DE60319437D1 - Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken - Google Patents

Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken

Info

Publication number
DE60319437D1
DE60319437D1 DE60319437T DE60319437T DE60319437D1 DE 60319437 D1 DE60319437 D1 DE 60319437D1 DE 60319437 T DE60319437 T DE 60319437T DE 60319437 T DE60319437 T DE 60319437T DE 60319437 D1 DE60319437 D1 DE 60319437D1
Authority
DE
Germany
Prior art keywords
block
stored
cycle count
user data
erased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60319437T
Other languages
English (en)
Other versions
DE60319437T2 (de
Inventor
Jian Chen
Tomoharu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
SanDisk Corp
Original Assignee
Toshiba Corp
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, SanDisk Corp filed Critical Toshiba Corp
Publication of DE60319437D1 publication Critical patent/DE60319437D1/de
Application granted granted Critical
Publication of DE60319437T2 publication Critical patent/DE60319437T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5646—Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"
DE60319437T 2003-01-28 2003-12-18 Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken Expired - Lifetime DE60319437T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/353,574 US6944063B2 (en) 2003-01-28 2003-01-28 Non-volatile semiconductor memory with large erase blocks storing cycle counts
US353574 2003-01-28
PCT/US2003/040361 WO2004070731A1 (en) 2003-01-28 2003-12-18 Non-volatile semiconductor memory with large erase blocks storing cycle counts

Publications (2)

Publication Number Publication Date
DE60319437D1 true DE60319437D1 (de) 2008-04-10
DE60319437T2 DE60319437T2 (de) 2009-02-19

Family

ID=32736208

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60319437T Expired - Lifetime DE60319437T2 (de) 2003-01-28 2003-12-18 Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken

Country Status (10)

Country Link
US (4) US6944063B2 (de)
EP (2) EP1975942B1 (de)
JP (1) JP4648006B2 (de)
KR (1) KR101089575B1 (de)
CN (1) CN1754230B (de)
AT (1) ATE387715T1 (de)
AU (1) AU2003297327A1 (de)
DE (1) DE60319437T2 (de)
TW (1) TWI323466B (de)
WO (1) WO2004070731A1 (de)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7246268B2 (en) * 2002-01-16 2007-07-17 Sandisk Corporation Method and apparatus for dynamic degradation detection
JP4230753B2 (ja) * 2002-10-30 2009-02-25 株式会社東芝 半導体メモリ
JP3935139B2 (ja) 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US6944063B2 (en) * 2003-01-28 2005-09-13 Sandisk Corporation Non-volatile semiconductor memory with large erase blocks storing cycle counts
US6906961B2 (en) * 2003-06-24 2005-06-14 Micron Technology, Inc. Erase block data splitting
US7139863B1 (en) * 2003-09-26 2006-11-21 Storage Technology Corporation Method and system for improving usable life of memory devices using vector processing
US7171526B2 (en) * 2003-11-07 2007-01-30 Freescale Semiconductor, Inc. Memory controller useable in a data processing system
US7143332B1 (en) * 2003-12-16 2006-11-28 Xilinx, Inc. Methods and structures for providing programmable width and error correction in memory arrays in programmable logic devices
US7259989B2 (en) * 2004-09-03 2007-08-21 Matsushita Electric Industrial Co., Ltd. Non-volatile memory device
JP4660316B2 (ja) * 2004-09-03 2011-03-30 パナソニック株式会社 不揮発性メモリ装置
WO2006030826A1 (ja) 2004-09-17 2006-03-23 Eisai R & D Management Co., Ltd. 医薬組成物
US7275190B2 (en) * 2004-11-08 2007-09-25 Micron Technology, Inc. Memory block quality identification in a memory device
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
KR100669342B1 (ko) * 2004-12-21 2007-01-16 삼성전자주식회사 낸드 플래시 메모리 장치의 프로그램 방법
KR100672121B1 (ko) 2005-01-12 2007-01-19 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 그것의 프로그램/판독 방법
US20060256623A1 (en) * 2005-05-12 2006-11-16 Micron Technology, Inc. Partial string erase scheme in a flash memory device
JP4575288B2 (ja) * 2005-12-05 2010-11-04 株式会社東芝 記憶媒体、記憶媒体再生装置、記憶媒体再生方法および記憶媒体再生プログラム
KR100703806B1 (ko) * 2006-02-16 2007-04-09 삼성전자주식회사 비휘발성 메모리, 이를 위한 데이터 유효성을 판단하는장치 및 방법
US7467253B2 (en) * 2006-04-13 2008-12-16 Sandisk Corporation Cycle count storage systems
US7451264B2 (en) * 2006-04-13 2008-11-11 Sandisk Corporation Cycle count storage methods
US7495966B2 (en) 2006-05-01 2009-02-24 Micron Technology, Inc. Memory voltage cycle adjustment
US7653778B2 (en) 2006-05-08 2010-01-26 Siliconsystems, Inc. Systems and methods for measuring the useful life of solid-state storage devices
JP2008009527A (ja) * 2006-06-27 2008-01-17 Toshiba Corp メモリシステム
KR100736103B1 (ko) * 2006-06-27 2007-07-06 삼성전자주식회사 비휘발성 메모리, 상기 비휘발성 메모리의 데이터 유효성을판단하는 장치 및 방법
JP5002201B2 (ja) * 2006-06-30 2012-08-15 株式会社東芝 メモリシステム
US7529969B1 (en) * 2006-08-24 2009-05-05 Micron Technology, Inc. Memory device internal parameter reliability
US7525838B2 (en) * 2006-08-30 2009-04-28 Samsung Electronics Co., Ltd. Flash memory device and method for programming multi-level cells in the same
US7602650B2 (en) * 2006-08-30 2009-10-13 Samsung Electronics Co., Ltd. Flash memory device and method for programming multi-level cells in the same
KR100805840B1 (ko) * 2006-09-01 2008-02-21 삼성전자주식회사 캐시를 이용한 플래시 메모리 장치 및 그것의 프로그램방법
US20080077840A1 (en) * 2006-09-27 2008-03-27 Mark Shaw Memory system and method for storing and correcting data
KR100908526B1 (ko) * 2006-09-29 2009-07-20 주식회사 하이닉스반도체 플래쉬 메모리 장치 및 그의 소거 방법
US8549236B2 (en) * 2006-12-15 2013-10-01 Siliconsystems, Inc. Storage subsystem with multiple non-volatile memory arrays to protect against data losses
TW200828320A (en) 2006-12-28 2008-07-01 Genesys Logic Inc Method for performing static wear leveling on flash memory
WO2008083161A1 (en) * 2006-12-29 2008-07-10 Sandisk Corporation Page by page ecc variation in a memory device
US7877665B2 (en) * 2006-12-29 2011-01-25 Sandisk Corporation Page by page ECC variation in a memory device
US7870457B2 (en) * 2006-12-29 2011-01-11 Sandisk Corporation Page by page ECC variation in a memory device
US7925151B2 (en) * 2007-01-31 2011-04-12 Kobre Kenneth R Device for redirecting and reflecting light from camera flash and methods for using same
US7596643B2 (en) * 2007-02-07 2009-09-29 Siliconsystems, Inc. Storage subsystem with configurable buffer
US7958301B2 (en) * 2007-04-10 2011-06-07 Marvell World Trade Ltd. Memory controller and method for memory pages with dynamically configurable bits per cell
KR100866626B1 (ko) * 2007-07-02 2008-11-03 삼성전자주식회사 스페어 영역을 갖는 비휘발성 메모리 장치 및 그의 블록소거 방법
KR101397549B1 (ko) * 2007-08-16 2014-05-26 삼성전자주식회사 고속 프로그램이 가능한 불휘발성 반도체 메모리 시스템 및그것의 독출 방법
CN101383186B (zh) * 2007-09-05 2011-09-14 联咏科技股份有限公司 与非门型闪速存储器的编程方法与装置以及读取方法
US20090080258A1 (en) * 2007-09-21 2009-03-26 Walker Andrew J Erase method in thin film nonvolatile memory
US7894263B2 (en) * 2007-09-28 2011-02-22 Sandisk Corporation High voltage generation and control in source-side injection programming of non-volatile memory
US8045373B2 (en) * 2007-10-02 2011-10-25 Cypress Semiconductor Corporation Method and apparatus for programming memory cell array
NZ562200A (en) * 2007-10-04 2008-11-28 Arc Innovations Ltd Method and system for updating a stored data value in a non-volatile memory
WO2009068074A1 (de) * 2007-11-26 2009-06-04 Hyperstone Gmbh VERFAHREN ZUR GLEICHMÄßIGEN NUTZUNG MEHRERER FLASHSPEICHERCHIPS
US7925822B2 (en) * 2008-01-31 2011-04-12 Sandisk Il Ltd Erase count recovery
US8078918B2 (en) * 2008-02-07 2011-12-13 Siliconsystems, Inc. Solid state storage subsystem that maintains and provides access to data reflective of a failure risk
US7962792B2 (en) * 2008-02-11 2011-06-14 Siliconsystems, Inc. Interface for enabling a host computer to retrieve device monitor data from a solid state storage subsystem
JP5214422B2 (ja) * 2008-02-15 2013-06-19 株式会社東芝 データ記憶システム
EP2308058B1 (de) * 2008-07-01 2016-01-27 LSI Corporation Verfahren und vorrichtungen zur leseseitigen minderung von störungen zwischen zellen in flash-speichern
TWI364661B (en) * 2008-09-25 2012-05-21 Silicon Motion Inc Access methods for a flash memory and memory devices
CN102855943B (zh) * 2008-11-28 2017-04-12 群联电子股份有限公司 错误校正控制器及其闪存芯片系统与错误校正方法
US8825940B1 (en) 2008-12-02 2014-09-02 Siliconsystems, Inc. Architecture for optimizing execution of storage access commands
US8291297B2 (en) * 2008-12-18 2012-10-16 Intel Corporation Data error recovery in non-volatile memory
US8094500B2 (en) 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8244960B2 (en) * 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US8700840B2 (en) 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US8040744B2 (en) * 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US9176859B2 (en) * 2009-01-07 2015-11-03 Siliconsystems, Inc. Systems and methods for improving the performance of non-volatile memory operations
KR101038991B1 (ko) * 2009-03-10 2011-06-03 주식회사 하이닉스반도체 메모리 영역의 균등한 사용을 위한 반도체 스토리지 시스템및 그 제어 방법
US10079048B2 (en) * 2009-03-24 2018-09-18 Western Digital Technologies, Inc. Adjusting access of non-volatile semiconductor memory based on access time
KR101586047B1 (ko) * 2009-03-25 2016-01-18 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
TWI404071B (zh) * 2009-06-23 2013-08-01 Phison Electronics Corp 能識別快閃記憶體中錯誤資料的控制電路及儲存系統與方法
JP2010055745A (ja) * 2009-12-07 2010-03-11 Toshiba Corp 記憶媒体
US8799747B2 (en) 2010-06-03 2014-08-05 Seagate Technology Llc Data hardening to compensate for loss of data retention characteristics in a non-volatile memory
CN102543198B (zh) * 2010-12-20 2015-11-25 北京兆易创新科技股份有限公司 一种mlc存储单元的编程方法和装置
KR20120096212A (ko) * 2011-02-22 2012-08-30 삼성전자주식회사 비휘발성 메모리 장치, 메모리 컨트롤러, 및 이들의 동작 방법
KR20120128014A (ko) 2011-05-16 2012-11-26 삼성전자주식회사 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 포함하는 메모리 시스템의 동작 방법
KR20120128978A (ko) * 2011-05-18 2012-11-28 삼성전자주식회사 데이터 저장 장치 및 그것의 데이터 관리 방법
US8902653B2 (en) 2011-08-12 2014-12-02 Micron Technology, Inc. Memory devices and configuration methods for a memory device
KR20130033017A (ko) * 2011-09-26 2013-04-03 에스케이하이닉스 주식회사 불휘발성 메모리 장치의 동작 방법
JP5781047B2 (ja) * 2012-10-17 2015-09-16 株式会社東芝 記憶媒体
US9116796B2 (en) * 2012-11-09 2015-08-25 Sandisk Technologies Inc. Key-value addressed storage drive using NAND flash based content addressable memory
JP2013137792A (ja) * 2013-02-28 2013-07-11 Toshiba Corp 電子機器及びその制御方法
US9075424B2 (en) 2013-03-06 2015-07-07 Sandisk Technologies Inc. Compensation scheme to improve the stability of the operational amplifiers
US8908441B1 (en) * 2013-10-15 2014-12-09 Sandisk Technologies Inc. Double verify method in multi-pass programming to suppress read noise
TWI515737B (zh) * 2013-12-09 2016-01-01 慧榮科技股份有限公司 資料儲存裝置以及其資料抹除方法
US20150169438A1 (en) * 2013-12-18 2015-06-18 Infineon Technologies Ag Method and device for incrementing an erase counter
US9190142B2 (en) 2014-03-12 2015-11-17 Kabushiki Kaisha Toshiba Semiconductor memory device and method of controlling the same
US9230689B2 (en) * 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9811458B2 (en) 2014-03-19 2017-11-07 Htc Corporation Mobile electronic device and method for clearing memory blocks based on processor determination of physical block to erase in response to GUI input from user specified time and directing controller to erase within the specified time
CN104932981B (zh) * 2014-03-20 2018-05-25 宏达国际电子股份有限公司 移动电子装置与清理存储区块的方法
US9607703B2 (en) 2014-09-08 2017-03-28 Kabushiki Kaisha Toshiba Memory system
US9305638B1 (en) * 2014-10-29 2016-04-05 Macronix International Co., Ltd. Operation method for memory device
US9852799B2 (en) 2014-11-19 2017-12-26 Sandisk Technologies Llc Configuration parameter management for non-volatile data storage
US10643700B2 (en) * 2015-10-29 2020-05-05 Micron Technology, Inc. Apparatuses and methods for adjusting write parameters based on a write count
FR3044818B1 (fr) 2015-12-02 2018-03-30 Stmicroelectronics (Rousset) Sas Procede de gestion d'une ligne defectueuse du plan memoire d'une memoire non volatile et dispositif de memoire correspondant
TWI604455B (zh) * 2016-05-13 2017-11-01 Silicon Motion Inc 資料儲存裝置、記憶體控制器及其資料管理方法與資料區塊管理方法
KR20180031853A (ko) * 2016-09-19 2018-03-29 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
CN109935264B (zh) * 2017-12-18 2021-03-26 北京兆易创新科技股份有限公司 一种存储单元的擦除方法、装置及存储器
US10586584B2 (en) * 2018-06-01 2020-03-10 Samsung Electronics Co., Ltd. Semiconductor semiconductor memory devices, memory systems and methods of operating memory devices
US11545221B2 (en) 2018-06-29 2023-01-03 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10978156B2 (en) 2018-06-29 2021-04-13 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
KR102387960B1 (ko) * 2018-07-23 2022-04-19 삼성전자주식회사 컨트롤러 및 그것의 동작 방법
US10891077B2 (en) * 2018-12-26 2021-01-12 Macronix International Co., Ltd. Flash memory device and controlling method thereof
JP2020144554A (ja) * 2019-03-05 2020-09-10 キオクシア株式会社 記憶装置およびデータ読出方法
JP6727365B1 (ja) * 2019-03-27 2020-07-22 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
CN110865772A (zh) * 2019-11-11 2020-03-06 深圳忆联信息系统有限公司 保护系统数据物理块擦除计数值的方法、装置、计算机设备及存储介质
KR20210152673A (ko) * 2020-06-09 2021-12-16 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US568870A (en) * 1896-10-06 Mark m
JPS59111370A (ja) 1982-12-16 1984-06-27 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
EP0617363B1 (de) 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5291440A (en) * 1990-07-30 1994-03-01 Nec Corporation Non-volatile programmable read only memory device having a plurality of memory cells each implemented by a memory transistor and a switching transistor stacked thereon
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5438573A (en) 1991-09-13 1995-08-01 Sundisk Corporation Flash EEPROM array data and header file structure
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5281075A (en) * 1991-11-15 1994-01-25 Tatman Darrell J Apparatus for transporting recreational type vehicles
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5712180A (en) 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
JPH0750558B2 (ja) * 1992-09-22 1995-05-31 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリ
US5485595A (en) 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5443063A (en) * 1993-08-31 1995-08-22 The Johns Hopkins University Cuffed oro-pharyngeal airway
US5887145A (en) 1993-09-01 1999-03-23 Sandisk Corporation Removable mother/daughter peripheral card
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
JP3153730B2 (ja) * 1995-05-16 2001-04-09 株式会社東芝 不揮発性半導体記憶装置
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US5838614A (en) 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5835935A (en) 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
KR100253868B1 (ko) * 1995-11-13 2000-05-01 니시무로 타이죠 불휘발성 반도체기억장치
US5619448A (en) * 1996-03-14 1997-04-08 Myson Technology, Inc. Non-volatile memory device and apparatus for reading a non-volatile memory array
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
JPH09330598A (ja) * 1996-06-10 1997-12-22 Mitsubishi Electric Corp 記憶装置及びその特性劣化状態判定方法
US6335878B1 (en) * 1998-07-28 2002-01-01 Hitachi, Ltd. Non-volatile multi-level semiconductor flash memory device and method of driving same
US5860124A (en) * 1996-09-30 1999-01-12 Intel Corporation Method for performing a continuous over-write of a file in nonvolatile memory
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
US5956473A (en) * 1996-11-25 1999-09-21 Macronix International Co., Ltd. Method and system for managing a flash memory mass storage system
US6028794A (en) 1997-01-17 2000-02-22 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and erasing method of the same
JP3946849B2 (ja) * 1997-01-17 2007-07-18 株式会社東芝 不揮発性半導体記憶装置及びその消去方法
US5928370A (en) 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
JPH10320984A (ja) * 1997-05-15 1998-12-04 Sharp Corp 記憶装置
US5930167A (en) 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
US5822251A (en) * 1997-08-25 1998-10-13 Bit Microsystems, Inc. Expandable flash-memory mass-storage using shared buddy lines and intermediate flash-bus between device-specific buffers and flash-intelligent DMA controllers
JP3788205B2 (ja) 1997-09-30 2006-06-21 ソニー株式会社 記憶装置、データ処理システム、データの書き込み及び読み出し方法並びにデータ処理装置
US5851881A (en) 1997-10-06 1998-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making monos flash memory for multi-level logic
US6034891A (en) * 1997-12-01 2000-03-07 Micron Technology, Inc. Multi-state flash memory defect management
JPH11224491A (ja) 1997-12-03 1999-08-17 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
US6076137A (en) 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6614070B1 (en) * 1998-04-16 2003-09-02 Cypress Semiconductor Corporation Semiconductor non-volatile memory device having a NAND cell structure
JPH11328990A (ja) * 1998-05-15 1999-11-30 Hitachi Ltd 半導体集積回路装置およびそれを用いたメモリカード
US6567302B2 (en) * 1998-12-29 2003-05-20 Micron Technology, Inc. Method and apparatus for programming multi-state cells in a memory device
US6281075B1 (en) 1999-01-27 2001-08-28 Sandisk Corporation Method of controlling of floating gate oxide growth by use of an oxygen barrier
JP2000285688A (ja) * 1999-04-01 2000-10-13 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6103573A (en) 1999-06-30 2000-08-15 Sandisk Corporation Processing techniques for making a dual floating gate EEPROM cell array
US6151248A (en) 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6721843B1 (en) * 2000-07-07 2004-04-13 Lexar Media, Inc. Flash memory architecture implementing simultaneously programmable multiple flash memory banks that are host compatible
US7113432B2 (en) * 2000-09-14 2006-09-26 Sandisk Corporation Compressed event counting technique and application to a flash memory system
US6345001B1 (en) * 2000-09-14 2002-02-05 Sandisk Corporation Compressed event counting technique and application to a flash memory system
US6512263B1 (en) 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
JP2001188713A (ja) * 2000-11-15 2001-07-10 Fujitsu Ltd 記憶装置の管理方法
US6684289B1 (en) * 2000-11-22 2004-01-27 Sandisk Corporation Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
JP2002197878A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 半導体装置及びデータ処理システム
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US6738289B2 (en) 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
JP4282248B2 (ja) 2001-03-30 2009-06-17 株式会社東芝 半導体記憶装置
US7158517B2 (en) * 2001-05-21 2007-01-02 Intel Corporation Method and apparatus for frame-based protocol processing
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6762092B2 (en) 2001-08-08 2004-07-13 Sandisk Corporation Scalable self-aligned dual floating gate memory cell array and methods of forming the array
US6948026B2 (en) * 2001-08-24 2005-09-20 Micron Technology, Inc. Erase block management
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6967872B2 (en) * 2001-12-18 2005-11-22 Sandisk Corporation Method and system for programming and inhibiting multi-level, non-volatile memory cells
US6781877B2 (en) * 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US7181611B2 (en) * 2002-10-28 2007-02-20 Sandisk Corporation Power management block for use in a non-volatile memory system
US6829167B2 (en) * 2002-12-12 2004-12-07 Sandisk Corporation Error recovery for nonvolatile memory
US6944063B2 (en) * 2003-01-28 2005-09-13 Sandisk Corporation Non-volatile semiconductor memory with large erase blocks storing cycle counts

Also Published As

Publication number Publication date
AU2003297327A8 (en) 2004-08-30
KR20050116796A (ko) 2005-12-13
US20050099870A1 (en) 2005-05-12
KR101089575B1 (ko) 2011-12-05
CN1754230A (zh) 2006-03-29
ATE387715T1 (de) 2008-03-15
US7307881B2 (en) 2007-12-11
CN1754230B (zh) 2010-10-06
TWI323466B (en) 2010-04-11
US20040145952A1 (en) 2004-07-29
US6944063B2 (en) 2005-09-13
JP2006513525A (ja) 2006-04-20
EP1975942B1 (de) 2012-06-06
EP1975942A1 (de) 2008-10-01
US20060206770A1 (en) 2006-09-14
DE60319437T2 (de) 2009-02-19
US7085161B2 (en) 2006-08-01
JP4648006B2 (ja) 2011-03-09
WO2004070731A1 (en) 2004-08-19
EP1588379B1 (de) 2008-02-27
AU2003297327A1 (en) 2004-08-30
EP1588379A1 (de) 2005-10-26
US20050102466A1 (en) 2005-05-12
US7394692B2 (en) 2008-07-01
TW200421349A (en) 2004-10-16

Similar Documents

Publication Publication Date Title
DE60319437D1 (de) Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken
US8713380B2 (en) Non-volatile memory and method having efficient on-chip block-copying with controlled error rate
US8909493B2 (en) Compensation for sub-block erase
KR100753156B1 (ko) 플래시 메모리 장치 및 그것의 메모리 셀 어레이
CN104813408B (zh) 跟踪对非易失性存储器的区域的读访问
KR100736103B1 (ko) 비휘발성 메모리, 상기 비휘발성 메모리의 데이터 유효성을판단하는 장치 및 방법
US10338841B2 (en) Block management for data streams
KR101493873B1 (ko) 멀티-레벨 셀 플래시 메모리 장치 및 이의 독출 방법
KR102068519B1 (ko) 저장 장치, 그것의 쓰기 방법 및 읽기 방법
JP2008524706A5 (de)
ATE383648T1 (de) Fehlerbehandlung für beschreibbare referenz- speicherzellen zum verfolgen von einsatzspannungsdriften
US9520184B2 (en) Method for writing in-system programming code into flash memory for better noise margin
ATE427550T1 (de) Integritatssteuerung fur in einem nichtfluchtigen speicher gespeicherte daten
US8964467B1 (en) Systems and methods for partial page programming of multi level cells
JP2004164633A5 (de)
US9384839B2 (en) Write sequence providing write abort protection
TW200709210A (en) Memory controller, non-volatile memory device, non-volatile memory system, and data writing method
US20140281141A1 (en) Binning of Blocks for Dynamic Linking
US20140164679A1 (en) Dynamic Block Linking with Individually Configured Plane Parameters
KR20080075751A (ko) 불휘발성 메모리 장치의 부분 페이지 데이터 기입 방법
TW200710851A (en) Non-volatile memory device, and control method of non-volatile memory device
CN102792381A (zh) 用于多电平存储器单元(mlc)快闪存储器的防数据破坏的保护
US20150234609A1 (en) Method for accessing flash memory and associated controller and memory device
KR101434567B1 (ko) 비휘발성 메모리의 맵핑 테이블 관리 장치 및 방법
JP2010079774A (ja) 半導体記憶システム

Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: CHEN, JIAN, SAN JOSE, CALIF., US

Inventor name: TANAKA, TOMOHARU, MINATO-KU, TOKYO, JP

8364 No opposition during term of opposition