JP2011222675A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2011222675A
JP2011222675A JP2010088912A JP2010088912A JP2011222675A JP 2011222675 A JP2011222675 A JP 2011222675A JP 2010088912 A JP2010088912 A JP 2010088912A JP 2010088912 A JP2010088912 A JP 2010088912A JP 2011222675 A JP2011222675 A JP 2011222675A
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JP
Japan
Prior art keywords
solder
semiconductor
submount
electrode
multilayer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010088912A
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English (en)
Japanese (ja)
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JP2011222675A5 (https=
Inventor
Harumi Nishiguchi
晴美 西口
Misao Hironaka
美佐夫 廣中
Kyosuke Kuramoto
恭介 蔵本
Masatsugu Kusunoki
政諭 楠
Yosuke Suzuki
洋介 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010088912A priority Critical patent/JP2011222675A/ja
Priority to US13/012,840 priority patent/US8625646B2/en
Priority to TW100102613A priority patent/TW201140972A/zh
Priority to CN2011100850197A priority patent/CN102214895A/zh
Publication of JP2011222675A publication Critical patent/JP2011222675A/ja
Publication of JP2011222675A5 publication Critical patent/JP2011222675A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H10W72/3528—Intermetallic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2010088912A 2010-04-07 2010-04-07 半導体装置及びその製造方法 Pending JP2011222675A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010088912A JP2011222675A (ja) 2010-04-07 2010-04-07 半導体装置及びその製造方法
US13/012,840 US8625646B2 (en) 2010-04-07 2011-01-25 Semiconductor device
TW100102613A TW201140972A (en) 2010-04-07 2011-01-25 Semiconductor device and method for manufacturing the same
CN2011100850197A CN102214895A (zh) 2010-04-07 2011-04-06 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010088912A JP2011222675A (ja) 2010-04-07 2010-04-07 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2011222675A true JP2011222675A (ja) 2011-11-04
JP2011222675A5 JP2011222675A5 (https=) 2013-04-11

Family

ID=44746072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010088912A Pending JP2011222675A (ja) 2010-04-07 2010-04-07 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US8625646B2 (https=)
JP (1) JP2011222675A (https=)
CN (1) CN102214895A (https=)
TW (1) TW201140972A (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015138870A (ja) * 2014-01-22 2015-07-30 豊田合成株式会社 発光素子、発光装置およびその製造方法
JP2018085442A (ja) * 2016-11-24 2018-05-31 浜松ホトニクス株式会社 半導体レーザ装置
JP6512375B1 (ja) * 2018-04-03 2019-05-15 三菱電機株式会社 半導体装置の製造方法
JP2019220505A (ja) * 2018-06-15 2019-12-26 ウシオオプトセミコンダクター株式会社 半導体発光装置
JPWO2020174949A1 (https=) * 2019-02-26 2020-09-03
JP2021044468A (ja) * 2019-09-13 2021-03-18 シチズンファインデバイス株式会社 サブマウント
WO2023182156A1 (ja) * 2022-03-25 2023-09-28 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法
WO2024034482A1 (ja) * 2022-08-10 2024-02-15 ヌヴォトンテクノロジージャパン株式会社 半導体装置、及び半導体装置の製造方法
US12308607B2 (en) 2019-12-04 2025-05-20 Mitsubishi Electric Corporation Semiconductor laser element, method for manufacturing same, and semiconductor laser device

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DE102011055891B9 (de) * 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
US9088135B1 (en) 2012-06-29 2015-07-21 Soraa Laser Diode, Inc. Narrow sized laser diode
CN104104009B (zh) * 2014-07-08 2017-12-01 北京工业大学 一种p型金属电极制备焊料的半导体激光器
US10038307B2 (en) 2014-12-19 2018-07-31 Alpes Lasers Sa Quantum cascade laser optimized for epitaxial side-down mounting
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
US9843164B2 (en) * 2015-01-27 2017-12-12 TeraDiode, Inc. Solder sealing in high-power laser devices
JP6672721B2 (ja) * 2015-11-09 2020-03-25 三菱電機株式会社 半導体レーザーおよびその製造方法
CN108551077A (zh) * 2018-03-08 2018-09-18 深圳瑞波光电子有限公司 一种半导体激光器件及其制作方法
JP7452233B2 (ja) * 2020-05-01 2024-03-19 株式会社デンソー 半導体装置および電力変換装置
DE112021004159T5 (de) * 2020-08-04 2023-06-22 Panasonic Holdings Corporation Halbleiter-Lichtemissionsvorrichtung
US11610861B2 (en) * 2020-09-14 2023-03-21 Infineon Technologies Austria Ag Diffusion soldering with contaminant protection
CN112332217B (zh) * 2020-11-04 2022-06-03 苏州长光华芯光电技术股份有限公司 一种半导体激光器芯片及制造方法
DE102020132133A1 (de) * 2020-12-03 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils
US20240154384A1 (en) * 2022-11-08 2024-05-09 Globalfoundries U.S. Inc. Cavity-mounted chips with multiple adhesives

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JPH0567847A (ja) * 1991-09-05 1993-03-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH06260723A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp 半導体レーザ装置
JPH08125270A (ja) * 1994-10-28 1996-05-17 Nippondenso Co Ltd 積層型半導体レーザ
JP2000124540A (ja) * 1998-10-16 2000-04-28 Fuji Photo Film Co Ltd 半導体発光素子
JP2003324228A (ja) * 2002-05-01 2003-11-14 Ricoh Co Ltd 半導体発光素子の固着方法
JP2004140141A (ja) * 2002-10-17 2004-05-13 Mitsubishi Electric Corp 半導体レーザ
JP2007027572A (ja) * 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP2007103840A (ja) * 2005-10-07 2007-04-19 Nec Electronics Corp 電子回路装置の製造方法
JP2008053564A (ja) * 2006-08-25 2008-03-06 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
JP2008085272A (ja) * 2006-09-29 2008-04-10 Sanyo Electric Co Ltd サブマウント、および、これを用いた半導体装置

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JPH0637403A (ja) 1992-07-14 1994-02-10 Mitsubishi Electric Corp 半導体レーザ装置
JPH06350202A (ja) 1993-06-10 1994-12-22 Toshiba Corp 半導体発光装置
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JP2004087866A (ja) * 2002-08-28 2004-03-18 Hitachi Ltd 半導体光素子、その実装体および光モジュール
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JP2007103804A (ja) 2005-10-06 2007-04-19 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US20080237814A1 (en) 2007-03-26 2008-10-02 National Semiconductor Corporation Isolated solder pads

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JPH0567847A (ja) * 1991-09-05 1993-03-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH06260723A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp 半導体レーザ装置
JPH08125270A (ja) * 1994-10-28 1996-05-17 Nippondenso Co Ltd 積層型半導体レーザ
JP2000124540A (ja) * 1998-10-16 2000-04-28 Fuji Photo Film Co Ltd 半導体発光素子
JP2003324228A (ja) * 2002-05-01 2003-11-14 Ricoh Co Ltd 半導体発光素子の固着方法
JP2004140141A (ja) * 2002-10-17 2004-05-13 Mitsubishi Electric Corp 半導体レーザ
JP2007027572A (ja) * 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP2007103840A (ja) * 2005-10-07 2007-04-19 Nec Electronics Corp 電子回路装置の製造方法
JP2008053564A (ja) * 2006-08-25 2008-03-06 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
JP2008085272A (ja) * 2006-09-29 2008-04-10 Sanyo Electric Co Ltd サブマウント、および、これを用いた半導体装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015138870A (ja) * 2014-01-22 2015-07-30 豊田合成株式会社 発光素子、発光装置およびその製造方法
JP2018085442A (ja) * 2016-11-24 2018-05-31 浜松ホトニクス株式会社 半導体レーザ装置
US11411369B2 (en) 2018-04-03 2022-08-09 Mitsubishi Electric Corporation Method for manufacturing semiconductor device
JP6512375B1 (ja) * 2018-04-03 2019-05-15 三菱電機株式会社 半導体装置の製造方法
WO2019193643A1 (ja) * 2018-04-03 2019-10-10 三菱電機株式会社 半導体装置の製造方法
JP2019220505A (ja) * 2018-06-15 2019-12-26 ウシオオプトセミコンダクター株式会社 半導体発光装置
JP7135482B2 (ja) 2018-06-15 2022-09-13 ウシオ電機株式会社 半導体発光装置
WO2020174949A1 (ja) * 2019-02-26 2020-09-03 パナソニックセミコンダクターソリューションズ株式会社 半導体レーザ装置及び半導体レーザ素子
JPWO2020174949A1 (https=) * 2019-02-26 2020-09-03
JP7535992B2 (ja) 2019-02-26 2024-08-19 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置及び半導体レーザ素子
US12119611B2 (en) 2019-02-26 2024-10-15 Nuvoton Technology Corporation Japan Semiconductor laser apparatus and semiconductor laser device
JP2021044468A (ja) * 2019-09-13 2021-03-18 シチズンファインデバイス株式会社 サブマウント
JP7324665B2 (ja) 2019-09-13 2023-08-10 シチズンファインデバイス株式会社 サブマウント
US12308607B2 (en) 2019-12-04 2025-05-20 Mitsubishi Electric Corporation Semiconductor laser element, method for manufacturing same, and semiconductor laser device
WO2023182156A1 (ja) * 2022-03-25 2023-09-28 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法
WO2024034482A1 (ja) * 2022-08-10 2024-02-15 ヌヴォトンテクノロジージャパン株式会社 半導体装置、及び半導体装置の製造方法

Also Published As

Publication number Publication date
CN102214895A (zh) 2011-10-12
US8625646B2 (en) 2014-01-07
TW201140972A (en) 2011-11-16
US20110249694A1 (en) 2011-10-13

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