ATE531049T1 - Abwechselndes lesen und schreiben auf zeilenbasis für nichtflüchtigen speicher - Google Patents

Abwechselndes lesen und schreiben auf zeilenbasis für nichtflüchtigen speicher

Info

Publication number
ATE531049T1
ATE531049T1 AT06849087T AT06849087T ATE531049T1 AT E531049 T1 ATE531049 T1 AT E531049T1 AT 06849087 T AT06849087 T AT 06849087T AT 06849087 T AT06849087 T AT 06849087T AT E531049 T1 ATE531049 T1 AT E531049T1
Authority
AT
Austria
Prior art keywords
wln
programmed
word line
word lines
line
Prior art date
Application number
AT06849087T
Other languages
English (en)
Inventor
Daniel Guterman
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/321,259 external-priority patent/US7349260B2/en
Priority claimed from US11/321,346 external-priority patent/US7443726B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE531049T1 publication Critical patent/ATE531049T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits

Landscapes

  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT06849087T 2005-12-29 2006-12-27 Abwechselndes lesen und schreiben auf zeilenbasis für nichtflüchtigen speicher ATE531049T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/321,259 US7349260B2 (en) 2005-12-29 2005-12-29 Alternate row-based reading and writing for non-volatile memory
US11/321,346 US7443726B2 (en) 2005-12-29 2005-12-29 Systems for alternate row-based reading and writing for non-volatile memory
PCT/US2006/049381 WO2007079124A1 (en) 2005-12-29 2006-12-27 Alternate row-based reading and writing for non-volatile memory

Publications (1)

Publication Number Publication Date
ATE531049T1 true ATE531049T1 (de) 2011-11-15

Family

ID=38009518

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06849087T ATE531049T1 (de) 2005-12-29 2006-12-27 Abwechselndes lesen und schreiben auf zeilenbasis für nichtflüchtigen speicher

Country Status (6)

Country Link
EP (1) EP1969604B1 (de)
JP (1) JP4892566B2 (de)
KR (1) KR100989181B1 (de)
AT (1) ATE531049T1 (de)
TW (1) TWI318406B (de)
WO (1) WO2007079124A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101635504B1 (ko) * 2009-06-19 2016-07-04 삼성전자주식회사 3차원 수직 채널 구조를 갖는 불 휘발성 메모리 장치의 프로그램 방법
JP5242603B2 (ja) * 2010-01-13 2013-07-24 株式会社東芝 半導体記憶装置
JP2011192827A (ja) 2010-03-15 2011-09-29 Toshiba Corp Ｎａｎｄ型不揮発性半導体記憶装置
JP5330421B2 (ja) * 2011-02-01 2013-10-30 株式会社東芝 不揮発性半導体記憶装置
JP5542737B2 (ja) * 2011-05-12 2014-07-09 株式会社東芝 不揮発性半導体記憶装置
JP2013118028A (ja) 2011-12-02 2013-06-13 Toshiba Corp 半導体記憶装置
JP6088751B2 (ja) 2012-06-07 2017-03-01 株式会社東芝 半導体メモリ
US9966146B2 (en) 2014-08-13 2018-05-08 Toshiba Memory Corporation Memory system and method of controlling non-volatile memory
JP6433933B2 (ja) * 2016-03-14 2018-12-05 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
US10395723B2 (en) 2017-03-07 2019-08-27 Toshiba Memory Corporation Memory system that differentiates voltages applied to word lines
US10062441B1 (en) * 2017-08-31 2018-08-28 Micron Technology, Inc. Determining data states of memory cells
KR20210110382A (ko) 2019-10-29 2021-09-07 양쯔 메모리 테크놀로지스 씨오., 엘티디. 메모리 디바이스를 프로그래밍하는 방법
CN115295054B (zh) * 2022-09-30 2022-12-13 芯天下技术股份有限公司 一种存储芯片的读取方法、装置、电子设备及存储介质

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6542407B1 (en) 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
JP3913704B2 (ja) * 2003-04-22 2007-05-09 株式会社東芝 不揮発性半導体記憶装置及びこれを用いた電子装置
JP4005000B2 (ja) * 2003-07-04 2007-11-07 株式会社東芝 半導体記憶装置及びデータ書き込み方法。
JP4410188B2 (ja) * 2004-11-12 2010-02-03 株式会社東芝 半導体記憶装置のデータ書き込み方法

Also Published As

Publication number Publication date
TW200741727A (en) 2007-11-01
KR20090007278A (ko) 2009-01-16
JP4892566B2 (ja) 2012-03-07
JP2009522704A (ja) 2009-06-11
EP1969604B1 (de) 2011-10-26
TWI318406B (en) 2009-12-11
EP1969604A1 (de) 2008-09-17
KR100989181B1 (ko) 2010-10-22
WO2007079124A1 (en) 2007-07-12

Similar Documents

Publication Publication Date Title
DE602007012157D1 (de) Leseverfahren für nichtflüchtigen Speicher mit Kompensation der Floating-Gate Kopplung
JP4970834B2 (ja) 奇数状態メモリセルを用いて仮想的ページ記憶を支援する集積回路デバイスとフラッシュメモリアレイ
US7894273B2 (en) Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits
JP5259481B2 (ja) 不揮発性半導体記憶装置
US8081522B2 (en) Page buffer circuit for electrically rewritable non-volatile semiconductor memory device and control method
TW200608404A (en) Operating non-volatile memory without read disturb limitations
US8514633B2 (en) Method for operating semiconductor memory device
WO2004029983A3 (en) Non-volatile memory and method of programming with reduced neighboring field errors
DE60319437D1 (de) Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken
KR20100004791A (ko) 프로그램 디스터브 현상을 개선하는 불휘발성 메모리 장치및 그 프로그램 방법
US9058881B1 (en) Systems and methods for partial page programming of multi level cells
JP2007080307A (ja) 不揮発性半導体記憶装置
KR20110086339A (ko) 불휘발성 반도체 메모리 장치의 프로그램 방법
TWI318406B (en) Systems and method for alternate row-based reading and writing for non-volatile memory
US9330762B2 (en) Semiconductor memory device
JP2007087526A5 (de)
WO2007143398A3 (en) Verify operation for non-volatile storage using different voltages
US7907454B2 (en) Method of verifying programming operation of flash memory device
US7558118B2 (en) NAND flash memory device
TW200710861A (en) Improved read mode for flash memory
JP2013069392A (ja) 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のデータ書き込み方法
WO2007143399A3 (en) Nand flash verify method with different compensated pass voltages
JP4876522B2 (ja) 不揮発性半導体記憶装置
CN102332304B (zh) 非易失性存储器件及其编程方法
KR20110001102A (ko) 불휘발성 메모리 소자의 프로그램 동작 방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties