ATE522905T1 - Kompensation für die kopplung zwischen benachbarten speicherelementen in einem nichtflüchtigen speicher auf der basis der abtastung eines nachbarn mit kopplung - Google Patents

Kompensation für die kopplung zwischen benachbarten speicherelementen in einem nichtflüchtigen speicher auf der basis der abtastung eines nachbarn mit kopplung

Info

Publication number
ATE522905T1
ATE522905T1 AT07799656T AT07799656T ATE522905T1 AT E522905 T1 ATE522905 T1 AT E522905T1 AT 07799656 T AT07799656 T AT 07799656T AT 07799656 T AT07799656 T AT 07799656T AT E522905 T1 ATE522905 T1 AT E522905T1
Authority
AT
Austria
Prior art keywords
coupling
adjacent
memory cell
compensation
neighbor
Prior art date
Application number
AT07799656T
Other languages
English (en)
Inventor
Yupin Fong
Yan Li
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/459,000 external-priority patent/US7443729B2/en
Priority claimed from US11/458,997 external-priority patent/US7522454B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE522905T1 publication Critical patent/ATE522905T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT07799656T 2006-07-20 2007-07-18 Kompensation für die kopplung zwischen benachbarten speicherelementen in einem nichtflüchtigen speicher auf der basis der abtastung eines nachbarn mit kopplung ATE522905T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/459,000 US7443729B2 (en) 2006-07-20 2006-07-20 System that compensates for coupling based on sensing a neighbor using coupling
US11/458,997 US7522454B2 (en) 2006-07-20 2006-07-20 Compensating for coupling based on sensing a neighbor using coupling
PCT/US2007/073737 WO2008011439A2 (en) 2006-07-20 2007-07-18 Compensating for coupling between adjacent storage elements in a nonvolatile memory, based on sensing a neighbour using coupling

Publications (1)

Publication Number Publication Date
ATE522905T1 true ATE522905T1 (de) 2011-09-15

Family

ID=38957571

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07799656T ATE522905T1 (de) 2006-07-20 2007-07-18 Kompensation für die kopplung zwischen benachbarten speicherelementen in einem nichtflüchtigen speicher auf der basis der abtastung eines nachbarn mit kopplung

Country Status (6)

Country Link
EP (1) EP2047473B1 (de)
JP (1) JP4918136B2 (de)
KR (1) KR101073116B1 (de)
AT (1) ATE522905T1 (de)
TW (1) TWI353606B (de)
WO (1) WO2008011439A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5193701B2 (ja) * 2008-06-30 2013-05-08 株式会社東芝 半導体記憶装置
CN102132348B (zh) * 2008-07-01 2015-06-17 Lsi公司 用于闪存存储器中写入端单元间干扰减轻的方法和装置
JP2011008838A (ja) * 2009-06-23 2011-01-13 Toshiba Corp 不揮発性半導体記憶装置およびその書き込み方法
US9898361B2 (en) 2011-01-04 2018-02-20 Seagate Technology Llc Multi-tier detection and decoding in flash memories
US8537623B2 (en) * 2011-07-07 2013-09-17 Micron Technology, Inc. Devices and methods of programming memory cells
WO2013058960A2 (en) * 2011-10-20 2013-04-25 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8705293B2 (en) 2011-10-20 2014-04-22 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory suitable for quick pass write
US8630120B2 (en) 2011-10-20 2014-01-14 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
JP2013122799A (ja) 2011-12-09 2013-06-20 Toshiba Corp 不揮発性半導体記憶装置
JP2014006940A (ja) * 2012-06-21 2014-01-16 Toshiba Corp 半導体記憶装置
US9293195B2 (en) 2012-06-28 2016-03-22 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory
US20140003176A1 (en) 2012-06-28 2014-01-02 Man Lung Mui Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption
US8971141B2 (en) 2012-06-28 2015-03-03 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory and hybrid lockout
US9672102B2 (en) * 2014-06-25 2017-06-06 Intel Corporation NAND memory devices systems, and methods using pre-read error recovery protocols of upper and lower pages
US9208895B1 (en) 2014-08-14 2015-12-08 Sandisk Technologies Inc. Cell current control through power supply
US9349468B2 (en) 2014-08-25 2016-05-24 SanDisk Technologies, Inc. Operational amplifier methods for charging of sense amplifier internal nodes
CN112259148B (zh) * 2020-10-28 2022-07-26 长江存储科技有限责任公司 存储装置及其读取方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
JP3913704B2 (ja) * 2003-04-22 2007-05-09 株式会社東芝 不揮発性半導体記憶装置及びこれを用いた電子装置
US7064980B2 (en) * 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation

Also Published As

Publication number Publication date
WO2008011439A3 (en) 2008-07-24
EP2047473B1 (de) 2011-08-31
JP4918136B2 (ja) 2012-04-18
TWI353606B (en) 2011-12-01
TW200814066A (en) 2008-03-16
KR101073116B1 (ko) 2011-10-13
JP2009545092A (ja) 2009-12-17
KR20090073082A (ko) 2009-07-02
EP2047473A2 (de) 2009-04-15
WO2008011439A2 (en) 2008-01-24

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