CN102214895A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN102214895A
CN102214895A CN2011100850197A CN201110085019A CN102214895A CN 102214895 A CN102214895 A CN 102214895A CN 2011100850197 A CN2011100850197 A CN 2011100850197A CN 201110085019 A CN201110085019 A CN 201110085019A CN 102214895 A CN102214895 A CN 102214895A
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CN
China
Prior art keywords
semiconductor
electrode
scolder
secondary fixture
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011100850197A
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English (en)
Chinese (zh)
Inventor
西口晴美
广中美佐夫
藏本恭介
楠政谕
铃木洋介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN102214895A publication Critical patent/CN102214895A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H10W72/3528—Intermetallic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN2011100850197A 2010-04-07 2011-04-06 半导体装置及其制造方法 Pending CN102214895A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-088912 2010-04-07
JP2010088912A JP2011222675A (ja) 2010-04-07 2010-04-07 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
CN102214895A true CN102214895A (zh) 2011-10-12

Family

ID=44746072

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100850197A Pending CN102214895A (zh) 2010-04-07 2011-04-06 半导体装置及其制造方法

Country Status (4)

Country Link
US (1) US8625646B2 (https=)
JP (1) JP2011222675A (https=)
CN (1) CN102214895A (https=)
TW (1) TW201140972A (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103975490A (zh) * 2011-11-30 2014-08-06 欧司朗光电半导体有限公司 半导体激光二极管
CN104104009A (zh) * 2014-07-08 2014-10-15 北京工业大学 一种p型金属电极制备焊料的半导体激光器
CN106684706A (zh) * 2015-11-09 2017-05-17 三菱电机株式会社 半导体激光器及其制造方法
WO2019169661A1 (zh) * 2018-03-08 2019-09-12 深圳瑞波光电子有限公司 一种半导体激光器件及其制作方法
CN112332217A (zh) * 2020-11-04 2021-02-05 苏州长光华芯光电技术有限公司 一种半导体激光器芯片及制造方法
CN113454857A (zh) * 2019-02-26 2021-09-28 新唐科技日本株式会社 半导体激光装置以及半导体激光元件
CN115516624A (zh) * 2020-05-01 2022-12-23 株式会社电装 半导体装置及电力变换装置
US20230155346A1 (en) * 2020-08-04 2023-05-18 Panasonic Holdings Corporation Semiconductor light emitting device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9088135B1 (en) 2012-06-29 2015-07-21 Soraa Laser Diode, Inc. Narrow sized laser diode
JP6107680B2 (ja) * 2014-01-22 2017-04-05 豊田合成株式会社 発光装置およびその製造方法
US10038307B2 (en) 2014-12-19 2018-07-31 Alpes Lasers Sa Quantum cascade laser optimized for epitaxial side-down mounting
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
US9843164B2 (en) * 2015-01-27 2017-12-12 TeraDiode, Inc. Solder sealing in high-power laser devices
JP6928440B2 (ja) * 2016-11-24 2021-09-01 浜松ホトニクス株式会社 半導体レーザ装置
WO2019193643A1 (ja) * 2018-04-03 2019-10-10 三菱電機株式会社 半導体装置の製造方法
JP7135482B2 (ja) * 2018-06-15 2022-09-13 ウシオ電機株式会社 半導体発光装置
JP7324665B2 (ja) * 2019-09-13 2023-08-10 シチズンファインデバイス株式会社 サブマウント
JP6818946B1 (ja) 2019-12-04 2021-01-27 三菱電機株式会社 半導体レーザ素子およびその製造方法、半導体レーザ装置
US11610861B2 (en) * 2020-09-14 2023-03-21 Infineon Technologies Austria Ag Diffusion soldering with contaminant protection
DE102020132133A1 (de) * 2020-12-03 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils
JP2023143314A (ja) * 2022-03-25 2023-10-06 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法
WO2024034482A1 (ja) * 2022-08-10 2024-02-15 ヌヴォトンテクノロジージャパン株式会社 半導体装置、及び半導体装置の製造方法
US20240154384A1 (en) * 2022-11-08 2024-05-09 Globalfoundries U.S. Inc. Cavity-mounted chips with multiple adhesives

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH0567847A (ja) * 1991-09-05 1993-03-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
CN1574319A (zh) * 2002-08-07 2005-02-02 三洋电机株式会社 电路装置及其制造方法
CN101276798A (zh) * 2007-03-26 2008-10-01 国家半导体公司 隔离焊料垫

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JPS60239086A (ja) 1985-04-25 1985-11-27 Hitachi Ltd 半導体レーザ装置
JPH02253690A (ja) 1989-03-27 1990-10-12 Mitsubishi Electric Corp 半導体装置の製造方法
JPH03217065A (ja) 1990-01-23 1991-09-24 Toshiba Corp レーザダイオード装置
JPH04315486A (ja) 1991-04-15 1992-11-06 Hitachi Ltd 光電子装置およびその製造方法
JPH05110203A (ja) 1991-10-15 1993-04-30 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
JPH0637403A (ja) 1992-07-14 1994-02-10 Mitsubishi Electric Corp 半導体レーザ装置
JPH06260723A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp 半導体レーザ装置
JPH06350202A (ja) 1993-06-10 1994-12-22 Toshiba Corp 半導体発光装置
JPH0738208A (ja) 1993-07-22 1995-02-07 Nec Corp 半導体レーザ装置
JPH08125270A (ja) * 1994-10-28 1996-05-17 Nippondenso Co Ltd 積層型半導体レーザ
JPH11284098A (ja) 1998-03-31 1999-10-15 Sharp Corp 半導体レーザ装置
JP2000004064A (ja) 1998-06-16 2000-01-07 Rohm Co Ltd 半導体レーザ装置およびその製造方法
JP2000124540A (ja) * 1998-10-16 2000-04-28 Fuji Photo Film Co Ltd 半導体発光素子
JP3779218B2 (ja) 2002-02-18 2006-05-24 住友電気工業株式会社 サブマウントおよび半導体装置
JP4088867B2 (ja) * 2002-05-01 2008-05-21 株式会社リコー 半導体発光素子の固着方法
JP2004087866A (ja) * 2002-08-28 2004-03-18 Hitachi Ltd 半導体光素子、その実装体および光モジュール
JP2004140141A (ja) * 2002-10-17 2004-05-13 Mitsubishi Electric Corp 半導体レーザ
US7045827B2 (en) * 2004-06-24 2006-05-16 Gallup Kendra J Lids for wafer-scale optoelectronic packages
US7564887B2 (en) * 2004-06-30 2009-07-21 Finisar Corporation Long wavelength vertical cavity surface emitting lasers
JP2007027572A (ja) * 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP2007103804A (ja) 2005-10-06 2007-04-19 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2007103840A (ja) * 2005-10-07 2007-04-19 Nec Electronics Corp 電子回路装置の製造方法
JP2008053564A (ja) * 2006-08-25 2008-03-06 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
JP2008085272A (ja) * 2006-09-29 2008-04-10 Sanyo Electric Co Ltd サブマウント、および、これを用いた半導体装置

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Publication number Priority date Publication date Assignee Title
JPH0567847A (ja) * 1991-09-05 1993-03-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
CN1574319A (zh) * 2002-08-07 2005-02-02 三洋电机株式会社 电路装置及其制造方法
CN101276798A (zh) * 2007-03-26 2008-10-01 国家半导体公司 隔离焊料垫

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103975490A (zh) * 2011-11-30 2014-08-06 欧司朗光电半导体有限公司 半导体激光二极管
US9722394B2 (en) 2011-11-30 2017-08-01 Osram Opto Semiconductors Gmbh Semiconductor laser diode
CN104104009A (zh) * 2014-07-08 2014-10-15 北京工业大学 一种p型金属电极制备焊料的半导体激光器
CN106684706A (zh) * 2015-11-09 2017-05-17 三菱电机株式会社 半导体激光器及其制造方法
CN106684706B (zh) * 2015-11-09 2019-06-28 三菱电机株式会社 半导体激光器及其制造方法
WO2019169661A1 (zh) * 2018-03-08 2019-09-12 深圳瑞波光电子有限公司 一种半导体激光器件及其制作方法
CN113454857B (zh) * 2019-02-26 2024-11-01 新唐科技日本株式会社 半导体激光装置以及半导体激光元件
CN113454857A (zh) * 2019-02-26 2021-09-28 新唐科技日本株式会社 半导体激光装置以及半导体激光元件
CN115516624A (zh) * 2020-05-01 2022-12-23 株式会社电装 半导体装置及电力变换装置
CN115516624B (zh) * 2020-05-01 2025-09-02 株式会社电装 半导体装置及电力变换装置
US20230155346A1 (en) * 2020-08-04 2023-05-18 Panasonic Holdings Corporation Semiconductor light emitting device
CN112332217B (zh) * 2020-11-04 2022-06-03 苏州长光华芯光电技术股份有限公司 一种半导体激光器芯片及制造方法
CN112332217A (zh) * 2020-11-04 2021-02-05 苏州长光华芯光电技术有限公司 一种半导体激光器芯片及制造方法

Also Published As

Publication number Publication date
JP2011222675A (ja) 2011-11-04
US8625646B2 (en) 2014-01-07
TW201140972A (en) 2011-11-16
US20110249694A1 (en) 2011-10-13

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Application publication date: 20111012