JP2018527456A - 多層金属誘電体膜のpvd堆積とアニール - Google Patents
多層金属誘電体膜のpvd堆積とアニール Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 67
- 239000002184 metal Substances 0.000 title claims abstract description 67
- 238000000137 annealing Methods 0.000 title claims description 12
- 230000008021 deposition Effects 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 53
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 230000007935 neutral effect Effects 0.000 claims abstract description 16
- 239000012528 membrane Substances 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000012545 processing Methods 0.000 description 46
- 239000010408 film Substances 0.000 description 29
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 23
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 238000005240 physical vapour deposition Methods 0.000 description 13
- 230000015654 memory Effects 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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Abstract
【選択図】図1
Description
以下の例は、図5で説明した処理チャンバを使用して実行することができる。基板が、酸化物層の堆積のための第1の処理チャンバに移送される。第1の処理チャンバは、基板上にTEOSを堆積させるように構成されたPECVDチャンバである。TEOS層の厚さは250Åである。TEOS層は、PECVDプロセスによって堆積される。堆積されたTEOSの厚さは250Åである。
以下の例は、図5で説明した処理チャンバを使用して実行することができる。基板が、酸化物層の堆積のための第1の処理チャンバに移送される。第1の処理チャンバは、基板上にTEOSを堆積させるように構成されたPECVDチャンバである。TEOS層の厚さは250Åである。TEOS層は、PECVDプロセスによって堆積される。堆積されたTEOSの厚さは250Åである。
以下の例は、図5で説明した処理チャンバを使用して実行することができる。基板が、酸化物層の堆積のための第1の処理チャンバに移送される。第1の処理チャンバは、基板上にTEOSを堆積させるように構成されたPECVDチャンバである。TEOS層の厚さは250Åである。TEOS層は、PECVDプロセスによって堆積される。堆積されたTEOSの厚さは250Åである。
Claims (20)
- 基板上に膜スタックを形成する方法であって、
前記基板上に形成された酸化物層の上に1つ以上の付着層を堆積させることと、
前記1つ以上の付着層の第1の付着層の上に金属層を堆積させることによって、応力中立構造を形成することと
を含む方法。 - 前記金属層の上に第2の付着層を堆積させることをさらに含む、請求項1に記載の方法。
- 前記第1の付着層、前記金属層、および前記第2の付着層が、応力中立構造を形成する、請求項2に記載の方法。
- 前記膜スタックが、少なくとも50層を含むまで、前記第1の付着層、前記金属層、および前記第2の付着層を堆積させることを繰り返すことをさらに含む、請求項2に記載の方法。
- 各付着層が、40Å未満の厚さを有する、請求項4に記載の方法。
- 前記基板上に形成された前記膜スタックをアニールすることをさらに含む、請求項1に記載の方法。
- 前記膜スタックが、少なくとも50層を含むまで、前記1つ以上の付着層および前記金属層を堆積させることを繰り返すことをさらに含む、請求項1に記載の方法。
- 基板上に形成された膜スタック構造であって、
前記基板上に形成された酸化物層の上に堆積された1つ以上の付着層と、
前記1つ以上の付着層の第1の付着層の上に堆積された金属層を含む応力中立構造と
を含む、膜スタック構造。 - 前記金属層の上に堆積された第2の付着層をさらに含む、請求項8に記載の膜スタック構造。
- 前記第1の付着層、前記金属層、および前記第2の付着層が、応力中立構造を形成する、請求項9に記載の膜スタック構造。
- 追加の互い違いの付着層および金属層をさらに含み、前記膜スタックが、少なくとも50層を含む、請求項8に記載の膜スタック構造。
- 各付着層が、40Å未満の厚さを有する、請求項8に記載の膜スタック構造。
- 前記第1の付着層が、WNである、請求項8に記載の膜スタック構造。
- 前記金属層が、Wである、請求項8に記載の膜スタック構造。
- 前記金属が、TiNである、請求項8に記載の膜スタック構造。
- 基板上に膜スタックを形成する方法であって、
前記基板上に形成された酸化物層の上に第1の付着層を堆積させることと、
前記第1の付着層の上に金属層を堆積させることと、
前記金属層の上に第2の付着層を堆積させることによって、応力中立構造を形成することと
を含む方法。 - 前記基板上に形成された前記膜スタックをアニールすることをさらに含む、請求項16に記載の方法。
- 前記膜スタックが、少なくとも50層を含むまで、第1の付着層、金属層、および第2の付着層を堆積させることを繰り返すことをさらに含む、請求項16に記載の方法。
- 前記付着層の各々が、40Å未満の厚さを有する、請求項18に記載の方法。
- 前記第1の付着層が、前記第2の付着層と同じである、請求項16に記載の方法。
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