KR101375887B1 - 소스-드레인간 직통 전류 경로를 갖는 횡형 트랜치 게이트 전계효과 트랜지스터 - Google Patents

소스-드레인간 직통 전류 경로를 갖는 횡형 트랜치 게이트 전계효과 트랜지스터 Download PDF

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KR101375887B1
KR101375887B1 KR1020097000131A KR20097000131A KR101375887B1 KR 101375887 B1 KR101375887 B1 KR 101375887B1 KR 1020097000131 A KR1020097000131 A KR 1020097000131A KR 20097000131 A KR20097000131 A KR 20097000131A KR 101375887 B1 KR101375887 B1 KR 101375887B1
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silicon layers
region
trench gate
conductivity type
stacked silicon
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KR20090031548A (ko
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전창기
게리 돌니
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페어차일드 세미컨덕터 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020097000131A 2006-06-29 2007-06-25 소스-드레인간 직통 전류 경로를 갖는 횡형 트랜치 게이트 전계효과 트랜지스터 Active KR101375887B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/479,149 US7804150B2 (en) 2006-06-29 2006-06-29 Lateral trench gate FET with direct source-drain current path
US11/479,149 2006-06-29
PCT/US2007/072034 WO2008002879A2 (en) 2006-06-29 2007-06-25 Lateral trench gate fet with direct source-drain current path

Publications (2)

Publication Number Publication Date
KR20090031548A KR20090031548A (ko) 2009-03-26
KR101375887B1 true KR101375887B1 (ko) 2014-03-18

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Application Number Title Priority Date Filing Date
KR1020097000131A Active KR101375887B1 (ko) 2006-06-29 2007-06-25 소스-드레인간 직통 전류 경로를 갖는 횡형 트랜치 게이트 전계효과 트랜지스터

Country Status (7)

Country Link
US (2) US7804150B2 (enExample)
JP (1) JP2009543353A (enExample)
KR (1) KR101375887B1 (enExample)
CN (1) CN101479851B (enExample)
DE (1) DE112007001578T5 (enExample)
TW (1) TW200810121A (enExample)
WO (1) WO2008002879A2 (enExample)

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US7804150B2 (en) 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path
US8674434B2 (en) 2008-03-24 2014-03-18 Micron Technology, Inc. Impact ionization devices
KR101418398B1 (ko) 2008-07-04 2014-07-11 페어차일드코리아반도체 주식회사 필드 형성층을 구비하는 고전압 반도체소자 및 그 제조방법
US8482065B2 (en) * 2008-11-25 2013-07-09 Newport Fab, Llc MOS transistor with a reduced on-resistance and area product
US8004051B2 (en) * 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate
US7943445B2 (en) * 2009-02-19 2011-05-17 International Business Machines Corporation Asymmetric junction field effect transistor
CN102449501A (zh) 2009-04-10 2012-05-09 株式会社泛泰 用于使用模数或序列生成信号模式的方法及其装置
US8575695B2 (en) * 2009-11-30 2013-11-05 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode
JP5636254B2 (ja) 2009-12-15 2014-12-03 株式会社東芝 半導体装置
CN101916783B (zh) * 2010-08-13 2012-07-04 复旦大学 一种凹陷沟道的横向和纵向扩散型场效应晶体管及其制造方法
CN103035674B (zh) * 2012-10-22 2015-10-14 上海华虹宏力半导体制造有限公司 射频横向双扩散场效应晶体管及其制造方法
US9059324B2 (en) 2013-06-30 2015-06-16 Texas Instruments Incorporated Bi-directional ESD diode structure with ultra-low capacitance that consumes a small amount of silicon real estate
WO2015008550A1 (ja) * 2013-07-19 2015-01-22 日産自動車株式会社 半導体装置及びその製造方法
CN103762241B (zh) * 2014-01-02 2016-08-24 杭州电子科技大学 一种梳状栅纵向沟道soi ldmos单元
JP6340200B2 (ja) * 2014-01-27 2018-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10186573B2 (en) * 2015-09-14 2019-01-22 Maxpower Semiconductor, Inc. Lateral power MOSFET with non-horizontal RESURF structure
US10243039B2 (en) * 2016-03-22 2019-03-26 General Electric Company Super-junction semiconductor power devices with fast switching capability
US11329150B2 (en) * 2020-04-14 2022-05-10 Nxp Usa, Inc. Termination for trench field plate power MOSFET
US11837658B1 (en) * 2022-06-21 2023-12-05 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor
US20230411447A1 (en) * 2022-06-21 2023-12-21 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor

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JP2001274398A (ja) * 1999-10-19 2001-10-05 Denso Corp 半導体装置及びその製造方法
JP2002076339A (ja) * 2000-09-05 2002-03-15 Fuji Electric Co Ltd 超接合半導体素子
JP2004006731A (ja) * 2002-03-27 2004-01-08 Toshiba Corp 電界効果型トランジスタおよびその応用装置

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JP4590884B2 (ja) * 2003-06-13 2010-12-01 株式会社デンソー 半導体装置およびその製造方法
US7126166B2 (en) * 2004-03-11 2006-10-24 Semiconductor Components Industries, L.L.C. High voltage lateral FET structure with improved on resistance performance
JP2008546189A (ja) 2005-05-26 2008-12-18 フェアチャイルド・セミコンダクター・コーポレーション トレンチゲート電界効果トランジスタ及びその製造方法
US7804150B2 (en) 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path

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Publication number Priority date Publication date Assignee Title
JPH09266311A (ja) * 1996-01-22 1997-10-07 Fuji Electric Co Ltd 半導体装置及びその製造方法
JP2001274398A (ja) * 1999-10-19 2001-10-05 Denso Corp 半導体装置及びその製造方法
JP2002076339A (ja) * 2000-09-05 2002-03-15 Fuji Electric Co Ltd 超接合半導体素子
JP2004006731A (ja) * 2002-03-27 2004-01-08 Toshiba Corp 電界効果型トランジスタおよびその応用装置

Also Published As

Publication number Publication date
CN101479851A (zh) 2009-07-08
US7804150B2 (en) 2010-09-28
WO2008002879A2 (en) 2008-01-03
KR20090031548A (ko) 2009-03-26
CN101479851B (zh) 2011-01-12
JP2009543353A (ja) 2009-12-03
TW200810121A (en) 2008-02-16
WO2008002879A3 (en) 2008-08-07
DE112007001578T5 (de) 2009-05-14
US20110014760A1 (en) 2011-01-20
US8097510B2 (en) 2012-01-17
US20080001198A1 (en) 2008-01-03

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