JP2009188223A5 - - Google Patents

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Publication number
JP2009188223A5
JP2009188223A5 JP2008027246A JP2008027246A JP2009188223A5 JP 2009188223 A5 JP2009188223 A5 JP 2009188223A5 JP 2008027246 A JP2008027246 A JP 2008027246A JP 2008027246 A JP2008027246 A JP 2008027246A JP 2009188223 A5 JP2009188223 A5 JP 2009188223A5
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JP
Japan
Prior art keywords
region
channel
semiconductor chip
source
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008027246A
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English (en)
Japanese (ja)
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JP2009188223A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008027246A priority Critical patent/JP2009188223A/ja
Priority claimed from JP2008027246A external-priority patent/JP2009188223A/ja
Priority to US12/363,989 priority patent/US20090200613A1/en
Priority to KR1020090009268A priority patent/KR20090086329A/ko
Priority to TW098103877A priority patent/TW201001676A/zh
Priority to CNA2009100066366A priority patent/CN101504946A/zh
Publication of JP2009188223A publication Critical patent/JP2009188223A/ja
Publication of JP2009188223A5 publication Critical patent/JP2009188223A5/ja
Withdrawn legal-status Critical Current

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JP2008027246A 2008-02-07 2008-02-07 半導体装置 Withdrawn JP2009188223A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008027246A JP2009188223A (ja) 2008-02-07 2008-02-07 半導体装置
US12/363,989 US20090200613A1 (en) 2008-02-07 2009-02-02 Semiconductor device
KR1020090009268A KR20090086329A (ko) 2008-02-07 2009-02-05 반도체 장치
TW098103877A TW201001676A (en) 2008-02-07 2009-02-06 Semiconductor device
CNA2009100066366A CN101504946A (zh) 2008-02-07 2009-02-06 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008027246A JP2009188223A (ja) 2008-02-07 2008-02-07 半導体装置

Publications (2)

Publication Number Publication Date
JP2009188223A JP2009188223A (ja) 2009-08-20
JP2009188223A5 true JP2009188223A5 (enExample) 2011-02-03

Family

ID=40938172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008027246A Withdrawn JP2009188223A (ja) 2008-02-07 2008-02-07 半導体装置

Country Status (5)

Country Link
US (1) US20090200613A1 (enExample)
JP (1) JP2009188223A (enExample)
KR (1) KR20090086329A (enExample)
CN (1) CN101504946A (enExample)
TW (1) TW201001676A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064854A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
FR2993983A1 (fr) * 2012-07-30 2014-01-31 St Microelectronics Rousset Procede de compensation d'effets de contraintes mecaniques dans un microcircuit
KR101972077B1 (ko) 2012-09-28 2019-08-19 삼성디스플레이 주식회사 유기 발광 표시 장치
US9293730B2 (en) 2013-10-15 2016-03-22 Samsung Display Co., Ltd. Flexible organic light emitting diode display and manufacturing method thereof
CN206774547U (zh) * 2017-05-11 2017-12-19 合肥鑫晟光电科技有限公司 薄膜晶体管结构、电路结构、显示基板及显示装置
JP7092692B2 (ja) * 2019-01-22 2022-06-28 エイブリック株式会社 応力補償制御回路及び半導体センサ装置
US10903369B2 (en) 2019-02-27 2021-01-26 International Business Machines Corporation Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions
US10957799B2 (en) 2019-02-27 2021-03-23 International Business Machines Corporation Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions
JP7297479B2 (ja) * 2019-03-15 2023-06-26 エイブリック株式会社 半導体装置
JP2020177393A (ja) * 2019-04-17 2020-10-29 エイブリック株式会社 定電流回路及び半導体装置
US20240145565A1 (en) * 2022-10-27 2024-05-02 Advanced Micro Devices, Inc. Apparatuses and systems for offset cross field-effect transistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53675B2 (enExample) * 1972-03-16 1978-01-11
EP0466463A1 (en) * 1990-07-10 1992-01-15 Kawasaki Steel Corporation Basic cell and arrangement structure thereof
EP0845815A3 (en) * 1996-11-28 1999-03-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device, method of designing the same and semiconductor integrated circuit device
US6601224B1 (en) * 1999-08-30 2003-07-29 Intel Corporation Layout to minimize gate orientation related skew effects
JP2001177357A (ja) * 1999-12-17 2001-06-29 Matsushita Electric Works Ltd 差動アンプ
US6794718B2 (en) * 2002-12-19 2004-09-21 International Business Machines Corporation High mobility crystalline planes in double-gate CMOS technology
JP2005197622A (ja) * 2004-01-09 2005-07-21 Sharp Corp 半導体集積回路設計装置、半導体集積回路設計方法、半導体集積回路の電流値相対ばらつき特性評価方法、半導体集積回路の抵抗値相対ばらつき特性評価方法、半導体集積回路の製造方法、制御プログラムおよび可読記録媒体
JP4984316B2 (ja) * 2005-08-18 2012-07-25 セイコーエプソン株式会社 半導体装置、電気光学装置及び電子機器
JP4602908B2 (ja) * 2006-01-10 2010-12-22 シャープ株式会社 半導体装置
JP5157289B2 (ja) * 2007-07-11 2013-03-06 ミツミ電機株式会社 Ｍｏｓトランジスタ及びこれを用いたｍｏｓトランジスタ回路

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