DE602006020272D1 - Kompensationsströme bei leseoperationen in nichtflüchtigen speichern - Google Patents

Kompensationsströme bei leseoperationen in nichtflüchtigen speichern

Info

Publication number
DE602006020272D1
DE602006020272D1 DE602006020272T DE602006020272T DE602006020272D1 DE 602006020272 D1 DE602006020272 D1 DE 602006020272D1 DE 602006020272 T DE602006020272 T DE 602006020272T DE 602006020272 T DE602006020272 T DE 602006020272T DE 602006020272 D1 DE602006020272 D1 DE 602006020272D1
Authority
DE
Germany
Prior art keywords
memory cell
apparent
adjacent
bit line
programmed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006020272T
Other languages
English (en)
Inventor
Raul-Adrian Cernea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602006020272D1 publication Critical patent/DE602006020272D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
  • Semiconductor Memories (AREA)
DE602006020272T 2005-06-20 2006-06-15 Kompensationsströme bei leseoperationen in nichtflüchtigen speichern Active DE602006020272D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/157,033 US7193898B2 (en) 2005-06-20 2005-06-20 Compensation currents in non-volatile memory read operations
PCT/US2006/023541 WO2007001911A1 (en) 2005-06-20 2006-06-15 Compensation currents in non-volatile memory read operations

Publications (1)

Publication Number Publication Date
DE602006020272D1 true DE602006020272D1 (de) 2011-04-07

Family

ID=37086607

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006020272T Active DE602006020272D1 (de) 2005-06-20 2006-06-15 Kompensationsströme bei leseoperationen in nichtflüchtigen speichern

Country Status (9)

Country Link
US (4) US7193898B2 (de)
EP (1) EP1894205B1 (de)
JP (1) JP4892552B2 (de)
KR (1) KR100989447B1 (de)
CN (1) CN101263560B (de)
AT (1) ATE499682T1 (de)
DE (1) DE602006020272D1 (de)
TW (1) TWI309830B (de)
WO (1) WO2007001911A1 (de)

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