JP2011210904A5 - - Google Patents

Download PDF

Info

Publication number
JP2011210904A5
JP2011210904A5 JP2010076373A JP2010076373A JP2011210904A5 JP 2011210904 A5 JP2011210904 A5 JP 2011210904A5 JP 2010076373 A JP2010076373 A JP 2010076373A JP 2010076373 A JP2010076373 A JP 2010076373A JP 2011210904 A5 JP2011210904 A5 JP 2011210904A5
Authority
JP
Japan
Prior art keywords
drain regions
regions
source regions
gate electrode
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010076373A
Other languages
English (en)
Japanese (ja)
Other versions
JP5529607B2 (ja
JP2011210904A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2010076373A external-priority patent/JP5529607B2/ja
Priority to JP2010076373A priority Critical patent/JP5529607B2/ja
Priority to TW100109558A priority patent/TWI525785B/zh
Priority to US13/070,170 priority patent/US8610214B2/en
Priority to KR1020110027622A priority patent/KR101761922B1/ko
Priority to CN201110077707.9A priority patent/CN102208410B/zh
Publication of JP2011210904A publication Critical patent/JP2011210904A/ja
Publication of JP2011210904A5 publication Critical patent/JP2011210904A5/ja
Publication of JP5529607B2 publication Critical patent/JP5529607B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010076373A 2010-03-29 2010-03-29 半導体装置 Expired - Fee Related JP5529607B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010076373A JP5529607B2 (ja) 2010-03-29 2010-03-29 半導体装置
TW100109558A TWI525785B (zh) 2010-03-29 2011-03-21 Semiconductor device
US13/070,170 US8610214B2 (en) 2010-03-29 2011-03-23 ESD protection device having a geometric salicide pattern
KR1020110027622A KR101761922B1 (ko) 2010-03-29 2011-03-28 반도체 장치
CN201110077707.9A CN102208410B (zh) 2010-03-29 2011-03-29 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010076373A JP5529607B2 (ja) 2010-03-29 2010-03-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2011210904A JP2011210904A (ja) 2011-10-20
JP2011210904A5 true JP2011210904A5 (enExample) 2013-03-07
JP5529607B2 JP5529607B2 (ja) 2014-06-25

Family

ID=44655394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010076373A Expired - Fee Related JP5529607B2 (ja) 2010-03-29 2010-03-29 半導体装置

Country Status (5)

Country Link
US (1) US8610214B2 (enExample)
JP (1) JP5529607B2 (enExample)
KR (1) KR101761922B1 (enExample)
CN (1) CN102208410B (enExample)
TW (1) TWI525785B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008715A (ja) * 2011-06-22 2013-01-10 Semiconductor Components Industries Llc 半導体装置
JP6013876B2 (ja) 2012-10-30 2016-10-25 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP6033054B2 (ja) 2012-11-22 2016-11-30 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP5923046B2 (ja) * 2013-01-11 2016-05-24 株式会社東芝 半導体装置の製造方法
CN103400841B (zh) * 2013-07-12 2016-04-13 西安电子科技大学 基于SiGe BiCMOS的宽带射频芯片静电保护电路
CN104952866B (zh) * 2014-03-27 2019-07-12 恩智浦美国有限公司 集成电路电气保护装置
TWI575756B (zh) * 2015-01-13 2017-03-21 群創光電股份有限公司 顯示面板
CN107210228B (zh) * 2015-02-04 2020-09-29 三菱电机株式会社 半导体装置
JP6640049B2 (ja) 2016-08-02 2020-02-05 日立オートモティブシステムズ株式会社 電子装置
CN108735727B (zh) * 2017-04-14 2021-01-01 中芯国际集成电路制造(上海)有限公司 晶体管版图结构、晶体管及制作方法
US11430749B2 (en) * 2018-10-31 2022-08-30 Infineon Technologies Ag ESD protection in an electronic device
CN110060997B (zh) * 2019-04-15 2020-04-17 长江存储科技有限责任公司 一种静电放电保护结构及其制作方法
CA3114695A1 (en) * 2020-04-08 2021-10-08 National Research Council Of Canada Distributed inductance integrated field effect transistor structure
KR20220001812A (ko) * 2020-06-30 2022-01-06 삼성전기주식회사 Rf 스위치
CN116805623A (zh) * 2022-03-18 2023-09-26 联华电子股份有限公司 静电放电保护装置
CN115692406B (zh) * 2022-06-10 2025-09-02 珠海鸿芯科技有限公司 一种单双排pad和esd搭配使用的版图布局结构及方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745829A (ja) * 1993-07-28 1995-02-14 Ricoh Co Ltd 半導体集積回路装置
KR0164496B1 (ko) * 1995-12-02 1998-12-15 김광호 정전기보호소자
JP3472911B2 (ja) * 1997-10-31 2003-12-02 セイコーエプソン株式会社 半導体装置
JP2002280459A (ja) * 2001-03-21 2002-09-27 Kawasaki Microelectronics Kk 集積回路の製造方法
JP4790166B2 (ja) * 2001-07-05 2011-10-12 Ｏｋｉセミコンダクタ株式会社 保護トランジスタ
US6611025B2 (en) * 2001-09-05 2003-08-26 Winbond Electronics Corp. Apparatus and method for improved power bus ESD protection
JP4854934B2 (ja) * 2004-06-14 2012-01-18 ルネサスエレクトロニクス株式会社 静電気放電保護素子
JP2007116049A (ja) * 2005-10-24 2007-05-10 Toshiba Corp 半導体装置
JP4728833B2 (ja) * 2006-02-15 2011-07-20 Ｏｋｉセミコンダクタ株式会社 半導体装置
JP2008098276A (ja) * 2006-10-10 2008-04-24 Sony Corp 半導体装置及びその製造方法
JP5165967B2 (ja) * 2007-08-22 2013-03-21 セイコーインスツル株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP2011210904A5 (enExample)
JP2010219504A5 (enExample)
JP2012068627A5 (ja) 半導体装置の作製方法
WO2018056694A3 (ko) 로직 반도체 소자
JP2012074692A5 (ja) 電界効果トランジスタ
JP2011054949A5 (ja) 半導体装置
JP2009033145A5 (enExample)
JP2012015500A5 (enExample)
JP2009088134A5 (ja) 半導体装置
CN103972274A (zh) 半导体装置
JP2010041042A5 (enExample)
JP2012080092A5 (enExample)
JP2012238850A5 (enExample)
JP2009188223A5 (enExample)
JP2012099801A5 (ja) 光電変換装置
JP2012253327A5 (enExample)
JP2015188082A5 (ja) 半導体装置
JP2015012048A5 (enExample)
JP2011142190A5 (enExample)
JP2012015499A5 (enExample)
JP2013008959A5 (ja) 半導体装置
JP2014110326A5 (enExample)
GB2507011A (en) Low-profile local interconnect and method of making the same
JP2011210901A5 (enExample)
JP2009147001A5 (enExample)