JP2009543355A - 進歩型フロントエンド処理のためのクラスターツール - Google Patents

進歩型フロントエンド処理のためのクラスターツール Download PDF

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Publication number
JP2009543355A
JP2009543355A JP2009518542A JP2009518542A JP2009543355A JP 2009543355 A JP2009543355 A JP 2009543355A JP 2009518542 A JP2009518542 A JP 2009518542A JP 2009518542 A JP2009518542 A JP 2009518542A JP 2009543355 A JP2009543355 A JP 2009543355A
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Prior art keywords
substrate
chamber
processing
support
region
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Pending
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JP2009518542A
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English (en)
Japanese (ja)
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JP2009543355A5 (https=
Inventor
ランディア サクール，
アルカディー サモイロフ，
パー‐オヴ ハンソン，
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US11/460,864 external-priority patent/US20070134821A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2009543355A publication Critical patent/JP2009543355A/ja
Publication of JP2009543355A5 publication Critical patent/JP2009543355A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2009518542A 2006-07-03 2007-06-27 進歩型フロントエンド処理のためのクラスターツール Pending JP2009543355A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80651806P 2006-07-03 2006-07-03
US11/460,864 US20070134821A1 (en) 2004-11-22 2006-07-28 Cluster tool for advanced front-end processing
PCT/US2007/072264 WO2008005773A2 (en) 2006-07-03 2007-06-27 Cluster tool for advanced front-end processing

Publications (2)

Publication Number Publication Date
JP2009543355A true JP2009543355A (ja) 2009-12-03
JP2009543355A5 JP2009543355A5 (https=) 2010-08-05

Family

ID=38895329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518542A Pending JP2009543355A (ja) 2006-07-03 2007-06-27 進歩型フロントエンド処理のためのクラスターツール

Country Status (5)

Country Link
EP (1) EP2041774A2 (https=)
JP (1) JP2009543355A (https=)
KR (1) KR20090035578A (https=)
TW (1) TW200811916A (https=)
WO (1) WO2008005773A2 (https=)

Cited By (16)

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JP2013514673A (ja) * 2009-12-17 2013-04-25 アプライド マテリアルズ インコーポレイテッド Ｎｍｏｓエピ層の形成方法
JP2013543651A (ja) * 2010-09-14 2013-12-05 アプライド マテリアルズ インコーポレイテッド デバイス歩留まり向上のための移送チャンバ計量
JP2016072625A (ja) * 2014-09-30 2016-05-09 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ援用原子層堆積におけるｒｆ補償のための方法及び装置
KR20160126914A (ko) * 2015-04-23 2016-11-02 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱 시스템에서의 외부 기판 회전
JP2018527456A (ja) * 2015-06-19 2018-09-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 多層金属誘電体膜のｐｖｄ堆積とアニール
JP2019501518A (ja) * 2015-11-13 2019-01-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ， Ｉｎｃ． 半導体デバイスの処理方法並びに半導体デバイスの処理システムおよび装置
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
JP2020123675A (ja) * 2019-01-30 2020-08-13 日立金属株式会社 半導体製造装置の管理システム及びその方法
KR20200124315A (ko) * 2018-03-20 2020-11-02 도쿄엘렉트론가부시키가이샤 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법
JP2021518673A (ja) * 2018-03-20 2021-08-02 東京エレクトロン株式会社 統合的な計測を伴う基板処理ツール並びに使用方法
JP2021518674A (ja) * 2018-03-20 2021-08-02 東京エレクトロン株式会社 統合的な半導体処理モジュールを組み込んだ自己認識及び補正異種プラットフォーム及びその使用方法
JP2021168422A (ja) * 2017-09-20 2021-10-21 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
CN114256327A (zh) * 2020-09-25 2022-03-29 爱思开海力士有限公司 半导体器件及其制造方法
JP2023014988A (ja) * 2021-07-07 2023-01-31 アプライド マテリアルズ インコーポレイテッド ゲートスタック形成のための統合湿式洗浄
JP2023014989A (ja) * 2021-07-07 2023-01-31 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長のための統合湿式洗浄
JP2024536938A (ja) * 2021-09-03 2024-10-09 アプライド マテリアルズ インコーポレイテッド １以上の圧力安定化チャンバを有するクラスタツール、システム、及び方法

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US8022372B2 (en) 2008-02-15 2011-09-20 Veeco Instruments Inc. Apparatus and method for batch non-contact material characterization
US7838431B2 (en) * 2008-06-14 2010-11-23 Applied Materials, Inc. Method for surface treatment of semiconductor substrates
US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
KR20120042919A (ko) * 2009-08-13 2012-05-03 김남진 레이어 형성장치
TWI525744B (zh) 2011-05-31 2016-03-11 維克儀器公司 加熱之晶圓載體輪廓勘測
KR102317822B1 (ko) * 2012-07-02 2021-10-25 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착에 의한 알루미늄-질화물 버퍼 및 활성 층들
KR102214961B1 (ko) * 2012-08-08 2021-02-09 어플라이드 머티어리얼스, 인코포레이티드 링크된 진공 프로세싱 툴들 및 그 사용 방법들
KR101463984B1 (ko) * 2013-02-15 2014-11-26 최대규 플라즈마 처리 시스템
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
US20160240405A1 (en) * 2015-02-12 2016-08-18 Applied Materials, Inc. Stand alone anneal system for semiconductor wafers
WO2017073396A1 (ja) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
US20180076065A1 (en) * 2016-09-15 2018-03-15 Applied Materials, Inc. Integrated system for semiconductor process
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
JP7158133B2 (ja) * 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
KR102369163B1 (ko) 2017-04-28 2022-02-28 어플라이드 머티어리얼스, 인코포레이티드 Oled 디바이스들의 제조에서 사용되는 진공 시스템을 세정하기 위한 방법, oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 방법, 및 oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 장치
KR20200142601A (ko) * 2018-05-16 2020-12-22 어플라이드 머티어리얼스, 인코포레이티드 원자 층 자기 정렬 기판 프로세싱 및 통합 툴셋
US20190362989A1 (en) * 2018-05-25 2019-11-28 Applied Materials, Inc. Substrate manufacturing apparatus and methods with factory interface chamber heating
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CN114000192B (zh) * 2021-10-29 2023-10-13 北京北方华创微电子装备有限公司 半导体工艺设备以及晶圆位置状态的监测方法
CN114904822B (zh) * 2022-03-31 2023-09-26 上海果纳半导体技术有限公司 机械手清洗装置、清洗方法及半导体设备

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JP2013514673A (ja) * 2009-12-17 2013-04-25 アプライド マテリアルズ インコーポレイテッド Ｎｍｏｓエピ層の形成方法
JP2013543651A (ja) * 2010-09-14 2013-12-05 アプライド マテリアルズ インコーポレイテッド デバイス歩留まり向上のための移送チャンバ計量
US10103288B2 (en) 2010-09-14 2018-10-16 Applied Materials, Inc. Transfer chamber metrology for improved device yield
JP2016072625A (ja) * 2014-09-30 2016-05-09 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ援用原子層堆積におけるｒｆ補償のための方法及び装置
JP7350035B2 (ja) 2015-04-23 2023-09-25 アプライド マテリアルズ インコーポレイテッド 半導体処理システムにおける外部基板回転
KR20160126914A (ko) * 2015-04-23 2016-11-02 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱 시스템에서의 외부 기판 회전
JP2017005242A (ja) * 2015-04-23 2017-01-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体処理システムにおける外部基板回転
JP2022023889A (ja) * 2015-04-23 2022-02-08 アプライド マテリアルズ インコーポレイテッド 半導体処理システムにおける外部基板回転
US11574825B2 (en) 2015-04-23 2023-02-07 Applied Materials, Inc. External substrate system rotation in a semiconductor processing system
KR102543643B1 (ko) * 2015-04-23 2023-06-13 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱 시스템에서의 외부 기판 회전
US12581896B2 (en) 2015-04-23 2026-03-17 Applied Materials, Inc. External substrate system rotation in a semiconductor processing system
US10879177B2 (en) 2015-06-19 2020-12-29 Applied Materials, Inc. PVD deposition and anneal of multi-layer metal-dielectric film
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