DE112021004159T5 - Halbleiter-Lichtemissionsvorrichtung - Google Patents

Halbleiter-Lichtemissionsvorrichtung Download PDF

Info

Publication number
DE112021004159T5
DE112021004159T5 DE112021004159.2T DE112021004159T DE112021004159T5 DE 112021004159 T5 DE112021004159 T5 DE 112021004159T5 DE 112021004159 T DE112021004159 T DE 112021004159T DE 112021004159 T5 DE112021004159 T5 DE 112021004159T5
Authority
DE
Germany
Prior art keywords
light emitting
semiconductor light
semiconductor
layer
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112021004159.2T
Other languages
German (de)
English (en)
Inventor
Shinichiro NOZAKI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Panasonic Holdings Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Holdings Corp filed Critical Panasonic Holdings Corp
Publication of DE112021004159T5 publication Critical patent/DE112021004159T5/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
DE112021004159.2T 2020-08-04 2021-06-23 Halbleiter-Lichtemissionsvorrichtung Withdrawn DE112021004159T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-132661 2020-08-04
JP2020132661 2020-08-04
PCT/JP2021/023768 WO2022030127A1 (ja) 2020-08-04 2021-06-23 半導体発光装置

Publications (1)

Publication Number Publication Date
DE112021004159T5 true DE112021004159T5 (de) 2023-06-22

Family

ID=80117972

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021004159.2T Withdrawn DE112021004159T5 (de) 2020-08-04 2021-06-23 Halbleiter-Lichtemissionsvorrichtung

Country Status (4)

Country Link
US (1) US20230155346A1 (https=)
JP (1) JPWO2022030127A1 (https=)
DE (1) DE112021004159T5 (https=)
WO (1) WO2022030127A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023143314A (ja) * 2022-03-25 2023-10-06 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5627851A (en) * 1995-02-10 1997-05-06 Ricoh Company, Ltd. Semiconductor light emitting device
JPH11220204A (ja) * 1998-01-30 1999-08-10 Mitsubishi Electric Corp アレイ型半導体レーザ装置およびその製造方法
JP2000133877A (ja) * 1998-10-27 2000-05-12 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2003037323A (ja) * 2001-07-25 2003-02-07 Sony Corp 半導体レーザ・アレイ装置用サブマウント、半導体レーザ・アレイ装置、及びその作製方法
JP2003198057A (ja) * 2001-12-27 2003-07-11 Sony Corp 半導体レーザ素子及びその製造方法
JP2003318475A (ja) * 2002-04-24 2003-11-07 Kyocera Corp 光半導体素子のマウント構造
JP2004087866A (ja) * 2002-08-28 2004-03-18 Hitachi Ltd 半導体光素子、その実装体および光モジュール
JP2005223070A (ja) * 2004-02-04 2005-08-18 Toshiba Corp 半導体発光素子及び半導体発光装置
JP2006303299A (ja) * 2005-04-22 2006-11-02 Sharp Corp 半導体レーザ
KR100754407B1 (ko) * 2006-06-08 2007-08-31 삼성전자주식회사 서브마운트 및 이를 구비하는 멀티 빔 레이저 다이오드모듈
WO2009037555A2 (en) * 2007-09-20 2009-03-26 Bookham Technology Plc High power semiconductor laser diodes
JP2009283512A (ja) * 2008-05-19 2009-12-03 Panasonic Corp 窒化物半導体レーザ
JP4966283B2 (ja) * 2008-10-14 2012-07-04 シャープ株式会社 半導体レーザ装置およびその製造方法
JP2011222675A (ja) * 2010-04-07 2011-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP5487002B2 (ja) * 2010-04-27 2014-05-07 シャープ株式会社 半導体レーザ装置
JP6231389B2 (ja) * 2014-01-17 2017-11-15 日本オクラロ株式会社 半導体光素子及び光モジュール
JP6305127B2 (ja) * 2014-03-12 2018-04-04 三菱電機株式会社 半導体レーザ光源
WO2016129618A1 (ja) * 2015-02-12 2016-08-18 古河電気工業株式会社 半導体レーザ素子およびレーザ光照射装置
DE102015106712A1 (de) * 2015-04-30 2016-11-03 Osram Opto Semiconductors Gmbh Anordnung mit einem Substrat und einem Halbleiterlaser
JP6700019B2 (ja) * 2015-10-20 2020-05-27 スタンレー電気株式会社 半導体発光素子
CN118970619B (zh) * 2017-05-01 2025-08-22 新唐科技日本株式会社 氮化物系发光装置
JP2019129217A (ja) * 2018-01-24 2019-08-01 パナソニック株式会社 半導体レーザ素子及び半導体レーザ装置
EP3836318B1 (en) * 2018-08-09 2025-10-08 Nuvoton Technology Corporation Japan Semiconductor light emission device and method for manufacturing semiconductor light emission device
WO2020174949A1 (ja) * 2019-02-26 2020-09-03 パナソニックセミコンダクターソリューションズ株式会社 半導体レーザ装置及び半導体レーザ素子
JP7356287B2 (ja) * 2019-08-06 2023-10-04 ソニーセミコンダクタソリューションズ株式会社 半導体レーザ駆動装置、および、電子機器
US20220263288A1 (en) * 2019-08-26 2022-08-18 Panasonic Corporation Semiconductor laser device
WO2021111536A1 (ja) * 2019-12-04 2021-06-10 三菱電機株式会社 半導体レーザ素子およびその製造方法、半導体レーザ装置
CN115989620B (zh) * 2020-09-04 2025-02-25 三菱电机株式会社 半导体激光器以及半导体激光装置
WO2023153476A1 (ja) * 2022-02-10 2023-08-17 京セラ株式会社 発光デバイスの製造方法および製造装置並びにレーザ素子基板
CN116960725A (zh) * 2022-04-14 2023-10-27 潍坊华光光电子有限公司 一种基于金锡焊料封装的热沉结构及共晶方法

Also Published As

Publication number Publication date
US20230155346A1 (en) 2023-05-18
JPWO2022030127A1 (https=) 2022-02-10
WO2022030127A1 (ja) 2022-02-10

Similar Documents

Publication Publication Date Title
DE102011055891B9 (de) Halbleiterlaserdiode
DE69900953T2 (de) Halbleiterlaser aus einer Nitridverbindung
EP2564478B1 (de) Laserlichtquelle
DE102017122330B4 (de) Halbleiterlaserdiode und Halbleiterbauelement
DE2165006C3 (de) Halbleiterlaser
EP1307927B1 (de) Strahlungsemittierender halbleiterchip und lumineszenzdiode
DE102013215052B4 (de) Halbleiterlaservorrichtung
DE69212283T2 (de) Laserdioden-Array
EP1201013B1 (de) Mehrfach-halbleiterlaserstruktur mit schmaler wellenlängenverteilung
WO2019042827A1 (de) Kantenemittierender laserbarren
DE112020002289T5 (de) Halbleiterlaservorrichtung und externe Resonanzlaservorrichtung
DE102012103160A1 (de) Laserdiodenvorrichtung
DE3502326A1 (de) Licht emittierender chip und damit arbeitende optische kommunikationsvorrichtung
WO2022223370A1 (de) Optoelektronisches halbleiterbauelement
DE112021004159T5 (de) Halbleiter-Lichtemissionsvorrichtung
DE102020126388A1 (de) Oberflächenemittierender halbleiterlaser
DE102017201875B4 (de) Halbleiterlaseranordnung
WO2018219667A1 (de) Halbleiterlaserdiode mit zwei resonatoren
DE3527269C2 (https=)
DE69603002T2 (de) Laserdiode mit verengter Strahlungswinkel-Charakteristik
EP4260417B1 (de) Laserdiode mit integrierter thermischer blende
DE102022119108A1 (de) Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements
DE112020001500T5 (de) Halbleiterlaserelement
WO2019121407A1 (de) Halbleiterlaser, betriebsverfahren für einen halbleiterlaser und methode zur bestimmung des optimalen füllfaktors eines halbleiterlasers
DE112021002600B4 (de) Verfahren zum herstellen einer halbleiterlaseranordnung und halbleiterlaseranordnung

Legal Events

Date Code Title Description
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee