JPWO2020174949A1 - - Google Patents

Info

Publication number
JPWO2020174949A1
JPWO2020174949A1 JP2021501740A JP2021501740A JPWO2020174949A1 JP WO2020174949 A1 JPWO2020174949 A1 JP WO2020174949A1 JP 2021501740 A JP2021501740 A JP 2021501740A JP 2021501740 A JP2021501740 A JP 2021501740A JP WO2020174949 A1 JPWO2020174949 A1 JP WO2020174949A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021501740A
Other languages
Japanese (ja)
Other versions
JP7535992B2 (ja
JPWO2020174949A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020174949A1 publication Critical patent/JPWO2020174949A1/ja
Publication of JPWO2020174949A5 publication Critical patent/JPWO2020174949A5/ja
Application granted granted Critical
Publication of JP7535992B2 publication Critical patent/JP7535992B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2207—GaAsP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2021501740A 2019-02-26 2020-01-23 半導体レーザ装置及び半導体レーザ素子 Active JP7535992B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019033391 2019-02-26
JP2019033391 2019-02-26
PCT/JP2020/002231 WO2020174949A1 (ja) 2019-02-26 2020-01-23 半導体レーザ装置及び半導体レーザ素子

Publications (3)

Publication Number Publication Date
JPWO2020174949A1 true JPWO2020174949A1 (https=) 2020-09-03
JPWO2020174949A5 JPWO2020174949A5 (https=) 2023-10-05
JP7535992B2 JP7535992B2 (ja) 2024-08-19

Family

ID=72238439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021501740A Active JP7535992B2 (ja) 2019-02-26 2020-01-23 半導体レーザ装置及び半導体レーザ素子

Country Status (4)

Country Link
US (1) US12119611B2 (https=)
JP (1) JP7535992B2 (https=)
CN (1) CN113454857B (https=)
WO (1) WO2020174949A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021186695A1 (ja) * 2020-03-19 2021-09-23 三菱電機株式会社 光半導体素子
JPWO2022030127A1 (https=) * 2020-08-04 2022-02-10
DE102020132133A1 (de) * 2020-12-03 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils
CN113140966B (zh) * 2021-03-09 2023-05-09 深圳瑞波光电子有限公司 一种半导体激光器巴条及其制造方法、电子设备
US20230106189A1 (en) * 2021-10-01 2023-04-06 Lawrence Livermore National Security, Llc Patterning of diode/substrate interface to reduce thermal lensing
JP2024018423A (ja) * 2022-07-29 2024-02-08 浜松ホトニクス株式会社 半導体レーザ装置
JP2024018311A (ja) * 2022-07-29 2024-02-08 浜松ホトニクス株式会社 半導体レーザ装置
DE102022121857A1 (de) * 2022-08-30 2024-02-29 Ams-Osram International Gmbh Kantenemittierende halbleiterlaserdiode; verfahren zur herstellung eines halbleiterlaserbauelements und halbleiterlaserbauelement
WO2025182613A1 (ja) * 2024-02-26 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、及び半導体レーザ装置の製造方法
WO2025182611A1 (ja) * 2024-02-26 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、及び半導体レーザ装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202323A (ja) * 1993-12-27 1995-08-04 Sony Corp マルチビーム半導体レーザ
JPH0846279A (ja) * 1994-07-26 1996-02-16 Mitsubishi Electric Corp アレイ型半導体レーザ装置
JPH09167878A (ja) * 1995-12-14 1997-06-24 Nec Corp 半導体レーザアレイ
JP2010272554A (ja) * 2009-05-19 2010-12-02 Sharp Corp 光学部品及びその製造方法
JP2011222675A (ja) * 2010-04-07 2011-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2016012707A (ja) * 2014-06-30 2016-01-21 晶元光電股▲ふん▼有限公司 光電部品及びその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS585889A (ja) 1981-07-02 1983-01-13 Nec Corp 単語検索装置
JPH11220204A (ja) 1998-01-30 1999-08-10 Mitsubishi Electric Corp アレイ型半導体レーザ装置およびその製造方法
JP3348024B2 (ja) * 1998-08-17 2002-11-20 松下電器産業株式会社 半導体レーザ装置
JP2000357844A (ja) * 1999-06-17 2000-12-26 Nec Corp 光半導体素子およびその製造方法
TWI303909B (en) 2002-11-25 2008-12-01 Nichia Corp Ridge waveguide semiconductor laser diode
JP4337520B2 (ja) 2002-11-25 2009-09-30 日亜化学工業株式会社 リッジ導波路型半導体レーザ
TWI220798B (en) * 2003-03-07 2004-09-01 Hitachi Cable Light-emitting diode array
US7285801B2 (en) * 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
JP2006278578A (ja) * 2005-03-28 2006-10-12 Sanyo Electric Co Ltd 集積型半導体レーザ素子およびその製造方法
JP2008544540A (ja) * 2005-06-22 2008-12-04 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
JP3117281U (ja) * 2005-09-30 2006-01-05 鼎元光電科技股▲ふん▼有限公司 効率の高いマトリックス発光ダイオード素子
JP5151317B2 (ja) * 2007-08-28 2013-02-27 富士ゼロックス株式会社 面発光型半導体レーザ装置およびその製造方法
KR20100076083A (ko) * 2008-12-17 2010-07-06 서울반도체 주식회사 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법
JP2012054474A (ja) * 2010-09-02 2012-03-15 Opnext Japan Inc 半導体レーザ装置
JP6231389B2 (ja) * 2014-01-17 2017-11-15 日本オクラロ株式会社 半導体光素子及び光モジュール
CN103855149A (zh) * 2014-02-20 2014-06-11 中国科学院半导体研究所 倒装高压发光二极管及其制作方法
DE102015105438A1 (de) 2015-04-09 2016-10-13 M2K-Laser Gmbh Monolithische Diodenlaseranordnung
US11152766B2 (en) * 2018-05-14 2021-10-19 Trumpf Photonics, Inc. Low current, high power laser diode bar

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202323A (ja) * 1993-12-27 1995-08-04 Sony Corp マルチビーム半導体レーザ
JPH0846279A (ja) * 1994-07-26 1996-02-16 Mitsubishi Electric Corp アレイ型半導体レーザ装置
JPH09167878A (ja) * 1995-12-14 1997-06-24 Nec Corp 半導体レーザアレイ
JP2010272554A (ja) * 2009-05-19 2010-12-02 Sharp Corp 光学部品及びその製造方法
JP2011222675A (ja) * 2010-04-07 2011-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2016012707A (ja) * 2014-06-30 2016-01-21 晶元光電股▲ふん▼有限公司 光電部品及びその製造方法

Also Published As

Publication number Publication date
CN113454857A (zh) 2021-09-28
CN113454857B (zh) 2024-11-01
JP7535992B2 (ja) 2024-08-19
US20210384701A1 (en) 2021-12-09
WO2020174949A1 (ja) 2020-09-03
US12119611B2 (en) 2024-10-15

Similar Documents

Publication Publication Date Title
BR112021017339A2 (https=)
BR112021018450A2 (https=)
BR112021017637A2 (https=)
BR112021017892A2 (https=)
BR112021017782A2 (https=)
JPWO2020174949A1 (https=)
BR112021017939A2 (https=)
BR112021017738A2 (https=)
BR112021017728A2 (https=)
AU2020104490A5 (https=)
BR112021018452A2 (https=)
BR112021017703A2 (https=)
BR112021018102A2 (https=)
BR112019016138A2 (https=)
BR112021017732A2 (https=)
BR112021017234A2 (https=)
BR112021017355A2 (https=)
BR112021018168A2 (https=)
BR112021018093A2 (https=)
BR112021017173A2 (https=)
BR112021017083A2 (https=)
BR112021018250A2 (https=)
BR112021018584A2 (https=)
BR112021017310A2 (https=)
BR112021018484A2 (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230927

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240426

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240723

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240806

R150 Certificate of patent or registration of utility model

Ref document number: 7535992

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150