JP2010204899A - 流体制御装置 - Google Patents
流体制御装置 Download PDFInfo
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- JP2010204899A JP2010204899A JP2009049045A JP2009049045A JP2010204899A JP 2010204899 A JP2010204899 A JP 2010204899A JP 2009049045 A JP2009049045 A JP 2009049045A JP 2009049045 A JP2009049045 A JP 2009049045A JP 2010204899 A JP2010204899 A JP 2010204899A
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- 239000012530 fluid Substances 0.000 title claims abstract description 198
- 238000011144 upstream manufacturing Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 238000005553 drilling Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0396—Involving pressure control
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Abstract
【解決手段】 流体制御装置1は、流体制御部2と流体導入部3とを有している。流体導入部3は、3つに分けられており、入口側に配置されてそれぞれ2×N/2個の開閉弁23からなる第1および第2入口側遮断開放部5,6と、4×M個の開閉弁23からなり、第1および第2入口側遮断開放部5,6と流体制御部2との間に配置された流体制御部側遮断開放部7とからなる。
【選択図】 図1
Description
γ:流体の標準状態に於ける密度、κ:流体の比熱比、R:流体定数、k:流体種類に依存しない比例定数。
(2)(4) 流体制御部
(3) 流体導入部
(5)(6) 第1および第2入口側遮断開放部
(7) 流体制御部側遮断開放部
(8)(9)(10)(11)第1〜第4入口側遮断開放部
(12)(13) 第1および第2流体制御部側遮断開放部
(21)(22) 流量制御器
(23) 開閉弁
(31) コントロール弁
(32) 駆動部
(33) 圧力検出器
(34) オリフィス
(42) 演算制御回路(演算制御装置)
L1〜L8 流体制御ライン
Claims (5)
- 1つの流量制御器を基本構成要素として入口および出口を1つずつ有する1列の流体制御ラインがM列配置された流体制御部と、複数の開閉弁によって入口数がN(>M)で出口数がMとなるように構成された流体導入部とを有し、流体導入部のM個の出口と流体制御部のM個の入口とがそれぞれ1:1で接続されている流体制御装置において、
流体導入部は、複数の開閉弁からなり入口側に配置されて入口の総数がN個で出口の総数がK個である入口側遮断開放部と、複数の開閉弁からなり入口側遮断開放部と流体制御部との間に配置されて入口の総数がK個で出口の総数がM個である流体制御部側遮断開放部とに分けられるとともに、入口側遮断開放部は、それぞれ2以上の所要数の開閉弁を有する複数のグループに分けられていることを特徴とする流体制御装置。 - 流体導入部は、それぞれN1×2個および(N−N1)×2個の開閉弁からなる第1および第2入口側遮断開放部と、4×M個の開閉弁からなる流体制御部側遮断開放部とからなる請求項1の流体制御装置。
- 流体導入部は、N=N1+N2+N3+N4として、それぞれN1,N2,N3およびN4個の開閉弁からなる第1から第4までの入口側遮断開放部と、4×M個の開閉弁からなる流体制御部側遮断開放部とからなる請求項1の流体制御装置。
- 流体導入部は、それぞれN/4個の開閉弁からなる第1から第4までの入口側遮断開放部と、それぞれ2×M/2個の開閉弁からなる第1および第2の流体制御部側遮断開放部とからなる請求項1の流体制御装置。
- 流量制御器は、オリフィスの上流側圧力を下流側圧力の約2倍以上に保持した状態で流体の流量制御を行なう圧力式のものであって、金属薄板に微小な孔を穿設して形成されかつ所要の流量特性を具備したオリフィスと、オリフィスの上流側に設けたコントロール弁と,コントロール弁とオリフィス間に設けた圧力検出器と、圧力検出器の検出圧力Pから流量QcをQc=K×P(但しKは定数)として演算するとともに、流量指令信号Qsと前記演算した流量信号Qcとの差を制御信号Qyとしてコントロール弁の駆動部へ出力する演算制御装置とから構成され、コントロール弁の開閉によりオリフィス上流側圧力を調整し、オリフィス下流側流量を制御するものとされており、M個の流量制御器を有するM列の流体制御ラインがm(<M)個の該圧力式流量制御器を有するM列の流体制御ラインで置き換えられていることを特徴とする請求項1から4までのいずれかの流体制御装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009049045A JP5216632B2 (ja) | 2009-03-03 | 2009-03-03 | 流体制御装置 |
PCT/JP2009/068982 WO2010100792A1 (ja) | 2009-03-03 | 2009-11-06 | 流体制御装置 |
US13/203,866 US9169558B2 (en) | 2009-03-03 | 2009-11-06 | Fluid control apparatus |
CN200980157836XA CN102341760B (zh) | 2009-03-03 | 2009-11-06 | 流体控制装置 |
KR1020117020923A KR101661003B1 (ko) | 2009-03-03 | 2009-11-06 | 유체 제어 장치 |
TW099105894A TWI483089B (zh) | 2009-03-03 | 2010-03-02 | 流體控制裝置 |
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JP2009049045A JP5216632B2 (ja) | 2009-03-03 | 2009-03-03 | 流体制御装置 |
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JP2010204899A true JP2010204899A (ja) | 2010-09-16 |
JP5216632B2 JP5216632B2 (ja) | 2013-06-19 |
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JP2009049045A Active JP5216632B2 (ja) | 2009-03-03 | 2009-03-03 | 流体制御装置 |
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US (1) | US9169558B2 (ja) |
JP (1) | JP5216632B2 (ja) |
KR (1) | KR101661003B1 (ja) |
CN (1) | CN102341760B (ja) |
TW (1) | TWI483089B (ja) |
WO (1) | WO2010100792A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011233841A (ja) * | 2010-04-30 | 2011-11-17 | Tokyo Electron Ltd | 半導体製造装置用のガス供給装置 |
KR20130037187A (ko) | 2011-10-05 | 2013-04-15 | 가부시키가이샤 호리바 에스텍 | 유체 기구 및 상기 유체 기구를 구성하는 지지 부재 및 유체 제어 시스템 |
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TWI483089B (zh) | 2015-05-01 |
TW201040683A (en) | 2010-11-16 |
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CN102341760A (zh) | 2012-02-01 |
US20120031500A1 (en) | 2012-02-09 |
US9169558B2 (en) | 2015-10-27 |
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