KR20090035578A - 향상된 전단부 처리를 위한 클러스터 기기 - Google Patents

향상된 전단부 처리를 위한 클러스터 기기 Download PDF

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Publication number
KR20090035578A
KR20090035578A KR1020097002228A KR20097002228A KR20090035578A KR 20090035578 A KR20090035578 A KR 20090035578A KR 1020097002228 A KR1020097002228 A KR 1020097002228A KR 20097002228 A KR20097002228 A KR 20097002228A KR 20090035578 A KR20090035578 A KR 20090035578A
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KR
South Korea
Prior art keywords
substrate
chamber
processing
processing apparatus
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020097002228A
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English (en)
Korean (ko)
Inventor
란드히르 타쿠르
아르카디 사모일로브
페르-오베 한슨
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication date
Priority claimed from US11/460,864 external-priority patent/US20070134821A1/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090035578A publication Critical patent/KR20090035578A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020097002228A 2006-07-03 2007-06-27 향상된 전단부 처리를 위한 클러스터 기기 Ceased KR20090035578A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80651806P 2006-07-03 2006-07-03
US60/806,518 2006-07-03
US11/460,864 US20070134821A1 (en) 2004-11-22 2006-07-28 Cluster tool for advanced front-end processing
US11/460,864 2006-07-28

Publications (1)

Publication Number Publication Date
KR20090035578A true KR20090035578A (ko) 2009-04-09

Family

ID=38895329

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097002228A Ceased KR20090035578A (ko) 2006-07-03 2007-06-27 향상된 전단부 처리를 위한 클러스터 기기

Country Status (5)

Country Link
EP (1) EP2041774A2 (https=)
JP (1) JP2009543355A (https=)
KR (1) KR20090035578A (https=)
TW (1) TW200811916A (https=)
WO (1) WO2008005773A2 (https=)

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WO2011019215A3 (ko) * 2009-08-13 2011-04-21 Kim Nam Jin 레이어 형성장치
KR101463984B1 (ko) * 2013-02-15 2014-11-26 최대규 플라즈마 처리 시스템
KR20150022006A (ko) * 2012-07-02 2015-03-03 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착에 의한 알루미늄-질화물 버퍼 및 활성 층들
KR20150041045A (ko) * 2012-08-08 2015-04-15 어플라이드 머티어리얼스, 인코포레이티드 링크된 진공 프로세싱 툴들 및 그 사용 방법들
KR20160030856A (ko) * 2014-09-11 2016-03-21 램 리써치 코포레이션 최신식 메모리 디바이스들에 대한 유전체 보수
WO2016130328A1 (en) * 2015-02-12 2016-08-18 Applied Materials, Inc. Stand alone anneal system for semiconductor wafers
WO2018052479A1 (en) * 2016-09-15 2018-03-22 Applied Materials, Inc. Integrated system for semiconductor process
CN108538747A (zh) * 2017-03-03 2018-09-14 应用材料公司 环境可控的传送模块和处理系统
KR20180135873A (ko) * 2017-04-28 2018-12-21 어플라이드 머티어리얼스, 인코포레이티드 Oled 디바이스들의 제조에서 사용되는 진공 시스템을 세정하기 위한 방법, oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 방법, 및 oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 장치
KR20200123480A (ko) * 2018-03-20 2020-10-29 도쿄엘렉트론가부시키가이샤 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법
KR102418534B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판의 처리를 위한 클러스터 툴 및 그 제어 방법
KR102418530B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판 처리 장치
KR102424853B1 (ko) * 2021-10-12 2022-07-25 주식회사 바코솔루션 반도체 기판 처리 장치
CN114904822A (zh) * 2022-03-31 2022-08-16 上海果纳半导体技术有限公司 机械手清洗装置、清洗方法及半导体设备
US12421596B2 (en) 2019-09-25 2025-09-23 Beneq Oy Method and apparatus for processing surface of a semiconductor substrate

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WO2017073396A1 (ja) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
JP6938491B2 (ja) * 2015-11-13 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ， Ｉｎｃ． 半導体デバイスの処理方法並びに半導体デバイスの処理システムおよび装置
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
KR20220151032A (ko) * 2017-09-20 2022-11-11 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
US11264254B2 (en) * 2018-03-20 2022-03-01 Tokyo Electron Limited Substrate processing tool with integrated metrology and method of using
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KR20200142601A (ko) * 2018-05-16 2020-12-22 어플라이드 머티어리얼스, 인코포레이티드 원자 층 자기 정렬 기판 프로세싱 및 통합 툴셋
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JP7206961B2 (ja) * 2019-01-30 2023-01-18 日立金属株式会社 半導体製造装置の管理システム及びその方法
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CN114000192B (zh) * 2021-10-29 2023-10-13 北京北方华创微电子装备有限公司 半导体工艺设备以及晶圆位置状态的监测方法

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WO2011019215A3 (ko) * 2009-08-13 2011-04-21 Kim Nam Jin 레이어 형성장치
KR20200119918A (ko) * 2012-07-02 2020-10-20 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착에 의한 알루미늄-질화물 버퍼 및 활성 층들
KR20150022006A (ko) * 2012-07-02 2015-03-03 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착에 의한 알루미늄-질화물 버퍼 및 활성 층들
KR20150041045A (ko) * 2012-08-08 2015-04-15 어플라이드 머티어리얼스, 인코포레이티드 링크된 진공 프로세싱 툴들 및 그 사용 방법들
KR101463984B1 (ko) * 2013-02-15 2014-11-26 최대규 플라즈마 처리 시스템
KR20160030856A (ko) * 2014-09-11 2016-03-21 램 리써치 코포레이션 최신식 메모리 디바이스들에 대한 유전체 보수
WO2016130328A1 (en) * 2015-02-12 2016-08-18 Applied Materials, Inc. Stand alone anneal system for semiconductor wafers
WO2018052479A1 (en) * 2016-09-15 2018-03-22 Applied Materials, Inc. Integrated system for semiconductor process
US11164767B2 (en) 2016-09-15 2021-11-02 Applied Materials, Inc. Integrated system for semiconductor process
CN108538746A (zh) * 2017-03-03 2018-09-14 应用材料公司 环境可控的传送模块和处理系统
CN108538747A (zh) * 2017-03-03 2018-09-14 应用材料公司 环境可控的传送模块和处理系统
CN108538747B (zh) * 2017-03-03 2024-01-30 应用材料公司 环境可控的传送模块和处理系统
US11673170B2 (en) 2017-04-28 2023-06-13 Applied Materials, Inc. Method for cleaning a vacuum system used in the manufacture of OLED devices, method for vacuum deposition on a substrate to manufacture OLED devices, and apparatus for vacuum deposition on a substrate to manufacture OLED devices
KR20180135873A (ko) * 2017-04-28 2018-12-21 어플라이드 머티어리얼스, 인코포레이티드 Oled 디바이스들의 제조에서 사용되는 진공 시스템을 세정하기 위한 방법, oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 방법, 및 oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 장치
US12571090B2 (en) 2017-04-28 2026-03-10 Applied Materials, Inc. Method for cleaning a vacuum system used in the manufacture of OLED devices, method for vacuum deposition on a substrate to manufacture OLED devices, and apparatus for vacuum deposition on a substrate to manufacture OLED devices
KR20200123480A (ko) * 2018-03-20 2020-10-29 도쿄엘렉트론가부시키가이샤 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법
US12421596B2 (en) 2019-09-25 2025-09-23 Beneq Oy Method and apparatus for processing surface of a semiconductor substrate
KR102418534B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판의 처리를 위한 클러스터 툴 및 그 제어 방법
KR102424853B1 (ko) * 2021-10-12 2022-07-25 주식회사 바코솔루션 반도체 기판 처리 장치
KR102418530B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판 처리 장치
CN114904822B (zh) * 2022-03-31 2023-09-26 上海果纳半导体技术有限公司 机械手清洗装置、清洗方法及半导体设备
CN114904822A (zh) * 2022-03-31 2022-08-16 上海果纳半导体技术有限公司 机械手清洗装置、清洗方法及半导体设备

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