9798613B2 (en) | 2013-12-27 | 2017-10-24 | Toshiba Memory Corporation | Controller of nonvolatile semiconductor memory |
US9645763B2 (en) | 2014-01-13 | 2017-05-09 | Seagate Technology Llc | Framework for balancing robustness and latency during collection of statistics from soft reads |
US9911492B2 (en) | 2014-01-17 | 2018-03-06 | International Business Machines Corporation | Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write period |
JP6262063B2 (ja) * | 2014-03-18 | 2018-01-17 | 東芝メモリ株式会社 | 不揮発性メモリおよび書き込み方法 |
US9349477B2 (en) | 2014-06-16 | 2016-05-24 | Seagate Technology Llc | Inter-cell interference estimation based on a pattern dependent histogram |
US9343170B2 (en) | 2014-06-24 | 2016-05-17 | Hgst Technologies Santa Ana, Inc. | Word-line inter-cell interference detector in flash system |
KR102246843B1 (ko) * | 2015-01-15 | 2021-05-03 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
US9613664B2 (en) * | 2015-01-20 | 2017-04-04 | Samsung Electronics Co., Ltd. | Method of operating memory device including multi-level memory cells |
KR102298607B1 (ko) * | 2015-02-17 | 2021-09-06 | 삼성전자주식회사 | 저항성 메모리 시스템 및 저항성 메모리 시스템의 동작 방법 |
US9595317B2 (en) * | 2015-05-28 | 2017-03-14 | Sandisk Technologies Llc | Multi-state programming for non-volatile memory |
DE112016002451T5 (de) * | 2015-06-01 | 2018-03-01 | Sony Corporation | Datenverarbeitungsvorrichtung und Datenverarbeitungsverfahren |
US9734912B2 (en) | 2015-11-25 | 2017-08-15 | Macronix International Co., Ltd. | Reprogramming single bit memory cells without intervening erasure |
US9704594B1 (en) | 2016-02-18 | 2017-07-11 | Western Digital Technolgies, Inc. | Inter-cell interference reduction in flash memory devices |
JP6606039B2 (ja) | 2016-09-09 | 2019-11-13 | 東芝メモリ株式会社 | メモリシステムおよび制御方法 |
JP2018163709A (ja) | 2017-03-24 | 2018-10-18 | 東芝メモリ株式会社 | メモリシステム |
CN107403643B (zh) * | 2017-07-17 | 2019-12-24 | 华中科技大学 | 一种通过重定向提高3d fg nand闪存可靠性的方法 |
CN108511021B (zh) * | 2018-03-26 | 2020-10-27 | 上海华虹宏力半导体制造有限公司 | 一种虚拟接地闪存读取电路 |
KR102080089B1 (ko) * | 2018-05-18 | 2020-02-21 | 최영준 | 정전시 전력 소모를 감소시키기 위한 데이터 저장 방법 및 데이터 저장 장치 |
KR102565913B1 (ko) * | 2018-06-12 | 2023-08-11 | 에스케이하이닉스 주식회사 | 저장 장치 및 메모리 컨트롤러를 포함하는 메모리 시스템 및 이의 동작 방법 |
JP7066584B2 (ja) | 2018-09-18 | 2022-05-13 | キオクシア株式会社 | メモリシステム |
US10770155B2 (en) | 2018-10-11 | 2020-09-08 | International Business Machines Corporation | Determining a read apparent voltage infector page and infected page |
US10878912B1 (en) | 2019-08-02 | 2020-12-29 | Kabushiki Kaisha Toshiba | Multi-cell modulation for flash memory |
US11621033B2 (en) * | 2020-01-14 | 2023-04-04 | Micron Technology, Inc. | Techniques for low power operation |
US11556416B2 (en) | 2021-05-05 | 2023-01-17 | Apple Inc. | Controlling memory readout reliability and throughput by adjusting distance between read thresholds |
US11847342B2 (en) | 2021-07-28 | 2023-12-19 | Apple Inc. | Efficient transfer of hard data and confidence levels in reading a nonvolatile memory |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313421A (en) | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5867429A (en) * | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
EP0948140B1 (en) * | 1998-04-03 | 2006-03-22 | Agere Systems Inc. | Iterative demapping and decoding of multilevel modulated signal |
US6781877B2 (en) * | 2002-09-06 | 2004-08-24 | Sandisk Corporation | Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells |
US6944063B2 (en) * | 2003-01-28 | 2005-09-13 | Sandisk Corporation | Non-volatile semiconductor memory with large erase blocks storing cycle counts |
JP4005000B2 (ja) * | 2003-07-04 | 2007-11-07 | 株式会社東芝 | 半導体記憶装置及びデータ書き込み方法。 |
JP2007533195A (ja) * | 2004-04-09 | 2007-11-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 変調コードシステム並びに信号をコード化及びデコードする方法 |
US6980140B1 (en) * | 2004-06-18 | 2005-12-27 | Nortel Networks Limited | Flash ADC receiver with reduced errors |
JP4410188B2 (ja) | 2004-11-12 | 2010-02-03 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法 |
US7251160B2 (en) | 2005-03-16 | 2007-07-31 | Sandisk Corporation | Non-volatile memory and method with power-saving read and program-verify operations |
US7187585B2 (en) * | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
US7526715B2 (en) * | 2005-10-17 | 2009-04-28 | Ramot At Tel Aviv University Ltd. | Probabilistic error correction in multi-bit-per-cell flash memory |
JP4800901B2 (ja) | 2005-12-12 | 2011-10-26 | 矢崎総業株式会社 | 電圧検出装置及び絶縁インタフェース |
JP4734110B2 (ja) * | 2005-12-14 | 2011-07-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP4177847B2 (ja) * | 2006-01-06 | 2008-11-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8055979B2 (en) | 2006-01-20 | 2011-11-08 | Marvell World Trade Ltd. | Flash memory with coding and signal processing |
US7400532B2 (en) | 2006-02-16 | 2008-07-15 | Micron Technology, Inc. | Programming method to reduce gate coupling interference for non-volatile memory |
US7388781B2 (en) * | 2006-03-06 | 2008-06-17 | Sandisk Il Ltd. | Multi-bit-per-cell flash memory device with non-bijective mapping |
US7971130B2 (en) * | 2006-03-31 | 2011-06-28 | Marvell International Ltd. | Multi-level signal memory with LDPC and interleaving |
WO2007132457A2 (en) | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Combined distortion estimation and error correction coding for memory devices |
US8050086B2 (en) | 2006-05-12 | 2011-11-01 | Anobit Technologies Ltd. | Distortion estimation and cancellation in memory devices |
JP5095131B2 (ja) * | 2006-05-31 | 2012-12-12 | 株式会社東芝 | 半導体記憶装置 |
JP4912460B2 (ja) | 2006-06-19 | 2012-04-11 | サンディスク コーポレイション | 不揮発性メモリの読み出し動作改善における個別サイズマージンのプログラムおよび選択状態時の補償による検知 |
WO2008011440A2 (en) * | 2006-07-20 | 2008-01-24 | Sandisk Corporation | Floating gate memory with compensating for coupling during programming |
ATE522905T1 (de) * | 2006-07-20 | 2011-09-15 | Sandisk Corp | Kompensation für die kopplung zwischen benachbarten speicherelementen in einem nichtflüchtigen speicher auf der basis der abtastung eines nachbarn mit kopplung |
US7894269B2 (en) | 2006-07-20 | 2011-02-22 | Sandisk Corporation | Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells |
JP4764288B2 (ja) * | 2006-08-22 | 2011-08-31 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR100800378B1 (ko) * | 2006-08-24 | 2008-02-01 | 삼성전자주식회사 | 메모리 소자 및 그의 제조방법 |
JP4791912B2 (ja) * | 2006-08-31 | 2011-10-12 | 株式会社東芝 | 不揮発性半導体記憶装置及び不揮発性記憶システム |
US7457155B2 (en) * | 2006-08-31 | 2008-11-25 | Micron Technology, Inc. | Non-volatile memory device and method having bit-state assignments selected to minimize signal coupling |
JP4886434B2 (ja) * | 2006-09-04 | 2012-02-29 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100771883B1 (ko) * | 2006-09-06 | 2007-11-01 | 삼성전자주식회사 | 멀티-레벨 불휘발성 메모리 장치 및 프로그램 방법 |
KR101615773B1 (ko) * | 2006-09-08 | 2016-04-26 | 샌디스크 테크놀로지스, 인코포레이티드 | 플래시 메모리에서 사이클링 효과들에 대한 의사 랜덤 및 명령 구동 비트 보상 및 이를 위한 방법 |
JP2008077810A (ja) * | 2006-09-25 | 2008-04-03 | Toshiba Corp | 不揮発性半導体記憶装置 |
US7886204B2 (en) * | 2006-09-27 | 2011-02-08 | Sandisk Corporation | Methods of cell population distribution assisted read margining |
TWI353521B (en) | 2006-09-28 | 2011-12-01 | Sandisk Corp | Soft-input soft-output decoder for nonvolatile mem |
TWI360126B (en) * | 2006-09-28 | 2012-03-11 | Sandisk Corp | Nonvolatile memory with adaptive operations and me |
KR101017847B1 (ko) * | 2006-11-03 | 2011-03-04 | 쌘디스크 코포레이션 | 가변 판독 임계값을 갖는 비휘발성 메모리 |
US7941590B2 (en) * | 2006-11-06 | 2011-05-10 | Marvell World Trade Ltd. | Adaptive read and write systems and methods for memory cells |
EP1921614A3 (en) | 2006-11-08 | 2008-06-11 | Daewoo Electronics Corporation | Optical information processing apparatus and optical information processing method |
US7814401B2 (en) * | 2006-12-21 | 2010-10-12 | Ramot At Tel Aviv University Ltd. | Soft decoding of hard and soft bits read from a flash memory |
EP2304733A1 (en) * | 2006-12-29 | 2011-04-06 | Sandisk Corporation | Nand flash memory cell array and method with adaptive memory state partitioning |
US7984360B2 (en) * | 2006-12-31 | 2011-07-19 | Ramot At Tel Aviv University Ltd. | Avoiding errors in a flash memory by using substitution transformations |
KR100816154B1 (ko) | 2007-01-23 | 2008-03-21 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 어드레스 스케쥴링 방법 |
DE102007006603A1 (de) * | 2007-02-06 | 2008-08-07 | Keiper Gmbh & Co.Kg | Verriegelungsvorrichtung für einen Fahrzeugsitz |
US8031526B1 (en) * | 2007-08-23 | 2011-10-04 | Marvell International Ltd. | Write pre-compensation for nonvolatile memory |
KR101425958B1 (ko) * | 2007-09-06 | 2014-08-04 | 삼성전자주식회사 | 멀티-비트 데이터를 저장하는 메모리 시스템 및 그것의읽기 방법 |
US7697325B2 (en) * | 2007-09-24 | 2010-04-13 | Sandisk Corporation | Non-volatile memory cell endurance using data encoding |
US7633798B2 (en) * | 2007-11-21 | 2009-12-15 | Micron Technology, Inc. | M+N bit programming and M+L bit read for M bit memory cells |
US7897953B2 (en) * | 2008-01-16 | 2011-03-01 | Micron Technology, Inc. | Multi-level programmable PCRAM memory |
JP2009272016A (ja) * | 2008-05-09 | 2009-11-19 | Hitachi Ltd | フラッシュメモリシステム |
US8458563B2 (en) * | 2008-06-23 | 2013-06-04 | Ramot At Tel Aviv University Ltd. | Reading a flash memory by joint decoding and cell voltage distribution tracking |
US8526230B2 (en) * | 2008-07-01 | 2013-09-03 | Lsi Corporation | Methods and apparatus for write-side intercell interference mitigation in flash memories |
EP2311041A1 (en) * | 2008-07-22 | 2011-04-20 | LSI Corporation | Methods and apparatus for programming multiple program values per signal level in flash memories |
WO2010039869A1 (en) * | 2008-09-30 | 2010-04-08 | Lsi Corporation | Methods and apparatus for soft data generation for memory devices using reference cells |
US8228728B1 (en) * | 2009-09-14 | 2012-07-24 | Marvell International Ltd. | Programming method for multi-level cell flash for minimizing inter-cell interference |
US8213255B2 (en) * | 2010-02-19 | 2012-07-03 | Sandisk Technologies Inc. | Non-volatile storage with temperature compensation based on neighbor state information |
-
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