JPWO2022030127A1 - - Google Patents

Info

Publication number
JPWO2022030127A1
JPWO2022030127A1 JP2022541148A JP2022541148A JPWO2022030127A1 JP WO2022030127 A1 JPWO2022030127 A1 JP WO2022030127A1 JP 2022541148 A JP2022541148 A JP 2022541148A JP 2022541148 A JP2022541148 A JP 2022541148A JP WO2022030127 A1 JPWO2022030127 A1 JP WO2022030127A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022541148A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022030127A1 publication Critical patent/JPWO2022030127A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
JP2022541148A 2020-08-04 2021-06-23 Pending JPWO2022030127A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020132661 2020-08-04
PCT/JP2021/023768 WO2022030127A1 (ja) 2020-08-04 2021-06-23 半導体発光装置

Publications (1)

Publication Number Publication Date
JPWO2022030127A1 true JPWO2022030127A1 (https=) 2022-02-10

Family

ID=80117972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022541148A Pending JPWO2022030127A1 (https=) 2020-08-04 2021-06-23

Country Status (4)

Country Link
US (1) US20230155346A1 (https=)
JP (1) JPWO2022030127A1 (https=)
DE (1) DE112021004159T5 (https=)
WO (1) WO2022030127A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023143314A (ja) * 2022-03-25 2023-10-06 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220204A (ja) * 1998-01-30 1999-08-10 Mitsubishi Electric Corp アレイ型半導体レーザ装置およびその製造方法
JP2003037323A (ja) * 2001-07-25 2003-02-07 Sony Corp 半導体レーザ・アレイ装置用サブマウント、半導体レーザ・アレイ装置、及びその作製方法
JP2003318475A (ja) * 2002-04-24 2003-11-07 Kyocera Corp 光半導体素子のマウント構造
US20070286252A1 (en) * 2006-06-08 2007-12-13 Samsung Electronics Co., Ltd. Submount of a multi-beam laser diode module
US20090104727A1 (en) * 2007-09-20 2009-04-23 Bookham Technology Plc High power semiconductor laser diodes
JP2011233717A (ja) * 2010-04-27 2011-11-17 Sharp Corp 半導体レーザ装置
JP2015135911A (ja) * 2014-01-17 2015-07-27 日本オクラロ株式会社 半導体光素子及び光モジュール
JP2015173218A (ja) * 2014-03-12 2015-10-01 三菱電機株式会社 半導体レーザ光源
WO2018203466A1 (ja) * 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
JP2019129217A (ja) * 2018-01-24 2019-08-01 パナソニック株式会社 半導体レーザ素子及び半導体レーザ装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5627851A (en) * 1995-02-10 1997-05-06 Ricoh Company, Ltd. Semiconductor light emitting device
JP2000133877A (ja) * 1998-10-27 2000-05-12 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2003198057A (ja) * 2001-12-27 2003-07-11 Sony Corp 半導体レーザ素子及びその製造方法
JP2004087866A (ja) * 2002-08-28 2004-03-18 Hitachi Ltd 半導体光素子、その実装体および光モジュール
JP2005223070A (ja) * 2004-02-04 2005-08-18 Toshiba Corp 半導体発光素子及び半導体発光装置
JP2006303299A (ja) * 2005-04-22 2006-11-02 Sharp Corp 半導体レーザ
JP2009283512A (ja) * 2008-05-19 2009-12-03 Panasonic Corp 窒化物半導体レーザ
JP4966283B2 (ja) * 2008-10-14 2012-07-04 シャープ株式会社 半導体レーザ装置およびその製造方法
JP2011222675A (ja) * 2010-04-07 2011-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
WO2016129618A1 (ja) * 2015-02-12 2016-08-18 古河電気工業株式会社 半導体レーザ素子およびレーザ光照射装置
DE102015106712A1 (de) * 2015-04-30 2016-11-03 Osram Opto Semiconductors Gmbh Anordnung mit einem Substrat und einem Halbleiterlaser
JP6700019B2 (ja) * 2015-10-20 2020-05-27 スタンレー電気株式会社 半導体発光素子
EP3836318B1 (en) * 2018-08-09 2025-10-08 Nuvoton Technology Corporation Japan Semiconductor light emission device and method for manufacturing semiconductor light emission device
WO2020174949A1 (ja) * 2019-02-26 2020-09-03 パナソニックセミコンダクターソリューションズ株式会社 半導体レーザ装置及び半導体レーザ素子
JP7356287B2 (ja) * 2019-08-06 2023-10-04 ソニーセミコンダクタソリューションズ株式会社 半導体レーザ駆動装置、および、電子機器
US20220263288A1 (en) * 2019-08-26 2022-08-18 Panasonic Corporation Semiconductor laser device
WO2021111536A1 (ja) * 2019-12-04 2021-06-10 三菱電機株式会社 半導体レーザ素子およびその製造方法、半導体レーザ装置
CN115989620B (zh) * 2020-09-04 2025-02-25 三菱电机株式会社 半导体激光器以及半导体激光装置
WO2023153476A1 (ja) * 2022-02-10 2023-08-17 京セラ株式会社 発光デバイスの製造方法および製造装置並びにレーザ素子基板
CN116960725A (zh) * 2022-04-14 2023-10-27 潍坊华光光电子有限公司 一种基于金锡焊料封装的热沉结构及共晶方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220204A (ja) * 1998-01-30 1999-08-10 Mitsubishi Electric Corp アレイ型半導体レーザ装置およびその製造方法
JP2003037323A (ja) * 2001-07-25 2003-02-07 Sony Corp 半導体レーザ・アレイ装置用サブマウント、半導体レーザ・アレイ装置、及びその作製方法
JP2003318475A (ja) * 2002-04-24 2003-11-07 Kyocera Corp 光半導体素子のマウント構造
US20070286252A1 (en) * 2006-06-08 2007-12-13 Samsung Electronics Co., Ltd. Submount of a multi-beam laser diode module
US20090104727A1 (en) * 2007-09-20 2009-04-23 Bookham Technology Plc High power semiconductor laser diodes
JP2011233717A (ja) * 2010-04-27 2011-11-17 Sharp Corp 半導体レーザ装置
JP2015135911A (ja) * 2014-01-17 2015-07-27 日本オクラロ株式会社 半導体光素子及び光モジュール
JP2015173218A (ja) * 2014-03-12 2015-10-01 三菱電機株式会社 半導体レーザ光源
WO2018203466A1 (ja) * 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
JP2019129217A (ja) * 2018-01-24 2019-08-01 パナソニック株式会社 半導体レーザ素子及び半導体レーザ装置

Also Published As

Publication number Publication date
US20230155346A1 (en) 2023-05-18
DE112021004159T5 (de) 2023-06-22
WO2022030127A1 (ja) 2022-02-10

Similar Documents

Publication Publication Date Title
CL2025004088A1 (es) Anticuerpos y fragmentos de unión al antígeno anti-glicoproteína de la espícula de sars-cov-2.
BR102021018859A2 (https=)
CN306227354S (https=)
CN306232019S (https=)
CN305536812S (https=)
CN305536638S (https=)
CN305534571S (https=)
CN305533390S (https=)
CN305530076S (https=)
CN305529880S (https=)
CN305529205S (https=)
CN305528305S (https=)
CN305528197S (https=)
CN306409382S (https=)
CN306407914S (https=)
CN306407183S (https=)
CN306406605S (https=)
CN306403946S (https=)
CN306402879S (https=)
CN306399863S (https=)
CN306399244S (https=)
CN306397987S (https=)
CN306395924S (https=)
CN306395886S (https=)
CN306372429S (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250204

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20250624