KR101761922B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101761922B1
KR101761922B1 KR1020110027622A KR20110027622A KR101761922B1 KR 101761922 B1 KR101761922 B1 KR 101761922B1 KR 1020110027622 A KR1020110027622 A KR 1020110027622A KR 20110027622 A KR20110027622 A KR 20110027622A KR 101761922 B1 KR101761922 B1 KR 101761922B1
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KR
South Korea
Prior art keywords
gate electrode
distance
drain regions
drain region
salicide
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110027622A
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English (en)
Korean (ko)
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KR20110109947A (ko
Inventor
스케히로 야마모토
Original Assignee
에스아이아이 세미컨덕터 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 에스아이아이 세미컨덕터 가부시키가이샤 filed Critical 에스아이아이 세미컨덕터 가부시키가이샤
Publication of KR20110109947A publication Critical patent/KR20110109947A/ko
Application granted granted Critical
Publication of KR101761922B1 publication Critical patent/KR101761922B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/813—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements specially adapted to provide an electrical current path other than the field-effect induced current path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020110027622A 2010-03-29 2011-03-28 반도체 장치 Expired - Fee Related KR101761922B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010076373A JP5529607B2 (ja) 2010-03-29 2010-03-29 半導体装置
JPJP-P-2010-076373 2010-03-29

Publications (2)

Publication Number Publication Date
KR20110109947A KR20110109947A (ko) 2011-10-06
KR101761922B1 true KR101761922B1 (ko) 2017-07-26

Family

ID=44655394

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110027622A Expired - Fee Related KR101761922B1 (ko) 2010-03-29 2011-03-28 반도체 장치

Country Status (5)

Country Link
US (1) US8610214B2 (enExample)
JP (1) JP5529607B2 (enExample)
KR (1) KR101761922B1 (enExample)
CN (1) CN102208410B (enExample)
TW (1) TWI525785B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008715A (ja) * 2011-06-22 2013-01-10 Semiconductor Components Industries Llc 半導体装置
JP6013876B2 (ja) 2012-10-30 2016-10-25 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP6033054B2 (ja) 2012-11-22 2016-11-30 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP5923046B2 (ja) * 2013-01-11 2016-05-24 株式会社東芝 半導体装置の製造方法
CN103400841B (zh) * 2013-07-12 2016-04-13 西安电子科技大学 基于SiGe BiCMOS的宽带射频芯片静电保护电路
CN104952866B (zh) * 2014-03-27 2019-07-12 恩智浦美国有限公司 集成电路电气保护装置
TWI575756B (zh) * 2015-01-13 2017-03-21 群創光電股份有限公司 顯示面板
WO2016125323A1 (ja) * 2015-02-04 2016-08-11 三菱電機株式会社 半導体装置
JP6640049B2 (ja) * 2016-08-02 2020-02-05 日立オートモティブシステムズ株式会社 電子装置
CN108735727B (zh) * 2017-04-14 2021-01-01 中芯国际集成电路制造(上海)有限公司 晶体管版图结构、晶体管及制作方法
US11430749B2 (en) * 2018-10-31 2022-08-30 Infineon Technologies Ag ESD protection in an electronic device
CN110060997B (zh) * 2019-04-15 2020-04-17 长江存储科技有限责任公司 一种静电放电保护结构及其制作方法
CA3114695A1 (en) * 2020-04-08 2021-10-08 National Research Council Of Canada Distributed inductance integrated field effect transistor structure
KR20220001812A (ko) * 2020-06-30 2022-01-06 삼성전기주식회사 Rf 스위치
CN116805623A (zh) * 2022-03-18 2023-09-26 联华电子股份有限公司 静电放电保护装置
CN115692406B (zh) * 2022-06-10 2025-09-02 珠海鸿芯科技有限公司 一种单双排pad和esd搭配使用的版图布局结构及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020142540A1 (en) * 2001-03-21 2002-10-03 Kawasaki Microelectronics, Inc. Method of manufacturing semiconductor integrated circuit having capacitor and silicided and non-silicided transistors
JP2003023159A (ja) * 2001-07-05 2003-01-24 Oki Electric Ind Co Ltd 保護トランジスタ
JP2007116049A (ja) * 2005-10-24 2007-05-10 Toshiba Corp 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745829A (ja) * 1993-07-28 1995-02-14 Ricoh Co Ltd 半導体集積回路装置
KR0164496B1 (ko) * 1995-12-02 1998-12-15 김광호 정전기보호소자
JP3472911B2 (ja) * 1997-10-31 2003-12-02 セイコーエプソン株式会社 半導体装置
US6611025B2 (en) * 2001-09-05 2003-08-26 Winbond Electronics Corp. Apparatus and method for improved power bus ESD protection
JP4854934B2 (ja) * 2004-06-14 2012-01-18 ルネサスエレクトロニクス株式会社 静電気放電保護素子
JP4728833B2 (ja) * 2006-02-15 2011-07-20 Ｏｋｉセミコンダクタ株式会社 半導体装置
JP2008098276A (ja) * 2006-10-10 2008-04-24 Sony Corp 半導体装置及びその製造方法
JP5165967B2 (ja) * 2007-08-22 2013-03-21 セイコーインスツル株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020142540A1 (en) * 2001-03-21 2002-10-03 Kawasaki Microelectronics, Inc. Method of manufacturing semiconductor integrated circuit having capacitor and silicided and non-silicided transistors
JP2003023159A (ja) * 2001-07-05 2003-01-24 Oki Electric Ind Co Ltd 保護トランジスタ
JP2007116049A (ja) * 2005-10-24 2007-05-10 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
TW201203494A (en) 2012-01-16
JP5529607B2 (ja) 2014-06-25
KR20110109947A (ko) 2011-10-06
US8610214B2 (en) 2013-12-17
CN102208410B (zh) 2015-05-20
JP2011210904A (ja) 2011-10-20
US20110233677A1 (en) 2011-09-29
TWI525785B (zh) 2016-03-11
CN102208410A (zh) 2011-10-05

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