JP2009543353A - 直接的ソース‐ドレイン電流経路を有する横型トレンチゲートｆｅｔ - Google Patents

直接的ソース‐ドレイン電流経路を有する横型トレンチゲートｆｅｔ Download PDF

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JP2009543353A
JP2009543353A JP2009518494A JP2009518494A JP2009543353A JP 2009543353 A JP2009543353 A JP 2009543353A JP 2009518494 A JP2009518494 A JP 2009518494A JP 2009518494 A JP2009518494 A JP 2009518494A JP 2009543353 A JP2009543353 A JP 2009543353A
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conductivity type
region
fet
stack
trench gate
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Japanese (ja)
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JP2009543353A5 (enExample
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チャンキ ジョン
ゲーリー ドルニー
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フェアチャイルド・セミコンダクター・コーポレーション
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Publication of JP2009543353A publication Critical patent/JP2009543353A/ja
Publication of JP2009543353A5 publication Critical patent/JP2009543353A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009518494A 2006-06-29 2007-06-25 直接的ソース‐ドレイン電流経路を有する横型トレンチゲートｆｅｔ Pending JP2009543353A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/479,149 US7804150B2 (en) 2006-06-29 2006-06-29 Lateral trench gate FET with direct source-drain current path
PCT/US2007/072034 WO2008002879A2 (en) 2006-06-29 2007-06-25 Lateral trench gate fet with direct source-drain current path

Publications (2)

Publication Number Publication Date
JP2009543353A true JP2009543353A (ja) 2009-12-03
JP2009543353A5 JP2009543353A5 (enExample) 2011-12-22

Family

ID=38846448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518494A Pending JP2009543353A (ja) 2006-06-29 2007-06-25 直接的ソース‐ドレイン電流経路を有する横型トレンチゲートｆｅｔ

Country Status (7)

Country Link
US (2) US7804150B2 (enExample)
JP (1) JP2009543353A (enExample)
KR (1) KR101375887B1 (enExample)
CN (1) CN101479851B (enExample)
DE (1) DE112007001578T5 (enExample)
TW (1) TW200810121A (enExample)
WO (1) WO2008002879A2 (enExample)

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JP2019510376A (ja) * 2016-03-22 2019-04-11 ゼネラル・エレクトリック・カンパニイ 高速スイッチング機能を有する超接合パワー半導体デバイス

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US7804150B2 (en) 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path
US8674434B2 (en) 2008-03-24 2014-03-18 Micron Technology, Inc. Impact ionization devices
KR101418398B1 (ko) * 2008-07-04 2014-07-11 페어차일드코리아반도체 주식회사 필드 형성층을 구비하는 고전압 반도체소자 및 그 제조방법
US8482065B2 (en) * 2008-11-25 2013-07-09 Newport Fab, Llc MOS transistor with a reduced on-resistance and area product
US8004051B2 (en) * 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate
US7943445B2 (en) * 2009-02-19 2011-05-17 International Business Machines Corporation Asymmetric junction field effect transistor
JP2012523736A (ja) 2009-04-10 2012-10-04 パンテック カンパニー リミテッド モジューラーソナーシーケンスを用いた信号パターンの生成方法及びその装置
US8575695B2 (en) * 2009-11-30 2013-11-05 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode
JP5636254B2 (ja) 2009-12-15 2014-12-03 株式会社東芝 半導体装置
CN101916783B (zh) * 2010-08-13 2012-07-04 复旦大学 一种凹陷沟道的横向和纵向扩散型场效应晶体管及其制造方法
CN103035674B (zh) * 2012-10-22 2015-10-14 上海华虹宏力半导体制造有限公司 射频横向双扩散场效应晶体管及其制造方法
US9059324B2 (en) * 2013-06-30 2015-06-16 Texas Instruments Incorporated Bi-directional ESD diode structure with ultra-low capacitance that consumes a small amount of silicon real estate
WO2015008550A1 (ja) * 2013-07-19 2015-01-22 日産自動車株式会社 半導体装置及びその製造方法
CN103762241B (zh) * 2014-01-02 2016-08-24 杭州电子科技大学 一种梳状栅纵向沟道soi ldmos单元
JP6340200B2 (ja) * 2014-01-27 2018-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10186573B2 (en) * 2015-09-14 2019-01-22 Maxpower Semiconductor, Inc. Lateral power MOSFET with non-horizontal RESURF structure
US11329150B2 (en) * 2020-04-14 2022-05-10 Nxp Usa, Inc. Termination for trench field plate power MOSFET
US20230411447A1 (en) * 2022-06-21 2023-12-21 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor
US11837658B1 (en) * 2022-06-21 2023-12-05 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor

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JPH09266311A (ja) * 1996-01-22 1997-10-07 Fuji Electric Co Ltd 半導体装置及びその製造方法
JP2001274398A (ja) * 1999-10-19 2001-10-05 Denso Corp 半導体装置及びその製造方法
JP2003534665A (ja) * 2000-05-20 2003-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電界効果デバイス
JP2003534666A (ja) * 2000-05-20 2003-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置
JP2003332570A (ja) * 2002-05-02 2003-11-21 Power Integrations Inc 高電圧トランジスタの製造方法
JP2004006731A (ja) * 2002-03-27 2004-01-08 Toshiba Corp 電界効果型トランジスタおよびその応用装置
JP2004214611A (ja) * 2002-12-18 2004-07-29 Denso Corp 半導体装置およびその製造方法

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JP4764987B2 (ja) * 2000-09-05 2011-09-07 富士電機株式会社 超接合半導体素子
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JP3966151B2 (ja) * 2002-10-10 2007-08-29 富士電機デバイステクノロジー株式会社 半導体素子
DE10309400B4 (de) * 2003-03-04 2009-07-30 Infineon Technologies Ag Halbleiterbauelement mit erhöhter Spannungsfestigkeit und/oder verringertem Einschaltwiderstand
JP4590884B2 (ja) * 2003-06-13 2010-12-01 株式会社デンソー 半導体装置およびその製造方法
US7126166B2 (en) * 2004-03-11 2006-10-24 Semiconductor Components Industries, L.L.C. High voltage lateral FET structure with improved on resistance performance
AT504289A2 (de) * 2005-05-26 2008-04-15 Fairchild Semiconductor Trench-gate-feldeffekttransistoren und verfahren zum bilden derselben
US7804150B2 (en) 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path

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Publication number Priority date Publication date Assignee Title
JPH09266311A (ja) * 1996-01-22 1997-10-07 Fuji Electric Co Ltd 半導体装置及びその製造方法
JP2001274398A (ja) * 1999-10-19 2001-10-05 Denso Corp 半導体装置及びその製造方法
JP2003534665A (ja) * 2000-05-20 2003-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電界効果デバイス
JP2003534666A (ja) * 2000-05-20 2003-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置
JP2004006731A (ja) * 2002-03-27 2004-01-08 Toshiba Corp 電界効果型トランジスタおよびその応用装置
JP2003332570A (ja) * 2002-05-02 2003-11-21 Power Integrations Inc 高電圧トランジスタの製造方法
JP2004214611A (ja) * 2002-12-18 2004-07-29 Denso Corp 半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019510376A (ja) * 2016-03-22 2019-04-11 ゼネラル・エレクトリック・カンパニイ 高速スイッチング機能を有する超接合パワー半導体デバイス
JP7046823B2 (ja) 2016-03-22 2022-04-04 ゼネラル・エレクトリック・カンパニイ 高速スイッチング機能を有する超接合パワー半導体デバイス

Also Published As

Publication number Publication date
WO2008002879A3 (en) 2008-08-07
US20080001198A1 (en) 2008-01-03
WO2008002879A2 (en) 2008-01-03
CN101479851A (zh) 2009-07-08
TW200810121A (en) 2008-02-16
US7804150B2 (en) 2010-09-28
KR20090031548A (ko) 2009-03-26
DE112007001578T5 (de) 2009-05-14
US8097510B2 (en) 2012-01-17
KR101375887B1 (ko) 2014-03-18
CN101479851B (zh) 2011-01-12
US20110014760A1 (en) 2011-01-20

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