JP2010192565A - 半導体装置 - Google Patents
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- JP2010192565A JP2010192565A JP2009033688A JP2009033688A JP2010192565A JP 2010192565 A JP2010192565 A JP 2010192565A JP 2009033688 A JP2009033688 A JP 2009033688A JP 2009033688 A JP2009033688 A JP 2009033688A JP 2010192565 A JP2010192565 A JP 2010192565A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】電流検知領域を主活性領域のIGBT素子領域に隣接して配置し、IGBT素子領域のコレクタ領域を電流検知領域のコレクタ領域に接するまで伸ばす。IGBTとダイオードとの境界部分による影響を受けにくくなるため、IGBT検知電流が安定化する。同様に、電流検知領域を主活性領域のダイオード素子領域に隣接して配置し、ダイオード素子領域のカソード領域を電流検知領域のカソード領域に接するまで伸ばす。これによって、ダイオード検知電流が安定化する。
【選択図】 図6
Description
(特徴1)IGBTとダイオードとの境界は、第2導電型のコレクタ領域と、第1導電型のカソード領域との境界に一致する。
(特徴2)N型を第1導電型とし、P型を第2導電型としている。
(特徴3)主活性領域、電流検知領域は、トレンチ型の半導体装置である。
2 IGBT主領域
3、31、32、33 電流検知領域
10、20、30 半導体基板
11 第1N+層
12 第1P+層
13 N−層
18 トレンチゲート
100、200、300 半導体装置
141、142、143 P−層
151、152、152a、153 P層
161、162、163 第2P+層
171、172 第2N+層
191 トレンチ
192 ゲート絶縁膜
193 ゲート電極
331 ダイオード電流検知部
332 IGBT電流検知部
Claims (7)
- IGBT素子領域と、ダイオード素子領域と、IGBT素子領域を流れるIGBT電流を少なくとも検知可能な第1の電流検知領域と、が同一半導体基板内に形成されている半導体装置であって、
IGBT素子領域と第1の電流検知領域の少なくとも一部では、第2導電型のコレクタ領域と第1導電型のドリフト領域と第2導電型のボディ領域が順に積層されており、
ダイオード素子領域では、第1導電型のカソード領域と第1導電型のドリフト領域と第2導電型のボディ領域が順に積層されており、
第1の電流検知領域は、IGBT素子領域に隣接して配置されており、
IGBT素子領域のコレクタ領域が第1の電流検知領域のコレクタ領域に接するまで伸びていることを特徴とする半導体装置。 - 第1の電流検知領域の全域で、第2導電型のコレクタ領域と第1導電型のドリフト領域と第2導電型のボディ領域が順に積層されており、
半導体基板にはダイオード素子領域を流れるダイオード電流を検知可能な第2の電流検知領域がさらに形成されており、
第2の電流検知領域には、第1導電型のカソード領域と第1導電型のドリフト領域と第2導電型のボディ領域が順に積層されており、
第2の電流検知領域は、ダイオード素子領域に隣接して配置されており、
ダイオード素子領域のカソード領域が第2の電流検知領域のカソード領域に接するまで伸びていることを特徴とする請求項1に記載の半導体装置。 - 前記第1の電流検知領域に隣接して前記第2の電流検知領域が配置されていることを特徴とする請求項2に記載の半導体装置。
- 半導体基板には、前記第1の電流検知領域と前記第2の電流検知領域の間に不活性領域がさらに形成されていることを特徴とする請求項3に記載の半導体装置。
- 前記第1の電流検知領域のコレクタ領域と前記第2の電流検知領域のカソード領域は、それぞれ前記不活性領域まで伸びていることを特徴とする請求項4に記載の半導体装置。
- 第1の電流検知領域は、ダイオード素子領域を流れるダイオード電流を検知可能となっており、
第1の電流検知領域のうちコレクタ領域が形成されていない部分では、第1導電型のカソード領域と第1導電型のドリフト領域と第2導電型のボディ領域が順に積層されており、
第1の電流検知領域は、ダイオード素子領域に隣接して配置されており、
ダイオード素子領域のカソード領域が第1の電流検知領域のカソード領域に接するまで伸びていることを特徴とする請求項1に記載の半導体装置。 - IGBT素子領域と、ダイオード素子領域と、ダイオード素子領域を流れるダイオード電流を検知するダイオード電流検知領域と、が同一半導体基板内に形成されている半導体装置であって、
前記IGBT素子領域には、第2導電型のコレクタ領域と第1導電型のドリフト領域と第2導電型のボディ領域が順に積層されており、
前記ダイオード素子領域とダイオード電流検知領域には、第1導電型のカソード領域と第1導電型のドリフト領域と第2導電型のボディ領域が順に積層されており、
前記ダイオード電流検知領域は、ダイオード素子領域に隣接して配置されており、
前記ダイオード素子領域のカソード領域が前記ダイオード電流検知領域のカソード領域に接するまで伸びていることを特徴とする半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009033688A JP4877337B2 (ja) | 2009-02-17 | 2009-02-17 | 半導体装置 |
CN201080008205.4A CN102318072B (zh) | 2009-02-17 | 2010-02-12 | 半导体器件 |
PCT/JP2010/052488 WO2010095700A2 (en) | 2009-02-17 | 2010-02-12 | Semiconductor device |
US13/201,791 US8723220B2 (en) | 2009-02-17 | 2010-02-12 | Semiconductor device |
DE112010000738.1T DE112010000738B4 (de) | 2009-02-17 | 2010-02-12 | Halbleitervorrichtung |
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JP2009033688A JP4877337B2 (ja) | 2009-02-17 | 2009-02-17 | 半導体装置 |
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JP2011222604A Division JP5200148B2 (ja) | 2011-10-07 | 2011-10-07 | 半導体装置 |
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JP4877337B2 JP4877337B2 (ja) | 2012-02-15 |
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US (1) | US8723220B2 (ja) |
JP (1) | JP4877337B2 (ja) |
CN (1) | CN102318072B (ja) |
DE (1) | DE112010000738B4 (ja) |
WO (1) | WO2010095700A2 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012186206A (ja) * | 2011-03-03 | 2012-09-27 | Mitsubishi Electric Corp | 半導体装置 |
US8471291B2 (en) | 2010-05-07 | 2013-06-25 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
WO2014118859A1 (ja) * | 2013-01-31 | 2014-08-07 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2015018861A (ja) * | 2013-07-09 | 2015-01-29 | 三菱電機株式会社 | 半導体装置 |
JP2015167208A (ja) * | 2014-03-04 | 2015-09-24 | トヨタ自動車株式会社 | 半導体装置 |
JP5979570B2 (ja) * | 2013-07-10 | 2016-08-24 | パナソニックIpマネジメント株式会社 | 半導体装置、及びそれを用いたインバータ |
US9972707B2 (en) | 2014-02-10 | 2018-05-15 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
JP2018181955A (ja) * | 2017-04-06 | 2018-11-15 | 富士電機株式会社 | 半導体装置 |
JP2019149497A (ja) * | 2018-02-28 | 2019-09-05 | 富士電機株式会社 | 半導体装置 |
WO2022202089A1 (ja) * | 2021-03-26 | 2022-09-29 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011111500A1 (ja) * | 2010-03-09 | 2011-09-15 | 富士電機システムズ株式会社 | 半導体装置 |
JP5932623B2 (ja) | 2012-12-05 | 2016-06-08 | 株式会社 日立パワーデバイス | 半導体装置およびそれを用いた電力変換装置 |
JP2015176927A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 半導体装置および絶縁ゲート型バイポーラトランジスタ |
CN105896999B (zh) * | 2015-01-20 | 2018-07-27 | 扬州大学 | 一种由阻塞二极管和偏置二极管相组合的电流检测电路 |
JP6588363B2 (ja) * | 2016-03-09 | 2019-10-09 | トヨタ自動車株式会社 | スイッチング素子 |
JP6805620B2 (ja) * | 2016-08-10 | 2020-12-23 | 富士電機株式会社 | 半導体装置 |
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2009
- 2009-02-17 JP JP2009033688A patent/JP4877337B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-12 CN CN201080008205.4A patent/CN102318072B/zh active Active
- 2010-02-12 US US13/201,791 patent/US8723220B2/en active Active
- 2010-02-12 WO PCT/JP2010/052488 patent/WO2010095700A2/en active Application Filing
- 2010-02-12 DE DE112010000738.1T patent/DE112010000738B4/de active Active
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Also Published As
Publication number | Publication date |
---|---|
WO2010095700A3 (en) | 2011-01-20 |
DE112010000738B4 (de) | 2014-01-23 |
WO2010095700A2 (en) | 2010-08-26 |
US20110297934A1 (en) | 2011-12-08 |
JP4877337B2 (ja) | 2012-02-15 |
US8723220B2 (en) | 2014-05-13 |
CN102318072B (zh) | 2014-01-22 |
DE112010000738T5 (de) | 2013-01-17 |
CN102318072A (zh) | 2012-01-11 |
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