JP2009543372A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009543372A5 JP2009543372A5 JP2009519426A JP2009519426A JP2009543372A5 JP 2009543372 A5 JP2009543372 A5 JP 2009543372A5 JP 2009519426 A JP2009519426 A JP 2009519426A JP 2009519426 A JP2009519426 A JP 2009519426A JP 2009543372 A5 JP2009543372 A5 JP 2009543372A5
- Authority
- JP
- Japan
- Prior art keywords
- type
- barrier region
- group iii
- iii nitride
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Claims (13)
- 装置であって、
nタイプ3族窒化物層及びpタイプ3族窒化物層並びに該nタイプ3族窒化物層とpタイプ3族窒化物層の間のジャンクションからなる構造体であって、該構造体が複数の角錐体を有する、構造体からなり、
該量子ウェルが該ジャンクションに位置し、
該nタイプ3族窒化物層と該pタイプ3族窒化物層の一方の連続面が該角錐体の外表面を形成している装置。
- 請求項1の装置において、該nタイプ及びpタイプ3族窒化物層間に電圧が印加されるときに該角錐体から発光するように該構造体が構成された装置。
- 請求項2の装置において、該量子ウェルが量子ウェル層及びバリア層を有し、該量子ウェル層が該バリア層間に介在し、該量子ウェル層が一の3族窒化物からなり、該バリア層が他の3族窒化物からなる装置。
- 請求項3の装置において、該量子ウェル層の該一の3族窒化物がガリウムとインジウムの合金又はガリウムとアルミニウムの合金からなり、該バリア層の該他の3族窒化物が窒化ガリウムからなる装置。
- 装置であって、
基板上に配置されて発光するように構成された複数の結晶構造体であって、各構造体がnタイプバリア領域及びpタイプバリア領域並びにその間のジャンクションを有し、該ジャンクションが該nタイプバリア領域及び該pタイプバリア領域の表面に位置し、該表面が該基板の平坦面に対して傾斜している傾斜面である、複数の結晶構造体からなり、
該nタイプバリア領域及び該pタイプバリア領域の一方の該傾斜面が、該nタイプバリア領域及び該pタイプバリア領域の前記一方の平坦なベース部を介して連続的に相互接続され、該nタイプバリア領域及び該pタイプバリア領域の他方が、該傾斜面を連続的に被覆する外側層を備える、装置。
- 請求項5の装置において、該傾斜面の各々が該基板の平坦面に対して55°以上65°以下の角度をなしている装置。
- 装置を製造する方法であって、
発光することができる結晶構造体を形成するステップからなり、該形成するステップが、
第1のバリア領域を基板上に形成するステップであって、該第1のバリア領域がベース部及び該基板の平坦面に対して傾斜した傾斜面を有し、該傾斜面が該ベース部を介して相互接続され、該ベース部が該基板上に位置している、ステップ、及び
該傾斜面にジャンクションを形成するために、第2のバリア領域を該第1のバリア領域上に形成するステップであって、該第1のバリア領域がnタイプ3族窒化物結晶又はpタイプ3族窒化物結晶の一方からなり、該第2のバリア領域がnタイプ3族窒化物結晶又はpタイプ3族窒化物結晶の他方からなる、ステップ
を備え、
該第2のバリア領域が該相互接続された傾斜面を連続的に被覆し、量子ウェルが該ジャンクションに位置している、方法。
- 請求項7の方法において、該基板上のAIN層上のバリア核層上の該第1のバリア領域の一部分がM極性面を有し、及び該基板直上に該第1のバリア領域の異なる部分がN極性上面を有し、
該第1のバリア領域を形成するステップが、該第1のバリア領域のN極性面をウエットエッチングすることによって該傾斜面を形成することを含む、方法。
- 請求項5の装置において、該nタイプ及びpタイプバリア領域間に電圧が印加されるときに前記結晶構造体の各々がその外表面から発光するように構成され、該構造体の該外表面が該基板の平坦面に対して傾斜している、装置。
- 請求項1の装置において、前記nタイプ3族窒化物層と前記pタイプ3族窒化物層の他方が前記ジャンクションにおいて窒素極性面を有する、装置。
- 請求項1の装置において、前記角錐体が六角角錐体である装置。
- 請求項5の装置において、前記nタイプ3バリア領域と前記pタイプバリア領域の他方が前記ジャンクションにおいてN極性面を有する、装置。
- 請求項7の方法において、前記傾斜面が角錐を形成している、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/456,428 US7952109B2 (en) | 2006-07-10 | 2006-07-10 | Light-emitting crystal structures |
PCT/US2007/005597 WO2008008097A1 (en) | 2006-07-10 | 2007-03-06 | Light-emitting crystal structures |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009543372A JP2009543372A (ja) | 2009-12-03 |
JP2009543372A5 true JP2009543372A5 (ja) | 2010-12-02 |
Family
ID=38328558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009519426A Pending JP2009543372A (ja) | 2006-07-10 | 2007-03-06 | 発光結晶構造体 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7952109B2 (ja) |
EP (1) | EP2041803A1 (ja) |
JP (1) | JP2009543372A (ja) |
KR (1) | KR20090018721A (ja) |
CN (1) | CN101490859A (ja) |
WO (1) | WO2008008097A1 (ja) |
Families Citing this family (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6986693B2 (en) * | 2003-03-26 | 2006-01-17 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
US9130119B2 (en) * | 2006-12-11 | 2015-09-08 | The Regents Of The University Of California | Non-polar and semi-polar light emitting devices |
US7982205B2 (en) * | 2006-01-12 | 2011-07-19 | National Institute Of Advanced Industrial Science And Technology | III-V group compound semiconductor light-emitting diode |
KR100755598B1 (ko) * | 2006-06-30 | 2007-09-06 | 삼성전기주식회사 | 질화물 반도체 발광소자 어레이 |
SG140473A1 (en) * | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
WO2008073385A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices |
JP5003527B2 (ja) * | 2008-02-22 | 2012-08-15 | 住友電気工業株式会社 | Iii族窒化物発光素子、及びiii族窒化物系半導体発光素子を作製する方法 |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20090301388A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | Capsule for high pressure processing and method of use for supercritical fluids |
US8871024B2 (en) * | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20090320745A1 (en) * | 2008-06-25 | 2009-12-31 | Soraa, Inc. | Heater device and method for high pressure processing of crystalline materials |
WO2011044554A1 (en) | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
CN105762249A (zh) | 2008-08-04 | 2016-07-13 | Soraa有限公司 | 使用非极性或半极性的含镓材料和磷光体的白光器件 |
US8323405B2 (en) * | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8430958B2 (en) * | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US8979999B2 (en) * | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US7976630B2 (en) | 2008-09-11 | 2011-07-12 | Soraa, Inc. | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
US8354679B1 (en) * | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
US20100295088A1 (en) * | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US20100147210A1 (en) * | 2008-12-12 | 2010-06-17 | Soraa, Inc. | high pressure apparatus and method for nitride crystal growth |
US9589792B2 (en) | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
US8461071B2 (en) * | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US20110100291A1 (en) * | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
TW201032350A (en) * | 2009-02-20 | 2010-09-01 | Univ Nat Central | A manufacturing method of LED |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
US8294163B2 (en) * | 2010-02-01 | 2012-10-23 | Hermes-Epitek Corp. | Optoelectronic component with three-dimension quantum well structure and method for producing the same |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
DE102011012928A1 (de) * | 2011-03-03 | 2012-09-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Dünnfilm-Halbleiterkörpers und Dünnfilm-Halbleiterkörper |
US8409892B2 (en) * | 2011-04-14 | 2013-04-02 | Opto Tech Corporation | Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates |
KR101964890B1 (ko) * | 2011-07-12 | 2019-04-03 | 삼성전자주식회사 | 나노구조의 발광소자 |
US8492185B1 (en) | 2011-07-14 | 2013-07-23 | Soraa, Inc. | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices |
US9694158B2 (en) | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
SE537434C2 (sv) * | 2012-06-26 | 2015-04-28 | Polar Light Technologies Ab | Grupp III-nitridstruktur |
US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
CN102867896B (zh) * | 2012-09-26 | 2015-10-14 | 湘能华磊光电股份有限公司 | Led外延结构及其制备方法 |
US9299555B1 (en) | 2012-09-28 | 2016-03-29 | Soraa, Inc. | Ultrapure mineralizers and methods for nitride crystal growth |
EP2943985B1 (en) * | 2013-01-08 | 2021-07-07 | Lumileds LLC | Shaped led for enhanced light extraction efficiency |
KR102037863B1 (ko) * | 2013-03-15 | 2019-10-29 | 삼성전자주식회사 | 반도체 발광소자 및 이를 포함하는 조명 장치 |
DE102013103602A1 (de) * | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung |
US9650723B1 (en) | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
KR102299362B1 (ko) * | 2014-08-21 | 2021-09-08 | 삼성전자주식회사 | 경사진 c-plane 상의 4성분계 양자우물을 포함하는 그린광 발광소자 |
CN105449053B (zh) * | 2014-09-19 | 2018-04-03 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
CN104465929B (zh) * | 2014-11-07 | 2017-09-12 | 中山大学 | 内嵌有源层的三族氮化物微纳发光器件及制备方法 |
FR3032064B1 (fr) * | 2015-01-22 | 2018-03-09 | Aledia | Dispositif optoelectronique et son procede de fabrication |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
EP3371168B1 (en) | 2015-11-06 | 2020-05-27 | H. Hoffnabb-La Roche Ag | Indolin-2-one derivatives |
DE102016103346A1 (de) * | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips und strahlungsemittierender Halbleiterchip |
KR102172865B1 (ko) * | 2016-09-29 | 2020-11-02 | 니치아 카가쿠 고교 가부시키가이샤 | 발광소자 |
US10193018B2 (en) * | 2016-12-29 | 2019-01-29 | Intel Corporation | Compact low power head-mounted display with light emitting diodes that exhibit a desired beam angle |
US10174438B2 (en) | 2017-03-30 | 2019-01-08 | Slt Technologies, Inc. | Apparatus for high pressure reaction |
DE102017120037A1 (de) * | 2017-08-31 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierender Halbleiterchip-Array |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
JP2023513570A (ja) | 2020-02-11 | 2023-03-31 | エスエルティー テクノロジーズ インコーポレイテッド | 改善されたiii族窒化物基板、その製造方法、並びにその使用方法 |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4987377A (en) * | 1988-03-22 | 1991-01-22 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter array integrated distributed amplifiers |
JPH0239131A (ja) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | 周波数間隔安定化方法、光ヘテロダイン又は光ホモダイン通信方法 |
EP0539365B1 (en) | 1990-07-18 | 1997-04-23 | International Business Machines Corporation | Structures and processes for fabricating field emission cathodes |
US5141459A (en) * | 1990-07-18 | 1992-08-25 | International Business Machines Corporation | Structures and processes for fabricating field emission cathodes |
US5334908A (en) * | 1990-07-18 | 1994-08-02 | International Business Machines Corporation | Structures and processes for fabricating field emission cathode tips using secondary cusp |
US5536193A (en) * | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
US5218771A (en) * | 1992-04-15 | 1993-06-15 | Redford Peter M | Orientation sensing apparatus |
JP3244529B2 (ja) * | 1992-04-16 | 2002-01-07 | アジレント・テクノロジーズ・インク | 面発光型第2高調波生成素子 |
US5359256A (en) * | 1992-07-30 | 1994-10-25 | The United States Of America As Represented By The Secretary Of The Navy | Regulatable field emitter device and method of production thereof |
US5449435A (en) * | 1992-11-02 | 1995-09-12 | Motorola, Inc. | Field emission device and method of making the same |
US5345456A (en) * | 1993-03-11 | 1994-09-06 | National Research Council Of Canada | Spatially addressable surface emission sum frequency device |
US5363021A (en) * | 1993-07-12 | 1994-11-08 | Cornell Research Foundation, Inc. | Massively parallel array cathode |
US5814156A (en) * | 1993-09-08 | 1998-09-29 | Uvtech Systems Inc. | Photoreactive surface cleaning |
US5440574A (en) * | 1994-06-02 | 1995-08-08 | Spectra-Physics Laserplane, Inc. | Solid-state laser |
US5450429A (en) * | 1994-06-02 | 1995-09-12 | Spectra-Physics Laserplane, Inc. | Efficient linear frequency doubled solid-state laser |
US5420876A (en) * | 1994-06-02 | 1995-05-30 | Spectra-Physics Laserplane, Inc. | Gadolinium vanadate laser |
US5479431A (en) * | 1994-06-02 | 1995-12-26 | Spectra-Physics Laserplane, Inc. | Solid-state laser with active etalon and method therefor |
JPH0851248A (ja) | 1994-08-09 | 1996-02-20 | Hitachi Ltd | 内部共振型面発光shgレーザ |
DE19601991A1 (de) * | 1995-01-31 | 1996-08-01 | Zeiss Carl Fa | Laser-Anordung und Verfahren zum Betrieb einer derartigen Laser-Anordnung |
US5628659A (en) * | 1995-04-24 | 1997-05-13 | Microelectronics And Computer Corporation | Method of making a field emission electron source with random micro-tip structures |
US5915164A (en) * | 1995-12-28 | 1999-06-22 | U.S. Philips Corporation | Methods of making high voltage GaN-A1N based semiconductor devices |
JP2917898B2 (ja) * | 1996-03-29 | 1999-07-12 | 日本電気株式会社 | 電界放出冷陰極素子およびその使用方法 |
JP3764792B2 (ja) | 1997-02-20 | 2006-04-12 | シャープ株式会社 | 窒化物半導体のエッチング方法 |
US6218771B1 (en) * | 1998-06-26 | 2001-04-17 | University Of Houston | Group III nitride field emitters |
JP2000149765A (ja) | 1998-11-13 | 2000-05-30 | Ise Electronics Corp | 蛍光表示装置 |
US6172325B1 (en) * | 1999-02-10 | 2001-01-09 | Electro Scientific Industries, Inc. | Laser processing power output stabilization apparatus and method employing processing position feedback |
US7161148B1 (en) | 1999-05-31 | 2007-01-09 | Crystals And Technologies, Ltd. | Tip structures, devices on their basis, and methods for their preparation |
DE19943406C2 (de) * | 1999-09-10 | 2001-07-19 | Osram Opto Semiconductors Gmbh | Lichtemissionsdiode mit Oberflächenstrukturierung |
US6265322B1 (en) | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
JP3882539B2 (ja) * | 2000-07-18 | 2007-02-21 | ソニー株式会社 | 半導体発光素子およびその製造方法、並びに画像表示装置 |
JP4595198B2 (ja) * | 2000-12-15 | 2010-12-08 | ソニー株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
JP4724924B2 (ja) * | 2001-02-08 | 2011-07-13 | ソニー株式会社 | 表示装置の製造方法 |
JP2002270516A (ja) * | 2001-03-07 | 2002-09-20 | Nec Corp | Iii族窒化物半導体の成長方法、iii族窒化物半導体膜およびそれを用いた半導体素子 |
US6448100B1 (en) * | 2001-06-12 | 2002-09-10 | Hewlett-Packard Compnay | Method for fabricating self-aligned field emitter tips |
US6891187B2 (en) * | 2001-08-17 | 2005-05-10 | Lucent Technologies Inc. | Optical devices with heavily doped multiple quantum wells |
JP3912117B2 (ja) * | 2002-01-17 | 2007-05-09 | ソニー株式会社 | 結晶成長方法、半導体発光素子及びその製造方法 |
JP2003218395A (ja) * | 2002-01-18 | 2003-07-31 | Sony Corp | 半導体発光素子、半導体レーザ素子及びこれを用いた発光装置 |
US7002182B2 (en) * | 2002-09-06 | 2006-02-21 | Sony Corporation | Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit |
WO2004025733A1 (en) | 2002-09-16 | 2004-03-25 | Hrl Laboratories, Llc | Non-planar nitride-based semiconductor structure and metehod for fabricating the same |
US7099073B2 (en) * | 2002-09-27 | 2006-08-29 | Lucent Technologies Inc. | Optical frequency-converters based on group III-nitrides |
JP2004288799A (ja) * | 2003-03-20 | 2004-10-14 | Sony Corp | 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法 |
US6986693B2 (en) * | 2003-03-26 | 2006-01-17 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
DE10337259B4 (de) * | 2003-08-13 | 2015-08-06 | Robert Bosch Gmbh | Auswerteeinheit für das Messsignal eines mikromechanischen Sensors |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
GB2418532A (en) * | 2004-09-28 | 2006-03-29 | Arima Optoelectronic | Textured light emitting diode structure with enhanced fill factor |
-
2006
- 2006-07-10 US US11/456,428 patent/US7952109B2/en not_active Expired - Fee Related
-
2007
- 2007-03-06 WO PCT/US2007/005597 patent/WO2008008097A1/en active Application Filing
- 2007-03-06 JP JP2009519426A patent/JP2009543372A/ja active Pending
- 2007-03-06 KR KR1020097000388A patent/KR20090018721A/ko not_active IP Right Cessation
- 2007-03-06 CN CNA2007800260365A patent/CN101490859A/zh active Pending
- 2007-03-06 EP EP07752311A patent/EP2041803A1/en not_active Withdrawn
-
2010
- 2010-08-09 US US12/852,877 patent/US20100304516A1/en not_active Abandoned
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2009543372A5 (ja) | ||
TWI630729B (zh) | 發光裝置 | |
US8871544B2 (en) | Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same | |
JP2015122525A5 (ja) | ||
US9825200B2 (en) | Micro-light-emitting diode device and method for manufacturing the same | |
JP2012514329A5 (ja) | ||
JP2007273659A5 (ja) | ||
JP2011513957A5 (ja) | ||
JP2007281257A5 (ja) | ||
JP2012216495A5 (ja) | ||
JP2008047515A5 (ja) | ||
RU2011116095A (ru) | Полупроводниковые светоизлучающие устройства, выращенные на композитных подложках | |
WO2007094516A8 (en) | GaN-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR THE FABRICATION THEREOF | |
WO2011031098A3 (ko) | 반도체 발광소자 | |
JP2010080955A5 (ja) | ||
JP2014515560A5 (ja) | ||
WO2004075307A3 (en) | Group iii nitride contact structures for light emitting devices | |
JP2015511407A5 (ja) | ||
JP2009164593A5 (ja) | ||
JP2016189472A5 (ja) | ||
JP2004087908A5 (ja) | ||
WO2012165903A3 (ko) | 반도체 발광 소자,그 제조 방법,이를 포함하는 반도체 발광 소자 패키지 및 레이저 가공 장치 | |
EP2605295A3 (en) | Ultraviolet light emitting device | |
JP2015149342A5 (ja) | ||
JP2014033185A5 (ja) |