JP2009188223A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2009188223A
JP2009188223A JP2008027246A JP2008027246A JP2009188223A JP 2009188223 A JP2009188223 A JP 2009188223A JP 2008027246 A JP2008027246 A JP 2008027246A JP 2008027246 A JP2008027246 A JP 2008027246A JP 2009188223 A JP2009188223 A JP 2009188223A
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JP
Japan
Prior art keywords
region
channel
channel region
conductivity type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008027246A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009188223A5 (enExample
Inventor
Jun Osanai
潤 小山内
Keisuke Kamimura
啓介 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2008027246A priority Critical patent/JP2009188223A/ja
Priority to US12/363,989 priority patent/US20090200613A1/en
Priority to KR1020090009268A priority patent/KR20090086329A/ko
Priority to TW098103877A priority patent/TW201001676A/zh
Priority to CNA2009100066366A priority patent/CN101504946A/zh
Publication of JP2009188223A publication Critical patent/JP2009188223A/ja
Publication of JP2009188223A5 publication Critical patent/JP2009188223A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008027246A 2008-02-07 2008-02-07 半導体装置 Withdrawn JP2009188223A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008027246A JP2009188223A (ja) 2008-02-07 2008-02-07 半導体装置
US12/363,989 US20090200613A1 (en) 2008-02-07 2009-02-02 Semiconductor device
KR1020090009268A KR20090086329A (ko) 2008-02-07 2009-02-05 반도체 장치
TW098103877A TW201001676A (en) 2008-02-07 2009-02-06 Semiconductor device
CNA2009100066366A CN101504946A (zh) 2008-02-07 2009-02-06 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008027246A JP2009188223A (ja) 2008-02-07 2008-02-07 半導体装置

Publications (2)

Publication Number Publication Date
JP2009188223A true JP2009188223A (ja) 2009-08-20
JP2009188223A5 JP2009188223A5 (enExample) 2011-02-03

Family

ID=40938172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008027246A Withdrawn JP2009188223A (ja) 2008-02-07 2008-02-07 半導体装置

Country Status (5)

Country Link
US (1) US20090200613A1 (enExample)
JP (1) JP2009188223A (enExample)
KR (1) KR20090086329A (enExample)
CN (1) CN101504946A (enExample)
TW (1) TW201001676A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064854A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
JP2020177393A (ja) * 2019-04-17 2020-10-29 エイブリック株式会社 定電流回路及び半導体装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2993983A1 (fr) * 2012-07-30 2014-01-31 St Microelectronics Rousset Procede de compensation d'effets de contraintes mecaniques dans un microcircuit
KR101972077B1 (ko) 2012-09-28 2019-08-19 삼성디스플레이 주식회사 유기 발광 표시 장치
US9293730B2 (en) 2013-10-15 2016-03-22 Samsung Display Co., Ltd. Flexible organic light emitting diode display and manufacturing method thereof
CN206774547U (zh) * 2017-05-11 2017-12-19 合肥鑫晟光电科技有限公司 薄膜晶体管结构、电路结构、显示基板及显示装置
JP7092692B2 (ja) * 2019-01-22 2022-06-28 エイブリック株式会社 応力補償制御回路及び半導体センサ装置
US10903369B2 (en) 2019-02-27 2021-01-26 International Business Machines Corporation Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions
US10957799B2 (en) 2019-02-27 2021-03-23 International Business Machines Corporation Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions
JP7297479B2 (ja) * 2019-03-15 2023-06-26 エイブリック株式会社 半導体装置
US20240145565A1 (en) * 2022-10-27 2024-05-02 Advanced Micro Devices, Inc. Apparatuses and systems for offset cross field-effect transistors

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4895194A (enExample) * 1972-03-16 1973-12-06
JP2001177357A (ja) * 1999-12-17 2001-06-29 Matsushita Electric Works Ltd 差動アンプ
JP2005197622A (ja) * 2004-01-09 2005-07-21 Sharp Corp 半導体集積回路設計装置、半導体集積回路設計方法、半導体集積回路の電流値相対ばらつき特性評価方法、半導体集積回路の抵抗値相対ばらつき特性評価方法、半導体集積回路の製造方法、制御プログラムおよび可読記録媒体
JP2007053265A (ja) * 2005-08-18 2007-03-01 Seiko Epson Corp 半導体装置、電気光学装置及び電子機器
JP2007184481A (ja) * 2006-01-10 2007-07-19 Sharp Corp 半導体装置
JP2009021360A (ja) * 2007-07-11 2009-01-29 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いたｍｏｓトランジスタ回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0466463A1 (en) * 1990-07-10 1992-01-15 Kawasaki Steel Corporation Basic cell and arrangement structure thereof
EP0845815A3 (en) * 1996-11-28 1999-03-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device, method of designing the same and semiconductor integrated circuit device
US6601224B1 (en) * 1999-08-30 2003-07-29 Intel Corporation Layout to minimize gate orientation related skew effects
US6794718B2 (en) * 2002-12-19 2004-09-21 International Business Machines Corporation High mobility crystalline planes in double-gate CMOS technology

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4895194A (enExample) * 1972-03-16 1973-12-06
JP2001177357A (ja) * 1999-12-17 2001-06-29 Matsushita Electric Works Ltd 差動アンプ
JP2005197622A (ja) * 2004-01-09 2005-07-21 Sharp Corp 半導体集積回路設計装置、半導体集積回路設計方法、半導体集積回路の電流値相対ばらつき特性評価方法、半導体集積回路の抵抗値相対ばらつき特性評価方法、半導体集積回路の製造方法、制御プログラムおよび可読記録媒体
JP2007053265A (ja) * 2005-08-18 2007-03-01 Seiko Epson Corp 半導体装置、電気光学装置及び電子機器
JP2007184481A (ja) * 2006-01-10 2007-07-19 Sharp Corp 半導体装置
JP2009021360A (ja) * 2007-07-11 2009-01-29 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いたｍｏｓトランジスタ回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064854A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
JP2020177393A (ja) * 2019-04-17 2020-10-29 エイブリック株式会社 定電流回路及び半導体装置

Also Published As

Publication number Publication date
TW201001676A (en) 2010-01-01
CN101504946A (zh) 2009-08-12
US20090200613A1 (en) 2009-08-13
KR20090086329A (ko) 2009-08-12

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