TW200811916A - Cluster tool for advanced front-end processing - Google Patents

Cluster tool for advanced front-end processing Download PDF

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Publication number
TW200811916A
TW200811916A TW096124192A TW96124192A TW200811916A TW 200811916 A TW200811916 A TW 200811916A TW 096124192 A TW096124192 A TW 096124192A TW 96124192 A TW96124192 A TW 96124192A TW 200811916 A TW200811916 A TW 200811916A
Authority
TW
Taiwan
Prior art keywords
substrate
chamber
processing
support
radiation
Prior art date
Application number
TW096124192A
Other languages
English (en)
Chinese (zh)
Inventor
Randhir Thakur
Arkadii Samoilov
Per-Ove Hansson
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/460,864 external-priority patent/US20070134821A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200811916A publication Critical patent/TW200811916A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW096124192A 2006-07-03 2007-07-03 Cluster tool for advanced front-end processing TW200811916A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80651806P 2006-07-03 2006-07-03
US11/460,864 US20070134821A1 (en) 2004-11-22 2006-07-28 Cluster tool for advanced front-end processing

Publications (1)

Publication Number Publication Date
TW200811916A true TW200811916A (en) 2008-03-01

Family

ID=38895329

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096124192A TW200811916A (en) 2006-07-03 2007-07-03 Cluster tool for advanced front-end processing

Country Status (5)

Country Link
EP (1) EP2041774A2 (https=)
JP (1) JP2009543355A (https=)
KR (1) KR20090035578A (https=)
TW (1) TW200811916A (https=)
WO (1) WO2008005773A2 (https=)

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TWI482224B (zh) * 2008-06-14 2015-04-21 應用材料股份有限公司 半導體基板之表面處理方法
TWI679694B (zh) * 2015-10-28 2019-12-11 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置、基板處理系統及記憶媒體
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
CN111507076A (zh) * 2019-01-29 2020-08-07 北京新唐思创教育科技有限公司 一种用于教学系统的共案课件制作方法、装置和终端
TWI827326B (zh) * 2021-10-29 2023-12-21 大陸商北京北方華創微電子裝備有限公司 半導體製程設備以及晶圓位置狀態的監測方法
TWI883237B (zh) * 2020-08-03 2025-05-11 美商應用材料股份有限公司 在批次熱處理腔室中的晶圓邊緣溫度校正
TWI914910B (zh) 2024-08-09 2026-02-11 波光科技股份有限公司 多腔式原子層鍍膜方法與系統

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US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
KR20120042919A (ko) * 2009-08-13 2012-05-03 김남진 레이어 형성장치
US8999798B2 (en) 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
US9076827B2 (en) * 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
TWI525744B (zh) 2011-05-31 2016-03-11 維克儀器公司 加熱之晶圓載體輪廓勘測
KR102317822B1 (ko) * 2012-07-02 2021-10-25 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착에 의한 알루미늄-질화물 버퍼 및 활성 층들
KR102214961B1 (ko) * 2012-08-08 2021-02-09 어플라이드 머티어리얼스, 인코포레이티드 링크된 진공 프로세싱 툴들 및 그 사용 방법들
KR101463984B1 (ko) * 2013-02-15 2014-11-26 최대규 플라즈마 처리 시스템
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
US9624578B2 (en) * 2014-09-30 2017-04-18 Lam Research Corporation Method for RF compensation in plasma assisted atomic layer deposition
US20160240405A1 (en) * 2015-02-12 2016-08-18 Applied Materials, Inc. Stand alone anneal system for semiconductor wafers
TWI677046B (zh) * 2015-04-23 2019-11-11 美商應用材料股份有限公司 半導體處理系統中的外部基板材旋轉
US10879177B2 (en) 2015-06-19 2020-12-29 Applied Materials, Inc. PVD deposition and anneal of multi-layer metal-dielectric film
JP6938491B2 (ja) * 2015-11-13 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ， Ｉｎｃ． 半導体デバイスの処理方法並びに半導体デバイスの処理システムおよび装置
US20180076065A1 (en) * 2016-09-15 2018-03-15 Applied Materials, Inc. Integrated system for semiconductor process
JP7158133B2 (ja) * 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
KR102369163B1 (ko) 2017-04-28 2022-02-28 어플라이드 머티어리얼스, 인코포레이티드 Oled 디바이스들의 제조에서 사용되는 진공 시스템을 세정하기 위한 방법, oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 방법, 및 oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 장치
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
KR20220151032A (ko) * 2017-09-20 2022-11-11 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
US11264254B2 (en) * 2018-03-20 2022-03-01 Tokyo Electron Limited Substrate processing tool with integrated metrology and method of using
CN112106182A (zh) * 2018-03-20 2020-12-18 东京毅力科创株式会社 结合有集成半导体加工模块的自感知校正异构平台及其使用方法
SG11202009105YA (en) * 2018-03-20 2020-10-29 Tokyo Electron Ltd Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same
KR20200142601A (ko) * 2018-05-16 2020-12-22 어플라이드 머티어리얼스, 인코포레이티드 원자 층 자기 정렬 기판 프로세싱 및 통합 툴셋
US20190362989A1 (en) * 2018-05-25 2019-11-28 Applied Materials, Inc. Substrate manufacturing apparatus and methods with factory interface chamber heating
JP7206961B2 (ja) * 2019-01-30 2023-01-18 日立金属株式会社 半導体製造装置の管理システム及びその方法
FI129628B (en) 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate
KR20220041358A (ko) * 2020-09-25 2022-04-01 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
WO2022186775A1 (en) * 2021-03-02 2022-09-09 Agency For Science, Technology And Research A preparation chamber for cleaning and repair sapphire surface for the epitaxial growth of compound materials
JP7478776B2 (ja) * 2021-07-07 2024-05-07 アプライド マテリアルズ インコーポレイテッド ゲートスタック形成のための統合湿式洗浄
JP7485729B2 (ja) * 2021-07-07 2024-05-16 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長のための統合湿式洗浄
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KR20240029768A (ko) * 2021-09-03 2024-03-06 어플라이드 머티어리얼스, 인코포레이티드 하나 이상의 압력 안정화 챔버들을 갖는 클러스터 툴들, 시스템들 및 방법들
KR102424853B1 (ko) * 2021-10-12 2022-07-25 주식회사 바코솔루션 반도체 기판 처리 장치
KR102418534B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판의 처리를 위한 클러스터 툴 및 그 제어 방법
KR102418530B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판 처리 장치
CN114904822B (zh) * 2022-03-31 2023-09-26 上海果纳半导体技术有限公司 机械手清洗装置、清洗方法及半导体设备

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI482224B (zh) * 2008-06-14 2015-04-21 應用材料股份有限公司 半導體基板之表面處理方法
TWI679694B (zh) * 2015-10-28 2019-12-11 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置、基板處理系統及記憶媒體
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
CN111507076A (zh) * 2019-01-29 2020-08-07 北京新唐思创教育科技有限公司 一种用于教学系统的共案课件制作方法、装置和终端
CN111507076B (zh) * 2019-01-29 2022-07-05 北京新唐思创教育科技有限公司 一种用于教学系统的共案课件制作方法、装置和终端
TWI883237B (zh) * 2020-08-03 2025-05-11 美商應用材料股份有限公司 在批次熱處理腔室中的晶圓邊緣溫度校正
TWI827326B (zh) * 2021-10-29 2023-12-21 大陸商北京北方華創微電子裝備有限公司 半導體製程設備以及晶圓位置狀態的監測方法
TWI914910B (zh) 2024-08-09 2026-02-11 波光科技股份有限公司 多腔式原子層鍍膜方法與系統

Also Published As

Publication number Publication date
EP2041774A2 (en) 2009-04-01
KR20090035578A (ko) 2009-04-09
WO2008005773A3 (en) 2008-02-28
WO2008005773A2 (en) 2008-01-10
JP2009543355A (ja) 2009-12-03

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