JP2010502815A - 残留触媒成分の除去方法 - Google Patents
残留触媒成分の除去方法 Download PDFInfo
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- JP2010502815A JP2010502815A JP2009527365A JP2009527365A JP2010502815A JP 2010502815 A JP2010502815 A JP 2010502815A JP 2009527365 A JP2009527365 A JP 2009527365A JP 2009527365 A JP2009527365 A JP 2009527365A JP 2010502815 A JP2010502815 A JP 2010502815A
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- metal
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F6/00—Post-polymerisation treatments
- C08F6/06—Treatment of polymer solutions
- C08F6/08—Removal of catalyst residues
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F110/00—Homopolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond
- C08F110/14—Monomers containing five or more carbon atoms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D15/00—Separating processes involving the treatment of liquids with solid sorbents; Apparatus therefor
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Abstract
Description
1.技術分野
本発明は一般に、粗製有機生成物、例えば粗製ポリアルファオレフィン重合生成物から残留触媒成分を実質的に除去する方法に関する。
一般に、有機合成において、触媒は生成する粗製有機生成物に非常にしばしば可溶性であり、単純な濾過によって除去することはできない。一例として、アルファオレフィン重合後、ポリアルファオレフィン(PAO)重合生成物は溶解した触媒を含有しており、これは水素添加工程に先立ち除去する必要がある。したがって、PAO仕上げ処理において、水素添加触媒および水素処理に多額の費用を消費する。この費用の大部分は未仕上げ処理生成物中に残留する高い残留重合触媒レベルの直接的結果である。この理由は、水素添加触媒に対してハロゲンが有毒であることから、重合触媒からの残留金属およびハロゲンは粗製PAO生成物の水素添加期間中に必要な水素添加触媒の装填量を多くすることにある。
本発明の態様に従い、1種または2種以上のハロゲン化アルキル、ハロゲン化アルコキシ、ハロゲン化金属、オキシハロゲン化金属、アルキル金属、アルコキシ金属、ホウ素化合物および配位金属化合物(ここで、金属は第III族、第IV族、第V族、第VI族および/または第VIII族金属である)を含む残留触媒を含む粗製有機生成物からこのような残留触媒のレベルを減少させる方法が提供され、この方法は粗製有機生成物を吸着システムにおいて固形吸着剤と接触させることを含む。
本発明は、1種または2種以上のハロゲン化アルキル、ハロゲン化アルコキシ、ハロゲン化金属、オキシハロゲン化金属、アルキル金属、アルコキシ金属、ホウ素化合物および配位金属化合物(ここで、金属は第III族、第IV族、第V族、第VI族および/または第VIII族金属である)を含む残留触媒を含む粗製有機生成物、すなわちこのような触媒を使用する有機合成から生成される有機生成物、例えばポリアルファオレフィン重合生成物、アルキル化芳香族化合物、アルキル化アミン化合物などからこのような残留触媒のレベルを減少させる方法に関する。一般に、一つの態様において、粗製有機生成物は単独で、またはいずれかの組合わせで使用されるハロゲン化アルキル、ハロゲン化アルコキシ、ハロゲン化金属、オキシハロゲン化金属、アルキル金属、アルコキシ金属、ホウ素化合物および配位金属化合物(ここで、金属は第III族、第IV族、第V族、第VI族および/または第VIII族金属である)を含むオレフィン重合触媒の存在下に少なくとも1種のアルファオレフィンを適当な重合反応条件において重合または共重合させることによって得られるポリアルファオレフィン重合生成物であることができる。
(Cp1R1 m)R3(CP2R2 p)MXq (I)
(Cp1R1 m)(CP2R2 p)MXq (II)
式中、リガンド(Cp1R1 m)のCp1およびリガンド(CP2R2 p)のCp2は同一であるかまたは相違しており、シクロペンタジエニル含有環であり、R1およびR2は同一であるかまたは相違しており、水素または約20個までの炭素原子を含有するヒドロカルビル、ハロカルビル、ヘテロカルビル、ヒドロカルビル−置換有機メタロイドまたはハロカルビル−置換有機メタロイド基であり、mは0〜5であり、pは0〜5であり、およびそこに結合しているシクロペンタジエニル環の隣接する炭素原子上の2個のR1および/またはR2置換基は一緒に結合してシクロペンタジエニル環に環縮合していることができ、この縮合環は炭素原子4個〜約20個を含有しており、R3はCp1およびCp2を架橋している架橋基であることができ、Mは周期律表の第IV族、第V族または第VI族からの金属、例えばチタニウム、ジルコニウム、ハフニウム、バナジウム、ニオビウム、タンタリウム、クロミウム、モリブデニウムまたはタングステン、好ましくはジルコニウム、ハフニウムまたはチタニウムであり、各Xは非環状シクロペンタンジエニルリガンドであって、独立して、ハロゲンまたは約20個までの炭素原子を含有するヒドロカルビル、オキシヒドロカルビル、ハロカルビル、ヒドロカルビル−置換有機メタロイド、オキシカルビル−置換有機メタロイドまたはハロカルビル−置換有機メタロイド基であり、およびqはMから2を引いた数値に等しい。架橋基R3の例は下記式で表される構造を有する架橋基であることができる:
式中、R4およびR5はそれぞれ独立して、約20個までの炭素原子および0個〜3個のヘテロ原子、例えば酸素、イオウ、第三窒素、ホウ素またはリンを含有するヒドロカルビルまたはシクロヒドロカルビル基であるか、またはこれらの基を含有しており、およびM1は、例えばケイ素またはゲルマニウムである。
ジメチルシリル(2−メチルインデニル)(2−メチルインデニル)ジルコニウムジクロライド、ジフェニルメチレン(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、ジフェニルメチレン(インデニル)(フルオレニル)ジルコニウムジクロライド、ジフェニルメチレン(シクロペンタジエニル)(4,5,6,7−テトラヒドロ−インデニル)ジルコニウムジクロライド、ジフェニルメチレン(シクロペンタジエニル)(2−メチルインデニル)ジルコニウムジクロライド、ジフェニルメチレン(2,4−ジメチルシクロ−ペンタジエニル)(3’,5’−ジメチルシクロペンタジエニル)ジルコニウムジクロライド、ジフェニルメチレン(2−メチル−4−tert−ブチルシクロ−ペンタジエニル)(3’−tert−ブチル−5’−メチルシクロペンタジエニル)ジルコニウムジクロライド、ジキシリルメチレン(2,3,5,−トリメチルシクロペンタジエニル)(2’,4’,5’−トリメチルシクロペンタジエニル)ジルコニウムジクロライド、ジキシリルメチレン(2,4−ジメチルシクロペンタジエニル)(3’,5’−ジメチルシクロペンタジエニル)ジルコニウムジクロライド、ジキシリルメチレン(2−メチル−4−tert−ブチルシクロペンタジエニル)(3’−tert−ブチル−5−メチルシクロペンタジエニル)ジルコニウムジクロライド、ジキシリルメチレン(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、ジ−o−トリルメチレン(シクロペンタジエニル)(3,4−ジメチル−シクロペンタジエニル)ジルコニウムジクロライド、ジ−o−トリルメチレン(シクロペンタジエニル)(3,4−ジメチル−シクロペンタジエニル)ジルコニウムジクロライド、ジ−o−トリルメチレン(シクロペンタジエニル)(3,4−ジメチルシクロペンタジエニル)ジルコニウムジクロライド、ジ−o−トリルメチレン(シクロペンタジエニル)(インデニル)ジルコニウムジクロライド、ジベンジルメチレン(シクロペンタジエニル)(テトラメチルシクロペンタジエニル)ジルコニウムジクロライド、ジベンジルメチレン(シクロペンタジエニル)(インデニル)ジルコニウムジクロライド、ジベンジルメチレン(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、ジシクロヘキシルメチレン(シクロペンタジエニル)(インデニル)ジルコニウムジクロライド、ジシクロヘキシル(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、ジシクロヘキシルメチレン(2−メチルシクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、ジフェニルシリル(2,4−ジメチルシクロペンタジエニル)(3’,5’−ジメチル−シクロペンタジエニル)ジルコニウムジクロライド、ジフェニルシリル(2,4−ジメチルシクロペンタジエニル)(3’,5’−ジメチル−シクロペンタジエニル)ジルコニウムジクロライド、ジフェニルシリル(2,3,5−トリメチルシクロペンタジエニル)(2,4,5−トリメチルシクロペンタジエニル)ジルコニウムジクロライド、テトラフェニルジシリル(シクロペンタジエニル)(インデニル)ジルコニウムジクロライド、テトラフェニルジシリル(3−メチルシクロペンタジエニル)(インデニル)ジルコニウムジクロライド、テトラフェニルジシリル(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、ジ−o−トリルシリル(シクロペンタジエニル)(トリメチルシクロペンタジエニル)ジルコニウムジクロライド、ジ−o−トリルシリル(シクロペンタジエニル)(テトラメチルシクロペンタジエニル)ジルコニウムジクロライド、ジ−o−トリルシリル(シクロペンタジエニル)(3,4−ジエチルシクロペンタジエニル)ジルコニウムジクロライド、ジ−o−トリルシリル(シクロペンタジエニル)(トリエチルシクロペンタジエニル)ジルコニウムジクロライド、ジベンジルシリル(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、ジベンジルシリル(シクロペンタジエニル)(2,7−ジ−t−ブチル−フルオレニル)ジルコニウムジクロライド、ジシクロヘキシルシリル(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、類似チタニウム化合物など、およびその組合わせ。
(2−メチルインデニル)(2−メチルインデニル)ジルコニウムジクロライド、(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、(インデニル)(フルオレニル)ジルコニウムジクロライド、(シクロペンタジエニル)(4,5,6,7−テトラヒドロ−インデニル)ジルコニウムジクロライド、(シクロペンタジエニル)(2−メチルインデニル)ジルコニウムジクロライド、(2,4−ジメチルシクロ−ペンタジエニル)(3’,5’−ジメチルシクロペンタジエニル)ジルコニウムジクロライド、(2−メチル−4−tert−ブチルシクロ−ペンタジエニル)(3’−tert−ブチル−5’−メチルシクロペンタジエニル)ジルコニウムジクロライド、(2,3,5−トリメチルシクロペンタジエニル)(2’,4’,5’−トリメチルシクロペンタジエニル)ジルコニウムジクロライド、(シクロペンタジエニル)(3,4−ジメチルシクロペンタジエニル)ジルコニウムジクロライド、(シクロペンタジエニル)(インデニル)ジルコニウムジクロライド、(シクロペンタジエニル)(テトラメチルシクロペンタジエニル)ジルコニウムジクロライド、(シクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、(シクロペンタジエニル)(トリメチルシクロペンタジエニル)ジルコニウムジクロライド、(シクロペンタジエニル)(トリエチルシクロペンタジエニル)ジルコニウムジクロライド、(シクロペンタジエニル)(2,7−ジ−t−ブチル−フルオレニル)ジルコニウムジクロライド、(2−メチルシクロペンタジエニル)(フルオレニル)ジルコニウムジクロライド、(3−メチルシクロペンタジエニル)(インデニル)ジルコニウムジクロライド、類似チタニウム化合物など、およびその組合わせ。
348ppmのアルミニウムを含有するメタロセン触媒およびメチルアルモキサン(MAO)補助触媒を用いて生成された粗製ポリデセン物質100gを、室温において15分間にわたり水25mlで洗浄し、分離し、次いでアスベストの細かいフィルター(1μm)に通して濾過した。有機相を分離し、次いで蒸発させた。最終粗製ポリデセン物質は6ppmより少ない量のアルミニウムを含有していた。
Claims (16)
- 1種または2種以上のハロゲン化アルキル、ハロゲン化アルコキシ、ハロゲン化金属、オキシハロゲン化金属、アルキル金属、アルコキシ金属、ホウ素化合物および配位金属化合物(ここで、金属は第III族、第IV族、第V族、第VI族および/または第VIII族金属である)を含む残留触媒を含む粗製有機生成物から当該残留触媒のレベルを減少させる方法であって、粗製有機生成物を吸着システムにおいて固形吸着剤と接触させることを含む方法。
- 粗製有機生成物がポリマーである、請求項1に記載の方法。
- 粗製有機生成物がポリオレフィンである、請求項1に記載の方法。
- 粗製有機生成物がポリアルファオレフィンである、請求項1に記載の方法。
- 粗製有機生成物がポリデセンである、請求項1に記載の方法。
- 粗製有機生成物がアルキル化反応またはアルキル交換反応に由来する、請求項1に記載の方法。
- 粗製有機生成物がアルキル化ベンゼンまたはアルキル化ジフェニルアミンである、請求項1に記載の方法。
- 粗製有機生成物がエチルベンゼンまたはノニル化ジフェニルアミンである、請求項1に記載の方法。
- ハロゲン化物が塩素、臭素およびその混合物からなる群から選択される、請求項1に記載の方法。
- 第III族金属がアルミニウムであり、第VIII族金属が鉄であり、および第IV族〜第VI族金属がチタニウム、ジルコニウム、ハフニウム、バナジウム、ニオビウム、タンタリウム、クロミウム、モリブデニウム、タングステンおよびその混合物からなる群から選択される、請求項1に記載の方法。
- 吸着剤がアルカリ金属またはアルカリ土類金属の塩基性化合物である、請求項1に記載の方法。
- 吸着剤が、酸性化合物、シリカゲル、マグネシウム、カルシウム、ストロンチウムまたはバリウムのアルカリ土類金属の酸化物または水酸化物、またはナトリウムもしくはカリウムの酸化物または水酸化物である、請求項1に記載の方法。
- 触媒量の水を添加することをさらに含む、請求項1に記載の方法。
- 粗製有機生成物を触媒量の水および吸着剤で処理する、請求項12に記載の方法。
- 粗製有機生成物がポリデセンであり、当該方法がポリデセンへのデセンの添加をさらに含む、請求項1に記載の方法。
- 請求項1の方法によって得られる有機生成物。
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JP5155318B2 (ja) | 2013-03-06 |
EP2395028A1 (en) | 2011-12-14 |
EP2059538A2 (en) | 2009-05-20 |
CN101511878B (zh) | 2014-01-08 |
EP2059538B1 (en) | 2011-10-19 |
WO2008030387A2 (en) | 2008-03-13 |
US7601255B2 (en) | 2009-10-13 |
US20080053873A1 (en) | 2008-03-06 |
KR20090064371A (ko) | 2009-06-18 |
RU2434884C2 (ru) | 2011-11-27 |
RU2009112388A (ru) | 2010-10-20 |
WO2008030387A3 (en) | 2008-10-02 |
EP2395028B1 (en) | 2013-03-06 |
CN101511878A (zh) | 2009-08-19 |
ATE529452T1 (de) | 2011-11-15 |
KR101361226B1 (ko) | 2014-02-10 |
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